公开(公告)号：US20180212043A1

公开(公告)日：2018-07-26

申请号：US15327470

申请日：2016-12-29

Applicant: Wuhan China Star Optoelectronics Technology Co. Ltd.

Inventor： Tao Sun

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L29/66765 ,  B81C2201/0108 ,  G02F1/133345 ,  G02F1/136227 ,  G03F1/80 ,  G03F5/16 ,  G03F7/0035 ,  G03F7/0041 ,  G03F7/422 ,  G03F7/427 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/0274 ,  H01L21/205 ,  H01L21/2855 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/31058 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32 ,  H01L21/32134 ,  H01L21/32139 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/78603 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78669 ,  H01L2924/13069 ,  H05K2201/0338 ,  H05K2201/0361

Abstract: Disclosed is a method for manufacturing a thin film transistor. The method includes steps of etching a second metal layer and a semiconductor layer to form a boundary region of a thin film transistor; etching the second metal layer again to form a source, a drain and a back channel region of the thin film transistor; removing residual photoresist via an ashing procedure; and etching the semiconductor layer again to form a conductive channel of the thin film transistor. According to the method, the electric leakage problem of thin film transistor due to diffusion of copper and contamination of organic stripping liquid can be eliminated.

公开(公告)号：US20180148319A1

公开(公告)日：2018-05-31

申请号：US15879212

申请日：2018-01-24

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： John Charles Ehmke ,  Virgil Cotoco Ararao

IPC: B81B7/00

CPC classification number: B81B7/0038 ,  B81B2203/0315 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00293 ,  B81C2201/0108 ,  B81C2201/013 ,  B81C2201/0188 ,  B81C2201/0198 ,  B81C2201/053 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035 ,  B82Y30/00 ,  G02B6/4204 ,  G02B6/4208 ,  G02B6/4248 ,  G02B26/001 ,  G02B26/0833 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/039 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05109 ,  H01L2224/05123 ,  H01L2224/05138 ,  H01L2224/05163 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05562 ,  H01L2224/27462 ,  H01L2224/2747 ,  H01L2224/279 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29109 ,  H01L2224/29144 ,  H01L2224/32058 ,  H01L2224/32227 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01074 ,  H01L2924/1461 ,  H01L2924/164 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/03 ,  H01L2924/01042 ,  H01L2924/01072 ,  H01L2924/01004 ,  H01L2224/83 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03462

Abstract: In described examples, a hermetic package of a microelectromechanical system (MEMS) structure includes a substrate having a surface with a MEMS structure of a first height. The substrate is hermetically sealed to a cap forming a cavity over the MEMS structure. The cap is attached to the substrate surface by a vertical stack of metal layers adhering to the substrate surface and to the cap. The stack has a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance. The stack has: a first bottom metal seed film adhering to the substrate and a second bottom metal seed film adhering to the first bottom metal seed film; and a first top metal seed film adhering to the cap and a second top metal seed film adhering to the first top metal seed film.

公开(公告)号：US09921004B2

公开(公告)日：2018-03-20

申请号：US14925787

申请日：2015-10-28

Applicant: KELVIN THERMAL TECHNOLOGIES, INC.

Inventor： Ryan John Lewis ,  Yung-Cheng Lee ,  Li-Anne Liew ,  Yunda Wang

IPC: B44C1/22 ,  F28D15/04 ,  B23P15/26 ,  C23F4/00 ,  F28F13/18 ,  F28D15/02 ,  B81C1/00

CPC classification number: F28D15/046 ,  B23P15/26 ,  B81C1/00388 ,  B81C2201/0108 ,  C23F4/00 ,  F28D15/0233 ,  F28F13/187

Abstract: Embodiments described herein relate to the concept and designs of a polymer-based thermal ground plane. In accordance with one embodiment, a polymer is utilized as the material to fabricate the thermal ground plane. Other embodiments include am optimized wicking structure design utilizing two arrays of micropillars, use of lithography-based microfabrication of the TGP using copper/polymer processing, micro-posts, throttled releasing holes embedded in the micro-posts, atomic layer deposition (ALD) hydrophilic coating, throttled fluid charging structure and sealing method, defect-free ALD hermetic coating, and compliant structural design.

公开(公告)号：US20170152136A1

公开(公告)日：2017-06-01

申请号：US15429636

申请日：2017-02-10

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： John Charles Ehmke ,  Virgil Cotoco Ararao

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0038 ,  B81B2203/0315 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00293 ,  B81C2201/0108 ,  B81C2201/013 ,  B81C2201/0188 ,  B81C2201/0198 ,  B81C2201/053 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035 ,  B82Y30/00 ,  G02B6/4204 ,  G02B6/4208 ,  G02B6/4248 ,  G02B26/001 ,  G02B26/0833 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/039 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05109 ,  H01L2224/05123 ,  H01L2224/05138 ,  H01L2224/05163 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05562 ,  H01L2224/27462 ,  H01L2224/2747 ,  H01L2224/279 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29109 ,  H01L2224/29144 ,  H01L2224/32058 ,  H01L2224/32227 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01074 ,  H01L2924/1461 ,  H01L2924/164 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/03 ,  H01L2924/01042 ,  H01L2924/01072 ,  H01L2924/01004 ,  H01L2224/83 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03462

Abstract: In described examples, a hermetic package of a microelectromechanical system (MEMS) structure includes a substrate having a surface with a MEMS structure of a first height. The substrate is hermetically sealed to a cap forming a cavity over the MEMS structure. The cap is attached to the substrate surface by a vertical stack of metal layers adhering to the substrate surface and to the cap. The stack has a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance. The stack has: a first bottom metal seed film adhering to the substrate and a second bottom metal seed film adhering to the first bottom metal seed film; and a first top metal seed film adhering to the cap and a second top metal seed film adhering to the first top metal seed film.

公开(公告)号：US20160096729A1

公开(公告)日：2016-04-07

申请号：US14508342

申请日：2014-10-07

Applicant: Pixtronix, Inc.

Inventor： Javier Villarreal ,  Timothy Brosnihan ,  Chin-Yuan Ho ,  Hung-Chien Lin

IPC: B81C1/00 ,  B81B7/02 ,  G06T1/20 ,  B81B3/00

CPC classification number: G06T1/20 ,  B81B2201/045 ,  B81B2201/047 ,  B81B2203/0307 ,  B81C1/0019 ,  B81C2201/0108 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2201/0181 ,  G02B26/02

Abstract: This disclosure provides systems, methods and apparatus including processes that use two layers of resist, with a layer of etch stop material in between. The two layers of resist may be etched in separate processes to form devices having vias with sidewalls that extend through both layers of resist

Abstract translation: 本公开提供了包括使用两层抗蚀剂的工艺的系统，方法和设备，其间具有一层蚀刻停止材料。 可以在单独的工艺中蚀刻两层抗蚀剂，以形成具有延伸穿过两层抗蚀剂的侧壁的通路的器件

公开(公告)号：US08962487B2

公开(公告)日：2015-02-24

申请号：US13202951

申请日：2010-02-24

Applicant: Abdennour Abbas ,  Didier Guillochon ,  Bertrand Bocquet ,  Philippe Supiot

Inventor： Abdennour Abbas ,  Didier Guillochon ,  Bertrand Bocquet ,  Philippe Supiot

IPC: H01L21/311 ,  H01L29/06 ,  B81C1/00

CPC classification number: B81C1/00071 ,  B81B2201/0214 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C2201/0108 ,  B81C2201/018

Abstract: The present invention relates to a process for fabricating microchannels on a substrate and to a substrate comprising these microchannels, the invention being especially applicable to the fabrication of microstructured substrates for microelectronic, microfluidic and/or micromechanical systems.The process includes a step (a) of producing at least one or at least two patterns 2 on the surface of a bottom layer 1 and a step (b) of depositing, on top of the bottom layer and the pattern or patterns, a layer 3 of polymer material obtained by polymerizing an organic or organometallic monomer that contains siloxane functional groups, for example tetramethyldisiloxane, in a plasma-enhanced, optionally remote plasma-enhanced, chemical vapor deposition reactor (PECVD or optionally RPECVD) reactor.The layer of polymer material is deposited so as to create, in place of the pattern and after development by decomposing this pattern, or between the two patterns without development/decomposition, a channel 4a, 4b, 4c, 4d closed over at least part of its length.

Abstract translation: 本发明涉及一种用于在衬底上制造微通道的方法以及包括这些微通道的衬底，本发明特别适用于微电子，微流体和/或微机械系统的微结构化衬底的制造。 该方法包括在底层1的表面上产生至少一个或至少两个图案2的步骤（a）和在底层和图案或图案的顶部上沉积层（b）的步骤 通过聚合含有硅氧烷官能团的有机或有机金属单体（例如四甲基二硅氧烷）在等离子体增强的，任选地远程等离子体增强的化学气相沉积反应器（PECVD或任选的RPECVD）反应器中获得的聚合物材料3。 沉积聚合物材料层，以通过分解该图案或在两个图案之间或不在显影/分解下产生代替图案和显影之后，通道4a，4b，4c，4d在至少部分 它的长度。

公开(公告)号：US08921165B2

公开(公告)日：2014-12-30

申请号：US13565693

申请日：2012-08-02

Applicant: Brian I. Troy ,  Mickael Renault ,  Thomas L. Maguire ,  Joseph Damian Gordon Lacey ,  James F. Bobey

Inventor： Brian I. Troy ,  Mickael Renault ,  Thomas L. Maguire ,  Joseph Damian Gordon Lacey ,  James F. Bobey

IPC: H01L21/82 ,  H01L21/66 ,  G01R31/26 ,  H01L21/00 ,  H01L23/28 ,  G01P15/08 ,  H01L21/70 ,  B81C1/00 ,  H01H1/00

CPC classification number: B81C1/00484 ,  B81B3/0008 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81C2201/0108 ,  H01H1/0036 ,  H01H2001/0089

Abstract: The present invention generally relates to a MEMS device in which silicon residues from the adhesion promoter material are reduced or even eliminated from the cavity floor. The adhesion promoter is typically used to adhere sacrificial material to material above the substrate. The adhesion promoter is the removed along with then sacrificial material. However, the adhesion promoter leaves silicon based residues within the cavity upon removal. The inventors have discovered that the adhesion promoter can be removed from the cavity area prior to depositing the sacrificial material. The adhesion promoter which remains over the remainder of the substrate is sufficient to adhere the sacrificial material to the substrate without fear of the sacrificial material delaminating. Because no adhesion promoter is used in the cavity area of the device, no silicon residues will be present within the cavity after the switching element of the MEMS device is freed.

Abstract translation: 本发明一般涉及一种MEMS器件，其中来自粘合促进剂材料的硅残余物从空腔底板减少甚至消除。 粘合促进剂通常用于将牺牲材料粘附到衬底上方的材料上。 粘附促进剂与牺牲材料一起被去除。 然而，粘合促进剂在去除时将硅基残留物留在空腔内。 发明人已经发现，在沉积牺牲材料之前，可以从空腔区域去除粘合促进剂。 保留在基材的其余部分上的粘合促进剂足以将牺牲材料粘附到基材上，而不用担心牺牲材料分层。 因为在器件的空腔区域中没有使用粘合促进剂，所以在MEMS器件的开关元件被释放之后，腔内将不存在硅残余物。

公开(公告)号：US08796058B2

公开(公告)日：2014-08-05

申请号：US13287575

申请日：2011-11-02

Applicant: Russell T. Herrin ,  Daniel R. Miga ,  Anthony K. Stamper

Inventor： Russell T. Herrin ,  Daniel R. Miga ,  Anthony K. Stamper

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81C1/00476 ,  B81B2203/0315 ,  B81C99/007 ,  B81C2201/0108 ,  H01L21/56 ,  H01L23/544 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Micro-Electro-Mechanical System (MEMS) structures, metrology structures and methods of manufacture are disclosed. The method includes forming one or metrology structure, during formation of a device in a chip area. The method further includes venting the one or more metrology structure after formation of the device.

Abstract translation: 公开了微机电系统（MEMS）结构，计量结构和制造方法。 该方法包括在芯片区域中的器件形成期间形成一个或计量结构。 该方法还包括在形成装置之后排出一个或多个计量结构。

公开(公告)号：US08728717B2

公开(公告)日：2014-05-20

申请号：US13537556

申请日：2012-06-29

Applicant: Paul A. Kohl ,  Yu-Chun Chen

Inventor： Paul A. Kohl ,  Yu-Chun Chen

IPC: G03F7/20

CPC classification number: G03F7/095 ,  B81B2203/0315 ,  B81C1/00476 ,  B81C2201/0108 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/168 ,  G03F7/36 ,  G03F7/38 ,  G03F7/40 ,  H01L21/7682

Abstract: Embodiments according to the present invention relate generally to PAG bilayer and PAG-doped unilayer structures using sacrificial polymer layers that incorporate a photoacid generator having a concentration gradient therein. Said PAG concentration being higher in a upper portion of such structures than in a lower portion thereof. Embodiments according to the present invention also relate to a method of using such bilayers and unilayers to form microelectronic structures having a three-dimensional space, and methods of decomposition of the sacrificial polymer within the aforementioned layers.

Abstract translation: 根据本发明的实施方案一般涉及使用掺入其中具有浓度梯度的光致酸发生器的牺牲聚合物层的PAG双层和PAG掺杂的单层结构。 所述PAG浓度在这种结构的上部比在其下部更高。 根据本发明的实施方案还涉及使用这种双层和单层以形成具有三维空间的微电子结构的方法，以及在上述层内分解牺牲聚合物的方法。

公开(公告)号：US08264054B2

公开(公告)日：2012-09-11

申请号：US10291125

申请日：2002-11-08

Applicant: Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  John Richard Gilbert

Inventor： Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  John Richard Gilbert

IPC: H01L31/058

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: MEMS Device having Electrothermal Actuation and Release and Method for Fabricating. According to one embodiment, a microscale switch is provided and can include a substrate and a stationary electrode and stationary contact formed on the substrate. The switch can further include a movable microcomponent suspended above the substrate. The microcomponent can include a structural layer including at least one end fixed with respect to the substrate. The microcomponent can further include a movable electrode spaced from the stationary electrode and a movable contact spaced from the stationary electrode. The microcomponent can include an electrothermal component attached to the structural layer and operable to produce heating for generating force for moving the structural layer.

Abstract translation: 具有电热驱动和释放的MEMS器件和制造方法。 根据一个实施例，提供微型开关，并且可以包括形成在基板上的基板和固定电极和固定触点。 开关还可以包括悬浮在基板上方的可移动的微型部件。 微组件可以包括包括相对于基底固定的至少一个端部的结构层。 微型部件还可以包括与固定电极间隔开的可动电极和与固定电极间隔开的可动触头。 微组件可以包括附接到结构层的电热组件，并且可操作以产生用于产生用于移动结构层的力的加热。