公开(公告)号：WO2011162950A2

公开(公告)日：2011-12-29

申请号：PCT/US2011/039564

申请日：2011-06-08

Applicant: INTERNATIONAL BUSINESS MACHINE CORPORATION ,  HERRIN, Russell, T. ,  JAHNES, Christopher, V. ,  STAMPER, Anthony, K. ,  WHITE, Eric, J.

Inventor： HERRIN, Russell, T. ,  JAHNES, Christopher, V. ,  STAMPER, Anthony, K. ,  WHITE, Eric, J.

IPC: B81C1/00 ,  B81B3/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity (60b) includes forming a first sacrificial cavity layer (18) over a wiring layer (14) and substrate (10). The method further includes forming an insulator layer (40) over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity (60b) of the MEMS.

Abstract translation: 形成至少一个微机电系统（MEMS）腔（60b）的方法包括在布线层（14）和衬底（10）上形成第一牺牲腔层（18）。 该方法还包括在第一牺牲腔层上形成绝缘体层（40）。 该方法还包括在绝缘体层上执行反向镶嵌回蚀工艺。 该方法还包括平坦化绝缘体层和第一牺牲腔层。 该方法还包括将第一牺牲腔层排出或剥离到用于MEMS的第一腔（60b）的平坦表面。

公开(公告)号：WO2011160985A2

公开(公告)日：2011-12-29

申请号：PCT/EP2011/059880

申请日：2011-06-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  STAMPER, Anthony ,  JAHNES, Christopher, Vincent

Inventor： STAMPER, Anthony ,  JAHNES, Christopher, Vincent

IPC: B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

Abstract translation: 形成微机电系统（MEMS）的方法包括在MEMS的空腔内的第一绝缘体层上形成下电极。 该方法还包括在下部电极的顶部上形成上部电极，该上部电极至少部分地与下部电极接触。 下电极和上电极的形成包括调节下电极和上电极的金属体积以改变光束弯曲。

公开(公告)号：US11952266B2

公开(公告)日：2024-04-09

申请号：US17066448

申请日：2020-10-08

Applicant: X-Celeprint Limited

Inventor： Pierluigi Rubino

IPC: B81C1/00

CPC classification number: B81C1/00039 ,  B81C1/00523 ,  B81C1/00555 ,  B81C2201/0105 ,  B81C2201/013

Abstract: A micro-device structure comprises a source substrate having a sacrificial layer comprising a sacrificial portion adjacent to an anchor portion, a micro-device disposed completely over the sacrificial portion, the micro-device having a top side opposite the sacrificial portion and a bottom side adjacent to the sacrificial portion and comprising an etch hole that extends through the micro-device from the top side to the bottom side, and a tether that physically connects the micro-device to the anchor portion. A micro-device structure comprises a micro-device disposed on a target substrate. Micro-devices can be any one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.

公开(公告)号：US20240109770A1

公开(公告)日：2024-04-04

申请号：US17936931

申请日：2022-09-30

Applicant: Knowles Electronics, LLC

Inventor： Peter V. Loeppert ,  Michael Pedersen

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0163 ,  B81B2203/0307 ,  B81C2201/013 ,  B81C2201/017

Abstract: A method of fabricating a die for a microelectromechanical systems (MEMS) microphone includes the steps of forming a diaphragm, etching a plurality of slots through the diaphragm to define a plurality of springs, releasing the diaphragm and the plurality of springs, wherein the plurality of springs relieves intrinsic stress of the diaphragm, and sealing the plurality of slots with sealing material, thereby disabling the springs.

公开(公告)号：US11906727B2

公开(公告)日：2024-02-20

申请号：US16761294

申请日：2018-08-02

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsuya Sugimoto ,  Tomofumi Suzuki ,  Kyosuke Kotani ,  Yutaka Kuramoto ,  Daiki Suzuki

IPC: B81C1/00 ,  G02B26/10 ,  G02B7/182 ,  G02B26/08 ,  H02N1/00

CPC classification number: G02B26/0841 ,  B81C1/00555 ,  G02B7/1821 ,  G02B26/105 ,  H02N1/008 ,  B81B2201/042 ,  B81C2201/013 ,  B81C2201/0174 ,  B81C2201/0198

Abstract: A method for manufacturing an optical device includes: preparing a semiconductor substrate that includes a portion corresponding to a base, a movable unit, and an elastic support portion; forming a first resist layer in a region corresponding to the base on a surface of a first semiconductor layer which is opposite to an insulating layer; forming a depression in the first semiconductor layer by etching the first semiconductor layer using the first resist layer as a mask; forming a second resist layer in a region corresponding to a rib portion on a bottom surface of the depression, a side surface of the depression, and the surface of the first semiconductor layer which is opposite to the insulating layer; and forming the rib portion by etching the first semiconductor layer until reaching the insulating layer using the second resist layer as a mask.

公开(公告)号：US11905167B2

公开(公告)日：2024-02-20

申请号：US17932409

申请日：2022-09-15

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein ,  Evangelos Angelopoulos ,  Stefan Barzen ,  Marc Fueldner ,  Stefan Geissler ,  Matthias Friedrich Herrmann ,  Ulrich Krumbein ,  Konstantin Tkachuk ,  Giordano Tosolini ,  Juergen Wagner

IPC: B81C1/00 ,  B81B3/00 ,  B81B7/02 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B7/02 ,  B81C1/00103 ,  H04R1/08 ,  H04R7/02 ,  H04R7/08 ,  H04R31/003 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0384 ,  B81C2201/013 ,  H04R2201/003

Abstract: A microfabricated structure includes a perforated stator; a first isolation layer on a first surface of the perforated stator; a second isolation layer on a second surface of the perforated stator; a first membrane on the first isolation layer; a second membrane on the second isolation layer; and a pillar coupled between the first membrane and the second membrane, wherein the first isolation layer includes a first tapered edge portion having a common surface with the first membrane, wherein the second isolation layer includes a first tapered edge portion having a common surface with the second membrane, and wherein an endpoint of the first tapered edge portion of the first isolation layer is laterally offset with respect to an endpoint of the first tapered edge portion of the second isolation layer.

公开(公告)号：US20230406698A1

公开(公告)日：2023-12-21

申请号：US18333924

申请日：2023-06-13

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Altti TORKKELI ,  Jussi OKSANEN ,  Aarni HÄRKÖNEN ,  Juha LAHDENPERÄ

IPC: B81C3/00 ,  B81B7/02

CPC classification number: B81C3/001 ,  B81B7/02 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2203/0361 ,  B81B2207/094 ,  B81C2201/0147 ,  B81C2203/031 ,  B81C2201/013 ,  B81C2201/0156 ,  B81B2203/04

Abstract: A microelectromechanical element is provided with patterned regions of wafer material and glass material. The regions of glass material include at least a first glass region and a second glass region formed of a first glass material and a second glass material, respectively. The first glass material enables anodic bonding with the wafer material. An alkali metal content of the second glass material is less than an alkali metal content of the first glass material.

公开(公告)号：US11845401B2

公开(公告)日：2023-12-19

申请号：US17100344

申请日：2020-11-20

Applicant: HYUNDAI MOTOR COMPANY ,  KIA MOTORS CORPORATION ,  Korea Polytechnic University Industry Academic Cooperation Foundation

Inventor： Ji Hyun Woo ,  Chang-Kyu Kim

IPC: B60R25/40 ,  H02N1/08 ,  B81B3/00 ,  B81C1/00 ,  B60R25/24

CPC classification number: B60R25/406 ,  B60R25/24 ,  B81B3/0021 ,  B81C1/00166 ,  H02N1/08 ,  B81B2203/0136 ,  B81B2203/04 ,  B81C2201/013

Abstract: A vehicle key capable of generating electrical energy by itself through energy harvesting, and a method of manufacturing the vehicle key are provided. The vehicle key includes a power generator including an energy generation module configured to generate electrical energy using energy harvesting and an electric condenser configured to store the generated electrical energy; an inputter configured to receive a user input; a communicator configured to communicate with the vehicle; and a controller configured to control the communicator to transmit a control signal corresponding to the received user input to the vehicle. At least one of the inputter, the communicator, and the controller may be configured to receive power from the power generator.

公开(公告)号：US20230375416A1

公开(公告)日：2023-11-23

申请号：US18228333

申请日：2023-07-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsai-Hao HUNG ,  Shih-Chi KUO

IPC: G01K7/32 ,  B81C1/00 ,  B81B3/00

CPC classification number: G01K7/32 ,  B81C1/00944 ,  B81B3/0008 ,  B81B2203/0136 ,  B81C2201/0105 ,  B81C2201/013 ,  B81C2201/0116 ,  B81B2201/0278 ,  B81B2203/04

Abstract: The structure of a micro-electro-mechanical system (MEMS) thermal sensor and a method of fabricating the MEMS thermal sensor are disclosed. A method of fabricating a MEMS thermal sensor includes forming first and second sensing electrodes with first and second electrode fingers, respectively, on a substrate and forming a patterned layer with a rectangular cross-section between a pair of the first electrode fingers. The first and second electrode fingers are formed in an interdigitated configuration and suspended above the substrate. The method further includes modifying the patterned layer to have a curved cross-section between the pair of the first electrode fingers, forming a curved sensing element on the modified patterned layer to couple to the pair of the first electrodes, and removing the modified patterned layer.

公开(公告)号：US20230365402A1

公开(公告)日：2023-11-16

申请号：US18354012

申请日：2023-07-18

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Hang Chang ,  I-Shi Wang ,  Jen-Hao Liu

IPC: B81C1/00 ,  B81C3/00

CPC classification number: B81C1/00238 ,  B81C1/00269 ,  B81C1/00888 ,  B81C3/005 ,  B81C2201/013 ,  B81C2201/0143 ,  B81C2201/0146 ,  B81C2203/035

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first substrate including a first face and a second face opposite the first face. A second substrate is bonded to the first face of the first substrate such that the second face of the first substrate faces away from the second substrate. One or more recesses are arranged in the second face of the first substrate and are configured to compensate for thermal expansion or thermal contraction.