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    Technique for manufacturing micro-electro mechanical structures
    175.
    发明授权
    Technique for manufacturing micro-electro mechanical structures 有权
    微机电结构制造技术

    公开(公告)号：US07214324B2

    公开(公告)日：2007-05-08

    申请号：US11107083

    申请日：2005-04-15

    Applicant: Dan W. Chilcott

    Inventor： Dan W. Chilcott

    IPC: C23F1/00

    CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0315 ,  B81B2203/0338 ,  B81C2201/0135 ,  B81C2201/014 ,  B81C2201/017

    Abstract: A technique for manufacturing a micro-electro mechanical structure includes a number of steps. Initially, a cavity is formed into a first side of a handling wafer, with a sidewall of the cavity forming a first angle greater than about 54.7 degrees with respect to a first side of the handling wafer at an opening of the cavity. Then, a bulk etch is performed on the first side of the handling wafer to modify the sidewall of the cavity to a second angle greater than about 90 degrees, with respect to the first side of the handling wafer at the opening of the cavity. Next, a second side of a second wafer is bonded to the first side of the handling wafer.

    Abstract translation: 微电子机械结构的制造技术包括多个步骤。 最初，空腔形成处理晶片的第一侧，空腔的侧壁在空腔的开口处相对于处理晶片的第一侧形成大于约54.7度的第一角度。 然后，在处理晶片的第一侧上执行体蚀刻，以将空腔的侧壁相对于处理晶片在空腔开口处的第一侧大于约90度的第二角度进行修改。 接下来，将第二晶片的第二面接合到处理晶片的第一侧。

    Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof
    176.
    发明授权
    Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof 有权
    用于沉积适合微加工的多晶SiGe的方法及其获得的器件

    公开(公告)号：US07176111B2

    公开(公告)日：2007-02-13

    申请号：US10263623

    申请日：2002-10-03

    Applicant: Kris Baert ,  Matty Caymax ,  Cristina Rusu ,  Sherif Sedky ,  Ann Witvrouw

    Inventor： Kris Baert ,  Matty Caymax ,  Cristina Rusu ,  Sherif Sedky ,  Ann Witvrouw

    IPC: H01L21/20 ,  H01L21/36

    CPC classification number: H01L31/1804 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/017 ,  C23C16/22 ,  G01J5/20 ,  H01L31/09 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Method and apparatus to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers may be used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SixGe1−x layer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters may be used.

    Abstract translation: 获得沉积的多晶和低应力SiGe层的方法和装置。 这些层可以用于微机电系统（MEMS）装置或微加工结构中。 分析影响多晶层中的应力的不同参数。 参数包括但不限于：沉积温度; 半导体的浓度（例如，硅和锗在Si 1 x 1-x层中的浓度，x是浓度参数）; 掺杂剂的浓度（例如硼或磷的浓度）; 压力量; 并使用等离子体。 取决于多晶SiGe生长的特定环境，可以使用不同的参数值。

    Method of fabrication of an infrared radiation detector and infrared detector device
    177.
    发明授权
    Method of fabrication of an infrared radiation detector and infrared detector device 有权
    制造红外辐射探测器和红外探测器的方法

    公开(公告)号：US06884636B2

    公开(公告)日：2005-04-26

    申请号：US09861334

    申请日：2001-05-18

    Applicant: Paolo Fiorini ,  Sherif Sedky ,  Matty Caymax ,  Christiaan Baert

    Inventor： Paolo Fiorini ,  Sherif Sedky ,  Matty Caymax ,  Christiaan Baert

    IPC: G01J1/02 ,  B81B3/00 ,  B81C1/00 ,  G01J5/20 ,  H01L31/0248 ,  H01L31/09 ,  H01L31/18 ,  G01R31/26 ,  H01L21/66

    CPC classification number: B81C1/00666 ,  B81C2201/017 ,  G01J5/20 ,  H01L31/09 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

    Abstract translation: 公开了一种制造红外检测器的方法，一种控制多晶SiGE层中的应力的方法和一种红外检测器件。 制造方法包括以下步骤：在衬底上形成牺牲层; 图案化所述牺牲层; 在所述牺牲层上建立基本上由多晶SiGe组成的层; 在所述多晶SiGe层上沉积红外吸收剂; 然后除去牺牲层。 沉积在衬底上的多晶SiGe层中控制应力的方法是基于沉积压力的变化。 红外检测器装置包括有源区和红外吸收体，其中有源区包括多晶SiGe层，并悬浮在衬底上。

    Method of manufacturing an air bridge type structure for supporting a micro-structure
    180.
    发明授权
    Method of manufacturing an air bridge type structure for supporting a micro-structure 失效
    制造用于支撑微结构的气桥式结构的方法

    公开(公告)号：US6013573A

    公开(公告)日：2000-01-11

    申请号：US804407

    申请日：1997-02-21

    Applicant: Takayuki Yagi

    Inventor： Takayuki Yagi

    IPC: G01B7/34 ,  B81B1/00 ,  B81B3/00 ,  B81C1/00 ,  B81C3/00 ,  G01B7/00 ,  G01B21/30 ,  G01N37/00 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q70/10 ,  G01Q70/16 ,  G02B21/00 ,  G11B9/14 ,  H01L21/764 ,  H01L29/84

    CPC classification number: B81C1/00142 ,  H01L21/764 ,  B81C2201/017 ,  B81C2201/0191

    Abstract: An air bridge type structure of a bridge shape which joins to a substrate or micro-structure is manufactured by forming an air bridge type structure on a first substrate and transferring the air bridge type structure to a second substrate and/or a micro-structure formed on the second substrate. A mold substrate, comprising a recessed portion provided on the surface of the mold substrate and a peeling layer formed on the recessed portion, is used for formation of the air bridge type structure. A micro-structure can be supported by the air bridge type structure, for example, a probe for detecting tunneling current or micro-force, supported by the air bridge type structure. Accordingly, electrical connection between structures and the substrate or between the structures one to another can be performed, even if there is undercutting underneath the structures. Film stress generated upon formation of air bridge type structures can be avoided, and increasing of productivity and lowering of costs can be simultaneously achieved.

    Abstract translation: 通过在第一基板上形成空气桥型结构并将空气桥型结构转移到形成的第二基板和/或微结构来制造与基板或微结构连接的桥接形状的气桥式结构 在第二基板上。 模具基板包括设置在模具基板的表面上的凹部和形成在凹部上的剥离层，用于形成气桥式结构。 微型结构可以由气桥式结构支撑，例如用于检测由气桥式结构支撑的隧道电流或微力的探针。 因此，即使结构下面存在底切，也可以执行结构与基板之间或结构之间的电连接。 可以避免在形成气桥式结构时产生的薄膜应力，同时可以实现生产率的提高和成本的降低。

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