公开(公告)号：EP2270832A1

公开(公告)日：2011-01-05

申请号：EP09724694.6

申请日：2009-03-24

Applicant: National University Corporation Nagoya University

Inventor： UJIHARA, Toru ,  JIN, Xiuguang ,  TAKEDA, Yoshikazu ,  NAKANISHI, Tsutomu ,  YAMAMOTO, Naoto ,  SAKA, Takashi ,  KATOU, Toshihiro

IPC: H01J37/073 ,  G21K1/00 ,  H01J1/34

CPC classification number: G21K1/16 ,  H01J1/34 ,  H01J3/021 ,  H01J37/06 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557 ,  H01J2237/26

Abstract: To provide implement a spin-polarized electron generating device having high spin polarization and high external quantum efficiency while allowing a certain degree of freedom in selecting materials of a substrate, a buffer layer, and a strained superlattice layer.
In a spin-polarized electron generating device having a substrate, a buffer layer, and a strained superlattice layer formed on the buffer layer, an intermediate layer formed of a crystal having a lattice constant greater than that of a crystal used to form the buffer layer intervenes between the substrate and the buffer layer. With this arrangement, tensile strain causes cracks to be formed in the buffer layer in a direction perpendicular to the substrate, whereby the buffer layer has mosaic-like appearance. As a result, glide dislocations in an oblique direction do not propagate to the strained superlattice layer to be grown on the buffer layer, thereby improving crystallinity of the strained superlattice layer. Accordingly, spin polarization of excited electrons and external quantum efficiency of polarized electrons improve.

Abstract translation: 提供具有高自旋极化和高外部量子效率的自旋极化电子发生器件，同时在选择衬底，缓冲层和应变超晶格层的材料方面具有一定的自由度。 在具有形成在缓冲层上的衬底，缓冲层和应变超晶格层的自旋极化电子发生器件中，由晶格常数大于用于形成缓冲层的晶体的晶格常数的晶体形成的中间层 介于衬底和缓冲层之间。 通过这种布置，拉伸应变使得缓冲层中的垂直于基板的方向形成裂纹，由此缓冲层具有马赛克状外观。 结果，倾斜方向的滑移位错不会传播到在缓冲层上生长的应变超晶格层，从而提高应变超晶格层的结晶度。 因此，激发电子的自旋极化和极化电子的外部量子效率提高。

公开(公告)号：EP0902959A1

公开(公告)日：1999-03-24

申请号：EP97925708.0

申请日：1997-05-20

Applicant: Schwartz, Ansel M. ,  Mako, Frederick Michael

Inventor： MAKO, Frederick, M. ,  FISHER, Amnon

IPC: H01J3 ,  H01J23

CPC classification number: H01J3/023 ,  H01J23/06 ,  H01J2201/3423

Abstract: The present invention pertains to an electron gun that generates an electron flow to produce r.f. energy therefrom. The electron gun (10) comprises an electrostatic cavity (12) having a first stage (14) with emitting faces (16) and multiple stages with emitting sections (18). The electron gun (10) also includes an electrostatic force generating mechanism (15) which encompasses the emitting faces (16) and the multiple emitting sections (18) such that electrons directed from the emitting faces (16) contact the emitting sections (18) so that additional electrons are emitted therefrom. Moreover, a method of producing electrons using this invention is described.

公开(公告)号：EP0873573A2

公开(公告)日：1998-10-28

申请号：EP96923487.0

申请日：1996-06-27

Applicant: INTEVAC, INC. ,  THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY

Inventor： BAUM, Aaron W. ,  COSTELLO, Kenneth, A. ,  PEASE, R. Fabian

IPC: H01J37 ,  G03F7 ,  H01J1 ,  H01J3 ,  H01J27

CPC classification number: G03F7/70375 ,  H01J3/021 ,  H01J27/04 ,  H01J37/073 ,  H01J2201/3423

Abstract: An electron source includes a negative electron affinity photocathode (10) on a light-transmissive substrate (12) and a light beam generator (50) for directing a light beam through the substrate at the photocathode for exciting electrons into the conduction band. The photocathode has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electron source further includes electron optics (66) for forming the electrons into an electron beam and a vacuum enclosure (14) for maintaining the photocathode at high vacuum. In one embodiment, the active emission area of the photocathode is defined by the light beam that is incident on the photocathode. In another embodiment, the active emission area of the photocathode is predefined by surface modification of the photocathode. The source provides very high brightness from an ultra-small active emission area of the photocathode.

公开(公告)号：EP0718865A2

公开(公告)日：1996-06-26

申请号：EP95309258.2

申请日：1995-12-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Niigaki, Minoru, c/o Hamamatsu Photonics K.K. ,  Hirohata, Toru, c/o Hamamatsu Photonics K.K. ,  Suzuki, Tomoko, c/o Hamamatsu Photonics K.K. ,  Yamada, Masami, c/o Hamamatsu Photonics K.K.

IPC: H01J1/34 ,  H01J43/08

CPC classification number: H01J1/34 ,  H01J43/08 ,  H01J2201/3423

Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode (15) and a lower surface electrode (17) by a battery (18). Upon application of this voltage, a p-n junction formed between a contact layer (14) and an electron emission layer (13) is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer (12) in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer into excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.

Abstract translation: 提供了光电转换特性的稳定性和再现性优异并且具有能够获得高光敏性的结构的光电发射表面。 通过电池（18）在上表面电极（15）和下表面电极（17）之间施加预定的电压。 在施加该电压时，形成在接触层（14）和电子发射层（13）之间的p-n结被反向偏置。 耗尽层从p-n结延伸到光电发射表面，并且在电子发射层中形成电场，并在光子电子的加速方向上形成光吸收层（12）。 当入射光在光吸收层中被吸收到激发光电子中时，光电子被电场加速到发射表面。 光电子在该电场加速时获​​得能量，并且在电子发射层中转移到更高能级的导带，并发射到真空中。

公开(公告)号：EP0329432B1

公开(公告)日：1996-05-15

申请号：EP89301475.3

申请日：1989-02-16

Applicant: CANON KABUSHIKI KAISHA

Inventor： Eguchi, Ken ,  Kawada, Haruki ,  Sakai, Kunihiro ,  Matsuda, Hiroshi ,  Takimoto, Kiyoshi ,  Kawade, Hisaaki ,  Morikawa, Yuko ,  Yanagisawa, Yoshihiro

IPC: H01J1/30

CPC classification number: H01J1/34 ,  H01J1/30 ,  H01J2201/3423

公开(公告)号：EP0549201B1

公开(公告)日：1996-03-20

申请号：EP92311275.9

申请日：1992-12-10

Applicant: LITTON SYSTEMS, INC.

Inventor： Kim, Hyo-Sup

IPC: H01J1/34 ,  H01J29/38 ,  H01J9/12

CPC classification number: H01J9/12 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2231/50015 ,  Y10S438/936

公开(公告)号：EP0589475A1

公开(公告)日：1994-03-30

申请号：EP93115446.2

申请日：1993-09-24

Applicant: KATSUMI KISHINO ,  DAIDO TOKUSHUKO KABUSHIKI KAISHA

Inventor： Kishino, Katsumi ,  Kato, Toshihiro

IPC: H01J1/34

CPC classification number: H01J37/073 ,  H01J1/34 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06383

Abstract: An electron emitting element (10) including a semiconductor opto-electronic layer (18) having a split valence band and capable of emitting a beam of spin-polarized electrons from an emitting surface (19) thereof upon incidence of an excitation laser radiation upon the emitting surface, and a reflecting mirror (14) formed on one of opposite sides of the opto-electronic layer remote from the emitting surface and cooperating with the emitting surface to effect multiple reflection therebetween of the incident laser radiation. The emitting element may be provided with a semiconductor light modulator element (114, 150, 170, 216, 280, 298) for modulating the intensity of the laser radiation incident upon the opto-electronic layer. A laser source (212, 304) may be formed integrally with the emitting element and disposed on the side of the opto-electronic layer remote from the emitting surface.

Abstract translation: 一种电子发射元件（10），包括具有分裂价带的半导体光电子层（18），并且能够在激发激光辐射入射到其上时从其发射表面（19）发射自旋极化电子束 以及反射镜（14），其形成在所述光电子层的远离所述发光表面的相对侧的一侧上，并与所述发射表面配合以在所述入射激光辐射之间进行多次反射。 发光元件可以设置有用于调制入射在光电子层上的激光辐射的强度的半导体光调制元件（114,150,170,216,280,298）。 激光源（212,304）可以与发光元件一体地形成并且设置在远离发射表面的光电子层的侧面上。

公开(公告)号：EP0464242A1

公开(公告)日：1992-01-08

申请号：EP90112718.3

申请日：1990-07-03

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mizushima, Yoshihiko ,  Hirohata, Toru ,  Ihara, Tsuneo ,  Niigaki, Minoru ,  Sugimoto, Kenichi ,  Oba, Koichiro ,  Suzuki, Toshihiro ,  Suzuki, Tomoko

IPC: H01J1/34

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: A junction, such as a Schottky junction, is formed between a conductive electrode (42) and a semiconductor (41). A bias voltage is applied between the conductive electrode (42) and an outward-emission-side electrode (43) formed on the semiconductor (41) at the side opposite to the junction. Upon illumination, photoelectrons are internally emitted in the conductive electrode (42) into the semiconductor (41), transported through the semiconductor (41), and emitted outward from the semiconductor surface, which has been so treated as to reduce the surface barrier height. The semiconductor is semi-insulating, or a p-n junction is formed therein.

Abstract translation: 在导电电极（42）和半导体（41）之间形成诸如肖特基结的结。 在导电电极（42）和形成在半导体（41）的与该结的相反侧的外侧发射侧电极（43）之间施加偏置电压。 在照射时，光电子在导电电极（42）内部发射到半导体（41）中，通过半导体（41）传输，并从半导体表面向外发射，该半导体表面经过如此处理以降低表面势垒高度。 半导体是半绝缘的，或者在其中形成p-n结。

公开(公告)号：EP0206422B1

公开(公告)日：1990-02-28

申请号：EP86201069.1

申请日：1986-06-19

Applicant: Philips Electronics N.V.

Inventor： Zwier, Jan ,  Vasterink, Johannes Hermannus Antonius ,  van Esdonk, Johannes

IPC: H01J3/02

CPC classification number: H01J1/32 ,  H01J1/308 ,  H01J1/34 ,  H01J3/02 ,  H01J2201/3423

公开(公告)号：EP0259878A3

公开(公告)日：1990-01-24

申请号：EP87113260.1

申请日：1987-09-10

Applicant: CANON KABUSHIKI KAISHA

Inventor： Suzuki, Akira ,  Tsukamoto, Takeo ,  Shimizu, Akira ,  Sugata, Masao ,  Shimoda, Isamu ,  Okunuki, Masahiko

IPC: H01J1/34 ,  H01J1/30

CPC classification number: H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: An electron emission element comprises a P-type semiconductor substrate (1) and electrodes (2, 3) formed on both ends of the semiconductor substrate. A voltage is applied between said electrodes. The P-type semiconductor substrate is irradiated with light to emit the electrons, generated in the P-type semiconductor substrate by photoexcitation, from an electron emitting face (4) at an end of the P-type semiconductor substrate.