形成微結構的方法 PROCESS FOR FORMING MICROSTRUCTURES
    11.
    发明专利
    形成微結構的方法 PROCESS FOR FORMING MICROSTRUCTURES 失效
    形成微结构的方法 PROCESS FOR FORMING MICROSTRUCTURES

    公开(公告)号:TW200626490A

    公开(公告)日:2006-08-01

    申请号:TW094143810

    申请日:2005-12-12

    IPC: B81C

    Abstract: 本發明與在基板上形成微結構的方法相關。施加一個電鍍表面於基板上。第一光阻層施加在電鍍基材之上。第一光阻層以一個輻射線圖案暴露,以提供在第一圖案內可溶解的第一光阻層。除去可溶解光阻,然後電鍍第一層主要金屬在除去第一光阻層的區域上。然後除去剩餘的光阻部分,並且施加第二光阻層在電鍍基材以及第一層主要金屬上。第二光阻層然後暴露於第二輻射圖案,以使得光阻可溶解並且除去可溶解的光阻。第二圖案是一個圍繞主要結構的區域,但是它不包含整個基板。相反地它是圍繞主要金屬的一個島。然後機械加工次要金屬的暴露表面到主要金屬要求的一個高度。次要金屬然後被蝕刻掉。

    Abstract in simplified Chinese: 本发明与在基板上形成微结构的方法相关。施加一个电镀表面于基板上。第一光阻层施加在电镀基材之上。第一光阻层以一个辐射线图案暴露,以提供在第一图案内可溶解的第一光阻层。除去可溶解光阻,然后电镀第一层主要金属在除去第一光阻层的区域上。然后除去剩余的光阻部分,并且施加第二光阻层在电镀基材以及第一层主要金属上。第二光阻层然后暴露于第二辐射图案,以使得光阻可溶解并且除去可溶解的光阻。第二图案是一个围绕主要结构的区域,但是它不包含整个基板。相反地它是围绕主要金属的一个岛。然后机械加工次要金属的暴露表面到主要金属要求的一个高度。次要金属然后被蚀刻掉。

    A SUPERFILLING SECONDARY METALLIZATION PROCESS IN MEMS FABRICATION
    12.
    发明申请
    A SUPERFILLING SECONDARY METALLIZATION PROCESS IN MEMS FABRICATION 审中-公开
    MEMS制造中的超填充二次金属化过程

    公开(公告)号:WO2011059831A2

    公开(公告)日:2011-05-19

    申请号:PCT/US2010/054793

    申请日:2010-10-29

    Inventor: LEAVY, Montray

    CPC classification number: C25D1/003 B32B15/01 C25D3/38

    Abstract: Processes are provided herein for the fabrication of MFMS utilizing both a primary metal that is integrated into the final MEMS structure and a sacrificial secondary metal that provides structural support for the primary metal component during machining More specifically, techniques are disclosed to increase the rate of secondary metal deposition between primary metal features in order to prevent voiding in the sacrificial secondary metal and thus enhance structural support of the primary metal during machining.

    Abstract translation: 这里提供了利用集成到最终MEMS结构中的主金属和在加工期间为主金属部件提供结构支撑的牺牲次级金属制造MFMS的工艺。更具体地,技术 被公开用于增加主要金属特征之间的次级金属沉积速率,以便防止牺牲次级金属中的空洞并因此加强在加工过程中主要金属的结构支撑。

    PROBE HEAD FOR A MICROELECTRONIC CONTACTOR ASSEMBLY, AND METHODS OF MAKING SAME
    13.
    发明申请
    PROBE HEAD FOR A MICROELECTRONIC CONTACTOR ASSEMBLY, AND METHODS OF MAKING SAME 审中-公开
    用于微电子接触器组件的探头及其制造方法

    公开(公告)号:WO2010096711A3

    公开(公告)日:2011-01-20

    申请号:PCT/US2010024813

    申请日:2010-02-19

    CPC classification number: G01R1/07378

    Abstract: Microelectronic contactors on a probe contactor substrate, or adhesive elements on a probe contactor or space transformer substrate, are protected by a sacrificial material as 1) the microelectronic contactors or adhesive elements are pianarized, or 2) a surface of the substrate on which the microelectronic contactors or adhesive elements are formed is planarized. The adhesive elements are used to bond the probe contactor substrate to the space transformer substrate.

    Abstract translation: 探针接触器基板上的微电子接触器或探针接触器或空间变压器基板上的粘合元件由牺牲材料保护,因为1)微电子接触器或粘合元件被钢化,或2)基板的表面,微电子 形成接触器或粘合剂元件。 粘合元件用于将探针接触器基板粘合到空间变换器基板。

    PROBE HEAD FOR A MICROELECTRONIC CONTACTOR ASSEMBLY, AND METHODS OF MAKING SAME
    14.
    发明申请
    PROBE HEAD FOR A MICROELECTRONIC CONTACTOR ASSEMBLY, AND METHODS OF MAKING SAME 审中-公开
    用于微电子接触器组件的探头及其制造方法

    公开(公告)号:WO2010096711A2

    公开(公告)日:2010-08-26

    申请号:PCT/US2010/024813

    申请日:2010-02-19

    CPC classification number: G01R1/07378

    Abstract: Microelectronic contactors on a probe contactor substrate, or adhesive elements on a probe contactor or space transformer substrate, are protected by a sacrificial material as 1) the microelectronic contactors or adhesive elements are pianarized, or 2) a surface of the substrate on which the microelectronic contactors or adhesive elements are formed is planarized. The adhesive elements are used to bond the probe contactor substrate to the space transformer substrate.

    Abstract translation: 探针接触器基板上的微电子接触器或探针接触器或空间变压器基板上的粘合元件由牺牲材料保护,因为1)微电子接触器或粘合元件被钢化,或2)基板的表面,微电子 形成接触器或粘合剂元件。 粘合元件用于将探针接触器基板粘合到空间变换器基板。

    PROBE FOR TESTING SEMICONDUCTOR DEVICES
    15.
    发明申请
    PROBE FOR TESTING SEMICONDUCTOR DEVICES 审中-公开
    用于测试半导体器件的探针

    公开(公告)号:WO2008127801A2

    公开(公告)日:2008-10-23

    申请号:PCT/US2008/055835

    申请日:2008-03-04

    CPC classification number: G01R1/06733 G01R1/06727 G01R3/00

    Abstract: A novel probe design is presented that increases a probe tolerance to stress fractures. Specifically, what is disclosed are three features increase stress tolerance. These features include a various union angle interface edge shapes, pivot cutouts and buffers.

    Abstract translation: 提出了一种新的探针设计,增加了对应力骨折的探针耐受性。 具体来说,公开的是增加压力容忍度的三个特征。 这些特征包括各种联合角度界面边缘形状,枢轴切口和缓冲区。

    LATERAL INTERPOSER CONTACT DESIGN AND PROBE CARD ASSEMBLY
    16.
    发明申请
    LATERAL INTERPOSER CONTACT DESIGN AND PROBE CARD ASSEMBLY 审中-公开
    横向插座联系设计和探针卡组件

    公开(公告)号:WO2008069967A2

    公开(公告)日:2008-06-12

    申请号:PCT/US2007/024631

    申请日:2007-11-30

    Abstract: The present invention is directed to an interposer having an interposer substrate with an upper surface and a lower surface and at least one resilient contact element having an upper portion and a lower portion. The upper portion extends in a substantially vertical fashion above the upper surface of said interposer substrate, and the lower portion extends in a substantially vertical fashion below the lower surface of said interposer substrate. The upper and lower portions of the resilient contact element are substantially resilient in a direction parallel to the substrate.

    Abstract translation: 本发明涉及具有具有上表面和下表面的插入件基板和至少一个具有上部和下部的弹性接触元件的插入件。 上部部分以大致垂直的方式在所述插入器基板的上表面上方延伸,并且下部部分以基本垂直的方式延伸到所述插入器基板的下表面的下方。 弹性接触元件的上部和下部在平行于基底的方向上基本上具有弹性。

    EXCESS OVERDRIVE DETECTOR FOR PROBE CARDS
    17.
    发明申请
    EXCESS OVERDRIVE DETECTOR FOR PROBE CARDS 审中-公开
    用于探针卡的超大型检测器

    公开(公告)号:WO2007102847A2

    公开(公告)日:2007-09-13

    申请号:PCT/US2006/037771

    申请日:2006-09-26

    CPC classification number: G01R31/2891 G01R1/06794 G01R1/07342

    Abstract: A novel structure for a probe card that comprises a deformable metal or other deformable material for detecting excess overdrive and a method for using the same are disclosed. This detection structure may be positioned on the substrate along the bending path of the probe, such that should the probe experience excess overdrive, then the detection structure will permanently deform where it is hit by any portion of the probe. Alternatively, the detection structure may be embedded in the substrate, and may also function as a fiducial for alignment detection. Inspection of the probe card, and specifically the detection structure, will reveal whether any probe has experienced excess overdrive. Should the inspection reveal that certain regions of the card experienced excess overdrive, this may indicate a planarity problem that affects production line yield.

    Abstract translation: 公开了一种用于探针卡的新型结构,其包括用于检测过量过载的可变形金属或其它可变形材料及其使用方法。 该检测结构可以沿着探针的弯曲路径定位在基底上,使得如果探针经受多余的过度传播,则检测结构将在被探针的任何部分撞击的地方永久地变形。 或者,检测结构可以嵌入在基板中,并且还可以用作对准检测的基准。 探针卡的检查,特别是检测结构,将揭示任何探头是否经历过度过载。 如果检查显示卡的某些区域经历过多的过度驱动,这可能表示影响生产线产量的平面问题。

    PROBE HEAD WITH MACHINED MOUNTING PADS AND METHOD OF FORMING SAME
    18.
    发明申请
    PROBE HEAD WITH MACHINED MOUNTING PADS AND METHOD OF FORMING SAME 审中-公开
    具有机械安装垫的探头及其形成方法

    公开(公告)号:WO2007092174A1

    公开(公告)日:2007-08-16

    申请号:PCT/US2007/002131

    申请日:2007-01-26

    CPC classification number: G01R1/07307 G01R31/2889

    Abstract: A probe head for testing semiconductor wafers has a probe contactor substrate have a first side and a second side. A plurality of probe contactor tips are coupled to the first side and the plurality of tips lie in a first plane. A plurality of mounting structures are coupled to the second side with each of the mounting structures each having a top surface lying in a second plane, wherein the first plane is substantially parallel to the second plane.

    Abstract translation: 用于测试半导体晶片的探针头具有第一侧和第二侧的探针接触器衬底。 多个探针接触器尖端联接到第一侧并且多个尖端位于第一平面中。 多个安装结构联接到第二侧,每个安装结构各自具有位于第二平面中的顶表面,其中第一平面基本上平行于第二平面。

    A SUPERFILLING SECONDARY METALLIZATION PROCESS IN MEMS FABRICATION
    19.
    发明申请
    A SUPERFILLING SECONDARY METALLIZATION PROCESS IN MEMS FABRICATION 审中-公开
    MEMS制造中的超级二次金属化过程

    公开(公告)号:WO2011059831A3

    公开(公告)日:2011-09-01

    申请号:PCT/US2010054793

    申请日:2010-10-29

    Inventor: LEAVY MONTRAY

    CPC classification number: C25D1/003 B32B15/01 C25D3/38

    Abstract: Processes are provided herein for the fabrication of MFMS utilizing both a primary metal that is integrated into the final MEMS structure and a sacrificial secondary metal that provides structural support for the primary metal component during machining More specifically, techniques are disclosed to increase the rate of secondary metal deposition between primary metal features in order to prevent voiding in the sacrificial secondary metal and thus enhance structural support of the primary metal during machining.

    Abstract translation: 本文提供的方法用于利用集成到最终MEMS结构中的主金属和在加工期间为主要金属部件提供结构支撑的牺牲二次金属制造MFMS更具体地,公开了增加次级的速率的技术 金属沉积在主金属特征之间以防止牺牲二次金属中的空隙,从而增强在加工过程中初级金属的结构支撑。

    MULTI MATERIAL SECONDARY METALLIZATION SCHEME IN MEMS FABRICATION
    20.
    发明申请
    MULTI MATERIAL SECONDARY METALLIZATION SCHEME IN MEMS FABRICATION 审中-公开
    MEMS制造中的多材料二次金属化方案

    公开(公告)号:WO2011059827A2

    公开(公告)日:2011-05-19

    申请号:PCT/US2010054766

    申请日:2010-10-29

    Inventor: LEAVY MONTRAY

    CPC classification number: C23C28/02 B32B15/01 Y10T428/12229

    Abstract: Processes are provided herein for the fabrication of MEMS utilizing both a primary metal that is integrated into the final MEMS structure and two or more sacrificial secondary metals that provide structural support for the primary metal component during machining. A first secondary metal is thinly plated around the primarj metal and over the entire surface of the substrate without using photolithography. A second secondary metal, is then thickly plated over the deposited first secondary metal without using photolithography. Additionally, techniques are disclosed to increase the deposition rate of the first secondary metal between primary metal features in order to prevent voiding and thus enhance structural support of the primary metal during machining.

    Abstract translation: 本文提供了用于利用集成到最终MEMS结构中的主金属和在加工期间为主金属部件提供结构支撑的两个或更多个牺牲二次金属来制造MEMS的工艺。 第一二次金属在基底金属周围薄薄地镀覆在衬底的整个表面上,而不使用光刻。 然后将第二二次金属在不使用光刻的情况下在沉积的第一二次金属上进行厚电镀。 此外,公开了增加第一二次金属在主金属特征之间的沉积速率以防止空隙并由此增强在加工期间主金属的结构支撑的技术。

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