公开(公告)号：US06590321B1

公开(公告)日：2003-07-08

申请号：US09404656

申请日：1999-09-24

Applicant: Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Nobuyoshi Koshida

Inventor： Takuya Komoda ,  Tsutomu Ichihara ,  Koichi Aizawa ,  Nobuyoshi Koshida

IPC: H01J1312

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/025 ,  H01J2201/3125 ,  Y10S977/939

Abstract: In a field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids ox the mesh and has a heat conduction higher than that of the drift region 161.

Abstract translation: 在场发射电子源中，在其主表面上的n型硅衬底上形成强电场漂移部分106，并且在强电场漂移部分106上形成由金薄膜制成的表面电极107。 并且欧姆电极2形成在n型硅衬底101的背面上。在该场发射电子源110中，当表面电极107设置在真空中并且向表面电极107施加直流电压时 相对于n型硅衬底101（欧姆电极2）具有正极性，从n型硅衬底101注入的电子在强电场漂移部106中漂移，并通过表面电极107发射。 强电场漂移部分106包括漂移区域161，该漂移区域161在与n型硅衬底1的厚度方向成直角的网状结构中具有横截面，该电极是电c 以及散热区域162，其被填充在空隙中，并且具有比漂移区域161高的导热性。

公开(公告)号：US20030102793A1

公开(公告)日：2003-06-05

申请号：US10258601

申请日：2002-11-05

Inventor： Takuya Komoda ,  Koichi Aizawa ,  Yoshiaki Honda ,  Tsutomu Ichihara ,  Yoshifumi Watabe ,  Takashi Hatai ,  Toru Baba ,  Yoshiyuki Takegawa

IPC: H01J019/06 ,  H01J001/05

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/3125

Abstract: In a field emission-type electron source (10), a strong field drift layer (6) and a surface electrode (7) consisting of a gold thin film are provided on an n-type silicon substrate (1). An ohmic electrode (2) is provided on the back surface of the n-type silicon substrate (1). A direct current voltage is applied so that the surface electrode (7) becomes positive in potential relevant to the ohmic electrode (2). In this manner, electrons injected from the ohmic electrode (2) into the strong field drift layer (6) via the n-type silicon substrate (6) drift in the strong field drift layer (6), and is emitted to the outside via the surface electrode (7). The strong field drift layer (6) has: a number of semiconductor nanocrystals (63) of nano-meter order formed partly of a semiconductor layer configuring the strong field drift layer (6); and a number of insulating films (64) each of which is formed on the surface of each of the semiconductor nanocrystals (63) and each having film thickness to an extent such that an electron tunneling phenomenon occurs.

Abstract translation: 在场致发射型电子源（10）中，在n型硅衬底（1）上设置强电场漂移层（6）和由金薄膜构成的表面电极（7）。 在n型硅衬底（1）的背面设有欧姆电极（2）。 施加直流电压，使得表面电极（7）在与欧姆电极（2）相关的电位变为正。 以这种方式，经由n型硅衬底（6）从欧姆电极（2）注入强场漂移层（6）的电子在强场漂移层（6）中漂移，并经由 表面电极（7）。 强场漂移层（6）具有：部分地由构成强场漂移层（6）的半导体层形成的多个纳米级的半导体纳米晶体（63）; 以及多个绝缘膜（64），其各自形成在每个半导体纳米晶体（63）的表面上，并且各自具有使得发生电子隧道现象的程度的膜厚度。

公开(公告)号：US20030089900A1

公开(公告)日：2003-05-15

申请号：US10263055

申请日：2002-10-01

Inventor： Zhizhang Chen ,  Sriram Ramamoorthi ,  Hung Liao ,  Paul Benning ,  Alexander Govyadinov

IPC: H01L029/06 ,  H01L029/12

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J9/022 ,  H01J2201/3125

Abstract: An emitter has an electron supply and a porous cathode layer having nanohole openings. The emitter also has a tunneling layer disposed between the electron supply and the cathode layer.

Abstract translation: 发射极具有电子供体和具有纳米孔开口的多孔阴极层。 发射极还具有设置在电子源和阴极层之间的隧穿层。

公开(公告)号：US5489817A

公开(公告)日：1996-02-06

申请号：US137030

申请日：1994-03-31

Applicant: Gerd O. Muller ,  Regina Muller-Mach

Inventor： Gerd O. Muller ,  Regina Muller-Mach

IPC: H01J1/312 ,  H01J29/04 ,  H01J31/12 ,  H01J29/08

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/3125 ,  Y10S345/905

Abstract: A cold cathode (3) in the form of a solid thin film component is the basis for electron-optical terminal image devices. The thin-film structure is made up of a base electrode (5), e.g., in the form of a bundle of parallel strips, an insulating film (6), a semiconductor film (7) and a covering electrode (8), e.g., also a bundle of parallel strips but running perpendicularly to the base electrode (5) bundle. This set of layers borne on a substrate plate (4), is in an evacuated casing (2) and is opposite a fluorescent screen (12) or a light emitter (15), the metalized coating (11) of which forms the counter-pole for the electron acceleration chamber (9). The main applications of such electron-optical terminal image devices are embodiments as matrix-addressed flat displays, image converters or write/read lines.

Abstract translation: PCT No.PCT / DE92 / 00313 Sec。 371日期1994年3月31日 102（e）1994年3月31日PCT PCT 1992年4月15日提交PCT公布。 公开号WO92 / 19005 日期：1992年04月15日。以固体薄膜成分形式的冷阴极（3）是电子 - 光学终端图像器件的基础。 薄膜结构由基极（5）构成，例如以平行条状束的形式形成绝缘膜（6），半导体膜（7）和覆盖电极（8），例如 ，也是一束平行条带，但是垂直于基极（5）束行进。 承载在基板（4）上的这组层位于抽真空的外壳（2）中，与荧光屏（12）或发光体（15）相对，金属化涂层（11） 用于电子加速室（9）的极。 这种电子 - 光学终端图像装置的主要应用是作为矩阵寻址平板显示器，图像转换器或写/读线的实施例。

公开(公告)号：EP2006875A9

公开(公告)日：2009-07-22

申请号：EP07739652.1

申请日：2007-03-26

Applicant: Pioneer Corporation

Inventor： TANAKA, Ryota ,  NEGISHI, Nobuyasu ,  SAKEMURA, Kazuto ,  OKUDA, Yoshiyuki ,  NAKADA, Tomonari ,  WATANABE, Atsushi ,  YOSHIKAWA, Takamasa ,  OGASAWARA, Kiyohide

IPC: H01J1/312 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J9/022 ,  B82Y10/00 ,  H01J1/312 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/312 ,  H01J2201/3125 ,  H01J2329/0481 ,  H01J2329/0484

Abstract: [PROBLEMS] To provide an electron emitting layer with improved efficiency of electron emission and prevented damage of the device.
[SOLVING MEANS] An electron emitting device including an amorphous electron supply layer 4, an insulating layer 5 formed on the electron supply layer 4, and an electrode 6 formed on the insulating layer 5, the electron emitting device emitting electrons when an electric field is applied between the electron supply layer 4 and the electrode 6, wherein the electron emitting device includes a concave portion 7 provided by notching the electrode 6 and the insulating layer 5 to expose the electron supply layer 4, and a carbon layer 8 covering the electrode 6 and the concave portion 7 except for an inner portion 4b of an exposed surface 4a of the electron supply layer 4 and being in contact with an edge portion 4c of the exposed surface 4a of the electron supply layer 4.

公开(公告)号：EP1768153A4

公开(公告)日：2008-11-26

申请号：EP04808158

申请日：2004-12-27

Applicant: NGK INSULATORS LTD

Inventor： OHWADA IWAO ,  SATO KEI ,  KOBAYASHI NOBUYUKI ,  YOKOYAMA SHOHEI

IPC: H01J1/312 ,  H01J1/32 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J1/32 ,  B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J31/127 ,  H01J63/02 ,  H01J63/06 ,  H01J2201/3125

Abstract: An electron emission element (10A) includes an emitter (12) formed by a dielectric body, an upper electrode (14) and a lower electrode (16) to which a drive voltage Va for emitting electrons is applied. The upper electrode (14) is formed by scale-shaped conductive particles on the upper surface (12a) of the emitter (12) and has a plurality of openings (20). The portion of the upper electrode (14) opposing to the emitter (12) in the circumferential portion (26) of the openings (20) is apart from the emitter (12). Moreover, a circumferential portion (26) of the openings (20) has an acute angle shape, in a cross sectional view, toward the inner brim (26b) of the openings (20) as the tip end of the circumferential portion (26), i.e., a shape in which electric lines of force are concentrated. With the aforementioned configuration, it is possible to increase the electron emission amount as compared to the conventional electron emission element.

公开(公告)号：EP1772887A1

公开(公告)日：2007-04-11

申请号：EP06121902.8

申请日：2006-10-06

Applicant: Samsung SDI Co., Ltd.

Inventor： Son, Seung-Hyun ,  Kim, Sung-Soo ,  Jang, Sang-Hun c/o Samsung SDI Co., Ltd.

IPC: H01J1/312 ,  H01J17/49

CPC classification number: H01J11/12 ,  B82Y10/00 ,  H01J1/312 ,  H01J2201/3125

Abstract: A display device which can operate at lower driving voltages and have improved luminous efficiency is disclosed. The display device includes: a first substrate and a second substrate with a plurality of cells therebetween, a plurality of first and second electrodes arranged between the first and second substrates, insulating layers respectively formed on the first electrodes. Electrons are accelerated and emitted into the cells when voltages are applied to the first and second electrodes. A gas within the cells is excited by the electrons, and light emitting layers formed between the first and second substrates or on outer sides of the first and second substrates emits light.

Abstract translation: 公开了一种能够在较低的驱动电压下操作并且具有提高的发光效率的显示装置。 该显示装置包括：第一基板和第二基板，其间具有多个单元，多个第一和第二电极，布置在第一和第二基板之间，绝缘层分别形成在第一电极上。 当电压施加到第一和第二电极时，电子被加速并发射到电池中。 电池内的气体被电子激发，并且形成在第一和第二基板之间或第一和第二基板的外侧上的发光层发光。

公开(公告)号：EP1026721A4

公开(公告)日：2006-12-06

申请号：EP99940499

申请日：1999-08-26

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： HATAI TAKASHI ,  KOMODA TAKUYA ,  HONDA YOSHIAKI ,  AIZAWA KOICHI ,  WATABE YOSHIFUMI ,  ICHIHARA TSUTOMU ,  KONDO YUKIHIRO ,  OKA NAOMASA ,  KOSHIDA NOBUYOSHI

IPC: H01J1/312 ,  H01J9/02 ,  H01J31/12

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J31/127 ,  H01J2201/3125

Abstract: A field emission source (10) comprises a p-type silicon substrate (1), an n-type region (8) formed into stripes in a major surface of the substrate (1), strong-field drift layers (6) which are formed on the n-type region (8) in which electrons injected from the n-type region (8) drift, and which are made of oxidized porous polysilicon, a polysilicon layer (3) formed between the strong field drift layers (6), surface electrodes (7) formed into stripes in a direction perpendicular to the stripes of the n-type region (8). A voltage is selectively applied to either the n-type region (8) or the surface electrodes (7) so as to emit electrons from predetermined areas of the surface electrodes (7).

公开(公告)号：EP1220279A3

公开(公告)日：2006-03-22

申请号：EP01130625.5

申请日：2001-12-27

Applicant: Pioneer Corporation

Inventor： Chuman, Takashi, Pioneer Corporation ,  Yoshikawa,Takamasa, Pioneer Corporation ,  Hata, Takuya, Pioneer Corporation ,  Sakemura,Kazuto, Pioneer Corporation ,  Yamada, Takashi, Pioneer Corporation ,  Negishi, Nobuyasu, Pioneer Corporation ,  Iwasaki, Shingo, Pioneer Corporation ,  Satoh, Hideo, Pioneer Corporation ,  Yoshizawa, Atsushi, Pioneer Corporation ,  Ogasawara, Kiyohide, Pioneer Corporation

IPC: H01J31/12 ,  H01J1/30 ,  H01J1/312

CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J31/127 ,  H01J2201/3125

Abstract: A display device includes a backside and a front-side substrates facing each other with a vacuum space therebetween; and a plurality of electron emission sites provided on the backside substrate. Each electron emission sites includes a bottom electrode formed on a surface of the backside substrate proximate to the vacuum space, an insulator layer formed over the bottom electrode, and a top electrode formed on the insulator layer and arranged individually apart from each other and facing the vacuum space. The display device also includes a plurality of bus electrodes for electrically connecting the neighboring top electrodes; and insulating protective films each provided between the bus electrode and the insulator layer and between the bus electrode and the backside substrate.

公开(公告)号：EP1635369A1

公开(公告)日：2006-03-15

申请号：EP05254421.0

申请日：2005-07-14

Applicant: NGK INSULATORS, LTD.

Inventor： Nanataki, Tsutomu c/o Legal Affairs and I.P. Dept. ,  Yamaguchi, Hirofumi Legal Affairs and I.P. Dept. ,  Tanaka, Ritsu c/o Legal Affairs and I.P. Dept.

IPC: H01J1/30 ,  H01J1/32 ,  H01J1/312

CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J1/32 ,  H01J9/022 ,  H01J2201/306 ,  H01J2201/3125 ,  H01J2329/00

Abstract: A dielectric device of higher performance is provided. An electron emitter, to which the dielectric device is applied is provided with: an emitter including a dielectric; and an upper electrode and a lower electrode to which drive voltage is applied in order to emit electrons. The emitter is formed by the aerosol deposition method or the sol impregnation method.

Abstract translation: 提供了更高性能的电介质器件。 施加电介质器件的电子发射体设置有：包括电介质的发射体; 以及为了发射电子而施加驱动电压的上电极和下电极。 发射体通过气溶胶沉积法或溶胶浸渍法形成。