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公开(公告)号：TW201343533A
公开(公告)日：2013-11-01
申请号：TW101140051
申请日：2012-10-30
Inventor： 張嘉誠 , CHANG, CHIA CHENG , 范成至 , FAN, CHEN CHIH , 周正三 , CHOU, BRUCE C. S.
CPC classification number: B81C1/00269 , B81B3/0018 , B81B3/0067 , B81B3/007 , B81B7/00 , B81B7/0006 , B81B7/0016 , B81B7/0029 , B81B7/0041 , B81B7/0051 , B81B7/0058 , B81B2201/0228 , B81B2201/0235 , B81B2201/025 , B81B2207/07 , B81B2207/096 , B81C1/00 , B81C1/00293 , B81C1/00325 , B81C2203/0118
Abstract: 一種微電機系統(MEMS)裝置可包括一於一第一基材上之微電機系統結構，微電機系統結構包括一中央靜態元件、一可移動元件、以及一外側靜態元件。一接合材質之部份位於中央靜態元件以及第一基材之間。一第二基材為於微電機系統結構上。一介電層之部份位於中央靜態元件以及第二基材之間。一支撐柱包括前述部份之接合材質、中央靜態元件、以及前述部份之介電材料。
Abstract in simplified Chinese: 一种微电机系统(MEMS)设备可包括一于一第一基材上之微电机系统结构，微电机系统结构包括一中央静态组件、一可移动组件、以及一外侧静态组件。一接合材质之部份位于中央静态组件以及第一基材之间。一第二基材为于微电机系统结构上。一介电层之部份位于中央静态组件以及第二基材之间。一支撑柱包括前述部份之接合材质、中央静态组件、以及前述部份之介电材料。
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132.发明授权公开(公告)号：US12000857B2
公开(公告)日：2024-06-04
申请号：US17677234
申请日：2022-02-22
Applicant: SEIKO EPSON CORPORATION
Inventor： Masayasu Sakuma
CPC classification number: G01P15/08 , B81B7/007 , G01P1/023 , G01P3/00 , G01P15/0802 , G01P15/18 , B81B2201/0228 , B81B2207/012
Abstract: A sensor module includes: a substrate including a first terminal and a second terminal; a first conductive bonding member having a first melting point and a first Young's modulus; a lead bonded to the first terminal by the first conductive bonding member; a second conductive bonding member having a second melting point lower than the first melting point and a second Young's modulus higher than the first Young's modulus; and an inertial sensor bonded to the second terminal by the second conductive bonding member.
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133.发明公开公开(公告)号：US20230406693A1
公开(公告)日：2023-12-21
申请号：US18242267
申请日：2023-09-05
Applicant: Nanusens SL
Inventor： Josep Montanyà Silvestre
CPC classification number: B81B3/0021 , B81C1/00142 , B81C1/00325 , B81B7/0006 , B81B2201/0228 , B81B2203/0163 , B81B2207/07
Abstract: A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.
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公开(公告)号：US11780725B2
公开(公告)日：2023-10-10
申请号：US17145061
申请日：2021-01-08
Applicant: Nanusens SL
Inventor： Josep Montanyà Silvestre
CPC classification number: B81B3/0021 , B81B7/0006 , B81C1/00142 , B81C1/00325 , B81B2201/0228 , B81B2203/0163 , B81B2207/07
Abstract: A MEMS device formed using the materials of the BEOL of a CMOS process where a post-processing of vHF and post backing was applied to form the MEMS device and where a total size of the MEMS device is between 50 um and 150 um. The MEMS device may be implemented as an inertial sensor among other applications.
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公开(公告)号：US11726107B2
公开(公告)日：2023-08-15
申请号：US17027948
申请日：2020-09-22
Applicant: NXP USA, Inc.
Inventor： Andrew C McNeil , Jerome Romain Enjalbert , Joel Cameron Beckwith , Jun Tang
IPC: G01P15/125 , B81B3/00
CPC classification number: G01P15/125 , B81B3/0027 , B81B2201/0228
Abstract: A sensor system includes a transducer for sensing a physical stimulus along at least two orthogonal axes and an excitation circuit. The transducer includes a movable mass configured to react to the physical stimulus and multiple differential electrode pairs of electrodes. Each of the electrode pairs is configured to detect displacement of the movable mass along one of the orthogonal axes. The excitation circuit is connectable to the electrodes in various electrode connection configurations, with different polarity schemes, that enable excitation and sampling of each of the orthogonal axes during every sensing period. For each sensing period, a composite output signal is produced that includes the combined information sensed along each of the orthogonal axes. The individual sense signals for each orthogonal axis may be extracted from the composite output signals.
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Patent Agency Ranking
公开(公告)号：US11661333B2
公开(公告)日：2023-05-30
申请号：US17070341
申请日：2020-10-14
Inventor： Wei-Jhih Mao , Shang-Ying Tsai , Kuei-Sung Chang , Chun-Wen Cheng
CPC classification number: B81B3/0021 , B81C1/00166 , B81C1/00825 , B81B2201/0228 , B81B2201/0292 , B81B2201/038 , B81B2203/04
Abstract: A semiconductor structure includes a substrate; a sensing device disposed over the substrate and including a plurality of protruding members protruded from the sensing device; a sensing structure disposed adjacent to the sensing device and including a plurality of sensing electrodes protruded from the sensing structure towards the sensing device; and an actuating structure disposed adjacent to the sensing device and configured to provide an electrostatic force on the sensing device based on a feedback from the sensing structure. Further, a method of manufacturing the semiconductor structure is also disclosed.
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公开(公告)号：US11650566B2
公开(公告)日：2023-05-16
申请号：US16734233
申请日：2020-01-03
Applicant: STMicroelectronics S.r.l.
Inventor： Luca Fontanella , Andrea Labombarda , Marco Bianco , Davide Ghezzi , Christian Raineri , Paolo Gatti
IPC: B81B7/00 , G05B19/406 , G05B23/02
CPC classification number: G05B19/406 , G05B23/0218 , B81B2201/02 , B81B2201/0228 , B81B2201/0264 , B81B2201/0278 , B81B2207/01 , G05B2219/34351
Abstract: A system for detecting and evaluating environmental quantities and events is formed by a detection and evaluation device and a mobile phone, connected through a wireless connection. The device is enclosed in a containment casing housing a support carrying a plurality of inertial sensors and environmental sensors. A processing unit is coupled to the inertial sensors and to the environmental sensors. A wireless connection unit, is coupled to the processing unit and a wired connection port, is coupled to the processing unit. A programming connector is coupled to the processing unit and is configured to couple to an external programming unit to receive programming instructions of the processing unit. A storage structure is coupled to the processing unit and a power-supply unit supplied power in the detection and evaluation device. The mobile phone stores an application, which enables a basicuse mode, an expert use mode, and an advanced use mode.
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138.发明申请公开(公告)号：US20190218093A1
公开(公告)日：2019-07-18
申请号：US16360274
申请日：2019-03-21
Applicant: Versana Micro Inc
Inventor： BISHNU PRASANNA GOGOI
CPC classification number: B81B7/02 , B81B2201/0207 , B81B2201/0214 , B81B2201/0228 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81B2207/012 , B81B2207/05 , B81B2207/09 , H01L27/14 , H01L27/16 , H01L27/22 , H01L41/1132 , H01L41/1138 , H01L2924/00 , H05K7/02
Abstract: A monolithically integrated multi-sensor (MIMS) is disclosed. A MIMs integrated circuit comprises a plurality of sensors. For example, the integrated circuit can comprise three or more sensors where each sensor measures a different parameter. The three or more sensors can share one or more layers to form each sensor structure. In one embodiment, the three or more sensors can comprise MEMs sensor structures. Examples of the sensors that can be formed on a MIMs integrated circuit are an inertial sensor, a pressure sensor, a tactile sensor, a humidity sensor, a temperature sensor, a microphone, a force sensor, a load sensor, a magnetic sensor, a flow sensor, a light sensor, an electric field sensor, an electrical impedance sensor, a galvanic skin response sensor, a chemical sensor, a gas sensor, a liquid sensor, a solids sensor, and a biological sensor.
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公开(公告)号：US20180327255A1
公开(公告)日：2018-11-15
申请号：US15683573
申请日：2017-08-22
Applicant: Honeywell International Inc.
Inventor： Daniel Endean , Barry A. Roberts
CPC classification number: B81B7/008 , B81B7/0045 , B81B7/02 , B81B2201/0228 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2207/012 , B81C1/0019 , B81C1/00293 , B81C2203/0109 , B81C2203/0145 , B81C2203/0172 , B81C2203/0792
Abstract: Systems and methods for multi-sensor integrated sensor devices are provided. In one embodiment, a sensor device comprises: a substrate having a first surface and an opposing second surface; a plurality of sensor cavities recessed into the substrate; a first sensor die sealed within a first sensor cavity of the plurality of sensor cavities at a first atmospheric pressure level; a second sensor die sealed within a second sensor cavity of the plurality of sensor cavities at a second atmospheric pressure level that is a different pressure than the first atmospheric pressure level; a first plurality of direct feedthrough electrical conductors embedded within the substrate coupled to the first sensor die; and a second plurality of direct feedthrough electrical conductors embedded within the substrate coupled to the second sensor die.
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公开(公告)号：US20180202808A1
公开(公告)日：2018-07-19
申请号：US15742810
申请日：2016-05-24
Applicant: Robert Bosch GmbH
Inventor： Benjamin Schmidt , Andreas Lassl , Burkhard Kuhlmann , Christian Hoeppner , Mirko Hattass , Thorsten Balslink
IPC: G01C19/5747 , G01C19/5726 , G01C19/5762 , G01C19/5712 , B81B3/00
CPC classification number: G01C19/5747 , B81B3/0054 , B81B2201/0228 , G01C19/5712 , G01C19/5726 , G01C19/5762
Abstract: A rotation rate sensor having a first structure movable with respect to the substrate, a second structure movable with respect to the substrate and with respect to the first structure, a first drive structure for deflecting the first structure with a motion component parallel to a first axis, and a second drive structure for deflecting the second structure with a motion component parallel to the first axis. The first and second structures are excitable to oscillate in counter-phase, with motion components parallel to the first axis, the first drive structure having a first spring mounted on the substrate to counteract a pivoting of the first structure around an axis parallel to a second axis extending perpendicularly to a principal extension plane, the second drive structure having a second spring mounted on the substrate to counteracts a pivoting of the second structure around a further axis parallel to the second axis.
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