公开(公告)号：EP4286906A1

公开(公告)日：2023-12-06

申请号：EP22201882.2

申请日：2022-10-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Rosenfeld, Adam ,  Bian, Yusheng ,  Afzal, Francis ,  Mulfinger, Bob

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/124 ,  G02B6/132 ,  G02B6/136

Abstract: A structure comprising: a substrate; a waveguide core; and a grating disposed in a vertical direction between the waveguide core and the substrate, the grating including a first plurality of layers and a second plurality of layers that alternate in the vertical direction with the first plurality of layers, the first plurality of layers comprising a first material having a first refractive index, and the second plurality of layers comprising a second material having a second refractive index that is greater than the first refractive index.

公开(公告)号：EP4280286A1

公开(公告)日：2023-11-22

申请号：EP22200484.8

申请日：2022-10-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： HOLT, Judson R. ,  PANDEY, Shesh Mani ,  JAIN, Vibhor

IPC: H01L29/66 ,  H01L29/737 ,  H01L29/08 ,  H01L29/06

Abstract: A structure comprising, a collector, a subcollector, an intrinsic base over the subcollector, an extrinsic base adjacent to the intrinsic base, an emitter over the intrinsic base, and an isolation structure between the extrinsic base and the emitter and which overlaps the subcollector and/or a hardmask between the collector and the extrinsic base.

公开(公告)号：EP4227985A3

公开(公告)日：2023-11-15

申请号：EP22199712.5

申请日：2022-10-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Raghunathan, Uppili ,  Jain, Vibhor ,  Ventrone, Sebastian ,  Kantarovsky, Johnatan ,  Ngu, Yves

IPC: H01L21/762 ,  H01L21/763

Abstract: A structure comprising: a semiconductor substrate; a first isolation region in the semiconductor substrate, the first isolation region surrounding a portion of the semiconductor substrate; a device in the portion of the semiconductor substrate; and a second isolation region in the semiconductor substrate, the second isolation region surrounding the first isolation region and the portion of the semiconductor substrate.

公开(公告)号：EP4261576A1

公开(公告)日：2023-10-18

申请号：EP22206834.8

申请日：2022-11-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Bian, Yusheng

IPC: G02B6/12 ,  G02B6/30 ,  G02B6/122

Abstract: An edge coupler (100), comprising a substrate (104), a sealed cavity (116) in the substrate, a waveguide core (130) over the substrate; and a back-end-of-line stack (182) over the waveguide core, the back-end-of-line stack comprises a side edge (184), an interlayer dielectric layer (148), and a first assisting waveguide (152, 154, 156, 158, 168, 170, 172) on the interlayer dielectric layer adjacent to the side edge, and the first assisting waveguide and the waveguide core have an overlapping arrangement with the sealed cavity in the substrate.

公开(公告)号：EP4254476A3

公开(公告)日：2023-10-11

申请号：EP22200004.4

申请日：2022-10-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： RAGHUNATHAN, Uppili S. ,  JAIN, Vibhor ,  ADUSUMILLI, Siva P. ,  NGU, Yves T. ,  KANTAROVSKY, Johnatan A. ,  VENTRONE, Sebastian T.

IPC: H01L21/764 ,  H01L21/762 ,  H01L29/06 ,  H01L29/16 ,  H01L29/73

Abstract: A structure comprising a semiconductor substrate comprising a trap-rich region; at least one airgap structure within the semiconductor substrate; at least one deep trench isolation structure laterally surrounding the at least one airgap structure and extending into the semiconductor substrate; and a device over the at least one airgap structure.

公开(公告)号：EP4254505A1

公开(公告)日：2023-10-04

申请号：EP22198020.4

申请日：2022-09-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： ABOU-KHALIL, Michel ,  SHANK, Steven ,  VALLETT, Aaron ,  Mc TAGGART, Sarah ,  KRISHNASAMY, Rajendran

IPC: H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L21/336

Abstract: A structure comprising: a semiconductor substrate including a first surface, a first recess in the first surface, and a second surface inside the first recess; a shallow trench isolation region extending from the first surface into the semiconductor substrate, the shallow trench isolation region positioned to surround an active device region including the first recess; and a field-effect transistor including a gate electrode positioned on a portion of the second surface.

公开(公告)号：EP4235242A1

公开(公告)日：2023-08-30

申请号：EP22199632.5

申请日：2022-10-04

Applicant: GlobalFoundries U.S. Inc.

Inventor： Bian, Yusheng ,  Polomoff, Nicholas ,  Donegan, Keith ,  Liu, Qizhi ,  Shank, Steven M.

IPC: G02B6/42 ,  G02B6/122

Abstract: Structures including an edge coupler, and methods of fabricating a structure that includes an edge coupler. The structure (10) includes an edge coupler having a waveguide core (12) with an end surface (14) and a longitudinal axis (18). The end surface (14) defines a plane tilted in a first direction at a first acute angle relative to the longitudinal axis (18) and tilted in a second direction at a second acute angle relative to the longitudinal axis (18). The second direction differs from the first direction.

公开(公告)号：EP4220257A1

公开(公告)日：2023-08-02

申请号：EP22200137.2

申请日：2022-10-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Pandey, Shesh Mani ,  Bian, Yusheng ,  Holt, Judson

IPC: G02B6/122 ,  G02B6/12

Abstract: Waveguide structures and methods of fabricating a waveguide structure. The structure includes a first waveguide core, a second waveguide core, and a third waveguide core adjacent to the first waveguide core and the second waveguide core. The third waveguide core is laterally separated from the first waveguide core by a first slot, and the third waveguide core is laterally separated from the second waveguide core by a second slot. The first waveguide core and the second waveguide core comprise a first material, and the third waveguide core comprises a second material that is different in composition from the first material.

公开(公告)号：EP4220254A1

公开(公告)日：2023-08-02

申请号：EP22197933.9

申请日：2022-09-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Bian, Yusheng ,  Shank, Steven M. ,  Hirokawa, Takako

IPC: G02B6/12

Abstract: Structures including an edge coupler (11) and methods of fabricating a structure including an edge coupler. The structure includes an edge coupler (11) having a longitudinal axis, a first ring resonator (14), and a second ring resonator (15). The first ring resonator (14) has a first center point that is spaced from the longitudinal axis of the edge coupler (11) by a first perpendicular distance. The second ring resonator (15) has a second center point that is spaced from the longitudinal axis of the edge coupler (11) by a second perpendicular distance.

公开(公告)号：EP4210110A1

公开(公告)日：2023-07-12

申请号：EP22206418.0

申请日：2022-11-09

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yu, Hong ,  Derrickson, Alexander M. ,  Holt, Judson R.

IPC: H01L29/417 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/06 ,  H01L29/66 ,  H01L29/73 ,  H01L21/8238 ,  H01L21/8222 ,  H01L21/8249

Abstract: A bipolar transistor structure comprising a semiconductor fin on a substrate, the semiconductor fin having a first doping type, a length in a first direction, and a width in a second direction perpendicular to the first direction; a first emitter/collector material adjacent a first sidewall of the semiconductor fin along the width of the semiconductor fin, the first emitter/collector material having a second doping type opposite the first doping type; and
a second emitter/collector material adjacent a second sidewall of the semiconductor fin along the width of the semiconductor fin, the second emitter/collector material having the second doping type, wherein a width of the first emitter/collector material is different from a width of the second emitter/collector material.