公开(公告)号：WO2008045972A2

公开(公告)日：2008-04-17

申请号：PCT/US2007/081005

申请日：2007-10-10

Applicant: ASM AMERICA, INC.

Inventor： FONDURULIA, Kyle ,  SHERO, Eric ,  VERGHESE, Mohith, E. ,  WHITE, Carl, L.

IPC: C23C16/448

CPC classification number: C23C16/4481 ,  C23C16/4401 ,  C23C16/4402

Abstract: A precursor source vessel (100) comprises a vessel body (104), a passage (145) within the vessel body (104), and a valve (108, 110, 210) attached to a surface of the body (104). An internal chamber (111) is adapted to contain a chemical reactant, and the passage (145) extends from outside the body (104) to the chamber (111). The valve (108, 110, 210) regulates flow through the passage (145). The vessel (100) has inlet and outlet valves (108, 110), and optionally a vent valve (210) for venting internal gas. An external gas panel (97) can include at least one valve (182) fluidly interposed between the outlet valve (110) and a substrate reaction chamber (162). Gas panel valves (182) can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel (100). Filters (130) in a vessel Hd (106) or wall filter gas flow through the vessel's valves (108, 110, 210). A quick-connection assembly (102) allows fast and easy connection of the vessel (100) to a gas panel (97).

Abstract translation: 前体源容器（100）包括容器主体（104），容器主体（104）内的通道（145）和连接到主体（104）表面的阀（108,110,210）。 内室（111）适于容纳化学反应物，并且通道（145）从主体（104）的外部延伸到腔室（111）。 阀（108,110,210）调节通过通道（145）的流动。 容器（100）具有入口和出口阀（108,110），并且可选地具有用于排放内部气体的排气阀（210）。 外部气体面板（97）可以包括流体插入在出口阀（110）和基板反应室（162）之间的至少一个阀（182）。 燃气面板阀（182）可以分别沿着与容器（100）的平坦表面大致平行且不超过约10.0cm的平面定位。 容器Hd（106）中的过滤器（130）或壁过滤气体流过容器的阀门（108,110,210）。 快速连接组件（102）允许容器（100）快速且容易地连接到气体面板（97）。

公开(公告)号：WO2008042590A2

公开(公告)日：2008-04-10

申请号：PCT/US2007/078804

申请日：2007-09-18

Applicant: ASM AMERICA, INC.

Inventor： BRABANT, Paul ,  JACOBSON, Paul

IPC: C30B25/10 ,  C23C16/46 ,  C23C16/54

CPC classification number: C30B25/10 ,  C30B23/06 ,  C30B35/00 ,  H01L21/67103 ,  H01L21/67115

Abstract: A reactor (10) for processing a plurality of workpieces (18) including a support (16) for holding the plurality of workpieces, a first processing zone (12), one or more radiant heating elements (120) adapted to heat a plurality of workpieces positioned in the first processing zone, a second processing zone (14), one or more resistive heating elements (140) adapted to heat a plurality of workpieces positioned in the second processing zone, and an apparatus (20) for moving the support between the first processing zone and the second processing zone.

Abstract translation: 一种用于处理多个工件（18）的反应器（10），所述工件包括用于保持所述多个工件的支撑件（16），第一处理区域（12），一个或多个辐射加热元件 适于加热定位在第一处理区域中的多个工件，第二处理区域（14），适于加热定位在第二处理区域中的多个工件的一个或多个电阻加热元件（140），以及设备 （20），用于在第一处理区域和第二处理区域之间移动支撑件。

公开(公告)号：WO2008014079A1

公开(公告)日：2008-01-31

申请号：PCT/US2007/072252

申请日：2007-06-27

Applicant: ASM AMERICA, INC. ,  S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES, S.A.

Inventor： CODY, Nyles, W. ,  FIGUET, Christophe ,  KENNARD, Mark

IPC: H01L21/20

CPC classification number: H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532

Abstract: A semiconductor workpiece including a substrate 10, a relaxed buffer layer 14, 18 including a graded portion formed on the substrate, and at least one strained transitional layer 16 within the graded portion of the relaxed buffer layer 14, 18 and method of manufacturing the same. The at least one strained transitional layer 16 reduces an amount of workpiece bow due to differential coefficient of thermal expansion (CTE) contraction of the relaxed buffer layer 14, 18 relative to CTE contraction of the substrate 10.

Abstract translation: 包括衬底10的半导体工件，包括形成在衬底上的渐变部分的松弛缓冲层14,18以及松弛缓冲层14,18的渐变部分内的至少一个应变过渡层16及其制造方法 。 至少一个应变过渡层16由于缓冲缓冲层14,18相对于衬底10的CTE收缩的差异热膨胀系数（CTE）收缩而减少了工件弓形的数量。

公开(公告)号：WO2007140375A2

公开(公告)日：2007-12-06

申请号：PCT/US2007/069894

申请日：2007-05-29

Applicant: ASM AMERICA, INC. ,  TOMASINI, Pierre ,  WEN, Jianqing ,  BERTRAM, Ronald ,  ARENA, Chantal ,  BAUER, Matthias ,  CODY, Nyles

Inventor： TOMASINI, Pierre ,  WEN, Jianqing ,  BERTRAM, Ronald ,  ARENA, Chantal ,  BAUER, Matthias ,  CODY, Nyles

IPC: H01L21/205

CPC classification number: H01L21/28518 ,  C23C16/04 ,  C23C16/24 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639

Abstract: Chloropolysilanes are utilized in methods and systems for selectively depositing thin films useful for the fabrication of various devices such as microelectronic and/or microelectromechanical systems (MEMS).

Abstract translation: 氯多硅烷用于选择性沉积薄膜的方法和系统中，薄膜可用于制造诸如微电子和/或微机电系统（MEMS）的各种装置。

公开(公告)号：WO2007075369A1

公开(公告)日：2007-07-05

申请号：PCT/US2006/047805

申请日：2006-12-14

Applicant: ASM INTERNATIONAL N.V. ,  ASM AMERICA, INC. ,  ZAGWIJN, Peter, Marc ,  OOSTERLAKEN, Gerardus Maria, Theodorus ,  VAN AERDE, Steven, R.A. ,  FISCHER, Pamela, Rene

Inventor： ZAGWIJN, Peter, Marc ,  OOSTERLAKEN, Gerardus Maria, Theodorus ,  VAN AERDE, Steven, R.A. ,  FISCHER, Pamela, Rene

IPC: H01L21/205

CPC classification number: C23C16/24 ,  C23C16/45523 ,  C23C16/45578 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

Abstract: A doped silicon layer is formed in a batch process chamber 529 at low temperatures. The silicon precursor 580 for the silicon layer formation is a polysilane, such as trisilane, and the dopant precursor 582 is an n-type dopant, such as phosphine. The silicon precursor 580 can be flowed into the process chamber 529 with the flow of the dopant precursor 582 or separately from the flow of the dopant precursor 582. Surprisingly, deposition rate is independent of dopant precursor flow, while dopant incorporation linearly increases with the dopant precursor flow.

Abstract translation: 在低温下在间歇处理室529中形成掺杂硅层。 用于硅层形成的硅前体580是聚硅烷，例如丙硅烷，掺杂剂前体582是n型掺杂剂，例如磷化氢。 硅前驱体580可以随着掺杂剂前体582的流动或者与掺杂剂前体582的流动而流入处理室529.令人惊奇的是，沉积速率与掺杂剂前体流动无关，而掺杂剂掺入与掺杂剂 前体流。

公开(公告)号：WO2005081283A2

公开(公告)日：2005-09-01

申请号：PCT/US2005/004656

申请日：2005-02-11

Applicant: ASM AMERICA, INC.

Inventor： STOUTYESDIJK, Jeroen ,  AGGARWAL, Ravinder ,  HALPIN, Mike ,  KEETON, Tony ,  GOODMAN, Matt ,  HAWKINS, Mark ,  HAEN, Lee ,  FERRO, Armand ,  BRABANT, Paul, D. ,  VYNE, Bobby ,  BARTLETT, Gregory, M. ,  ITALIANO, Joseph, P. ,  HARO, Bob

IPC: H01J37/00

CPC classification number: H01L21/68735 ,  H01J37/32871 ,  H01L21/67028

Abstract: A substrate support system (140, 200, 300) comprises a relatively thin circular substrate holder (100) having a plurality of passages (116, 118, 120, 240, 340) extending between top and bottom surfaces thereof. The substrate holder (100) includes a single substrate support ledge or a plurality of substrate support spacer vanes (124) configured to support a peripheral portion of the substrate backside (154) so that a thin gap (152) is formed between the substrate (16) and the substrate holder (100). The vanes (124) can be angled to resist backside deposition of reactant gases as the substrate holder (100) is rotated. A hollow support member (22, 204, 304) provides support to an underside (106) of the substrate holder (100). The hollow support member (22, 204, 304) is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages (116, 240) of the substrate holder (100). The upwardly conveyed gas flows into the gap (152) between the substrate (16) and the substrate holder (100). Depending upon the embodiment of the invention, the gas in the gap (152) can then flow either outward and upward around the substrate edge (17), or downward through passages (118, 120, 340) of the substrate holder (100), if any, that do not lead back into the hollow support member (22, 204, 304). The gas that flows outward and upward around the substrate edge (17) inhibits backside deposition of reactant gases above the substrate (16). The gas that flows downward through the passages (118, 120, 340) that do not lead back to the support member (22, 204, 304) advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side (155). In one embodiment, the support member comprises a hollow multi-armed support spider (22) that conveys gas into selected ones of the passages (116). In another embodiment, the support member comprises a bowl- or cup-shaped structure (204) that conveys gas upward into all of the passages (240). In yet another embodiment, the support member comprises a bowl- or cup-shaped structure (304) that conveys gas upward into all but one or more of the passages (240).

Abstract translation: 衬底支撑系统（140,200,300）包括相对薄的圆形衬底保持器（100），其具有在其顶表面和底表面之间延伸的多个通道（116,118,120,240,340）。 衬底保持器（100）包括单个衬底支撑凸缘或多个衬底支撑间隔器叶片（124），其被配置为支撑衬底背侧（154）的周边部分，使得在衬底（152）之间形成薄间隙（152） 16）和基板支架（100）。 当衬底保持器（100）旋转时，叶片（124）可以成角度以抵抗反应气体的背面沉积。 中空的支撑构件（22,204,304）为衬底保持器（100）的下侧（106）提供支撑。 中空支撑构件（22,204,304）构造成将气体（例如，惰性气体或清洁气体）向上输送到衬底保持器（100）的一个或多个通道（116,240）中。 向上输送的气体流入衬底（16）和衬底保持器（100）之间的间隙（152）。 根据本发明的实施例，间隙（152）中的气体然后可以围绕衬底边缘（17）向外和向上流动，或者通过衬底保持器（100）的通道（118,120,340）向下流动， （如果有的话）不会引回到中空支撑构件（22,204,304）中。 沿着衬底边缘（17）向外和向上流动的气体阻止在衬底（16）上方的反应气体的背面沉积。 向下流过不通过支撑构件（22,204,304）的通道（118,120,340）的气体有利地通过从扩散的掺杂​​剂原子远离衬底前侧（155）来扫除自发掺杂， 。 在一个实施例中，支撑构件包括将气体输送到选定通道（116）中的中空多臂支撑支架（22）。 在另一个实施例中，支撑构件包括将气体向上输送到所有通道（240）中的碗状或杯状结构（204）。 在另一个实施例中，支撑构件包括碗状或杯状结构（304），其将气体向上输送到除一个或多个通道（240）内的所有通道中。

公开(公告)号：WO2005042160A2

公开(公告)日：2005-05-12

申请号：PCT/US2004/036301

申请日：2004-10-29

Applicant: ASM AMERICA, INC. ,  SHERO, Eric, J. ,  MOHITH, Verghese, E.

Inventor： SHERO, Eric, J. ,  MOHITH, Verghese, E.

IPC: B01L

CPC classification number: C23C16/4412 ,  C23C16/45548 ,  C23C16/45591 ,  H01L21/67017

Abstract: A reactor defines a reaction chamber for processing a substrate. The reactor comprises a first inlet for providing a first reactant and to the reaction chamber and a second inlet for a second reactant to the reaction chamber. A first exhaust outlet removes gases from the reaction chamber. A second exhaust outlet removes gases from the reaction chamber. A flow control system is configured to alternately constrict flow through the first and second exhaust outlets. The reactor chamber is configured to for a diffusion barrier within the reaction chamber.

Abstract translation: 反应器限定用于处理基板的反应室。 反应器包括用于提供第一反应物和反应室的第一入口和用于反应室的第二反应物的第二入口。 第一排气口从反应室中除去气体。 第二排气口从反应室中除去气体。 流量控制系统被配置为交替地收缩通过第一和第二排气出口的流动。 反应室被配置成在反应室内用于扩散阻挡层。

公开(公告)号：WO2005010946A2

公开(公告)日：2005-02-03

申请号：PCT/US2004/023505

申请日：2004-07-21

Applicant: ASM AMERICA, INC. ,  BAUER, Matthias

Inventor： BAUER, Matthias

IPC: H01L

CPC classification number: H01L21/02381 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/26506 ,  H01L21/84

Abstract: Methods are provided for producing SiGe-on-insulator structures and for forming strain-relaxed SiGe layers on silicon while minimizing defects. Amorphous SiGe layers are deposited by CVD from trisilane and GeH 4 . The amorphous SiGe layers are recrystallized over silicon by melt or solid phase epitaxy (SPE) processes. The melt processes preferably also cause diffusion of germanium to dilute the overall germanium content and essentially consume the silicon overlying the insulator. The SPE process can be conducted with or without diffusion of germanium into the underlying silicon, and so is applicable to SOI as well as conventional semiconductor substrates.

Abstract translation: 提供了用于制造绝缘体上硅结构和在硅上形成应变松弛SiGe层同时最小化缺陷的方法。 非晶SiGe层通过CVD从丙硅烷和GeH 4沉积。 非晶SiGe层通过熔体或固相外延（SPE）工艺在硅上重结晶。 熔体工艺优选还引起锗的扩散以稀释总体锗含量，并且基本上消耗覆盖绝缘体的硅。 SPE工艺可以进行或不进行锗扩散到下面的硅中，因此也适用于SOI以及常规的半导体衬底。

公开(公告)号：WO2004081986A2

公开(公告)日：2004-09-23

申请号：PCT/US2004/007385

申请日：2004-03-11

Applicant: ASM AMERICA INC. ,  TOMASINI, Pierre ,  CODY, Nyles ,  ARENA, Chantal

Inventor： TOMASINI, Pierre ,  CODY, Nyles ,  ARENA, Chantal

IPC: H01L

CPC classification number: H01L21/02532 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0262 ,  H01L21/02639

Abstract: A method for blanket depositing a SiGe film (30) comprises intermixing a silicon source, a germanium source and an etchant to form a gaseous precursor mixture. The method further comprises flowing the gaseous precursor mixture over a substrate (10) under chemical vapor deposition conditions to deposit a blanket layer of epitaxial SiGe (30) onto the substrate (10), whether patterned or un-patterned.

Abstract translation: 用于毯式沉积SiGe膜（30）的方法包括混合硅源，锗源和蚀刻剂以形成气态前体混合物。 该方法还包括在化学气相沉积条件下使气态前体混合物在衬底（10）上流动，以在衬底（10）上沉积外延SiGe（30）的覆盖层，无论是图案化的还是未图案化的。

公开(公告)号：WO2004017365A2

公开(公告)日：2004-02-26

申请号：PCT/US2003/022976

申请日：2003-07-24

Applicant: ASM AMERICA, INC.

Inventor： TODD, Michael, A.

IPC: H01L

CPC classification number: C30B29/06 ,  C23C16/24 ,  C23C16/325 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262

Abstract: Chemical vapor deposition methods are used to deposit amorphous silicon-containing films over various substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Preferably, the deposited amorphous silicon-containing film is annealed to produce crystalline regions over all or part of an underlying substrate.

Abstract translation: 使用化学气相沉积方法在各种衬底上沉积非晶态含硅膜。 这种方法在半导体制造中可用于提供各种优点，包括在异质表面上的均匀沉积，高沉积速率和更高的制造生产率。 优选地，沉积的非晶态含硅膜被退火以在下面的基底的全部或部分上产生结晶区域。