박막형 태양전지의 제조방법
    152.
    发明公开
    박막형 태양전지의 제조방법 有权
    薄膜太阳能电池的制造方法

    公开(公告)号:KR1020110075227A

    公开(公告)日:2011-07-06

    申请号:KR1020090131614

    申请日:2009-12-28

    CPC classification number: Y02E10/50 B82B3/00 H01L31/0445

    Abstract: PURPOSE: A method for manufacturing a thin film type solar cell is provided to improve the quality of a solar cell by implementing mixing, temperature raising, and ultrasonic wave processing processes with respect to I-II-IV-VI-based materials. CONSTITUTION: A mixed solution is manufactured by mixing I-family materials, II-family materials, IV-family materials, VI-family materials, and a solvent(S1). The temperature of the mixed solution is raised, and the mixed solution undergoes an ultrasonic wave process(S2). A product obtained through the ultrasonic wave process is dried to obtain I-II-IV-VI-based semiconductor nanparticles(S3). The I-II-IV-VI-based semiconductor nanoparticles are redispersed in the solvent to form a semiconductor nanoparticle solution. The semiconductor nanoparticle solution is applied on a substrate and is thermally treated to form an absorbing layer.

    Abstract translation: 目的:提供一种制造薄膜型太阳能电池的方法,通过对I-II-IV-VI类材料实施混合,升温和超声波处理工艺来提高太阳能电池的质量。 构成:通过混合I族材料,II族材料,IV族材料,VI族材料和溶剂(S1)制造混合溶液。 混合溶液的温度升高,混合溶液进行超声波处理(S2)。 通过超声波处理获得的产物被干燥以获得I-II-IV-VI族半导体纳米颗粒(S3)。 将基于I-II-IV-VI的半导体纳米颗粒再分散在溶剂中以形成半导体纳米颗粒溶液。 将半导体纳米颗粒溶液施加在基材上并进行热处理以形成吸收层。

    박막형 태양전지 및 그 제조방법
    153.
    发明公开
    박막형 태양전지 및 그 제조방법 有权
    薄膜太阳能电池及其制造方法

    公开(公告)号:KR1020110075220A

    公开(公告)日:2011-07-06

    申请号:KR1020090131604

    申请日:2009-12-28

    Abstract: PURPOSE: A thin film type solar cell and a manufacturing method thereof are provided to form an aligned nano structure complex which is substantially and vertically aligned with respect to a light-transmitting electrode layer. CONSTITUTION: A CIGS absorbing layer is formed on a substrate by performing a solution process(S1). A buffer layer is formed on the CIGS absorbing layer by performing a chemical solution deposition process(S2,S3). A seed layer of a metal oxide is formed on the buffer layer by performing the solution process(S4). A nano-rod is grown. The nano-rod is dipped into a precursor solution of metal nano particles so as to attach the metal nano particles and to perform a thermal process(S5,S6).

    Abstract translation: 目的:提供一种薄膜型太阳能电池及其制造方法,以形成相对于透光电极层基本上和垂直取向的排列的纳米结构复合体。 构成:通过进行溶液处理(S1)在基板上形成CIGS吸收层。 通过进行化学溶液沉积工艺在CIGS吸收层上形成缓冲层(S2,S3)。 通过进行溶液处理,在缓冲层上形成金属氧化物的种子层(S4)。 生长纳米棒。 将纳米棒浸入金属纳米颗粒的前体溶液中以附着金属纳米颗粒并进行热处理(S5,S6)。

    산화물 반도체를 이용한 반도체 메모리 소자 및 그 제조방법
    154.
    发明授权
    산화물 반도체를 이용한 반도체 메모리 소자 및 그 제조방법 有权
    采用氧化物半导体的半导体存储器件及其制造方法

    公开(公告)号:KR101046176B1

    公开(公告)日:2011-07-04

    申请号:KR1020080127211

    申请日:2008-12-15

    Abstract: 본 발명은 산화물 반도체를 이용한 반도체 메모리 소자 및 그 제조방법에 관한 것이다.
    본 발명은 기판; 기판 상에 산화물 반도체로 형성되는 채널 영역 및 채널 영역과 쇼트키 접합하여 형성되는 소스 및 드레인 전극을 포함하는 액티브층; 및 액티브층 상부에 형성되는 플로팅 게이트층을 포함하는 반도체 메모리 소자를 제공한다.
    본 발명에 의하면, 반도체 메모리 소자의 소형화에 따른 여러 가지 현상을 차단하여 고집적화된 투명하고 유연한 반도체 메모리 소자를 구현할 수 있다.
    반도체 메모리 소자, 유연, 투명, 산화물 반도체, 쇼트키 장벽, 고집적

    Abstract translation: 本发明涉及使用氧化物半导体的半导体存储器件及其制造方法。

    산화물 반도체를 이용한 반도체 메모리 소자 및 그 제조방법
    155.
    发明公开
    산화물 반도체를 이용한 반도체 메모리 소자 및 그 제조방법 有权
    半导体存储器件及其制造方法使用氧化物半导体

    公开(公告)号:KR1020100068750A

    公开(公告)日:2010-06-24

    申请号:KR1020080127211

    申请日:2008-12-15

    Abstract: PURPOSE: A semiconductor memory device using an oxide semiconductor and a method for manufacturing the same are provided to improve the transparency and the flexibility of the semiconductor memory device by forming a schottky barrier on the oxide semiconductor through a metal deposition process for source and drain electrodes formation. CONSTITUTION: A channel area(112) is formed on a substrate(100) with an oxide semiconductor. Source and drain electrodes(120A, 120B) are formed by schottky joining with the channel area. A floating gate layer(140) is formed on the upper part an active layer. A tunnel insulating layer(130) is formed between the active layer and the floating gate layer. A blocking insulating layer(150) is formed on the upper part of the floating gate layer. A gate layer(160) is formed on the upper part of the blocking insulating layer.

    Abstract translation: 目的:提供一种使用氧化物半导体的半导体存储器件及其制造方法,用于通过用于源极和漏极的金属沉积工艺在氧化物半导体上形成肖特基势垒来提高半导体存储器件的透明度和柔性 形成。 构成:在具有氧化物半导体的基板(100)上形成沟道区(112)。 源极和漏极(120A,120B)通过与沟道区域的肖特基接合而形成。 浮动栅极层(140)在上部形成有源层。 隧道绝缘层(130)形成在有源层和浮栅之间。 在浮栅层的上部形成阻挡绝缘层(150)。 栅极层(160)形成在阻挡绝缘层的上部。

    액정 디스플레이용 경화성 조성물 및 이를 이용하여 제조된격벽 및 배향막을 포함하는 액정 디스플레이
    156.
    发明授权
    액정 디스플레이용 경화성 조성물 및 이를 이용하여 제조된격벽 및 배향막을 포함하는 액정 디스플레이 失效
    用于液晶显示的可固化组合物和使用其制造的包含框架RIB和对准层的液晶显示器

    公开(公告)号:KR100936518B1

    公开(公告)日:2010-01-13

    申请号:KR1020080092180

    申请日:2008-09-19

    CPC classification number: C09K19/56 G02F1/133377 G02F1/133711

    Abstract: PURPOSE: A curable composition for a liquid crystal display and the liquid crystal display comprising a barrier rib and an alignment layer manufactured using the same are provided to remove a problem that liquid crystal alignment is distorted on an interface of a liquid crystal area and a polymer barrier rib, thereby improving liquid crystal display features. CONSTITUTION: A unit structure compound composed of a curable composition includes an oligomer P, a connection part Y, and a functional group A. The oligomer P keeps viscosity of a composition. The oligomer P keeps a material property of a barrier rib after curing. The connection part Y connects the oligomer and a functional group A. In the functional group A, photo curing or a thermosetting reaction is possible. The functional group A includes a chemical structure having a conjugated structure similar to the structure of a liquid crystal. When a polarized light ultraviolet ray is applied, the functional group A has an anisotropy chemical structure inside a curable material.

    Abstract translation: 目的:提供一种用于液晶显示器的可固化组合物和使用其制造的阻挡肋和取向层的液晶显示器,以消除在液晶区域和聚合物的界面上的液晶取向失真的问题 隔壁,从而提高液晶显示的特点。 构成:由可固化组合物构成的单元结构化合物包括低聚物P,连接部分Y和官能团A.低聚物P保持组合物的粘度。 低聚物P在固化后保持障壁的材料性质。 连接部分Y连接低聚物和官能团A.在官能团A中,光固化或热固化反应是可能的。 官能团A包括具有类似于液晶结构的共轭结构的化学结构。 当施加偏振光紫外线时,官能团A在可固化材料内部具有各向异性化学结构。

    페닐카바졸기를 갖는 고분자 화합물 및 이를 이용한 고분자전계발광소자
    157.
    发明公开
    페닐카바졸기를 갖는 고분자 화합물 및 이를 이용한 고분자전계발광소자 有权
    含有苯乙烯基的聚合物和使用其的聚合物发光二极体

    公开(公告)号:KR1020080062807A

    公开(公告)日:2008-07-03

    申请号:KR1020060138930

    申请日:2006-12-29

    Abstract: A polymer compound having a phenylcarbazole group, and a polymer electroluminescent device containing the polymer compound are provided to improve hole and electron transport property and to enhance brightness and color reproduction range. A polymer compound having a phenylcarbazole group is represented by the formula 1, 2 or 3, wherein R1 to R11 are identical or different one another and are H, a halogen atom, an alkyl group, an alkoxy group, a cyano group, a nitro group, an acyl group, a substituted or unsubstituted amino group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted hetero ring having at least one halogen, nitrogen, oxygen or sulfur atom as a ring member; X1 to X4 are identical or different one another and are an alkylene group, a substituted or unsubstituted arylene group, a substituted or unsubstituted hetero arylene group, or their combination; Y1 to Y3 are a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C3-C60 heteroaryl group, or a substituted or unsubstituted fluorene group; a, b, c and d are 0 or 1; and n, m and p are an integer of 1-50,000.

    Abstract translation: 提供具有苯基咔唑基团的高分子化合物和含有高分子化合物的聚合物电致发光器件,以改善空穴和电子传输性能,并提高亮度和色彩再现范围。 具有苯基咔唑基团的高分子化合物由式1,2或3表示,其中R 1至R 11彼此相同或不同,为H,卤素原子,烷基,烷氧基,氰基,硝基 基团,酰基,取代或未取代的氨基,取代或未取代的芳基,或具有至少一个卤素,氮,氧或硫原子作为环成员的取代或未取代的杂环; X 1〜X 4相同或不同,为亚烷基,取代或未取代的亚芳基,取代或未取代的杂亚芳基或它们的组合; Y1至Y3为取代或未取代的C6-C60芳基,取代或未取代的C3-C60杂芳基或取代或未取代的芴基; a,b,c和d为0或1; n,m和p为1-50,000的整数。

    교류 구동형 백색 유기 발광 소자
    158.
    发明授权
    교류 구동형 백색 유기 발광 소자 有权
    替代电流驱动型白色有机发光器件

    公开(公告)号:KR100785354B1

    公开(公告)日:2007-12-18

    申请号:KR1020060136862

    申请日:2006-12-28

    Abstract: An AC driving type white organic light emitting device is provided to prevent the deterioration of the device due to DC driving by forming organic light emitting layers in a single or multi layer with an ionic electrolyte and generating white light even under the AC driving. An AC driving type white organic light emitting device includes a substrate(110), a first electrode layer(120), an organic light emitting layer(130), and a second electrode layer(140). The first electrode layer is formed on the substrate by a sputtering or ion plating method, and is an anode electrode for injecting a hole. The organic light emitting layer includes ionic electrolyte formed on the first electrode layer. The second electrode layer is formed on the organic light emitting layer, and is a cathode electrode for injecting an electron.

    Abstract translation: 提供一种AC驱动型白色有机发光器件,以通过在具有离子电解质的单层或多层中形成有机发光层,甚至在交流驱动下也产生白光来防止由于直流驱动引起的器件劣化。 交流驱动型白色有机发光器件包括基板(110),第一电极层(120),有机发光层(130)和第二电极层(140)。 通过溅射或离子镀法在基板上形成第一电极层,并且是用于注入孔的阳极电极。 有机发光层包括在第一电极层上形成的离子电解质。 第二电极层形成在有机发光层上,是用于注入电子的阴极。

    가시광에 감응하는 백금이온이 도핑된 이산화티탄 광촉매의제조 방법

    公开(公告)号:KR100691585B1

    公开(公告)日:2007-03-12

    申请号:KR1020050124619

    申请日:2005-12-16

    Abstract: A method for preparing a TiO2 photocatalyst doped with platinum ions capable of effectively decomposing various recalcitrant organic matters under the irradiation of a visible light by doping platinum ions capable of making a new trap site between energy band gaps of TiO2 is provided. A method for preparing a TiO2 photocatalyst doped with platinum ions sensitive to a visible light comprises: a step(a) of agitating a solution containing a Pt-ion precursor and a solution containing a TiO2 precursor, thereby doping Pt ions in TiO2 lattices to form TiO2 doped with Pt ions in a sol state; a step(b) of performing flash evaporation of the TiO2 doped with Pt ions in a sol state at 70 deg.C to form TiO2 doped with Pt ions in a powered state; and a step(c) of firing the TiO2 doped with Pt ions in a powered state at 100 to 500 deg.C for 4 hours. The Pt ions are doped into the TiO2 lattices at a ratio of 0.1 to 5% based on the number of titanium atoms. The step(a) comprises: a step(a1) of dissolving chloroplatinic acid(H2PtCl6) into water and adding nitric acid to the dissolved solution; and a step(a2) of dropping a solution in which titanium tetraisopropoxide is dissolved into ethanol into the solution formed in the step(a1), and stirring the resulting solution.

    Abstract translation: 本发明提供一种掺杂有铂离子的二氧化钛光催化剂的制备方法,该方法能够在可见光的照射下,通过掺杂能够在二氧化钛的能带隙之间形成新的俘获点的铂离子,有效地分解各种难降解有机物。 制备掺杂有对可见光敏感的铂离子的TiO 2光催化剂的方法包括:步骤(a):搅拌含有Pt离子前体的溶液和含有TiO 2前体的溶液,由此掺杂TiO 2晶格中的Pt离子以形成 在溶胶状态下用Pt离子掺杂的TiO 2; 步骤(b):在70摄氏度的溶胶状态下对掺杂有Pt离子的TiO 2进行闪蒸以形成掺杂有Pt离子的处于通电状态的TiO 2; 以及在100至500摄氏度下以通电状态焙烧掺杂有Pt离子的TiO 2 4小时的步骤(c)。 基于钛原子的数量,将Pt离子以0.1至5%的比率掺杂到TiO 2晶格中。 步骤(a)包括:将氯铂酸(H 2 PtCl 6)溶解于水中并向溶解的溶液中加入硝酸的步骤(a1) 和将溶解有四异丙醇钛的溶液滴加到乙醇中形成的溶液中并搅拌所得溶液的工序(a2)。

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