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    웨이퍼를 제조하는 방법
    132.
    发明公开
    웨이퍼를 제조하는 방법 有权
    用于MEMS器件的BORON DOPED SHELL

    公开(公告)号：KR1020090010930A

    公开(公告)日：2009-01-30

    申请号：KR1020080071856

    申请日：2008-07-23

    Applicant: 허니웰 인터내셔널 인코포레이티드

    Inventor： 디트리제임스에프

    IPC: H01L21/20

    CPC classification number: B81C1/00595 ,  B81C1/00365 ,  B81C2201/0136 ,  B81C2201/0167 ,  B81C2203/031

    Abstract: A boron doped shell for a MEMS(micro-electromechanical system) device is provided to endure a big epitaxial layer without being bent due to lattice pressure caused by boron doping of large amount. A manufacturing method of a wafer for a micro-electromechanical system comprises: a step for providing a silicon substrate; a step for depositing a first doped silicon layer on the silicon substrate; a step for depositing an undoped silicon core layer on the doped silicon layer; and a step for depositing a sencon doped silicon layer on the undoped silicon substrate.

    Abstract translation: 提供了用于MEMS（微机电系统）器件的硼掺杂壳体，以承受由于大量硼掺杂引起的晶格压力而不会弯曲的大外延层。 一种用于微机电系统的晶片的制造方法包括：提供硅基板的步骤; 用于在所述硅衬底上沉积第一掺杂硅层的步骤; 用于在掺杂硅层上沉积未掺杂的硅芯层的步骤; 以及在未掺杂的硅衬底上沉积掺杂硅的硅层的步骤。

    Etching trenches in a substrate
    137.
    发明授权
    Etching trenches in a substrate 有权
    蚀刻衬底中的沟槽

    公开(公告)号：US08993451B2

    公开(公告)日：2015-03-31

    申请号：US13088106

    申请日：2011-04-15

    Applicant: Srivatsa G. Kundalgurki ,  James F. McHugh

    Inventor： Srivatsa G. Kundalgurki ,  James F. McHugh

    IPC: H01L21/302 ,  H01L21/02 ,  H01L21/306 ,  H01L21/308 ,  H01L21/265 ,  B81C1/00

    CPC classification number: H01L21/02057 ,  B81C1/00063 ,  B81C1/00626 ,  B81C2201/0136 ,  H01L21/26506 ,  H01L21/30608 ,  H01L21/3083

    Abstract: Etch stabilizing ions (37) are introduced, e.g., by ion implantation (34), into a portion (36) of a substrate (20) underlying an etch window (24) in a masking layer (22) covering the substrate (20), where a trench (26) is desired to be formed. When the portion (36) of the substrate (20) containing the etch stabilizing ions (37) is etched to form the trench (26), the etch stabilizing ions (37) are progressively released at the etch interface (28′) as etching proceeds, substantially preventing gas micro-bubbles or other reaction products at the etch interface (28′) from disrupting etching. Using this method (700), products containing trenches (26) are much more easily formed and such trenches (26) have much smoother interior surface (28).

    Abstract translation: 蚀刻稳定离子（37）例如通过离子注入（34）引入覆盖衬底（20）的掩模层（22）中的蚀刻窗（24）下面的衬底（20）的部分（36） ，其中希望形成沟槽（26）。 当蚀刻包含蚀刻稳定离子（37）的衬底（20）的部分（36）以形成沟槽（26）时，蚀刻稳定离子（37）在蚀刻界面（28'）处逐渐释放，如蚀刻 进行，基本上防止蚀刻界面（28'）处的气体微气泡或其他反应产物破坏蚀刻。 使用该方法（700），包含沟槽（26）的产品更容易形成，并且这种沟槽（26）具有更平滑的内表面（28）。

    Single crystal silicon membrane with a suspension layer, method for fabricating the same, and a micro-heater
    138.
    发明授权
    Single crystal silicon membrane with a suspension layer, method for fabricating the same, and a micro-heater 有权
    具有悬浮层的单晶硅膜，其制造方法和微加热器

    公开(公告)号：US08895448B2

    公开(公告)日：2014-11-25

    申请号：US13482020

    申请日：2012-05-29

    Applicant: Chung-Nan Chen

    Inventor： Chung-Nan Chen

    IPC: H01L21/302 ,  H01L21/461 ,  H05B3/14 ,  B81C1/00

    CPC classification number: B81C1/00158 ,  B81C1/00595 ,  B81C2201/0136 ,  H05B3/141

    Abstract: To form a single crystal silicon membrane with a suspension layer, a single crystal silicon substrate with crystal orientation is prepared. A doped layer is formed on the top surface of the single crystal silicon substrate. Multiple main etching windows are formed through the doped layer. A cavity is formed through the single crystal silicon substrate by anisotropic etching. The doped layer is above the cavity to form a suspension layer. If two electrode layers are formed on the two ends of the suspension layer, a micro-heater is constructed. The main etching windows extend in parallel to a crystal plane {111}. By both the single crystal structure and different impurity concentrations of the single crystal silicon substrate, the single crystal silicon substrate has a higher etch selectivity. When a large-area cavity is formed, the thickness of the suspension layer is still controllable.

    Abstract translation: 为了形成具有悬浮层的单晶硅膜，制备晶体取向<111>的单晶硅衬底。 在单晶硅衬底的顶表面上形成掺杂层。 通过掺杂层形成多个主蚀刻窗口。 通过各向异性蚀刻通过单晶硅衬底形成空穴。 掺杂层在空腔之上以形成悬浮层。 如果在悬浮层的两端形成两个电极层，则构成微加热器。 主蚀刻窗平行于晶面{111}延伸。 通过单晶硅衬底的单晶结构和不同的杂质浓度，单晶硅衬底具有较高的蚀刻选择性。 当形成大面积腔时，悬浮层的厚度仍然可控。

    Method for creating a micromechanical membrane structure and MEMS component
    139.
    发明授权
    Method for creating a micromechanical membrane structure and MEMS component 有权
    用于产生微机械膜结构和MEMS部件的方法

    公开(公告)号：US08691611B2

    公开(公告)日：2014-04-08

    申请号：US13290905

    申请日：2011-11-07

    Applicant: Arnim Hoechst ,  Jochen Reinmuth ,  Brett Diamond

    Inventor： Arnim Hoechst ,  Jochen Reinmuth ,  Brett Diamond

    IPC: H01L21/3065

    CPC classification number: B81C1/00595 ,  B81B2201/0235 ,  B81B2203/0127 ,  B81B2203/0181 ,  B81B2203/053 ,  B81C2201/0112 ,  B81C2201/0133 ,  B81C2201/0136

    Abstract: In a method for manufacturing a micromechanical membrane structure, a doped area is created in the front side of a silicon substrate, the depth of which doped area corresponds to the intended membrane thickness, and the lateral extent of which doped area covers at least the intended membrane surface area. In addition, in a DRIE (deep reactive ion etching) process applied to the back side of the silicon substrate, a cavity is created beneath the doped area, which DRIE process is aborted before the cavity reaches the doped area. The cavity is then deepened in a KOH etching process in which the doped substrate area functions as an etch stop, so that the doped substrate area remains as a basic membrane over the cavity.

    Abstract translation: 在制造微机械膜结构的方法中，在硅衬底的前侧产生掺杂区域，其掺杂区域的深度对应于所需的膜厚度，并且其掺杂区域的横向范围至少覆盖预期的 膜表面积。 另外，在施加到硅衬底的背侧的DRIE（深反应离子蚀刻）工艺中，在掺杂区域之下产生空腔，在空腔到达掺杂区域之前DRIE工艺被中止。 然后在KOH蚀刻工艺中加深空腔，其中掺杂衬底区域用作蚀刻停止层，使得掺杂衬底区域保持为空腔上的基本膜。

    Method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate
    140.
    发明授权
    Method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate 有权
    用于制造从衬底的后部进入的微机械膜结构的方法

    公开(公告)号：US08519494B2

    公开(公告)日：2013-08-27

    申请号：US12737037

    申请日：2009-04-21

    Applicant: Torsten Kramer ,  Marcus Ahles ,  Armin Grundmann ,  Kathrin Knese ,  Hubert Benzel ,  Gregor Schuermann ,  Simon Armbruster

    Inventor： Torsten Kramer ,  Marcus Ahles ,  Armin Grundmann ,  Kathrin Knese ,  Hubert Benzel ,  Gregor Schuermann ,  Simon Armbruster

    IPC: G01P15/08

    CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C2201/0115 ,  B81C2201/0136 ,  G01L9/0042

    Abstract: A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped lattice structure; growing a first monocrystalline silicon epitaxial layer on the n-doped lattice structure; at least one opening in the n-doped lattice structure being dimensioned in such a way that it is not closed by the growing first epitaxial layer but instead forms an access opening to the cavity; an oxide layer being created on the cavity wall; a rear access to the cavity being created, the oxide layer on the cavity wall acting as an etch stop layer; and the oxide layer being removed in the area of the cavity.

    Abstract translation: 用于制造从衬底的后部进入的微机械膜结构的方法包括：n掺杂p掺杂硅衬底表面的至少一个连续的格子型区域; 在n掺杂的晶格结构下面蚀刻衬底区域; 在该n型掺杂晶格结构下面的该衬底区域中产生空腔; 在n掺杂晶格结构上生长第一单晶硅外延层; n掺杂晶格结构中的至少一个开口的尺寸设计成使得其不被生长的第一外延层闭合​​，而是形成到腔的通路口; 在空腔壁上形成氧化物层; 产生到空腔的后部通路，空腔壁上的氧化层用作蚀刻停止层; 并且在空腔的区域中去除氧化物层。

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