-
151.发明申请Deposited thin films and their use in detection, attachment, and bio-medical applications 失效沉积的薄膜及其在检测，附着和生物医学应用中的应用公开(公告)号：US20020048531A1
公开(公告)日：2002-04-25
申请号：US09739940
申请日：2000-12-19
Inventor： Stephen J. Fonash , Sanghoon Bae , Daniel J. Hayes , Joseph Cuiffi
IPC: G01N035/02 , G01N015/06 , G01N033/00 , G01N029/00 , G01N021/00 , B32B027/12 , G01N035/08
CPC classification number: C23C16/511 , B81B2201/0214 , B81C1/0038 , B81C2201/0176 , C23C16/24 , G01N21/17 , G01N27/44717 , Y10T436/119163 , Y10T436/25 , Y10T436/2575
Abstract: The present invention is directed to the use of deposited thin films for chemical or biological analysis. The invention further relates to the use of these thin films in separation adherence and detection of chemical of biological samples. Applications of these thin films include desorption-ionization mass spectroscopy, electrical contacts for organic thin films and molecules, optical coupling of light energy for analysis, biological materials manipulation, chromatographic separation, head space adsorbance media, media for atomic molecular adsorbance or attachment, and substrates for cell attachment.
Abstract translation: 本发明涉及使用沉积的薄膜进行化学或生物分析。 本发明还涉及这些薄膜在分离粘附和生物样品化学检测中的应用。 这些薄膜的应用包括解吸电离质谱，有机薄膜和分子的电接触，用于分析的光能的光耦合，生物材料操作，色谱分离，顶空吸附介质，用于原子分子吸附或附着的介质，以及 细胞附着物。
-
公开(公告)号：US20240317577A1
公开(公告)日：2024-09-26
申请号：US18271675
申请日：2021-02-10
Applicant: Mitsubishi Electric Corporation
Inventor： Yusuke SHIRAYANAGI
CPC classification number: B81B7/0006 , B81C1/00095 , B81B2201/042 , B81B2203/0109 , B81B2203/04 , B81B2207/096 , B81C2201/0132 , B81C2201/0176 , B81C2201/0198
Abstract: An optical scanning device, which is a MEMS element, includes a first insulating layer, a first semiconductor layer, a second insulating layer, and a second semiconductor layer that are laminated in this order, a first doped region formed at an interface between the first insulating layer and the first semiconductor layer, a second doped region formed at an interface between the first semiconductor layer and the second insulating layer, and a first wiring portion and a second wiring portion disposed on the first insulating layer apart from each other. The first doped region and the second doped region are electrically connected in parallel between the first wiring portion and the second wiring portion.
-
公开(公告)号：US20240100566A1
公开(公告)日：2024-03-28
申请号：US18530629
申请日：2023-12-06
Applicant: BFLY OPERATIONS, INC.
Inventor： Lingyun Miao , Keith G. Fife , Jianwei Liu , Jonathan M. Rothberg
CPC classification number: B06B1/0292 , B81B3/001 , B81C1/00984 , B81B2203/0127 , B81B2203/0315 , B81B2203/0392 , B81C2201/0109 , B81C2201/0125 , B81C2201/0176
Abstract: An ultrasound transducer device made by a process that includes the steps of forming depositing a first layer on a substrate, depositing a second layer on the first layer, patterning the second layer at a region corresponding to a location of a transducer cavity, depositing a third layer that refills regions created by patterning the second layer, planarizing the third layer to a top surface of the second layer, removing the second layer, conformally depositing a fourth layer over the first layer and the third layer, defining the transducer cavity in a support layer formed over the fourth layer; and bonding a membrane to the support layer.
-
公开(公告)号：US20230149976A1
公开(公告)日：2023-05-18
申请号：US18093701
申请日：2023-01-05
Applicant: BFLY OPERATIONS, INC.
Inventor： Lingyun Miao , Keith G. Fife , Jianwei Liu , Jonathan M. Rothberg
CPC classification number: B06B1/0292 , B81B3/001 , B81C1/00984 , B81B2203/0315 , B81C2201/0176 , B81B2203/0127 , B81C2201/0109 , B81C2201/0125 , B81B2203/0392
Abstract: A method of forming an ultrasonic transducer device involves depositing a first layer on a substrate, depositing a second layer on the first layer, patterning the second layer at a region corresponding to a location of a transducer cavity, depositing a third layer that refills regions created by patterning the second layer, planarizing the third layer to a top surface of the second layer, removing the second layer, conformally depositing a fourth layer over the first layer and the third layer, defining the transducer cavity in a support layer formed over the fourth layer; and bonding a membrane to the support layer.
-
公开(公告)号：US20180148328A1
公开(公告)日：2018-05-31
申请号：US15825818
申请日：2017-11-29
Inventor： Vincent AGACHE , Francois BALERAS
IPC: B81C1/00
CPC classification number: B81C1/00476 , B81B3/0021 , B81B2201/0214 , B81B2201/0264 , B81B2203/0118 , B81C1/00944 , B81C1/00952 , B81C2201/0109 , B81C2201/0132 , B81C2201/0176 , B81C2201/0178 , B81C2201/0181 , B81C2201/019 , B81C2201/053
Abstract: The invention is a process for producing an electromechanical device including a movable portion that is able to deform with respect to a fixed portion. The process implements steps based on fabrication microtechnologies, applied to a substrate including an upper layer, an intermediate layer and a lower layer. These steps are: a) forming first apertures in the upper layer; b) forming an empty cavity in the intermediate layer, which step is referred to as a pre-release step because a central portion of the upper layer lying between the first apertures is pre-released; c) applying what is called a blocking layer to the upper layer, this layer covering the first apertures, the blocking layer and the central portion together forming a suspended microstructure above the empty cavity; d) producing a boundary trench in the suspended microstructure, so as to form, in this microstructure, a movable portion and a fixed portion, the movable portion forming a movable member of the electromechanical device.
-
Patent Agency Ranking
公开(公告)号：US09969613B2
公开(公告)日：2018-05-15
申请号：US13861620
申请日：2013-04-12
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
-
公开(公告)号：US09938137B2
公开(公告)日：2018-04-10
申请号：US15162997
申请日：2016-05-24
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
-
公开(公告)号：US09919916B2
公开(公告)日：2018-03-20
申请号：US15031957
申请日：2014-10-15
Applicant: Semitechnologies Limited
CPC classification number: B81C1/00111 , A61M37/0015 , A61M2037/003 , A61M2037/0053 , B81B2201/055 , B81C2201/0132 , B81C2201/0133 , B81C2201/0159 , B81C2201/0176 , B81C2201/0181 , C23C16/402
Abstract: A method of forming microneedles where through a series of coating and etching processes microneedles are formed from a surface as an array. The microneedles have a bevelled end and bore which are formed as part of the process with no need to use a post manufacturing process to finish the microneedle.
-
公开(公告)号：US09868628B2
公开(公告)日：2018-01-16
申请号：US15066799
申请日：2016-03-10
Inventor： Yu-Chia Liu , Chia-Hua Chu , Chun-Wen Cheng
CPC classification number: B81B7/0006 , B81B7/0051 , B81B2201/0257 , B81B2201/0264 , B81B2201/0271 , B81C1/00246 , B81C2201/0132 , B81C2201/0133 , B81C2201/0176 , B81C2201/0181 , B81C2201/112 , B81C2203/0714 , B81C2203/0735
Abstract: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.
-
公开(公告)号：US20170260042A1
公开(公告)日：2017-09-14
申请号：US15066799
申请日：2016-03-10
Inventor： Yu-Chia Liu , Chia-Hua Chu , Chun-Wen Cheng
CPC classification number: B81B7/0006 , B81B7/0051 , B81B2201/0257 , B81B2201/0264 , B81B2201/0271 , B81C1/00246 , B81C2201/0132 , B81C2201/0133 , B81C2201/0176 , B81C2201/0181 , B81C2201/112 , B81C2203/0714 , B81C2203/0735
Abstract: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.
-
-
-
-
-
-
-
-
-
Search Results
210
records
(took 0.027 seconds)
