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公开(公告)号：KR101652339B1
公开(公告)日：2016-08-31
申请号：KR1020130020469
申请日：2013-02-26
Applicant: 국민대학교산학협력단
IPC: H01L21/027
Abstract: 본원은, 자기조립단분자막에의하여처리된몰드를이용한패턴형성방법에관한것으로서, 기재에포토레지스트를도포하는단계; 패턴된몰드에자기조립단분자막을형성하는단계; 상기자기조립단분자막이형성된몰드와상기포토레지스트가도포된기재를가압하여접촉하는단계; 및, 상기포토레지스트를경화시키는단계를포함한다.
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公开(公告)号：KR101598827B1
公开(公告)日：2016-03-03
申请号：KR1020130021467
申请日：2013-02-27
Applicant: 국민대학교산학협력단
IPC: H01L21/027
Abstract: 본원은, 비접촉방법을이용한미세구조물의선택적패턴형성방법에관한것으로서, 기재에용매및 전사물질을함유한용액을도포하는단계; 및, 상기기재를패턴된몰드와접촉시켜, 상기기재에도포된용액중 용매만이상기몰드에선택적으로흡수되어상기기재상에상기전사물질을잔류시키는단계를포함한다.
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公开(公告)号：KR101574133B1
公开(公告)日：2015-12-03
申请号：KR1020140042364
申请日：2014-04-09
Applicant: 국민대학교산학협력단
IPC: G02B5/02 , G02F1/1335
Abstract: 본원은광학시트, 상기광학시트가도광판의일측면에형성된백라이트유닛, 및상기백라이트유닛의제조방법을제공한다.
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公开(公告)号：KR1020150034332A
公开(公告)日：2015-04-03
申请号：KR1020130114257
申请日：2013-09-26
Applicant: 국민대학교산학협력단
IPC: G01L1/14 , H01L41/193 , H01L41/45 , G01G7/06
CPC classification number: G01L1/14 , G01G7/06 , H01L41/193 , H01L41/45
Abstract: 본원은대전된기재상에형성된제 1 전극; 상기제 1 전극에대향배치되는제 2 전극; 상기제 1 전극및 상기제 2 전극사이에복수층으로형성된유기물층; 및, 상기유기물층상에형성된, 전도성물질및 고분자물질을함유하는혼합물층을포함하는압력센서, 및그의제조방법을제공한다.
Abstract translation: 提供一种压力传感器及其制造方法，其包括：形成在带电衬底上的第一电极; 与第一电极相对布置的第二电极; 形成在第一电极和第二电极之间的多个层中的有机材料层; 以及在包含导电材料和聚合材料的有机材料层上形成的混合层。
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公开(公告)号：KR1020140108438A
公开(公告)日：2014-09-11
申请号：KR1020130021467
申请日：2013-02-27
Applicant: 국민대학교산학협력단
IPC: H01L21/027
CPC classification number: H01L21/0273 , B41J2/17
Abstract: The present invention relates to a method for forming a selective pattern of a fine structure using a non-contact printing method, comprising a step for applying solution containing a solvent and a transfer material, to a base material; and a step for leaving the transfer material on the base material as only the solvent from the solution applied on the base material is selectively absorbed into the mold, by contacting the base material with a patterned mold.
Abstract translation: 本发明涉及一种使用非接触印刷法形成精细结构的选择性图案的方法，包括将含有溶剂和转印材料的溶液涂布到基材上的步骤; 以及通过使基材与图案化模具接触，仅将来自施加在基材上的溶液的溶剂选择性地吸收到模具中，将转印材料留在基材上。
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Patent Agency Ranking
公开(公告)号：KR1020140108394A
公开(公告)日：2014-09-11
申请号：KR1020130020469
申请日：2013-02-26
Applicant: 국민대학교산학협력단
IPC: H01L21/027
CPC classification number: H01L21/0273 , G03F7/2012
Abstract: The present invention relates to a method for forming a pattern using a mold treated by a self-assembled monomolecular film, comprising a step for applying photoresist to base material; a step for forming a self-assembled monomolecular film on a patterned mold; a step for contacting the mold where the self-assembled monomolecular film is formed, and the base material where the photoresist is applied, by pressurizing the same; and a step for hardening the photoresist.
Abstract translation: 本发明涉及使用由自组装单分子膜处理的模具形成图案的方法，其包括将光致抗蚀剂施加于基材的步骤; 在图案化模具上形成自组装单分子膜的步骤; 使形成有自组装单分子膜的模具与通过对其施加光致抗蚀剂的基材进行加压的步骤; 以及使光致抗蚀剂硬化的步骤。
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公开(公告)号：KR1020140101497A
公开(公告)日：2014-08-20
申请号：KR1020130014498
申请日：2013-02-08
Applicant: 국민대학교산학협력단
IPC: H01L21/027
CPC classification number: H01L21/0274 , B32B15/08 , B32B18/00 , B32B27/06
Abstract: The present invention relates to a patterning method of a transferring material having a porous structure, comprising the steps of: adsorbing a transferring material to a mold; applying a solution to a substrate; expanding a mold by allowing the mold to adsorb the solution by bringing the solution applied to the substrate in contact with the transferring material adsorbed to the mold; and making the transferring material of the mold adsorbed to the substrate.
Abstract translation: 本发明涉及具有多孔结构的转印材料的图案化方法，包括以下步骤：将转印材料吸附到模具中; 将溶液施加到基底上; 通过使得模具通过使施加到基板上的溶液与吸附在模具上的转印材料接触而使模具吸附溶液; 并使模具的转印材料吸附到基板上。
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18.发明授权이종 금속 나노크리스탈을 포함하는 플로팅 게이트, 그의 제조 방법 및 상기 플로팅 게이트를 포함하는 반도체 디바이스 有权浮选门，包括异构纳米晶体，其制造方法和具有该纳米晶体的半导体器件
公开(公告)号：KR101318823B1
公开(公告)日：2013-10-16
申请号：KR1020110040495
申请日：2011-04-29
Applicant: 국민대학교산학협력단
IPC: H01L21/8247 , H01L27/115
Abstract: 본원은 반도체 디바이스용 신규 플로팅 게이트, 그의 제조 방법 및 상기 플로팅 게이트를 포함하는 반도체 디바이스에 관한 것이다.
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公开(公告)号：KR1020120036293A
公开(公告)日：2012-04-17
申请号：KR1020110102496
申请日：2011-10-07
Applicant: 국민대학교산학협력단
IPC: G02B6/00 , G02B5/02 , G02F1/13357
CPC classification number: G02B6/0065 , B29D11/00788 , G02B5/0268 , G02B6/003 , G02B6/0036 , G02F1/133615
Abstract: PURPOSE: A backlight light guide plate and a manufacturing method thereof are provided to omit a manufacturing process of a special mold which has a flexible region. CONSTITUTION: An optical sheet(100) comprises a transparent substrate(10) and a micro lens(20). The micro lens has a regular truncated pyramid shape with a repetitive embossed pattern which is formed on one side surface of the transparent substrate. The transparent substrate is made of a transparent material. The width of the regular truncated pyramid shape with the repetitive embossed pattern is decreased along a vertical direction with respect to one side surface of the transparent substrate. The micro lens of the regular truncated pyramid shape is successively arranged parallel to each other.
Abstract translation: 目的：提供一种背光导光板及其制造方法，以省略具有柔性区域的特殊模具的制造工艺。 构成：光学片（100）包括透明基片（10）和微透镜（20）。 微透镜具有形状在透明基板的一个侧表面上的重复压纹图案的规则的截头棱锥形状。 透明基材由透明材料制成。 具有重复压纹图案的规则截棱锥形状的宽度相对于透明基板的一个侧表面沿垂直方向减小。 规则截棱锥形的微透镜相互平行地连续布置。
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公开(公告)号：KR1020100120939A
公开(公告)日：2010-11-17
申请号：KR1020090039824
申请日：2009-05-07
Applicant: 국민대학교산학협력단 , 한양대학교 산학협력단
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L21/26
Abstract: PURPOSE: A manufacturing method of a thin film transistor is provided to inexpensively improve the electrical property of a thin film transistor by executing an ultraviolet irradiation process instead of a thermal processing process in an oxide semiconductor active layer. CONSTITUTION: A gate electrode(110) is formed on a substrate(100). A gate insulating layer(120) is formed on the substrate. A semiconductor active layer(130) is formed on the gate insulating layer. An ultraviolet ray is irradiated onto the semiconductor active layer. A source/drain electrode is formed on the semiconductor active layer.
Abstract translation: 目的：提供薄膜晶体管的制造方法，通过在氧化物半导体活性层中执行紫外线照射处理而不是热处理工艺来廉价地提高薄膜晶体管的电性能。 构成：在基板（100）上形成栅电极（110）。 在基板上形成栅极绝缘层（120）。 半导体有源层（130）形成在栅极绝缘层上。 紫外线照射到半导体活性层上。 源极/漏电极形成在半导体有源层上。
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