中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

27 records (took 0.023 seconds)

    LOADING MECHANISMS
    13.
    发明公开
    LOADING MECHANISMS 失效
    装载机。

    公开(公告)号：EP0520996A1

    公开(公告)日：1993-01-07

    申请号：EP91903229.0

    申请日：1991-02-14

    Applicant: SURFACE TECHNOLOGY SYSTEMS LIMITED

    Inventor： BRANCHER, Carl, David, Monnington

    IPC: H01L21

    CPC classification number: H01L21/67754 ,  H01L21/68742 ,  H01L21/68771 ,  Y10S414/137 ,  Y10S414/14

    Abstract: Appareil de traitement (10) possédant des chambres (11 et 12) ainsi qu'un mécanisme de chargement (13) servant à introduire et à extraire les pièces des chambres. Les pièces sont transportées sur un plateau (16) présentant des fentes de façon qu'à son introduction dans les chambres (11 ou 12), les fentes s'alignent sur les lignes AH de broches de levage. Ce dispositif permet au mécanisme (13) de retirer le plateau tandis que les broches (22) sont en position d'élévation.

    PLASMA PROCESSING APPARATUS
    14.
    发明公开
    PLASMA PROCESSING APPARATUS 有权
    等离子体处理设备

    公开(公告)号：EP1055250A1

    公开(公告)日：2000-11-29

    申请号：EP99958406.3

    申请日：1999-12-10

    Applicant: Surface Technology Systems Limited

    Inventor： BHARDWAJ, Jyoti, Kiron ,  LEA, Leslie Michael

    IPC: H01J37/32

    CPC classification number: H01J37/32623 ,  H01J37/3266 ,  H01J2237/3348 ,  H01L21/30655

    Abstract: A chamber (2) has a side wall (8), the upper region of which is formed as a dielectric window (9). An antenna (10) is located outside of the dielectric window (9) and is used to couple RF power inductively into the plasma of an etchant or deposition gas which is formed inside the apparatus. A series of parallel tubes (11) are mounted in a plane parallel to the surface of a platen (6) carrying a wafer (7). Each tube contains a small permanent magnet or series of magnets. Electrons from the plasma created near the antenna (10) move into the region of influence of the magnetic field, are guided by the magnetic field and then lost, for example to the wall (8). The net result is a reduction in plasma density, on transmitting the magnetic field, from the region in which the plasma is produced to the region in which the wafer is placed. The magnetic field has no effect on the radicals, and the magnet carrying tubes have only a marginal effect on the radical numbers. Use of this magnetic attenuator allows high RF powers to be applied to the plasma source, producing the high numbers of radicals needed for a high etch rate, but limits the number of ions which can reach the wafer so that the physical component is homogeneous and well controlled.

    Method and apparatus for etching a workpiece
    15.
    发明公开
    Method and apparatus for etching a workpiece 失效
    用于蚀刻工件的方法和装置

    公开(公告)号：EP0878824A3

    公开(公告)日：2000-01-19

    申请号：EP98303196.4

    申请日：1998-04-24

    Applicant: Surface Technology Systems Limited

    Inventor： McQuarrie, Andrew Duncan ,  Boman, Lee Campbell

    IPC: H01J37/32

    CPC classification number: H01J37/3244

    Abstract: An XeF 2 source 12 comprises a XeF 2 source chamber 16, which includes a tray or ampoule 17 for XeF 2 crystals 17a, a reservoir 18 via valve 19, a flow controller 13 fed by the reservoir 18 and a valve 20 between the reservoir 18 and the controller 13. Pressure sources 21 and 22 are provided respectively to maintain the reservoir 18 and the source chamber 16 at the sublimination pressure of XeF 2 . The arrangement allows for a steady supply of XeF 2 to an etching chamber.

    METHOD AND APPARATUS FOR STABILISING A PLASMA
    17.
    发明公开
    METHOD AND APPARATUS FOR STABILISING A PLASMA 有权
    方法和装置用于稳定等离子体

    公开(公告)号：EP1088329A1

    公开(公告)日：2001-04-04

    申请号：EP00919057.0

    申请日：2000-04-12

    Applicant: Surface Technology Systems Limited

    Inventor： BHARDWAJ, Jyoti Kiron ,  LEA, Leslie Michael ,  GUIBARRA, Edward

    IPC: H01J37/32 ,  H01L21/3065

    CPC classification number: H01J37/32935 ,  H01J37/321 ,  H01L21/30655

    Abstract: A workpiece is processed in a chamber by striking a plasma in the chamber, treating the workpiece by cyclically adjusting the processing parameters between at least a first step having a first set of processing parameters and a second step having a second set of process parameters, wherein the plasma is stabilised during the transition between the first and second steps. These steps may comprise cyclic etch and deposition steps. One possibility for stabilising the plasma is by matching the impedance of the plasma to the impedance of the power supply which provides energy to the plasma, by means of a matching unit which can be controlled in a variety of ways depending upon the step type or time during the step. Another possibility is to prevent or reduce substantially variation in the pressure in the chamber between the first and second steps.

    PLASMA PROCESSING APPARATUS
    20.
    发明公开
    PLASMA PROCESSING APPARATUS 审中-公开
    等离子体处理设备

    公开(公告)号：EP1004136A1

    公开(公告)日：2000-05-31

    申请号：EP99926627.3

    申请日：1999-06-16

    Applicant: Surface Technology Systems Limited

    Inventor： BHARDWAJ, Jyoti, Kiron ,  LEA, Leslie, Michael

    IPC: H01J37/32

    CPC classification number: H01J37/32504 ,  H01J37/321 ,  H01J37/32623

    Abstract: There is disclosed a plasma processing apparatus comprising: a) a chamber having a plasma containing region, the chamber having a dielectric portion; b) an antenna (6) for coupling radio frequency (RF) power into the plasma; and c) a shield member (2) which reduces the level of RF power capacitively coupled into the plasma, wherein the shield member (2) comprises a conducting portion and is positioned between the plasma and the dielectric portion. Also disclosed is a shield member, particularly one for use in the described plasma processing apparatus.

Patent Agency Ranking