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    Laser atom probe and laser atom probe analysis method
    141.
    发明专利
    Laser atom probe and laser atom probe analysis method 审中-公开
    激光原子探针和激光原子探针分析方法

    公开(公告)号：JP2012073242A

    公开(公告)日：2012-04-12

    申请号：JP2011188103

    申请日：2011-08-31

    Applicant: Imec ,  アイメックImec

    Inventor： VANDERVORST WILFRIED

    IPC: G01N27/62 ,  G01N27/64 ,  G01Q30/02

    CPC classification number: H01J37/226 ,  H01J37/285 ,  H01J49/0004 ,  H01J2237/04 ,  H01J2237/05 ,  H01J2237/202 ,  H01J2237/248 ,  H01J2237/2855

    Abstract: PROBLEM TO BE SOLVED: To provide a laser atom probe system and a method for analyzing a specimen by laser atom probe tomography.SOLUTION: The laser atom probe system includes: a specimen holder 3 whereon a specimen 2 to be analyzed may be mounted, where the specimen has a tip shape; a detector 4; an electrode 1 arranged between the specimen holder 3 and the detector 4; a voltage source 1 configured to apply a voltage difference between the specimen tip and the electrode; a laser system 5 configured to direct a laser beam laterally at the specimen tip; tip shape monitoring means 10 configured to detect and monitor the shape of the specimen tip; and/or means for altering and/or controlling one or more laser parameters of the laser beam so as to maintain, restore or control the specimen tip shape.

    Abstract translation: 要解决的问题：提供激光原子探针系统和通过激光原子探针层析成像分析样品的方法。 解决方案：激光原子探针系统包括：样本保持器3，其中可以安装待分析的样本2，其中样本具有尖端形状; 检测器4; 布置在样本保持器3和检测器4之间的电极1; 电压源1，被配置为在所述样本末端和所述电极之间施加电压差; 激光系统5，被配置为在激光束的侧面引导激光束; 尖端形状监视装置10，被配置为检测和监视样本末端的形状; 和/或用于改变和/或控制激光束的一个或多个激光参数的装置，以便维持，恢复或控制样品末端的形状。 版权所有（C）2012，JPO＆INPIT

    Charged particle beam processing apparatus
    143.
    发明专利
    Charged particle beam processing apparatus 有权
    充电粒子加工设备

    公开(公告)号：JP2008027669A

    公开(公告)日：2008-02-07

    申请号：JP2006197218

    申请日：2006-07-19

    Applicant: Hitachi High-Technologies Corp ,  株式会社日立ハイテクノロジーズ

    Inventor： ISHIGURO KOJI ,  UMEMURA KAORU ,  KANEOKA NORIYUKI

    IPC: H01J37/31 ,  G01N1/28 ,  H01J37/317 ,  H01L21/66

    CPC classification number: H01J37/3056 ,  H01J37/3005 ,  H01J37/304 ,  H01J2237/0225 ,  H01J2237/05 ,  H01J2237/24514 ,  H01J2237/248 ,  H01J2237/30455 ,  H01J2237/31744 ,  H01J2237/31745

    Abstract: PROBLEM TO BE SOLVED: To provide a charged particle beam processing apparatus, capable of suppressing diffusion of metallic contamination to a semiconductor manufacturing process to a minimum, and of improving the yield. SOLUTION: The charged particle beam processing apparatus is provided with an ion beam column 1, connected to a vacuum vessel 10 for irradiating a sample 35 with an ion beam 11 of nonmetallic ion species; a microsampling unit 3 having a probe 16 for extracting a microsample 43 cut out from the sample 35 by the ion beam 11; a gas gun 2 for making the gas for adhering the microsample 43 and the probe 16 flow out; a beam column 6A for contamination measurement connected to the identical vacuum vessel 11, to which the ion beam column 1 is connected, for irradiating an ion beam irradiation trace by the ion beam column 1 with the beam 13 for contamination measurement; and a detector 7 for detecting the characteristic X-rays, emitted from the ion beam irradiation trace by the ion beam column 1 in irradiating the beam 13 for the contamination measurement. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 解决的问题：提供一种带电粒子束处理装置，其能够将半导体制造工序中的金属污染物的扩散抑制到最小，并提高产率。 带电粒子束处理装置设置有离子束柱1，其连接到真空容器10，用于用非金属离子种类的离子束11照射样品35; 具有用于从离子束11从样品35切出的微量样品43的探针16的微量取样单元3; 用于使用于粘附微型样品43和探针16的气体的气枪2流出; 用于污染测量的梁柱6A连接到相邻的真空容器11，离子束列1连接到该真空容器11上，用于用离子束1照射离子束照射迹线，用于污染测量的光束13; 以及检测器7，用于在照射用于污染测量的光束13时检测由离子束柱1从离子束照射迹线发射的特征X射线。 版权所有（C）2008，JPO＆INPIT

    근거리장 주사 광학 현미경
    145.
    发明公开
    근거리장 주사 광학 현미경 有权
    近场扫描光学显微镜

    公开(公告)号：KR1020130001437A

    公开(公告)日：2013-01-04

    申请号：KR1020110062172

    申请日：2011-06-27

    Applicant: 서울대학교산학협력단

    Inventor： 박남규 ,  이재성 ,  구석모 ,  크리스토프리에노 ,  자비드셔델

    IPC: G01Q60/18

    CPC classification number: G01Q60/22 ,  B82B3/0061 ,  G01Q20/02 ,  H01J2237/05

    Abstract: PURPOSE: A near field scanning optical microscope is provided to access to an electric field or a magnetic field by using a single probe. CONSTITUTION: A near field scanning optical microscope(1) includes a probe unit(10), a grid unit(20) and a light source unit(30). The probe unit is in the form of a cone. The grid unit is carved in the probe unit. The light source unit is transmitted to both sides of the probe unit. When light in the light source unit is transmitted to the grid unit, surface plasmon is generated. The surface plasmon is propagated to the vertex in the probe unit.

    Abstract translation: 目的：提供近场扫描光学显微镜，以通过使用单个探针来访问电场或磁场。 构成：近场扫描光学显微镜（1）包括探针单元（10），栅格单元（20）和光源单元（30）。 探针单元是锥体的形式。 网格单元刻在探头单元中。 光源单元被传送到探头单元的两侧。 当光源单元中的光被传输到网格单元时，产生表面等离子体激元。 表面等离子体激元传播到探针单元中的顶点。

    불균일 에너지 이온주입장치 및 이를 이용한 불균일 에너지이온주입방법
    146.
    发明授权
    불균일 에너지 이온주입장치 및 이를 이용한 불균일 에너지이온주입방법 失效
    用于部分能量植入的装置和方法

    公开(公告)号：KR100877108B1

    公开(公告)日：2009-01-07

    申请号：KR1020070065832

    申请日：2007-06-29

    Applicant: 에스케이하이닉스 주식회사

    Inventor： 노경봉 ,  김동석

    IPC: H01L21/265

    CPC classification number: H01J37/3171 ,  H01J37/3172 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/05 ,  H01L21/26513

    Abstract: An apparatus and method for partial energy ion implantation is provided to perform uneven ion implantation within a wafer by making the ion implantation energy different according to the specific aspect section of the wafer. Ion implantation equipment comprises a first deceleration part including an ion beam generator and a decelerating electrode(141) and comprises a second deceleration part including a second decelerating electrode(151). The energy of the ion beam generated from the ion beam generator decelerates by the first deceleration part. The energy of the ion beam decelerated from the first deceleration part decelerates by the second deceleration part. The energy of the ion beam slows down to the different first energy and the second energy according to the domain of the wafer in which the energy of the ion beam the ion beam is injected by the second deceleration part.

    Abstract translation: 提供了一种用于部分能量离子注入的装置和方法，通过使离子注入能量根据晶片的具体方面部分不同而在晶片内执行不均匀的离子注入。 离子注入设备包括包括离子束发生器和减速电极（141）的第一减速部分，并且包括包括第二减速电极（151）的第二减速部分。 由离子束发生器产生的离子束的能量由第一减速部减速。 从第一减速部减速的离子束的能量由第二减速部减速。 离子束的能量根据其中离子束的能量由离子束由第二减速部分注入的晶片的域而减慢到不同的第一能量和第二能量。

    이온주입장치
    149.
    发明公开
    이온주입장치 失效
    离子植入装置

    公开(公告)号：KR1020000007331A

    公开(公告)日：2000-02-07

    申请号：KR1019980026616

    申请日：1998-07-02

    Applicant: 삼성전자주식회사

    Inventor： 최기철

    IPC: H01L21/265

    CPC classification number: H01J37/3171 ,  H01J2237/05 ,  H01J2237/0827

    Abstract: PURPOSE: An ion implanting device of a backward and a forward acceleration methods is provided to uniform a dose of ions implanted into a wafer within a range of a vertically constant depth from a surface of the wafer by supplying both direct current and alternative current as power supplying acceleration energy. CONSTITUTION: The device comprises an extractor extracting ions to be implanted into a wafer by applying predetermined power from an ion supply source; a mass analyzer forming routes being different each other according to mass amount of the ions extracted from the extractor to classify specific ions; and an accelerator accelerating the specific ions classified from the mass analyzer by a power selection supply including direct power and alternative power.

    Abstract translation: 目的：提供一种向后和向前加速方法的离子注入装置，通过将直流电和替代电流作为功率提供两者，从晶片表面垂直恒定深度的范围内均匀注入到晶片中的离子剂量 提供加速能量。 构成：该装置包括通过从离子供应源施加预定功率而将要注入晶片的离子提取的提取器; 质量分析器根据从提取器提取的离子的质量来形成彼此不同的路径，以对特定离子进行分类; 以及加速由质量分析器分类的特定离子的加速器，所述电力选择电源包括直接电源和替代功率。

    이온 주입장치
    150.
    发明授权
    이온 주입장치 有权
    离子注入装置

    公开(公告)号：KR101024662B1

    公开(公告)日：2011-03-25

    申请号：KR1020087020076

    申请日：2007-02-15

    Applicant: 가부시키가이샤 아루박

    Inventor： 오가타세이지 ,  후쿠이료타 ,  요코오히데카즈 ,  니시하시츠토무

    IPC: H01L21/265 ,  H01J37/30

    CPC classification number: H01J37/3171 ,  H01J2237/05 ,  H01J2237/083 ,  H01J2237/31703

    Abstract: 소형으로 이온 빔의 안정된 평행성, 밀도분포의 높은 제어성을 실현한 단결정질 필름 제조용의 이온 주입장치를 제공한다.
    이온원(12)으로부터 수소 이온 또는 희가스 이온을 인출하고, 제1 부채형 전자석(14)에 의해 원하는 이온(B)을 선정하여 이온(B)을 주사기(16)에 의해 주사하며, 제2 부채형 전자석(18)에 의해 이온(B)을 평행화하여 기판(20)에 주입함으로써, 단결정질 필름을 제조하는 단결정질 필름 제조용의 이온 주입장치에 있어서, 제1 부채형 전자석(14)의 입구측 초점(F1) 근방에 이온원(12)을 배치한 구성으로 하였다.
    이 경우, 이온원(12)의 인출부의 개구를 원형으로 하고, 제1 부채형 전자석(14)에서의 편향면과 그것에 수직인 면에서의 입구측 초점을 일치시키도록 하면, 제1 부채형 전자석(14)을 통과 후의 이온 빔(B)의 스폿 형상은 원형으로 2면에서 완전히 평행하게 된다.
    이온 주입, 수소, 희가스, 전자석, 주사기, 평행화, 초점

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