Abstract:
A semiconductor accelerometer is formed by attaching a semiconductor layer to a handle wafer by a thick oxide layer. Accelerometer geometry is patterned in the semiconductor layer, which is then used as a mask to etch out a cavity in the underlying thick oxide. The mask may include one or more apertures, so that a mass region will have corresponding apertures to the underlying oxide layer. The structure resulting from an oxide etch has the intended accelerometer geometry of a large volume mass region supported in cantilever fashion by a plurality of piezo-resistive arm regions to a surrounding, supporting portion of the semiconductor layer. Directly beneath this accelerometer geometry is a flex-accommodating cavity realized by the removal of the underlying oxide layer. The semiconductor layer remains attached to the handle wafer by means of the thick oxide layer that surrounds the accelerometer geometry, and which was adequately masked by the surrounding portion of the top semiconductor layer during the oxide etch step. In a second embodiment support arm regions are dimensioned separately from the mass region, using a plurality of buried oxide regions as semiconductor etch stops.
Abstract in simplified Chinese:一种用于填充定义在晶圆基板之前侧表面之一或多个蚀刻洞的制程。制程包括步骤:(i)沉积热塑性第一聚合物层在该前侧表面上及进入每个洞;(ii)回焊该第一聚合物;(iii)以受控氧化等离子(oxidative plasma)曝光该晶圆基板;(iv)选择地重复步骤(i)至(iii);(v)沉积可光成像第二聚合物层;(vi)使用曝光和显影从该些洞周边外侧的区域选择性地去除该第二聚合物;以及(vii)平坦化该前侧表面以提供填充有包含彼此不同的该第一和第二聚合物之堵塞物的洞。每个堵塞物具有与该前侧表面共平面的相应的上表面。
Abstract in simplified Chinese:本发明提供化学-机械抛光组合物,其含有湿法二氧化硅、使镍-磷氧化之氧化剂、螯合剂、聚乙烯醇及水。本发明亦提供借由以下方式化学-机械抛光基板、尤其镍-磷基板之方法:使基板与抛光垫及该化学-机械抛光组合物接触,相对于该基板移动该抛光垫及该抛光组合物,且研磨该基板之至少一部分以抛光该基板。
Abstract in simplified Chinese:本发明大体而言系有关于一互补式金属氧化物半导体(CMOS)后段(BEOL)处理中一微机电系统悬臂式开关(cantilever switch)的形成。该悬臂式开关系经形成为与该结构中的下电极电气交流。该下电极可全覆沉积并图案化或仅沉积在下层结构的介层洞(via)或沟槽内。然后利用化学机械研磨或平坦化(CMP)处理将用于该下电极的过量材料平坦化。接下来在该平坦化的下电极上形成该悬臂式开关。
Abstract in simplified Chinese:一种中空结构体之制造方法,借由下述方式制造出中空结构体:准备包含有凹陷形状的下部结构体, 借由蒸镀聚合法,而在该下部结构体上沉积出由有机膜所构成的牺牲膜40,以该牺牲膜填埋该凹陷形状,去除该牺牲膜之不需要部分,在已去除不需要部分之该牺牲膜上形成上部结构体50,去除该牺牲膜,而在该下部结构体与该上部结构体之间形成空隙。
Abstract in simplified Chinese:本发明迅速埋设玻璃且抑制气泡。于硅基板本体51之主面形成凹部52。将玻璃基板54之第1主面叠合至硅基板本体51之主面而将凹部52予以密闭。加热玻璃基板54使其软化,而将玻璃基板54的一部分埋设于硅基板本体51的凹部52。冷却玻璃基板54。留下玻璃基板54之中埋设于硅基板本体51的凹部52的部分,去除其它部分。在将玻璃基板54的一部分埋设于硅基板本体51的凹部52时,形成有贯穿于凹部52内部与外部之间的贯穿孔53。
Abstract in simplified Chinese:一种薄化一芯片薄层至一预定厚度之方法,包含二薄化步骤,一第一薄化步骤及一第二薄化步骤;其中该第一薄化步骤为预备薄化步骤,而第二薄化步骤为最终薄化步骤,是以依此运行可使含硅结构达到薄化至预定之最终厚度。此种薄化层于一芯片中,例如可使用于一感应器而供用于一般尺寸、微型机械或甚至于奈米(毫微)级尺寸设备,而供电子–机械设备中特殊感应设备之用。