公开(公告)号：EP4336545A1

公开(公告)日：2024-03-13

申请号：EP23185154.4

申请日：2023-07-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： ABOU-KHALIL, Michel ,  SHANK, Steven M. ,  MCTAGGART, Sarah ,  VALLETT, Aaron ,  KRISHNASAMY, Rajendran ,  LYDON-NUHFER, Megan

IPC: H01L21/76 ,  H01L27/04 ,  H01L29/10 ,  H01L21/762 ,  H01L21/763

Abstract: Semiconductor device structures with device isolation and methods of forming a semiconductor device structure with device isolation. The structure comprises a semiconductor substrate, a first semiconductor layer on the semiconductor substrate, a second semiconductor layer in a cavity in the first semiconductor layer, and a device structure including a doped region in the second semiconductor layer. The first semiconductor layer comprises a porous semiconductor material, and the second semiconductor layer comprises a single-crystal semiconductor material.

公开(公告)号：EP4287262A1

公开(公告)日：2023-12-06

申请号：EP22201887.1

申请日：2022-10-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： BAARS, Peter ,  ONTALUS, Viorel ,  TAILOR, Ketankumar H. ,  ZIER, Michael ,  KENNEY, Crystal R. ,  HOLT, Judson

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/737 ,  H01L21/331 ,  H01L21/762 ,  H01L27/06 ,  H01L27/12

Abstract: A structure comprising: a semiconductor substrate including a trench; a first semiconductor layer including a portion adjacent to the trench; a dielectric layer between the first semiconductor layer and the semiconductor substrate, the dielectric layer having an interface with the first semiconductor layer; a second semiconductor layer in the trench, the second semiconductor layer including a first portion that is recessed relative to the interface; and a vertical heterojunction bipolar transistor including a collector in the first portion of the second semiconductor layer.

公开(公告)号：EP4243083A1

公开(公告)日：2023-09-13

申请号：EP22205703.6

申请日：2022-11-07

Applicant: GlobalFoundries U.S. Inc.

Inventor： BAARS, PETER ,  DERRICKSON, ALEXANDER M. ,  TAILOR, KETANKUMAR HARISHBHAI ,  ZHAO, ZHIXING ,  HOLT, JUDSON R.

IPC: H01L29/73 ,  H01L29/735 ,  H01L29/10 ,  H01L29/06 ,  H01L21/331 ,  H01L29/423

Abstract: A bipolar transistor structure comprising, a first emitter/collector layer on an insulator layer; a base layer over the insulator layer; and a spacer on the first emitter/collector layer, wherein the base layer includes a lower base region, wherein the spacer is adjacent to the lower base region and the first emitter/collector layer, and an upper base region on the lower base region and the spacer, wherein a horizontal width of the upper base region is larger than a horizontal width of the lower base region.

公开(公告)号：EP4243056A1

公开(公告)日：2023-09-13

申请号：EP22201123.1

申请日：2022-10-12

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yu, Hong ,  Holt, Judson R. ,  Jain, Vibhor

IPC: H01L21/331 ,  H01L29/737 ,  H01L29/10 ,  H01L29/73 ,  H01L29/735

Abstract: A lateral bipolar transistor (10) on an SOI substrate (12a, 12b, 12c) comprising: a base (16) formed within the semiconductor substrate (12c); a thermal conductive material (12d') under the base and extending to an underlying semiconductor material (15); an emitter (22) on a first side of the base (16); and a collector (24) on a second side of the base (16).

公开(公告)号：EP4235243A1

公开(公告)日：2023-08-30

申请号：EP22200133.1

申请日：2022-10-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Dixit, Hemant ,  Bian, Yusheng ,  Letavic, Theodore

IPC: G02B6/42 ,  G02B6/12 ,  H01L23/367 ,  G02B6/30

Abstract: Structures including an optical component and methods of fabricating a structure including an optical component. The structure includes a waveguide core and a back-end-of-line stack including a first metallization level, a second metallization level, and a heat sink having a metal feature in the second metallization level. The heat sink is positioned adjacent to a section of the waveguide core. The first metallization level including a dielectric layer positioned between the metal feature and the section of the waveguide core.

公开(公告)号：EP4227985A2

公开(公告)日：2023-08-16

申请号：EP22199712.5

申请日：2022-10-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Raghunathan, Uppili ,  Jain, Vibhor ,  Ventrone, Sebastian ,  Kantarovsky, Johnatan ,  Ngu, Yves

IPC: H01L21/762 ,  H01L21/763

Abstract: A structure comprising: a semiconductor substrate; a first isolation region in the semiconductor substrate, the first isolation region surrounding a portion of the semiconductor substrate; a device in the portion of the semiconductor substrate; and a second isolation region in the semiconductor substrate, the second isolation region surrounding the first isolation region and the portion of the semiconductor substrate.

公开(公告)号：EP4216280A1

公开(公告)日：2023-07-26

申请号：EP22199933.7

申请日：2022-10-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Pandey, Shesh Mani ,  Derrickson, Alexander M. ,  Holt, Judson R. ,  Jain, Vibhor

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/73 ,  H01L29/732 ,  H01L29/06 ,  H01L29/10

Abstract: A structure, in particular a vertical bipolar transistor, comprising: an intrinsic base region comprising doped semiconductor material (12c), preferably formed from an SOI layer; a collector region (22, 22a) confined within an insulator material (12b) beneath the doped semiconductor material (12c); an emitter region (28) above the intrinsic base region; and an extrinsic base (26) region above the intrinsic base region. Air gaps (24) may be present underneath the collector, which is typically formed in the buried oxide (12b) of an SOI substrate (12a, b, c).

公开(公告)号：EP4210088A1

公开(公告)日：2023-07-12

申请号：EP22197904.0

申请日：2022-09-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： HAZBUN, Ramsey ,  LEVY, Mark ,  Joseph, Alvin ,  ADUSUMILLI, Siva P.

IPC: H01L21/02 ,  H01L21/8258 ,  H01L27/085 ,  H01L29/06 ,  H01L29/20 ,  H01L29/78 ,  H01L29/778 ,  H01L27/088 ,  H01L21/336

Abstract: A structure comprising: a first semiconductor layer having a top surface and a faceted surface that fully surrounds the top surface, the top surface having a first surface normal, and the faceted surface having a second surface normal that is inclined relative to the first surface normal; a layer stack positioned on the faceted surface of the first semiconductor layer, the layer stack including a plurality of second semiconductor layers, and each second semiconductor layer comprised of a compound semiconductor material; a silicon-based device on the top surface of the first semiconductor layer; and a first compound-semiconductor-based device on the layer stack.

公开(公告)号：EP4203070A1

公开(公告)日：2023-06-28

申请号：EP22198330.7

申请日：2022-09-28

Applicant: GlobalFoundries U.S. Inc.

Inventor： KANTAROVSKY, JOHNATAN AVRAHAM

IPC: H01L29/778 ,  H01L29/41 ,  H01L21/338 ,  H01L29/417 ,  H01L29/423 ,  H01L29/20

Abstract: A transistor structure is provided, the transistor structure comprising a source (122), a drain (120), and a gate (126) between the source and the drain. The gate may have a top surface. A first field plate (118) is between the source and the drain. The first field plate is L-shaped and has a vertical portion over a horizontal portion. A top surface of the vertical portion of the first field plate is at least as high as the top surface of the gate. A second field plate (128) is connected to the gate and partially overlaps the horizontal portion of the first field plate.

公开(公告)号：EP4195287A1

公开(公告)日：2023-06-14

申请号：EP22205725.9

申请日：2022-11-07

Applicant: GlobalFoundries U.S. Inc.

Inventor： Levy, Mark.D ,  Krishnasamy, Rajendran ,  Zierak, Michael J. ,  Adusumilli, Siva P.

IPC: H01L29/417 ,  H01L29/732 ,  H01L29/78 ,  H01L29/06 ,  H01L23/367

Abstract: A structure, comprising, an electrical device, in particular a bipolar transistor (104) an active contact (130A, 130B) landed on a portion, the emitter (106), of the electrical device, the active contact including a first body (130A, 130B) of a first material and a thermal dissipation pillar (150) adjacent the active contact, the thermal dissipation pillar unlanded on, i.e. not electrically or mechanically connected to, but but over the portion (106) of the electrical device, the thermal dissipation pillar including a second body of a second material, for example Cu, having a higher thermal conductivity than the first material, for example W or Co. This is not merely applicable to the emitter but equally to the collector of a bipolar transistor, as well as to contacts of other electric devices like MOSFETs or polysilicon resistors.