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    Method for Fabricating Suspended MEMS Structures
    184.
    发明申请
    Method for Fabricating Suspended MEMS Structures 有权
    制造悬浮MEMS结构的方法

    公开(公告)号：US20160304340A1

    公开(公告)日：2016-10-20

    申请号：US14687943

    申请日：2015-04-16

    Applicant: David J. Meyer ,  Brian P. Downey

    Inventor： David J. Meyer ,  Brian P. Downey

    IPC: B81C1/00

    CPC classification number: B81C1/00539 ,  B81C1/00936 ,  B81C2201/0107 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0177

    Abstract: A process for fabricating a suspended microelectromechanical system (MEMS) structure comprising epitaxial semiconductor functional layers that are partially or completely suspended over a substrate. A sacrificial release layer and a functional device layer are formed on a substrate. The functional device layer is etched to form windows in the functional device layer defining an outline of a suspended MEMS device to be formed from the functional device layer. The sacrificial release layer is then etched with a selective release etchant to remove the sacrificial release layer underneath the functional layer in the area defined by the windows to form the suspended MEMS structure.

    Abstract translation: 一种用于制造悬浮微机电系统（MEMS）结构的方法，其包括部分或完全悬浮在衬底上的外延半导体功能层。 在基板上形成牺牲剥离层和功能元件层。 功能器件层被蚀刻以在功能器件层中形成窗口，其限定要由功能器件层形成的悬置的MEMS器件的轮廓。 然后用选择性释放蚀刻剂蚀刻牺牲剥离层，以去除由窗口限定的区域中的功能层下方的牺牲剥离层，以形成悬浮的MEMS结构。

    METHOD FOR FABRICATING AT LEAST ONE APERTURE WITH SHAPED SIDEWALLS IN A LAYER OF A LIGHT SENSITIVE PHOTOPOLYMER
    186.
    发明申请
    METHOD FOR FABRICATING AT LEAST ONE APERTURE WITH SHAPED SIDEWALLS IN A LAYER OF A LIGHT SENSITIVE PHOTOPOLYMER 审中-公开
    用于在光敏感光聚合物层中形成具有形状的小孔的至少一个孔的方法

    公开(公告)号：US20160062239A1

    公开(公告)日：2016-03-03

    申请号：US14713551

    申请日：2015-05-15

    Applicant: University of Southampton

    Inventor： Hywel Morgan ,  Sumit Kalsi ,  Maurits de Planque ,  Kian Shen Kiang

    IPC: G03F7/20 ,  G03F7/16

    CPC classification number: G03F7/11 ,  B81B2201/0214 ,  B81B2203/0127 ,  B81B2203/0384 ,  B81C1/00103 ,  B81C2201/0159 ,  G03F1/50 ,  G03F7/038 ,  G03F7/039

    Abstract: A method for fabricating at least one aperture (60, 64) with shaped sidewalls in a layer (52) of a light sensitive photopolymer (54), which method comprises: (i) providing the layer (52) of the photopolymer (54); (ii) providing a mask (56); (iii) exposing the photopolymer (54) to light (58); (iv) utilising the mask (56) to control the intensity of the light (58) falling on the photopolymer (54); and (v) forming the mask (56) such that its control of the intensity of the light (58) falling on the photopolymer (54) causes the aperture (60, 64) to have the shaped sidewalls.

    Abstract translation: 一种用于在光敏光聚合物（54）的层（52）中制造具有成形侧壁的至少一个孔（60,64）的方法，所述方法包括：（i）提供光聚合物（54）的层（52） ; （ii）提供掩模（56）; （iii）将光聚合物（54）暴露于光（58）; （iv）利用所述掩模（56）来控制落在光聚合物（54）上的光（58）的强度; 和（v）形成掩模（56），使得其对落在光聚合物（54）上的光（58）的强度的控制导致孔径（60,64）具有成形侧壁。

    Electron beam processing with condensed ice
    188.
    发明授权
    Electron beam processing with condensed ice 有权
    用冷凝冰进行电子束加工

    公开(公告)号：US08790863B2

    公开(公告)日：2014-07-29

    申请号：US13881504

    申请日：2011-10-26

    Applicant: Daniel Branton ,  Anpan Han ,  Jene A. Golovchenko

    Inventor： Daniel Branton ,  Anpan Han ,  Jene A. Golovchenko

    IPC: G03F7/38 ,  B82B3/00 ,  G03F7/16

    CPC classification number: G03F7/2059 ,  B81C1/00531 ,  B81C2201/0143 ,  B81C2201/0159 ,  B82Y10/00 ,  B82Y40/00 ,  G01N23/2251 ,  H01J37/3174 ,  H01J2237/004 ,  H01J2237/022 ,  H01J2237/2002 ,  H01J2237/2803 ,  H01J2237/2809 ,  H01J2237/31796 ,  H01L21/0331 ,  H01L22/12 ,  H01L51/0014 ,  H01L51/0048

    Abstract: In a method for imaging a solid state substrate, a vapor is condensed to an amorphous solid water condensate layer on a surface of a solid state substrate. Then an image of at least a portion of the substrate surface is produced by scanning an electron beam along the substrate surface through the water condensate layer. The water condensate layer integrity is maintained during electron beam scanning to prevent electron-beam contamination from reaching the substrate during electron beam scanning. Then one or more regions of the layer can be locally removed by directing an electron beam at the regions. A material layer can be deposited on top of the water condensate layer and any substrate surface exposed at the one or more regions, and the water condensate layer and regions of the material layer on top of the layer can be removed, leaving a patterned material layer on the substrate.

    Abstract translation: 在固态基板成像方法中，将蒸气冷凝成固态基板表面的无定形固体水凝结物层。 然后通过沿着衬底表面扫描电子束通过水凝结层产生衬底表面的至少一部分的图像。 在电子束扫描期间维持水凝结层的完整性，以防止电子束扫描期间电子束污染到达衬底。 然后可以通过在该区域处引导电子束来局部地去除该层的一个或多个区域。 材料层可以沉积在水冷凝物层的顶部和在一个或多个区域暴露的任何基底表面，并且水凝结物层和该层顶部上的材料层的区域可以被去除，留下图案化的材料层 在基板上。

    Method to fabricate a mould for lithography by nano-imprinting
    190.
    发明授权
    Method to fabricate a mould for lithography by nano-imprinting 有权
    通过纳米压印制造光刻模具的方法

    公开(公告)号：US08778195B2

    公开(公告)日：2014-07-15

    申请号：US12715801

    申请日：2010-03-02

    Applicant: Stéfan Landis

    Inventor： Stéfan Landis

    IPC: B44C1/22 ,  B82Y40/00

    CPC classification number: G03F7/2059 ,  B81C99/009 ,  B81C2201/0159 ,  B81C2201/034 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/0017

    Abstract: A method to fabricate an imprint mould in three dimensions including at least: a) forming at least one trench, of width W and depth h, in a substrate, thereby forming three surfaces including, a bottom of the at least one trench, sidewalls of the at least one trench, and a remaining surface of the substrate, called top of the substrate; b) forming alternate layers in the at least one trench, each having at least one portion perpendicular to the substrate, in a first material and in a second material which can be selectively etched relative to the first material; and c) selectively etching said portions of the layers perpendicular to the substrate.

    Abstract translation: 一种在三维中制造压印模具的方法，至少包括：a）在衬底中形成宽度为W和深度为h的至少一个沟槽，从而形成三个表面，包括至少一个沟槽的底部， 所述至少一个沟槽和所述衬底的剩余表面称为所述衬底的顶部; b）在所述至少一个沟槽中形成交替层，每个沟槽具有至少一部分垂直于所述衬底的第一材料和第二材料，所述第二材料可相对于所述第一材料选择性地蚀刻; 和c）选择性地刻蚀垂直于衬底的层的所述部分。

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