公开(公告)号：KR1020080035485A

公开(公告)日：2008-04-23

申请号：KR1020070104986

申请日：2007-10-18

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 도미따마사히꼬 ,  우메자와고오따 ,  손량 ,  니시무라도시하루

IPC: H01L21/205

CPC classification number: C23C16/4405 ,  H01L21/67109

Abstract: A method for using a semiconductor processing apparatus is provided to reduce the quantity of metal contamination by performing a process for removing a byproduct layer after a film forming treatment is performed by a predetermined number of times and by performing a cleaning process. A substrate to be processed is received in a process receptacle(4). A heater heats the inside of the process receptacle. An exhaust system exhausts the inside of the process receptacle. A main process gas supplying system supplies main process gas for performing a semiconductor treatment to the surface of the substrate, installed in the process receptacle. An oxidative gas supplying system and a reductive gas supplying system supply oxidative gas and reductive gas for removing contaminants from the inner surface of the process receptacle, installed in the process receptacle. A control part controls the operation of a semiconductor processing apparatus, performing the following steps. The oxidative gas and reductive gas are supplied to the process receptacle in which the substrate is not received. In the process receptacle, the oxidative gas and the reductive gas are reacted under first circumstances where the oxidative gas and the reductive gas are activated so that an active species is generated. The contaminants are removed from the inner surface of the process receptacle by using the active species.

Abstract translation: 提供一种使用半导体处理装置的方法，通过在成膜处理进行预定次数之后执行除去副产物层的处理并进行清洗处理，来减少金属污染的量。 待处理的基板被接收在处理容器（4）中。 加热器加热过程容器的内部。 排气系统排出过程容器的内部。 主工艺气体供应系统为安装在过程容器中的基板表面提供用于执行半导体处理的主工艺气体。 氧化气体供应系统和还原气体供应系统提供氧化气体和还原气体，用于从安装在过程容器中的过程容器的内表面去除污染物。 控制部分控制半导体处理装置的操作，执行以下步骤。 将氧化性气体和还原性气体供给到不接收基板的处理容器。 在工艺容器中，氧化气体和还原气体在氧化性气体和还原性气体被激活的第一种情况下反应，从而产生活性物质。 污染物通过使用活性物质从处理容器的内表面除去。

公开(公告)号：KR1020050033820A

公开(公告)日：2005-04-13

申请号：KR1020040079308

申请日：2004-10-06

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 우메하라다까히또 ,  도미따마사히꼬 ,  후지따히로따께 ,  하세베가즈히데

IPC: H01L21/205 ,  H01L21/285 ,  H01L21/31 ,  H01L21/283

CPC classification number: H01L21/76876 ,  C23C16/18 ,  C23C16/40 ,  C23C16/45525 ,  C23C16/45546 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L28/65

Abstract: A film forming method and a film forming apparatus are provided to form a thin film without a sputtering apparatus by supplying alternately a raw material gas and an auxiliary gas to a process chamber. A raw material gas and an auxiliary gas are continuously supplied to a process chamber(14) in different periods in order to deposit thin films on an upper surface of a processing target(W). After the thin films are deposited on the upper surface of the processing target, the raw material gas and the same gas as the auxiliary gas or the raw material gas and a different gas from the auxiliary gas are simultaneously supplied to the process chamber in order to form a thick film of the thin films.

Abstract translation: 提供了一种成膜方法和成膜装置，以便通过交替地将原料气体和辅助气体供给到处理室，而不用溅射装置形成薄膜。 为了在处理对象（W）的上表面上沉积薄膜，原料气体和辅助气体以不同的时间周期连续供给到处理室（14）。 在薄膜沉积在加工对象的上表面之后，原料气体和与辅助气体相同的气体或原料气体以及与辅助气体不同的气体同时供给到处理室，以便 形成薄膜的薄膜。