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公开(公告)号：KR101814111B1
公开(公告)日：2018-01-02
申请号：KR1020110088323
申请日：2011-09-01
Applicant: 고려대학교 산학협력단
CPC classification number: Y02P70/521
Abstract: 본발명에서는리본스트링법으로실리콘웨이퍼를제조하는방법에있어서, 도가니에벌크(bulk) 상태의실리콘이용융된융액을공급하는단계; 상기도가니에스트링을통과시키고, 스트링사이에단결정실리콘시드층을용융된실리콘과접촉시키는단계; 상기스트링을끌어올려이동시켜스트링사이에리본결정을형성하는단계; 및상기형성된리본결정에서스트링을제거하는단계;를포함하는대면적의단결정실리콘웨이퍼제조방법이제공된다.
Abstract translation: 在本发明中，该方法包括在本体（本体）在用于制造硅晶片作为串带的制造方法的方法中，坩埚中的硅熔融液的熔融状态的供应; 将绳穿过坩埚并使单晶硅籽晶层与绳之间的熔融硅接触; 将琴弦向上拉，在弦之间形成带状晶体; 本发明还提供了一种制造具有大面积的单晶硅晶片的方法。
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公开(公告)号：KR101338642B1
公开(公告)日：2013-12-06
申请号：KR1020120034212
申请日：2012-04-03
Applicant: 고려대학교 산학협력단
IPC: H01L31/042 , H01L31/18
CPC classification number: Y02E10/50 , Y02P70/521
Abstract: 결정질 실리콘 태양 전지의 제조 방법에 있어서, 제1 타입의 불순물을 내부로 도핑하여, 중심 영역 및 중심 영역을 둘러싸는 주변 영역으로 구획되는 결정질 실리콘 기판을 준비한 후, 결정질 실리콘 기판의 양 표면들에 제1 타입에 대응되는 제2 타입의 불순물을 도핑하여, 결정질 실리콘 기판의 상부 표면에 제1 도핑층 및 제2 도핑층을 형성하고, 결정질 실리콘 기판 상부에, 결정질 실리콘층과 전기적으로 연결된 전면 전극을 형성한다. 주변 영역에 마스크의 프레임을 배치하여 결정질 실리콘 기판 하부에 마스크를 이용하여 도전성페이스트를 인쇄하여 금속층 구조물을 형성하고, 주변 영역에 해당하는 결정질 실리콘 기판의 하부 표면에 제1 타입의 불순물을 도핑하여 제3 도핑층을 형성한 후, 금속층 구조물을 열처리하여, 결정질 실리콘 기판의 하부 표면에 후면 전계 효과층 및 후면 전극을 형성한다.
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公开(公告)号：KR1020130069678A
公开(公告)日：2013-06-26
申请号：KR1020130050291
申请日：2013-05-03
Applicant: 고려대학교 산학협력단
CPC classification number: Y02E10/50 , Y02P70/521 , H01L31/04 , H01L31/18
Abstract: PURPOSE: The method of making a solid battery doped layer by using the solid phase epitaxy skips removal of PSG (PhosphoSilicate Glass) and edge isolation process because in the process of the electro plasticity emitter or all electro fields are made simultaneously. CONSTITUTION: Crystalline structure substrate is ready (S110). Above Crystalline structure substrate gets textured (S120). A amorphous layer of doped with impurities on the all surface of Crystalline structure substrate is evaporated (S130). An anti-reflection coating is evaporated on the surface of amorphous silicon layer that is doped with the above impurities (S140). Metal pastes are printed on the all surface of the above Crystalline structure substrate (S150) (S160). The above results become plastic simultaneously (S170). In the step of the above plasticity, the amorphous layer doped with the above impurities become solid phase according to plasticity, and the emitter or all the electro field is formed by expanding the impurities of above the amorphous layer to Crystalline structure substrate (S170). [Reference numerals] (S110) Prepare crystalline silicon substrate; (S120) Texturing; (S130) Deposit an amorphous silicon layer doped with impurities; (S140) Deposit an antireflection layer; (S150) Print metal paste in the front of a silicon substrate; (S160) Print metal paste in the rear of a silicon substrate; (S170) Simultaneous plasticity
Abstract translation: 目的：通过使用固相外延制作固体电池掺杂层的方法跳过PSG（磷酸硅玻璃）和边缘分离工艺，因为在电塑发射体或所有电场的过程中同时进行。 结构：晶体结构基材准备就绪（S110）。 以上结晶结构基材变质（S120）。 在晶体结构基底的所有表面上掺杂杂质的非晶层被蒸发（S130）。 在掺杂有上述杂质的非晶硅层的表面上蒸发防反射涂层（S140）。 将金属糊印刷在上述结晶结构基板的所有表面上（S150）（S160）。 上述结果同时变为塑性（S170）。 在上述可塑性的步骤中，掺杂有上述杂质的非晶层根据塑性变为固相，并且通过将非晶层之上的杂质膨胀至结晶结构基底而形成发射极或全部电场（S170）。 [参考号]（S110）准备晶体硅基板; （S120）纹理; （S130）沉积掺杂杂质的非晶硅层; （S140）沉积抗反射层; （S150）在硅衬底的前面印刷金属膏; （S160）在硅基板的背面印刷金属糊料; （S170）同时塑性
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公开(公告)号：KR1020130025046A
公开(公告)日：2013-03-11
申请号：KR1020110088323
申请日：2011-09-01
Applicant: 고려대학교 산학협력단
CPC classification number: Y02P70/521 , C30B15/34 , C30B15/08 , C30B15/14 , C30B15/36 , C30B35/00 , H01L31/18
Abstract: PURPOSE: A method for manufacturing a single crystal silicon wafer of a large area is provided to reduce manufacturing costs by not performing a cutting process after a ribbon crystal is grown. CONSTITUTION: Bulk type silicon melt is supplies to a crucible. A string(15) passes through the crucible. A single crystal silicon seed layer(17) is contacted with the silicon melt between the strings. A ribbon crystal is formed between the strings by moving the string. The string is removed from the ribbon crystal.
Abstract translation: 目的：提供大面积制造单晶硅晶片的方法，以便在生长带状晶体之后不进行切割处理来降低制造成本。 构成：散装型硅熔体供应到坩埚。 弦（15）穿过坩埚。 单晶硅种子层（17）与串之间的硅熔体接触。 通过移动弦线，在弦之间形成带状晶体。 将串从带状晶体中取出。
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公开(公告)号：KR1020130008918A
公开(公告)日：2013-01-23
申请号：KR1020110069607
申请日：2011-07-13
Applicant: 고려대학교 산학협력단
IPC: H01L31/05
Abstract: PURPOSE: A mixed type solar cell module is provided to prevent the lateral contact of an inter-connector ribbon and a hardening phenomenon and to improve the efficiency of electricity generation. CONSTITUTION: An inter-connector ribbon(5) connects solar cells. A p-type silicon solar cell and an n-type silicon solar cell are connected to the solar cells. The n-type silicon solar cell is laminated on the p-type silicon solar cell. The p-type silicon solar cell is laminated on the n-type silicon solar cell. The inter-connector ribbon connects the front electrode of the p-type silicon solar cell to the front electrode of the n-type silicon solar cell.
Abstract translation: 目的：提供一种混合型太阳能电池模块，以防止连接器间带的横向接触和硬化现象，并提高发电效率。 构成：连接器之间的连接带（5）连接太阳能电池。 p型硅太阳能电池和n型硅太阳能电池连接到太阳能电池。 n型硅太阳能电池层压在p型硅太阳能电池上。 p型硅太阳能电池层压在n型硅太阳能电池上。 连接器间带将p型硅太阳能电池的前电极连接到n型硅太阳能电池的前电极。
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Patent Agency Ranking
公开(公告)号：KR101144256B1
公开(公告)日：2012-05-10
申请号：KR1020100106998
申请日：2010-10-29
Applicant: 고려대학교 산학협력단
IPC: H01L31/04 , H01L31/0224
CPC classification number: Y02E10/50
Abstract: PURPOSE: A method for manufacturing a back side electrode of a solar battery is provided to improve photo-electricity conversion efficiency by forming a back surface field in the back side electrode total area and reducing back side recombination. CONSTITUTION: A back surface field(20) is formed in the back side electrode total area of a silicon wafer(50). The silicon wafer is single crystal or poly-crystal. A back side electrode layer(10) is formed in the whole of the base side of the back surface field. A surface reformed back side electrode layer(30) is formed in the whole of the base side of the back surface field. The surface reformed back side electrode layer is formed by injecting and evaporating a metal plasma ion to the back side electrode layer. An ion source of the metal plasma ion comprises at least one among Ag, Cu, and Au.
Abstract translation: 目的：提供一种用于制造太阳能电池的背面电极的方法，以通过在背面电极总面积中形成背面场并减少背面复合来提高光电转换效率。 构成：在硅晶片（50）的背面电极总面积上形成背面场（20）。 硅晶片是单晶或多晶体。 背面电极层（10）形成在背面场的整个基底侧。 在后表面场的整个基底侧形成有表面改性背面电极层（30）。 表面改性背面电极层通过将金属等离子体离子注入并蒸发到后侧电极层而形成。 金属等离子体离子的离子源包括Ag，Cu和Au中的至少一种。
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公开(公告)号：KR101113503B1
公开(公告)日：2012-02-29
申请号：KR1020090104608
申请日：2009-10-30
Applicant: 고려대학교 산학협력단
IPC: H01L31/04
CPC classification number: Y02E10/50
Abstract: 본 발명은 유도전류 장치를 이용한 실리콘 태양전지의 제조 방법에 관한 것으로, 제1 타입 결정질 실리콘 기판 상부에 에미터가 되는 제2 타입 실리콘층을 형성하는 단계와, 상기 제2 타입 실리콘층 상부에 패시베이션막 또는 반사방지막을 형성하는 단계와, 상기 패시베이션막 또는 반사방지막 상부에 전면 금속전극을 형성하고, 상기 제1 타입 결정질 실리콘 기판 하부에 후면 금속전극을 순차적으로 형성하는 단계와, 유도전류 장치를 이용하여 상기 전면 금속전극에 선택적으로 열처리(Firing)하는 단계 및 상기 제1 타입 결정질 실리콘 기판 하부에 후면금속전극 접촉 및 후면전계를 형성하는 단계를 제공하는 발명에 관한 것이다.
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公开(公告)号：KR1020120015038A
公开(公告)日：2012-02-21
申请号：KR1020100077246
申请日：2010-08-11
Applicant: 고려대학교 산학협력단
CPC classification number: H01L31/022425 , C23F13/20 , H01L31/0201 , H01L31/0512 , Y02E10/50
Abstract: PURPOSE: A photovoltaic module having corrosion resistance is provided to minimize the reduction of a current and a voltage by preventing serial resistance from increasing at a spot where a ribbon and a cell are connected. CONSTITUTION: An interconnector ribbon(4) connects cells in a solar cell(3). An anode for a protection method is attached on the interconnector ribbon. The interconnector ribbon is made of a copper electrode which is coated with a SN-PB(Stannum-Plumbum) alloy. The anode for the protection method is a sacrificial anode. The sacrificial anode is a metal having bigger ionization tendency than the interconnector ribbon.
Abstract translation: 目的：提供具有耐腐蚀性的光伏模块，以通过防止串联电阻在带状和电池连接的位置增加而最小化电流和电压的降低。 构成：连接器带（4）连接太阳能电池（3）中的电池。 用于保护方法的阳极安装在互连器带上。 连接器带由涂覆有SN-PB（锡 - 铅）合金的铜电极制成。 用于保护方法的阳极是牺牲阳极。 牺牲阳极是比互连器带具有更大电离倾向的金属。
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公开(公告)号：KR101884087B1
公开(公告)日：2018-07-31
申请号：KR1020160150199
申请日：2016-11-11
Applicant: 고려대학교 산학협력단
IPC: H01L31/0224 , H01L31/02 , H01L31/042
CPC classification number: H01L31/02 , H01L31/0224 , H01L31/042 , Y02E10/50
Abstract: 본발명은태양전지의전면전극에관한것으로, 본발명의실시예에따른태양전지의전면전극은 n형반도체기판(1)의수광면에배치되는태양전지의전면전극에있어서, 원형또는다각형도트(dot) 형상으로형성되고, 서로이격배치되는다수의금속도트(10), 및금속도트(10)를가로질러, 적어도 2개이상의금속도트(10)를서로연결하는다수의금속와이어(20)를포함한다.
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公开(公告)号：KR1020120119042A
公开(公告)日：2012-10-30
申请号：KR1020110036766
申请日：2011-04-20
Applicant: 고려대학교 산학협력단
IPC: H01L31/073 , H01L31/0445 , H01L31/18
CPC classification number: Y02E10/543 , Y02P70/521
Abstract: PURPOSE: A CdS/CdTe thin film solar cell from which a pin hole is removed and a manufacturing method thereof are provided to remove a pin hole for re-coupling carriers generated inside a solar cell and to increase a photo-converter of a solar cell by removing the pin hole. CONSTITUTION: A transparent conductive oxide film is evaporated on a substrate. A CdS(Cadmium Sulfide) thin film is evaporated on the transparent conductive oxide film. A CdTe(Cadmium Telluride) thin film is evaporated on the CdS thin film. A second CdTe thin film is formed in a pin hole. [Reference numerals] (AA) Pin hole
Abstract translation: 目的：提供去除针孔的CdS / CdTe薄膜太阳能电池及其制造方法，以去除用于重新耦合在太阳能电池内产生的载流子的针孔，并增加太阳能电池的光转换器 通过移除针孔。 构成：透明导电氧化膜在基片上蒸发。 在透明导电氧化膜上蒸发CdS（硫化镉）薄膜。 在CdS薄膜上蒸发CdTe（碲化镉）薄膜。 在针孔中形成第二CdTe薄膜。 （附图标记）（AA）针孔
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