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公开(公告)号：KR1020080021240A
公开(公告)日：2008-03-07
申请号：KR1020060083844
申请日：2006-08-31
Applicant: 삼성전자주식회사
Abstract: A call setup method in a mobile communication system and a device thereof are provided to change a channel if newly calculated activation time expires, when a response is not received from a UE(User Equipment) in the mobile communication system, thereby increasing a call setup success rate. An RB(Radio Bearer) setup message including radio link configuration information and activation time indicative of a time for changing a radio link configuration is transmitted to a UE through a base station(401,403). It is confirmed whether a response message for the setup message is received from the UE(405). If not, the setup message is retransmitted(407). If the response message is not received from the UE, the base station re-determines activation time indicative of a time for changing a configuration of a radio link, and transmits a radio link reconfiguration command message to the base station(409-413). If an RB setup complete message is received from the UE, a response message for the complete message is transmitted to the UE(415,417).
Abstract translation: 提供移动通信系统中的呼叫建立方法及其装置，用于当新计算的激活时间到期时，当在移动通信系统中没有从UE（用户设备）接收到响应时，改变信道，从而增加呼叫建立 成功率。 通过基站（401,403）向UE发送包括无线电链路配置信息和指示用于改变无线电链路配置的时间的激活时间的RB（无线承载）建立消息。 确认是否从UE接收到针对建立消息的响应消息（405）。 如果不是，则重发建立消息（407）。 如果没有从UE接收到响应消息，则基站重新确定指示用于改变无线链路的配置的时间的激活时间，并向基站发送无线链路重配置命令消息（409-413）。 如果从UE接收到RB设置完成消息，则将完整消息的响应消息发送给UE（415,417）。
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公开(公告)号：KR1020080006358A
公开(公告)日：2008-01-16
申请号：KR1020060065469
申请日：2006-07-12
Applicant: 삼성전자주식회사
Abstract: A method for operating a non-volatile memory device is provided to achieve high integration density by being operated with a low operation current. A non-volatile memory device includes a semiconductor substrate, first and second resistance layers(122,124) formed around the surface of the semiconductor substrate as storing variable resistor state. A first buried electrode(112) is formed on the semiconductor substrate below the first resistance layer and is connected to the first resistance layer. A second buried electrode(114) is formed on the semiconductor substrate below the second resistance layer, and is connected to the second resistance layer. A gate electrode(132) is formed on the semiconductor substrate, and is extended as crossing the first and the second resistance layers. A gate insulation film(130) is formed between the semiconductor substrate and the gate electrode. According to a method for operating the non-volatile memory device, two bits data are programmed on the first and the second resistance layers by using the first buried electrode as a first bit line, the second buried electrode as a second bit line and the gate electrode as a word line. Two bits data programmed on the first and the second resistance layers are read out.
Abstract translation: 提供一种用于操作非易失性存储器件的方法，以通过以低操作电流操作来实现高集成度密度。 非易失性存储器件包括半导体衬底，形成在半导体衬底的表面周围的存储可变电阻器状态的第一和第二电阻层（122,124）。 第一掩埋电极（112）形成在第一电阻层下方的半导体衬底上并连接到第一电阻层。 第二埋电极（114）形成在第二电阻层下方的半导体衬底上，并连接到第二电阻层。 栅极电极（132）形成在半导体衬底上，并且与第一和第二电阻层交叉而延伸。 在半导体衬底和栅电极之间形成栅极绝缘膜（130）。 根据用于操作非易失性存储器件的方法，通过使用第一掩埋电极作为第一位线，将第二掩埋电极作为第二位线，并且栅极 电极作为字线。 读出在第一和第二电阻层上编程的两位数据。
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公开(公告)号：KR100765202B1
公开(公告)日：2007-10-09
申请号：KR1020060132172
申请日：2006-12-21
Applicant: 삼성전자주식회사
CPC classification number: F04C28/22 , F04C23/001 , F04C23/008 , F04C28/24 , F04C29/0021 , F04C29/124 , F04C2210/22 , F04C2240/40 , Y10S415/00 , Y10S417/902
Abstract: A variable capacity rotary compressor is provided to minimize impact between a first vane and a first roller since the first vane makes movement to the first roller side when they are closest to each other. A variable capacity rotary compressor comprises a housing, first and second rollers(42,52), first and second vanes(43,53), first and second vane guide grooves(44,54), and a vane control device(60). The housing is provided with first and second compression chambers(31,32) that are divided from each other. The first and second rollers are rotatably installed inside the first and second compression chambers respectively with opposite offset directions. The first and second vanes make advancing and retreating movement respectively by the rotation of the first and second rollers. The first and second vane guide grooves are formed in the housing for guiding retreating movement of the first and second vanes. The vane control device is capable of controlling the operation of the first vane. The first vane guide groove is provided with a closed chamber on a rear side of the first vane. The vane control device includes a connection path(61) connected to the closed chamber of the first vane guide groove, a high pressure path(65) connecting the connection path to the second vane guide groove, a low pressure path connecting the connection path to a suction side of the compressor, and a control valve(64) allowing the connection path to make selective connection with either the low pressure path or high pressure path. The inlet of the high pressure path is opened and closed by advancing and retreating movement of the second vane.
Abstract translation: 提供可变容量的旋转式压缩机，以最小化第一叶片和第一辊子之间的冲击，因为当第一叶片彼此最接近时，第一叶片移动到第一辊侧。 可变容量的旋转压缩机包括壳体，第一和第二辊（42,52），第一和第二叶片（43,43），第一和第二叶片引导槽（44,54）和叶片控制装置（60）。 壳体设置有彼此分开的第一和第二压缩室（31,32）。 第一和第二辊分别以相反的偏移方向可旋转地安装在第一和第二压缩室的内部。 第一和第二叶片通过第一和第二辊的旋转分别进行前进和后退运动。 第一和第二叶片导向槽形成在壳体中，用于引导第一和第二叶片的后退运动。 叶片控制装置能够控制第一叶片的操作。 第一叶片引导槽在第一叶片的后侧设置有封闭室。 叶片控制装置包括连接到第一叶片导向槽的封闭室的连接路径（61），将连接路径连接到第二叶片引导槽的高压路径（65），将连接路径连接到 压缩机的吸入侧和允许连接路径与低压路径或高压路径进行选择性连接的控制阀（64）。 通过第二叶片的前进和后退运动，高压路径的入口被打开和关闭。
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公开(公告)号：KR1020040056806A
公开(公告)日：2004-07-01
申请号：KR1020020083386
申请日：2002-12-24
Applicant: 삼성전자주식회사
Inventor： 조경래
IPC: H04W16/00
Abstract: PURPOSE: A method for allocating frequency resource of a base station in a mobile communication system is provided to calculate the smallest number of frequency resources by controlling frequency resources of each base station required for providing service with the same quality. CONSTITUTION: A total amount(T) of requested traffic of a certain service area is calculated(200). A total number(Bn) of base stations of the certain service area a base station radio capacity(B1) for 1FA are inputted(205). The number of the first frequency resources is calculated(210). An initial value of the number(Bn1) of the first base stations is set to be the same as the total number of base stations(Bn)(215). An amount of residual traffic is calculated(225). It is determined whether the amount of residual traffic is smaller than 0(230). If the amount of residual traffic is not smaller than 0, the second frequency resource is calculated(235). It is determined whether the number of the first frequency resources and the number of the second frequency resources are the same(240). If they are the same, it is determined whether the number of the first base stations is equal to a value obtained by subtracting 1 from the total number of base stations(245). If the number of the first base stations is equal to a value obtained by subtracting 1 from the total number of base stations, the number of the second base stations is 1 and FA of every base station is determined with the first frequency resource(260).
Abstract translation: 目的：提供一种在移动通信系统中分配基站的频率资源的方法，通过控制提供具有相同质量的服务所需的每个基站的频率资源来计算最小数量的频率资源。 规定：计算某一服务区域的所需流量的总量（T）（200）。 输入特定服务区的基站的总数（Bn）为1FA的基站无线电容量（B1）（205）。 计算第一频率资源的数量（210）。 将第一基站的数量（Bn1）的初始值设定为与基站总数（Bn）相同（215）。 计算剩余流量（225）。 确定剩余流量是否小于0（230）。 如果剩余流量不小于0，则计算第二频率资源（235）。 确定第一频率资源的数量和第二频率资源的数量是否相同（240）。 如果它们相同，则确定第一基站的数量是否等于从基站总数（245）减去1得到的值。 如果第一基站的数量等于从基站总数减去1获得的值，则第二基站的数量为1，并且用第一频率资源（260）确定每个基站的FA， 。
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公开(公告)号：KR1020030079746A
公开(公告)日：2003-10-10
申请号：KR1020030020541
申请日：2003-04-01
Applicant: 삼성전자주식회사
IPC: H01L21/66
CPC classification number: B29C45/768 , B29C45/02 , B29C45/462 , B29C2945/761 , B29C2945/76167 , B29C2945/76331 , B29C2945/76832 , Y10S53/90
Abstract: PURPOSE: A tablet detecting system of a molding tablet supply apparatus is provided to be capable of accurately detecting the size of a tablet and reducing the possibility of malfunction by using a mechanical contact method. CONSTITUTION: A tablet detecting system(100) is provided with a push bar(110) inserted in a storage hole and raised as much as the size of a tablet(12) stored in the storage hole, a contact part(112) made of conductive material, formed at the upper portion of the push bar, an insulating plate(120) installed at the upper portion of the contact part, a conductive pad(130) made of conductive material, formed at the lower portion of the insulating plate, and a controller(140) electrically connected to the conductive pad. At this time, the contact part is mechanically connected to the conductive pad by the tablet having a predetermined size.
Abstract translation: 目的：提供一种成型药片供给装置的片剂检测系统，能够通过机械接触方法精确地检测药片的尺寸并降低发生故障的可能性。 构成：片剂检测系统（100）设置有插入存储孔中的推杆（110），并且与存储在存储孔中的片剂（12）的尺寸一样升高;接触部分（112）由 导电材料，形成在推杆的上部，安装在接触部分的上部的绝缘板（120），形成在绝缘板的下部的由导电材料制成的导电垫（130） 以及电连接到所述导电焊盘的控制器（140）。 此时，接触部分通过具有预定尺寸的片剂机械连接到导电垫。
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Patent Agency Ranking
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公开(公告)号：KR101678888B1
公开(公告)日：2016-12-07
申请号：KR1020100076112
申请日：2010-08-06
Applicant: 삼성전자주식회사
CPC classification number: G11C11/5628 , G11C16/26 , G11C16/3418
Abstract: 본발명에따른비휘발성메모리장치의데이터판독방법은메모리셀 어레이내의제1페이지의복수의메모리셀의제1 독출레벨에의해판독되는단계; 상기제1페이지의복수의메모리셀에인접한제2페이지의복수의메모리셀의제2 독출레벨에의해판독되는단계; 상기판독된제2 독출레벨에따른제2페이지의복수의메모리셀의문턱전압값을검증하기위하여상기제1 독출레벨에따라상기제1페이지의메모리셀의상태변화가판단되는단계; 및상기판단된제1페이지의메모리셀의상태변화를통하여상기제2페이지의메모리셀들의상태가보정되는단계를포함한다.
Abstract translation: 一种在非易失性存储器件中读取数据的方法。 该方法包括使用第一读取级别读取存储单元阵列中的第一页的多个存储单元，使用第二读取级别读取与第一页的存储单元相邻的第二页的多个存储单元，确定 基于第一读取电平来改变第一页面的每个存储器单元的状态，以基于第二读取电平来验证第二页的每个存储单元的阈值电压，并且修改第二页的每个存储器单元的状态 第二页根据确定的结果。
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公开(公告)号：KR101679840B1
公开(公告)日：2016-11-25
申请号：KR1020080070071
申请日：2008-07-18
Applicant: 삼성전자주식회사
CPC classification number: F24F11/30 , F24F2110/10 , F24F2110/20
Abstract: 본발명은공기조화기의제어방법에관한것으로, 특히본 발명은공조공간의불쾌지수가목표불쾌지수에도달할때의공조공간의온도또는온도대역에따라목표불쾌지수를조정하여냉방운전을제어함으로써사용자의쾌적감을해치지않는범위내에서불필요한냉방운전등을방지할수 있어소비전력을절약할수 있다.
Abstract translation: 本文公开了一种空调机的控制方法，其能够通过在空调空间的不适指数达到目标不适时根据空调空间的温度或温度带调节目标不适指数来控制冷却操作 指标，从而防止在不影响用户舒适度的范围内执行不必要的制冷操作，从而降低功耗。
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公开(公告)号：KR101518199B1
公开(公告)日：2015-05-06
申请号：KR1020080048264
申请日：2008-05-23
Applicant: 삼성전자주식회사
Abstract: 오류 정정 장치, 그 방법 및 상기 장치를 포함하는 메모리 장치가 제공된다. 본 발명의 에러 정정 장치는 멀티 레벨 셀(MLC, Multi-Level Cell)로부터 독출된 판독 워드가 오류 정정 능력 범위에 존재하는 지를 판단하는 판단부, 상기 판독 워드가 상기 오류 정정 능력 범위에 존재하지 아니한 경우에 상기 멀티 레벨 셀에 인가하는 판독 전압을 증감시키는 판독 전압 제어부, 및 상기 판독 전압의 증감에 따른 비트 에러를 분석하고, 상기 분석된 비트 에러에 대응하여, 선정된 판독 에러 패턴을 기반으로 코드 워드를 선택하는 코드 워드 결정부를 포함할 수 있고, 이를 통해 메모리 장치의 데이터를 장기간 유지하였을 경우 발생할 수 있는 판독 에러를 효율적으로 정정할 수 있다.
멀티 비트 셀, 멀티 레벨 셀, 측면 전계, 측면 전하 이동, 전하 트랩형 플래시Abstract translation: 提供了一种纠错装置，其方法以及包括该装置的存储装置。 本发明的错误校正装置包括：确定单元，用于确定从多级单元（MLC）读取的读取字是否存在于错误校正能力范围内;确定单元，用于确定读取字是否存在于错误校正能力范围内 等级单元;以及读取电压控制单元，用于增大或减小要施加到多级单元的读取电压，并且分析由读取电压的增加或减少引起的位误差， 以及用于选择单词的代码字确定单元，由此有效地校正当存储器装置的数据被长时间保存时可能发生的读取错误。
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公开(公告)号：KR101506655B1
公开(公告)日：2015-03-30
申请号：KR1020080044964
申请日：2008-05-15
Applicant: 삼성전자주식회사
CPC classification number: G11C16/10 , G06F11/1072 , G11C11/5628 , G11C11/5642 , G11C16/3454 , G11C29/00 , G11C2211/5621 , G11C2211/5634
Abstract: 메모리 장치 및 메모리 데이터 오류 관리 방법이 제공된다. 메모리 장치는 메모리 셀들로부터 읽은 데이터의 오류 비트를 검출 및 정정하고, 상기 검출된 오류 비트가 저장된 메모리 셀을 식별한다. 메모리 장치는 상기 식별된 메모리 셀에 상기 정정된 비트에 대응하는 검증 전압을 할당하고, 나머지 메모리 셀에 상기 읽은 데이터에 대응하는 검증 전압을 할당한다. 메모리 장치는 할당된 검증 전압을 이용하여 메모리 셀들에 저장된 데이터를 재조정한다. 이를 통해 메모리 장치의 데이터의 유지(retention) 기간을 늘일 수 있다.
멀티 비트 셀, 멀티 레벨 셀, ECC, Error Control Coding, charge loss
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