中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

366 records (took 0.029 seconds)

    METHOD AND APPARATUS FOR GROWING A THIN FILM ONTO A SUBSTRATE
    182.
    发明申请
    METHOD AND APPARATUS FOR GROWING A THIN FILM ONTO A SUBSTRATE 审中-公开
    用于将薄膜生长到基底上的方法和装置

    公开(公告)号：WO2010123666A2

    公开(公告)日：2010-10-28

    申请号：PCT/US2010/029558

    申请日：2010-04-01

    Applicant: ASM AMERICA, INC.

    Inventor： WHITE, Carl, L. ,  SHERO, Eric, J. ,  PEUSSA, Marko

    IPC: H01L21/205 ,  C23C16/455

    CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/45561

    Abstract: An apparatus and method of growing a thin film onto a substrate comprises placing a substrate in a reaction chamber and subjecting the substrate to surface reactions of a plurality of vapor-phase reactants according to the ALD method. Non-fully closing valves are placed into the reactant feed conduit and backsuction conduit of an ALD system. The non-fully closed valves are operated such that one valve is open and the other valve is closed during the purge or pulse cycle of the ALD process.

    Abstract translation: 将薄膜生长到基板上的装置和方法包括将基板放置在反应室中，并使基板根据ALD方法对多个气相反应物进行表面反应。 非完全关闭阀被放置在ALD系统的反应物进料导管和反向导管中。 操作非完全关闭的阀门，使得一个阀门打开，另一个阀门在ALD过程的清洗或脉冲循环期间关闭。

    SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF
    183.
    发明申请
    SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF 审中-公开

    公开(公告)号：WO2010118051A3

    公开(公告)日：2010-10-14

    申请号：PCT/US2010/030126

    申请日：2010-04-06

    Applicant: ASM AMERICA, INC. ,  SHERO, Eric ,  VERGHESE, Mohith ,  WHITE, Carl ,  TERHORST, Herbert ,  MAURICE, Dan

    Inventor： SHERO, Eric ,  VERGHESE, Mohith ,  WHITE, Carl ,  TERHORST, Herbert ,  MAURICE, Dan

    IPC: C23C16/455

    Abstract: A reactor having a housing that encloses a gas delivery system (14) operatively connected to a reaction chamber (16) and an exhaust assembly (18). The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer (20) for receiving the at least one process gas. The mixer is operatively connected to a diffuser (22) that is configured to diffuse process gases. The diffuser is attached directly to an upper surface (24) of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber. The reaction chamber defines a reaction space in which a semiconductor substrate is disposed for processing. The exhaust assembly is operatively connected to the reaction chamber for withdrawing unreacted process gases and effluent from the reaction space.

    SELF-CENTERING SUSCEPTOR RING ASSEMBLY
    184.
    发明申请
    SELF-CENTERING SUSCEPTOR RING ASSEMBLY 审中-公开
    自行设计的SUSCEPTOR环组件

    公开(公告)号：WO2010062476A1

    公开(公告)日：2010-06-03

    申请号：PCT/US2009/059501

    申请日：2009-10-05

    Applicant: ASM AMERICA, INC.

    Inventor： AGGARWAL, Ravinder ,  HARU, Robert, C.

    IPC: H01L21/683 ,  H01L21/687

    CPC classification number: H01L21/68785 ,  H01L21/67103 ,  H01L21/6875 ,  H05B6/105

    Abstract: A self-centering susceptor ring assembly is provided. The susceptor ring assembly includes a susceptor ring support member and a susceptor ring supported on the susceptor ring support member. The susceptor ring support member includes at least three pins extending upwardly relative to the lower inner surface of the reaction chamber. The susceptor ring includes at least three detents formed in a bottom surface to receive the pins from the susceptor ring support member. The detents are configured to allow the pins to slide therewithin while the susceptor ring thermally expands and contracts, wherein the detents are sized and shaped such that as the susceptor ring thermally expands and contracts the gap between the susceptor ring and the susceptor located within the aperture of the susceptor ring remains substantially uniform about the entire circumference of the susceptor, and thereby maintains the same center axis.

    Abstract translation: 提供了一个自定心的基座环组件。 基座环组件包括基座环支撑构件和支撑在基座环支撑构件上的基座环。 基座环支撑构件包括相对于反应室的下内表面向上延伸的至少三个销。 基座环包括形成在底表面中的至少三个棘爪，以从基座环支撑构件接收销。 棘爪构造成允许销在其中滑动，同时基座环热膨胀和收缩，其中棘爪的尺寸和形状使得当基座环热膨胀并收缩基座环和位于孔内的基座之间的间隙时 基座环围绕基座的整个圆周保持基本均匀，从而维持相同的中心轴线。

    SUBSTRATE HOLDER WITH VARYING DENSITY
    186.
    发明申请
    SUBSTRATE HOLDER WITH VARYING DENSITY 审中-公开
    具有不同密度的基座

    公开(公告)号：WO2010053648A2

    公开(公告)日：2010-05-14

    申请号：PCT/US2009/059497

    申请日：2009-10-05

    Applicant: ASM AMERICA, INC.

    Inventor： GIVENS, Michael ,  HALPIN, Mike ,  GOODMAN, Matthew, G. ,  KOSCO, Keir

    IPC: H01L21/683 ,  H01L21/687 ,  H01L21/205

    CPC classification number: H01L21/68735 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/68785

    Abstract: A substrate support system comprises a substrate holder for supporting a substrate. The substrate holder comprises an interior portion sized and shaped to extend beneath most or all of a substrate supported on the substrate holder. The substrate holder has mass density that varies, preferably in order to compensate for variations in substrate temperature owing to surface geometry variations of the interior portion, so as to provide a more uniform thermal coupling between the substrate and substrate holder. The substrate holder is preferably configured to be spaced further apart from a substrate at the center than at the outer perimeter.

    Abstract translation: 衬底支撑系统包括用于支撑衬底的衬底支架。 衬底保持器包括尺寸和形状以在支撑在衬底保持器上的基底的大部分或全部下延伸的内部部分。 衬底保持器具有变化的质量密度，优选地为了补偿由于内部部分的表面几何形状变化引起的衬底温度的变化，从而在衬底和衬底保持器之间提供更均匀的热耦合。 衬底保持器优选地构造成在中心处比在外周距离衬底更远地分开。

    THERMOCOUPLE
    187.
    发明申请
    THERMOCOUPLE 审中-公开
    热电偶

    公开(公告)号：WO2009154896A1

    公开(公告)日：2009-12-23

    申请号：PCT/US2009/043454

    申请日：2009-05-11

    Applicant: ASM AMERICA, INC. ,  YEDNAK, Andy, Michael

    Inventor： YEDNAK, Andy, Michael

    IPC: G01K7/18 ,  H01L21/66

    CPC classification number: G01K7/04 ,  G01K13/00

    Abstract: A thermocouple for use in a semiconductor processing reactor is described. The thermocouple includes a sheath having a measuring tip at one end and an opening at the other end. A support member having bores formed along the length is disposed within the sheath. A pair of wires formed of dissimilar metals are disposed within the bores, and one end of the wires is fused together to form a junction. The wires extend along the length of the bores. As the wires exit the bore, they are spatially or physically separated to prevent a short circuit therebetween. The ends of the wires exiting the bore are also free to thermally expand in the longitudinal manner, thereby reducing or eliminating the potential for the wires to fail due to grain slip.

    Abstract translation: 描述了用于半导体处理反应器的热电偶。 热电偶包括在一端具有测量头和在另一端具有开口的护套。 具有沿着长度形成的孔的支撑构件设置在护套内。 由异种金属形成的一对线材设置在孔内，并且电线的一端熔合在一起以形成接合部。 电线沿着孔的长度延伸。 当导线离开孔时，它们在空间上或物理上分开以防止它们之间的短路。 离开孔的线的端部也可以以纵向方式自由地热膨胀，从而减少或消除由于谷物滑动导致电线失效的可能性。

    THERMOCOUPLE
    189.
    发明申请
    THERMOCOUPLE 审中-公开
    热电偶

    公开(公告)号：WO2009029532A2

    公开(公告)日：2009-03-05

    申请号：PCT/US2008/074063

    申请日：2008-08-22

    Applicant: ASM AMERICA, INC. ,  HALPIN, Mike ,  GOODMAN, Matt

    Inventor： HALPIN, Mike ,  GOODMAN, Matt

    IPC: C23C14/54 ,  G01K1/08 ,  G01K7/02 ,  H01L21/20

    CPC classification number: G01K7/04 ,  G05D23/1931 ,  G05D23/22

    Abstract: A thermocouple for measuring temperature at a position adjacent to a substrate being processed in a chemical vapor deposition reactor is provided. The thermocouple includes a sheath having a measuring tip. The thermocouple also includes a support tube disposed within the sheath. The thermocouple further includes first and second wires supported by the support tube. The first and second wires are formed of different metals. A junction is formed between the first and second wires, wherein the junction is located adjacent to a distal end of the support tube. A spring is disposed about a portion of the support tube. The spring is compressed to exert a spring force on the support tube to bias the junction against the measuring tip to maintain the junction in continuous contact with the measuring tip. The spring force is small enough to prevent significant deformation of the junction as well as reducing variation of spring force or junction location from one thermocouple to another.

    Abstract translation: 提供了一种用于在化学气相沉积反应器中处理的衬底附近的位置处测量温度的热电偶。 热电偶包括具有测量尖端的护套。 热电偶还包括设置在护套内的支撑管。 热电偶还包括由支撑管支撑的第一和第二线。 第一和第二导线由不同的金属形成。 在第一和第二线之间形成接头，其中接合部位于支撑管的远端附近。 围绕支撑管的一部分设置弹簧。 弹簧被压缩以在支撑管上施加弹簧力以将接合部偏压到测量尖端，以保持接合部与测量尖端连续接触。 弹簧力足够小以防止接头的显着变形，以及减少弹簧力或结合位置从一个热电偶到另一个热电偶的变化。

    VAPOR DEPOSITION OF METAL CARBIDE FILMS
    190.
    发明申请
    VAPOR DEPOSITION OF METAL CARBIDE FILMS 审中-公开
    金属碳膜的蒸气沉积

    公开(公告)号：WO2008057749A1

    公开(公告)日：2008-05-15

    申请号：PCT/US2007/082131

    申请日：2007-10-22

    Applicant: ASM AMERICA, INC. ,  ELERS, Kai-Erik

    Inventor： ELERS, Kai-Erik

    IPC: C23C16/32 ,  C23C16/455

    CPC classification number: C23C16/32 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45542

    Abstract: Methods of forming metal carbide thin films are provided. According to preferred embodiments, metal carbide thin films are formed in an atomic layer deposition (ALD) process by alternately and sequentially contacting a substrate in a reaction space with spatially and temporally separated vapor phase pulses of a metal source chemical, a reducing agent and a carbon source chemical. The reducing agent is preferably selected from the group consisting of excited species of hydrogen and silicon-containing compounds.

    Abstract translation: 提供了形成金属碳化物薄膜的方法。 根据优选实施例，通过交替地和顺序地将反应空间中的衬底与金属源化学品，还原剂和还原剂的空间和时间分离的气相脉冲交替地和顺序地接触，在原子层沉积（ALD）工艺中形成金属碳化物薄膜 碳源化学品。 还原剂优选选自氢和含硅化合物的激发物质。

Patent Agency Ranking