公开(公告)号：KR101309930B1

公开(公告)日：2013-09-17

申请号：KR1020120137159

申请日：2012-11-29

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 도미따마사히꼬 ,  우메자와고오따 ,  손량 ,  니시무라도시하루

IPC: H01L21/205 ,  H01L21/02

CPC classification number: C23C16/4405 ,  H01L21/67109

Abstract: 반도체 처리용 처리 장치의 사용 방법은, 제품용 피처리 기판을 수용하지 않는 상기 처리 장치의 처리 용기 내에 산화성 가스 및 환원성 가스를 공급하는 공정과, 상기 처리 용기 내에 있어서, 상기 산화성 가스 및 상기 환원성 가스가 활성화하는 제1 환경하에서 상기 산화성 가스 및 상기 환원성 가스를 반응시켜 활성종을 발생시키는 공정과, 상기 활성종을 사용하여 상기 처리 용기의 상기 내면으로부터 오염 물질을 제거하는 공정을 포함한다.

Abstract translation: 使用用于半导体处理的处理设备的方法包括以下步骤：将氧化气体和还原气体供应到处理设备的处理容器中，该处理设备不包含待处理产品的基板; 在活化物质被活化的第一环境下使氧化气体和还原气体反应以产生活性物质;以及使用活性物质从处理容器的内表面去除污染物。

公开(公告)号：KR101139078B1

公开(公告)日：2012-04-30

申请号：KR1020080043927

申请日：2008-05-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오까다미쯔히로 ,  다까기사또시 ,  손량 ,  도미따마사히꼬 ,  도네가와야마또 ,  니시무라도시하루

IPC: H01L21/205

CPC classification number: B08B5/00 ,  C23C16/345 ,  C23C16/4405 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3185 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S438/905

Abstract: A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.

公开(公告)号：KR101243584B1

公开(公告)日：2013-03-20

申请号：KR1020070104986

申请日：2007-10-18

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 도미따마사히꼬 ,  우메자와고오따 ,  손량 ,  니시무라도시하루

IPC: H01L21/205

CPC classification number: C23C16/4405 ,  H01L21/67109

Abstract: 반도체 처리용 처리 장치의 사용 방법은, 제품용 피처리 기판을 수용하지 않는 상기 처리 장치의 처리 용기 내에 산화성 가스 및 환원성 가스를 공급하는 공정과, 상기 처리 용기 내에 있어서, 상기 산화성 가스 및 상기 환원성 가스가 활성화하는 제1 환경하에서 상기 산화성 가스 및 상기 환원성 가스를 반응시켜 활성종을 발생시키는 공정과, 상기 활성종을 사용하여 상기 처리 용기의 상기 내면으로부터 오염 물질을 제거하는 공정을 포함한다.
처리 용기, 웨이퍼 보트, 지지판, 지지 로드, 덮개, 밀봉 부재

公开(公告)号：KR1020130018210A

公开(公告)日：2013-02-20

申请号：KR1020120137159

申请日：2012-11-29

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 도미따마사히꼬 ,  우메자와고오따 ,  손량 ,  니시무라도시하루

IPC: H01L21/205 ,  H01L21/02

CPC classification number: C23C16/4405 ,  H01L21/67109

Abstract: PURPOSE: A semiconductor processing apparatus and a method for using the same, and a computer readable medium are provided to prevent metal contamination by performing a cleaning process after a film forming process is performed and byproducts are removed. CONSTITUTION: Semiconductor wafers(W) are loaded in a wafer boat(6). The wafer boat includes two supporting plates(6A) made of quartz and support rods(6B). The wafer boat moves up and down through the lower opening of a process basin(4). A gas supply device(28) supplies gas into the process basin. The gas supply device includes a source air system(30), a first reduction gas supply system(32), and a second reduction gas supply system(34). [Reference numerals] (44) Device control unit

Abstract translation: 目的：提供一种半导体处理装置及其使用方法，以及计算机可读介质，以在执行成膜处理并除去副产物之后通过执行清洁处理来防止金属污染。 构成：将半导体晶片（W）装载在晶片舟皿（6）中。 晶片舟包括由石英和支撑杆（6B）制成的两个支撑板（6A）。 晶片舟皿上下移动通过处理池（4）的下部开口。 气体供给装置（28）将气体供给到处理池中。 气体供给装置包括源空气系统（30），第一还原气体供给系统（32）和第二还原气体供给系统（34）。 （附图标记）（44）设备控制单元

公开(公告)号：KR1020080100784A

公开(公告)日：2008-11-19

申请号：KR1020080043927

申请日：2008-05-13

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오까다미쯔히로 ,  다까기사또시 ,  손량 ,  도미따마사히꼬 ,  도네가와야마또 ,  니시무라도시하루

IPC: H01L21/205

CPC classification number: B08B5/00 ,  C23C16/345 ,  C23C16/4405 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3185 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S438/905

Abstract: The film forming apparatus for processing the semiconductor and the method of using the same are provided to prevent the contamination of the film. The method of use of the film forming apparatus for the semiconductor processing is provided. A process is for setting up the reaction chamber of the film forming apparatus as the idle state which does not receive the processed substrate for product. A process is for performing the fuzzy treatment to remove the contaminant existing in the inner surface of the reaction chamber. The radicals are obtained by activating the fuzzy treatment gas including the oxygen and hydrogen. The radicals are activated in the inner surface of the reaction chamber.

Abstract translation: 提供了用于处理半导体的成膜装置及其使用方法，以防止膜的污染。 提供了用于半导体处理的成膜装置的使用方法。 一种方法是将成膜装置的反应室设置为不接收用于产品的处理衬底的空闲状态。 一个过程是进行模糊处理以去除存在于反应室内表面中的污染物。 通过激活包括氧和氢的模糊处理气体获得自由基。 自由基在反应室的内表面被活化。

公开(公告)号：KR1020080035485A

公开(公告)日：2008-04-23

申请号：KR1020070104986

申请日：2007-10-18

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 도미따마사히꼬 ,  우메자와고오따 ,  손량 ,  니시무라도시하루

IPC: H01L21/205

CPC classification number: C23C16/4405 ,  H01L21/67109

Abstract: A method for using a semiconductor processing apparatus is provided to reduce the quantity of metal contamination by performing a process for removing a byproduct layer after a film forming treatment is performed by a predetermined number of times and by performing a cleaning process. A substrate to be processed is received in a process receptacle(4). A heater heats the inside of the process receptacle. An exhaust system exhausts the inside of the process receptacle. A main process gas supplying system supplies main process gas for performing a semiconductor treatment to the surface of the substrate, installed in the process receptacle. An oxidative gas supplying system and a reductive gas supplying system supply oxidative gas and reductive gas for removing contaminants from the inner surface of the process receptacle, installed in the process receptacle. A control part controls the operation of a semiconductor processing apparatus, performing the following steps. The oxidative gas and reductive gas are supplied to the process receptacle in which the substrate is not received. In the process receptacle, the oxidative gas and the reductive gas are reacted under first circumstances where the oxidative gas and the reductive gas are activated so that an active species is generated. The contaminants are removed from the inner surface of the process receptacle by using the active species.

Abstract translation: 提供一种使用半导体处理装置的方法，通过在成膜处理进行预定次数之后执行除去副产物层的处理并进行清洗处理，来减少金属污染的量。 待处理的基板被接收在处理容器（4）中。 加热器加热过程容器的内部。 排气系统排出过程容器的内部。 主工艺气体供应系统为安装在过程容器中的基板表面提供用于执行半导体处理的主工艺气体。 氧化气体供应系统和还原气体供应系统提供氧化气体和还原气体，用于从安装在过程容器中的过程容器的内表面去除污染物。 控制部分控制半导体处理装置的操作，执行以下步骤。 将氧化性气体和还原性气体供给到不接收基板的处理容器。 在工艺容器中，氧化气体和还原气体在氧化性气体和还原性气体被激活的第一种情况下反应，从而产生活性物质。 污染物通过使用活性物质从处理容器的内表面除去。