公开(公告)号：KR100918400B1

公开(公告)日：2009-09-21

申请号：KR1020080105481

申请日：2008-10-27

Applicant: 한국전자통신연구원

Inventor： 박미란 ,  권오균

IPC: H01S5/18

Abstract: 본 발명의 표면 방출 레이저 소자에 따르면, 장파장 빛을 표면 방출하는 하부 거울층, 광 이득을 제공하는 활성층, 자유 캐리어(free carrier) 흡수 손실을 줄이기 위한 터널 접합층 및 상부 거울층이 화합물 반도체 기판 상에 순차적으로 적층되고, 상기 활성층, 터널 접합층 및 상부 거울층 중 적어도 어느 하나의 측면에 식각에 의하여 구경부가 형성되고,상기 구경부가 형성되는 층보다 더 큰 열 전도성을 갖는 열 방출층이 상기 구경부에 채워지는 것이 특징이다.

公开(公告)号：KR1020080098574A

公开(公告)日：2008-11-11

申请号：KR1020080105481

申请日：2008-10-27

Applicant: 한국전자통신연구원

Inventor： 박미란 ,  권오균

IPC: H01S5/18

CPC classification number: H01S5/18308 ,  H01S3/0405 ,  H01S5/321 ,  H01S5/3216

Abstract: A long wavelength vertical cavity surface emitting laser device and a method for manufacturing the same improve performance and reliability of a device by growing all layers with a lattice matched crystal state. A lower mirror layer(20) emits the laser with surface. An active layer(40) provides an optical gain. A tunnel junction layer(60) and an upper mirror layer(80) for reducing the free carrier absorption loss are successively laminated on a compound semiconductor substrate. A vacant part is formed in at least one side among the active layer, the tunnel junction layer and the mirror layer by etching. A thermal dissipation layer having the thermal conductance which is higher than the layer in which the vacant part is formed is filled in the vacant part.

Abstract translation: 长波长垂直腔表面发射激光器件及其制造方法通过以晶格匹配晶体状态生长所有层来提高器件的性能和可靠性。 下镜层（20）用表面发射激光。 有源层（40）提供光学增益。 在化合物半导体基板上依次层叠用于减少自由载流子吸收损失的隧道结层（60）和上镜层（80）。 在有源层，隧道结层和镜层中的至少一侧通过蚀刻形成空位部。 具有高于其中形成有空位部分的层的导热性的散热层填充在空白部分中。

公开(公告)号：KR1020080052197A

公开(公告)日：2008-06-11

申请号：KR1020070047284

申请日：2007-05-15

Applicant: 한국전자통신연구원

Inventor： 박미란 ,  권오균

IPC: H01S3/10

CPC classification number: H01S5/18366 ,  H01S3/1301 ,  H01S3/1304 ,  H01S5/02244

Abstract: A long wavelength vertical cavity surface emitting laser device and a method for fabricating the same are provided to prevent the crystal defect or plastic deformation by using an epitaxial growing method. In a long wavelength vertical cavity surface emitting laser device, a low mirror layer(20), an active layer(40), a tunnel junction layer(60), and an upper mirror layer(80) are laminated on a compound semiconductor substrate(10), sequentially. The lower mirror layer emits long wavelength light. The active layer provides an optical gain. The tunnel junction layer confines the current. An aperture portion is formed on a side of at least one among the active layer, the tunnel junction layer, and the upper mirror layer using etching. A heat discharging layer(90) having higher heat conductivity than the layer on which the aperture portion is formed, is filled in the aperture portion.

Abstract translation: 提供长波长垂直腔表面发射激光器件及其制造方法，以通过使用外延生长方法来防止晶体缺陷或塑性变形。 在长波长垂直腔表面发射激光器件中，将低镜层（20），有源层（40），隧道结层（60）和上镜层（80）层叠在化合物半导体衬底 10）。 下镜层发出长波长的光。 有源层提供光学增益。 隧道结层限制了电流。 利用蚀刻在活性层，隧道结层和上镜层中的至少一个的一侧上形成开口部。 具有比形成有开口部的层的导热性高的放热层（90）填充在开口部中。

公开(公告)号：KR100440254B1

公开(公告)日：2004-07-15

申请号：KR1020020031972

申请日：2002-06-07

Applicant: 한국전자통신연구원

Inventor： 한원석 ,  유병수 ,  권오균 ,  노정래 ,  신재헌 ,  주영구

IPC: H01S5/18

Abstract: PURPOSE: An anti-guide type surface emitting laser and a method for manufacturing the same are provided to realize a high power with a low current at a single mode since the output light is small in size and it scarcely diverges, thereby reducing the manufacturing cost thereof. CONSTITUTION: An anti-guide type surface emitting laser includes a lower Bragg mirror layer(102), a resonance layer(103), a beam width control layer(113) and an upper Bragg mirror layer(109). The beam width control layer(113) formed on top of the resonance layer(103) includes a first thin film(104) defining the central portion as a current injection region, a second thin film layer(105) for generating an effective refraction index difference between the peripheral portion and the central portion and a third thin film(107) formed between the first thin film(104) and the second thin film(105). The lower Bragg mirror layer(102) is formed on a semiconductor substrate and the resonance layer(103) is formed on top of the lower Bragg mirror layer(102). The upper Bragg mirror layer(109) formed on top of the beam width control layer(113) has a step at a boundary between the edge portion and the central portion by the second thin film(105).

Abstract translation: 目的：提供一种抗引导型表面发射激光器及其制造方法，以在单模下实现低电流的高功率，因为​​输出光尺寸小并且几乎不发散，从而降低了制造成本 它们。 构成：一种防引导型表面发射激光器包括下布拉格镜面层（102），谐振层（103），射束宽度控制层（113）和上布拉格反射镜层（109）。 形成在谐振层（103）顶部的束宽控制层（113）包括限定中心部分作为电流注入区的第一薄膜（104），用于产生有效折射率的第二薄膜层（105） 周边部分和中央部分之间的差异以及在第一薄膜（104）和第二薄膜（105）之间形成的第三薄膜（107）。 下布拉格镜像层（102）形成在半导体衬底上，并且谐振层（103）形成在下布拉格镜像层（102）的顶部上。 在光束宽度控制层（113）顶部形成的上布拉格镜层（109）在第二薄膜（105）的边缘部分和中心部分之间的边界处具有台阶。

公开(公告)号：KR100427583B1

公开(公告)日：2004-04-28

申请号：KR1020020002494

申请日：2002-01-16

Applicant: 한국전자통신연구원

Inventor： 주영구 ,  한원석 ,  권오균 ,  신재헌 ,  유병수 ,  노정래

IPC: H01S5/18

CPC classification number: H01S5/18308 ,  H01L33/145 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2063

Abstract: The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes forming a layer having a high resistance near the surface by implanting heavy ions such as silicon (Si), so that the minimum current injection diameter is made very smaller unlike implantation of a proton. Further, the present invention includes regrowing crystal so that current can flow the epi surface in parallel to significantly reduce the resistance up to the current injection part formed by silicon (Si) ions. Therefore, the present invention can not only effectively reduce the current injection diameter but also significantly reduce the resistance of a device to reduce generation of a heat. Further, the present invention can further improve dispersion of a heat using InP upon regrowth and thus improve the entire performance of the device.

Abstract translation: 本发明涉及一种制造垂直腔表面发射激光器的方法，该激光器被视为用于长波长通信的光源。 本发明包括通过注入诸如硅（Si）的重离子在表面附近形成具有高电阻的层，使得与质子的注入不同，最小电流注入直径非常小。 此外，本发明包括再生晶体，使得电流能够平行地流过epi表面，以显着降低直到由硅（Si）离子形成的电流注入部分的电阻。 因此，本发明不仅能够有效地减小电流注入直径，而且还能够显着降低器件的电阻以减少热量的产生。 此外，本发明在再生长时可以进一步改善使用InP的热量的分散，从而改善装置的整体性能。

公开(公告)号：KR100349663B1

公开(公告)日：2002-08-22

申请号：KR1019990057254

申请日：1999-12-13

Applicant: 한국전자통신연구원

Inventor： 권오균 ,  유병수 ,  백종협 ,  신재헌

IPC: H01S5/20

Abstract: 본발명은전류주입및 열선층을이용하여편광을제어하는표면방출레이저및 그의제조방법에관한것으로, 이를위한본 발명의표면방출레이저는반도체기판상에형성된하부거울층, 공진활성층, 상부거울층을포함하고, 상기상부거울층을포함한공진활성층식각후 매립되거나불순물이온주입에의한절연층, 상기상부거울층에형성되며레이징을위한전류를공급받는제1상부금속층, 상기절연층에의해상기제1상부금속층과격리되고상기반도체기판에대해서로수직방향으로편광을제어하는제2상부금속층, 상기반도체기판의저면에형성되어상기제1상부금속층과동시에레이징전류를주입받는제1하부금속층, 상기반도체기판의저면에상기제1하부금속층과일정거리를두고형성되어상기제2상부금속층과동시에편광제어전류를주입받는제2하부금속층을포함하여이루어진다.

公开(公告)号：KR100340037B1

公开(公告)日：2002-06-15

申请号：KR1020000047840

申请日：2000-08-18

Applicant: 한국전자통신연구원

Inventor： 주영구 ,  권오균 ,  유병수

IPC: H01S5/18

Abstract: 본 발명은 화합물 반도체 제조 기술에 관한 것으로, 특히 개선된 전류 감금 구조를 가진 InAlGaAs계 수직 공진 표면광 레이저의 구조 및 제조방법에 관한 것이다. 본 발명은 전류 주입 직경이 감소함에 따라 저항이 급격히 증가하는 문제가 없고, 낮은 임계 전류를 실현할 수 있으며, InAlGaAs, InAlAs, InP로 구성된 1.3 ∼ 1.55 ㎛ 장파장용 수직 공진 표면광 레이저에서 적용할 수 있으며, 제작 공정이 간단하고 안정적이어서 실제 소자의 양산에 적용될 수 있음을 물론, 열 방출 효율을 증대시킬 수 있는 InAlGaAs계 수직 공진 표면광 레이저 및 그 제조방법을 제공하는데 그 목적이 있다. 본 발명은 하부 거울층을 포함하는 하부 구조와, 전류 감금층 및 그 상부에 제공되는 상부 거울층을 포함하는 레이저 기둥을 구비하는 InAlGaAs계 수직 공진 표면광 레이저에 있어서, 상기 하부 구조 최상부에 제1 InP층이 배치되며, 상기 레이저 기둥의 상기 상부 거울층 하부에 제2 InP층이 배치되며, 상기 제1 및 제2 InP층 사이에 배치되는 상기 전류 감금층의 직경이 상기 레이저 기둥의 직경보다 작게 제공되는 것을 특징으로 한다.

公开(公告)号：KR1020020014508A

公开(公告)日：2002-02-25

申请号：KR1020000047840

申请日：2000-08-18

Applicant: 한국전자통신연구원

Inventor： 주영구 ,  권오균 ,  유병수

IPC: H01S5/18

Abstract: PURPOSE: An InAlGaAs VCSEL(Vertical Cavity Surface Emitting Laser) having an improved current confinement scheme is provided, which prevents a rapid increase of a resistance by a decrease of a current confinement diameter and has a low threshold current and can increase a heat release efficiency. CONSTITUTION: An InAlGaAS/InAlAs bottom reflective mirror layer(10) and an active medium and a cladding layer(11) and the first InP wet etching mask layer(12a) are stacked on an InP substrate, and an InAlGaAs/InAlAs current confinement layer(13) is arranged on a center of the upper part. An InP insulation layer(14) is arranged to surround the InAlGaAs/InAlAs current confinement layer on an upper part of the first InP wet etching mask layer. Also, the second InP wet etching mask layer(12b), an InAlGaAs/InAlAs top reflective mirror layer(15) and an electrode(16) are stacked. The top/bottom reflective mirror are distributed Bragg reflectors and are formed with InAlGaAs/InAlAs. The InP insulation layer or an air gap act as an insulation layer and a current pass diameter of a current injected through the electrode is decreased at the InAlGaAs/InAlAs current confinement layer. Also, when the current confinement layer is arranged on a laser active medium, a threshold current is reduced without carrier loss.

Abstract translation: 目的：提供具有改进的电流限制方案的InAlGaAs VCSEL（垂直腔表面发射激光器），其通过减小电流限制直径来防止电阻的快速增加并且具有低的阈值电流并且可以增加放热效率 。 构成：将InAlGaAS / InAlAs底部反射镜层（10）和有源介质和包层（11）和第一InP湿蚀刻掩模层（12a）堆叠在InP衬底上，并且将InAlGaAs / InAlAs电流限制层 （13）布置在上部的中心。 InP绝缘层（14）被布置成围绕第一InP湿蚀刻掩模层的上部上的InAlGaAs / InAlAs电流限制层。 此外，堆叠第二InP湿式蚀刻掩模层（12b），InAlGaAs / InAlAs顶部反射镜层（15）和电极（16）。 顶部/底部反射镜是分布式布拉格反射器，并由InAlGaAs / InAlAs形成。 InP绝缘层或气隙充当绝缘层，并且在InAlGaAs / InAlAs电流限制层处降低了通过电极注入的电流的电流通过直径。 此外，当电流限制层布置在激光活性介质上时，阈值电流减小而没有载波损耗。

公开(公告)号：KR1020010046631A

公开(公告)日：2001-06-15

申请号：KR1019990050468

申请日：1999-11-13

Applicant: 한국전자통신연구원

Inventor： 유병수 ,  권오균 ,  백종협 ,  신재헌

IPC: H01S5/30

Abstract: PURPOSE: A polarization reconfigurable surface emission laser device and a method for manufacturing the same are provided to control to oscillate two polarization vertical to each other without a change of a transverse mode property depending on an electrode injecting a current. CONSTITUTION: In a surface emission type of laser device, an under mirror layer(22) and an active layer(23) are applied subsequentially on a semiconductor substrate(21). An upper mirror layers(24,25) are formed on the active layer. The center part of the upper mirror layer has a circular shape and the peripheral part of the upper mirror layer is patterned into a criss-crossing shape. The under peripheral part of the upper mirror layer is isolated from the active layer by an isolation layer(27). The first, second, third and fourth electrodes(29a,29b,29c,29d) which are isolated to each other are formed on the criss-crossing shape of the peripheral part of the upper mirror layer.

Abstract translation: 目的：提供一种极化可重构面发射激光器件及其制造方法，以根据注入电流的电极来控制相互垂直振荡两个极化而不改变横向模式特性。 构成：在表面发射型激光装置中，将下镜面（22）和有源层（23）顺序施加在半导体衬底（21）上。 在有源层上形成上镜层（24,25）。 上镜层的中心部分具有圆形形状，并且将上镜面镜的周边部分图案化成十字交叉的形状。 上镜层的下周边部分通过隔离层（27）与有源层隔离。 彼此隔离的第一，第二，第三和第四电极（29a，29b，29c，29d）形成在上镜面的周边部分的交叉形状上。

公开(公告)号：KR1020000033364A

公开(公告)日：2000-06-15

申请号：KR1019980050204

申请日：1998-11-23

Applicant: 한국전자통신연구원

Inventor： 이규석 ,  권오균

IPC: G01N21/00

Abstract: PURPOSE: A device for photo activation is provided. CONSTITUTION: A device for photo activation comprises an upper unit(10) having a through hole, first and second helical units being formed at its inner circumferential surface; a temperature adjusting unit(30) having a through hole in its longitudinal direction, a helical unit to be connected to the second helical unit, and two protruding units having a temperature adjusting wire therebetween, the lower protruding unit having an insertion hole; an optical fiber receiving means(20) having an optical fiber receiving unit for receiving an optical fiber, being received in the through hole of the temperature adjusting unit(30), and being connected to the first helical unit; a spring pin unit(40) received in the insertion hole of the lower protruding unit; a connecting unit(50) having a plurality of second through holes; and a sample stay unit(60) having a helical unit on its outer circumferential surface to be connected to a first center through unit, and having a turn plate. As a result, the optical fiber and the solid sample can be directly bonded to each other, thereby efficiently achieving photo activation of semiconductor, super conductor, polymer and other solid materials.

Abstract translation: 目的：提供一种用于照片激活的设备。 构成：用于光激活的装置包括具有通孔的上单元（10），第一和第二螺旋单元在其内圆周表面上形成; 温度调节单元（30），其纵向具有通孔，与第二螺旋单元连接的螺旋单元和两个具有温度调节线的突出单元，所述下突出单元具有插入孔; 具有接收光纤的光纤接收单元的光纤接收装置（20）被容纳在温度调节单元（30）的通孔中，并连接到第一螺旋单元; 弹簧销单元（40），其容纳在下突出单元的插入孔中; 连接单元（50），具有多个第二通孔; 以及具有在其外周面上具有螺旋单元以连接到第一中心通过单元并具有转板的样品滞留单元（60）。 结果，可以将光纤和固体样品直接接合，从而有效地实现半导体，超导体，聚合物等固体材料的光活化。