公开(公告)号：KR1020100068209A

公开(公告)日：2010-06-22

申请号：KR1020090122623

申请日：2009-12-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미나미마사토 ,  사사키요시히코 ,  사사키가즈오

IPC: H01L21/205 ,  H01L21/02

CPC classification number: H01L21/67196 ,  H01J37/185

Abstract: PURPOSE: A vacuum processing device, a vacuum processing system, and a method of the same are provided to prevent the warpage of an object to be processed by spraying gas from a gas spraying hole towards the rear side of the object with a pre-set pressure. CONSTITUTION: A processing container(101) comprises openings(101a,101b) through which an object to be processed is transferred. A loading table(103) in the processing container supports the object. A gas supply source(111) supplies gas to the loading table. The main body of the loading table comprises a loading surface(F) on which the object is loaded. A gas spraying hole(103b) is formed in the loading surface. A gas flow path(107) is formed inside the main body of the loading table.

Abstract translation: 目的：提供真空处理装置，真空处理系统及其方法，以通过预先设定从气体喷射孔喷射气体朝向物体的后侧来防止被处理物体的翘曲 压力。 构成：处理容器（101）包括开口（101a，101b），待处理对象通过该开口传送。 处理容器中的装载台（103）支撑物体。 气体供给源（111）向装载台供给气体。 装载台的主体包括加载物体（F）的装载面（F）。 在装载面上形成气体喷射孔（103b）。 气体流路（107）形成在装载台的主体内部。

公开(公告)号：KR1020090128339A

公开(公告)日：2009-12-15

申请号：KR1020090051074

申请日：2009-06-09

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사사키요시히코 ,  미나미마사토

IPC: H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/67772 ,  H01L21/3065 ,  H01L21/67207 ,  H05H1/46

Abstract: PURPOSE: A chamber and a processing device are provided to perform transportation even when a limit of a transportation size is exceeded by detachably connecting a main body and a side plate. CONSTITUTION: A processing chamber(1a) is divided into a main body(2) of a rectangular shape and side plates(3a,3b). The main body opens one or more sides(2a~2d). The side plate is detachably mounted on the opened side of the main body. The main body has a rectangular box shape. An end part of the rectangular box is corresponded to the side. The main body comprises a closable upper cover.

Abstract translation: 目的：即使通过可拆卸地连接主体和侧板来超过运输尺寸的极限，也提供了一个室和一个处理装置来执行运输。 构成：处理室（1a）分为矩形的主体（2）和侧板（3a，3b）。 主体打开一个或多个侧面（2a〜2d）。 侧板可拆卸地安装在主体的开口侧上。 主体具有矩形盒形状。 矩形盒的端部对应于侧面。 主体包括可封闭的上盖。

公开(公告)号：KR1020080068572A

公开(公告)日：2008-07-23

申请号：KR1020080005316

申请日：2008-01-17

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사사키가즈오 ,  미나미마사토

IPC: H05H1/46 ,  H05H1/24 ,  H05H1/34

CPC classification number: H01J37/32532 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32568 ,  H05H1/46 ,  H05H2001/4645

Abstract: A plasma processing apparatus is provided to lower an exchange cost by exchanging a division electrode having a damaged part which is damaged by an abnormal discharge. A plasma processing apparatus includes a lower electrode, an upper electrode(41), an upper electrode base(42), a connection member, a fluid path(46), a gas supplying path, and a high frequency source(47). The lower electrode is installed inside a vessel. A substrate is mounted on the lower electrode. The upper electrode has a plurality of supply holes for supplying the processing gas on a substrate, and is installed on an opposite side to the lower electrode. The upper electrode base covers an upper side of the upper electrode. A diffusion space of a processing gas coupled to the gas supply hole is formed between the upper electrode and the upper side of the upper electrode. The contact member is installed inside a region which is covered by an inner circumference plane of the upper electrode base. The contact member contacts the upper plane of the upper electrode with a low plane of the upper electrode base. The fluid path is installed inside the upper electrode base, and passes a temperature adjusting fluid to adjust the temperature of the upper electrode. The gas supply path is installed inside the upper electrode base, and introduce a processing gas to the diffusion space. The high frequency power source is provided to process the processing gas into plasma by supplying a high frequency power between the upper electrode and the lower electrode.

Abstract translation: 提供了一种等离子体处理装置，通过交换具有由异常放电损坏的损坏部分的分割电极来降低交换成本。 等离子体处理装置包括下电极，上电极（41），上电极基座（42），连接构件，流体路径（46），气体供给路径和高频源（47）。 下电极安装在容器内。 衬底安装在下电极上。 上部电极具有用于将处理气体供给到基板上的多个供给孔，并且安装在与下部电极相反的一侧。 上电极基座覆盖上电极的上侧。 在上部电极和上部电极的上侧之间形成有与气体供给孔连接的处理气体的扩散空间。 接触构件安装在被上电极基座的内周面覆盖的区域内。 接触构件与上电极基座的低平面接触上电极的上平面。 流体路径安装在上部电极基体的内部，通过温度调节用流体调节上部电极的温度。 气体供给路径安装在上部电极基体内部，并且向扩散空间引入处理气体。 提供高频电源以通过在上电极和下电极之间提供高频电力来将处理气体处理成等离子体。

公开(公告)号：KR102205912B1

公开(公告)日：2021-01-20

申请号：KR1020190072068

申请日：2019-06-18

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미나미마사토 ,  사사키요시히코

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: 기판에플라스마처리를실시하는플라스마처리장치에있어서, 챔버내에, 처리가스를공급하는샤워헤드는, 처리가스를토출하는복수의가스토출구멍을갖는본체부와, 본체부내에마련되고, 처리가스가도입되어, 복수의가스토출구멍에연통되는가스확산공간을구비하고, 본체부는, 금속으로이루어지는기재와, 기재에끼움삽입되고, 복수의가스토출구멍을규정하는복수의슬리브와, 기재의가스확산공간에접하는면에, 처리가스에대한내식성을갖는재료를용사하여형성되고, 함침재가함침된제1 용사피막과, 기재의상기챔버의플라스마생성공간에접하는면에, 처리가스의플라스마에대한내플라스마성을갖는재료를용사하여형성되고, 함침재가함침된제2 용사피막을갖는다.

公开(公告)号：KR102203551B1

公开(公告)日：2021-01-14

申请号：KR1020190021038

申请日：2019-02-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미나미마사토 ,  마치야마와타루

IPC: H01L21/687 ,  H01J37/32 ,  H05H1/46

Abstract: 기판의이면과적재대의사이에부착되는퇴적물을저감시킨다. 기판적재구조체(130)는적재대(150)와, 포커스링(131)과, 지지부재(132)를구비한다. 포커스링(131)은, 기판 W가적재되는적재대(150)의적재면(152a)을둘러싸면서또한적재면(152a)보다도낮은위치에배치된다. 지지부재(132)는, 포커스링(131)의하측에배치되고, 포커스링(131)을지지한다. 또한, 포커스링(131)은, 상부링 부재(131a)와, 하부링 부재(131b)를갖는다. 하부링 부재(131b)는, 포커스링(131)의하부를구성하고, 지지부재(132)를덮는다. 상부링 부재(131a)는, 포커스링(131)의상부를구성하고, 적재대(150)측의측면(1310)의적어도일부와적재대(150)의측면의사이의거리가, 하부링 부재(131b)의적재대(150)측의측면(1311)과적재대(150)의측면의사이의거리보다도길다.

公开(公告)号：KR102013070B1

公开(公告)日：2019-08-21

申请号：KR1020180067123

申请日：2018-06-12

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미나미마사토 ,  사사키요시히코

IPC: H01J37/32

公开(公告)号：KR101755768B1

公开(公告)日：2017-07-07

申请号：KR1020140129974

申请日：2014-09-29

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 도조도시히로 ,  사사키가즈오 ,  미나미마사토

IPC: H05H1/46 ,  H01L21/205 ,  H01L21/3065

Abstract: 플라즈마처리장치에있어서, 처리용기의관통개구부에서의국소적플라즈마의발생을방지한다. 처리용기의관통개구부의개구바닥면에는, 임피던스조정부재로서의절연부재(45)가설치되어있다. 절연부재(45)는비유전율이 10 이하, 바람직하게는 4 이하인재료에의해서구성되어있고, 절연부재(45)에의해서플라즈마로부터본 관통개구부의전기임피던스를, 본체용기(2A)의라이너(60)보다크게해서, 게이트개구부(41)에있어서의국소적플라즈마의발생을방지할수 있다. 절연부재(45) 위에는커버부재(47)를마련하고, 절연부재(45)의표면을덮음으로써, 절연부재(45)를플라즈마에의한손상으로부터보호할수 있다.

Abstract translation: 在等离子体处理装置中，防止了在处理容器的通孔处产生局部等离子体。 作为阻抗调整部件的绝缘部件（45）设置在处理容器的贯通孔的开口的底面上。 绝缘构件45具有10或更小，优选为4或更低的衬垫（60的电阻抗的介电常数通孔从所述等离子体是由材料组成，它的绝缘部件45，体容器（2A） ），可以防止在浇口41中产生局部等离子体。[0050] 由盖构件47在顶部45设置的绝缘构件，和覆盖所述绝缘性部件45的表面，可以通过绝缘构件45向等离子体被保护不受损坏。

公开(公告)号：KR1020170007137A

公开(公告)日：2017-01-18

申请号：KR1020160084682

申请日：2016-07-05

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미나미마사토 ,  사토료 ,  사사키요시히코 ,  헴미아츠시

IPC: H01J37/32 ,  H05H1/46

Abstract: 플라즈마에의한부식에대한내구성이뛰어난샤워헤드를제공한다. 플라즈마처리장치(11)에구비되는샤워헤드(22)는챔버(20) 내에처리가스를토출하는가스토출홀(40)과가스토출홀(40)의가스토출구측에형성된오목부를가지는기재(60)와, 세라믹스또는스테인리스로이루어지고, 기재(60)의오목부에고정된원통형상의슬리브를가지고, 슬리브의표면과기재(60)에있어서슬리브가배치된면이내플라즈마피막(63)으로덮인구조로한다. 세라믹스슬리브(61)를이용하는경우에는기재(60)의플라즈마생성공간(S)측의면과내플라즈마피막(63)과의사이에하지피막(62)을마련한다.

公开(公告)号：KR1020160079662A

公开(公告)日：2016-07-06

申请号：KR1020150178938

申请日：2015-12-15

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미나미마사토 ,  사사키요시히코 ,  헴미아츠시 ,  사이토히토시

IPC: H01L21/687 ,  H01L21/683 ,  H05H1/46 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/67

Abstract: (과제) 플라즈마처리를행할때에이용되는, 포커스링(6)을구비한탑재대(2)에있어서, 수직방향의전계에기인하는포커스링(6)의깎임을억제하여파티클을저감하는것. (해결수단) 유리기판 G가탑재되는탑재대본체(2)를, 측주면이평탄한기둥형상의구조로하고, 포커스링(6)의아래쪽에서탑재대본체(2)를둘러싸도록또한탑재대본체(2)의측주면에압접되도록측부절연부재(31)를마련하고있다. 따라서, 포커스링(6)의바로밑에는탑재대본체(2)가존재하지않으므로, 포커스링(6)에수직방향의전계가발생하지않게되어, 포커스링(6)의깎임을억제할수 있다. 또한하부전극(20)의측주면에측부절연부재(31)를압접시키고, 보조절연부재(32)를절연스페이서부재(28)에압접시킴과아울러, 측부절연부재(31)와, 보조절연부재(32)의틈을미로구조로하는것에의해, 이상방전을억제할수 있다.

Abstract translation: 本发明涉及一种包括用于等离子体处理的聚焦环（6）的装载台（2），能够通过抑制由于垂直电场引起的聚焦环（6）的截止来减少颗粒。 装载有玻璃基板G的装载台体（2）具有平坦的柱状结构的侧面。 制备侧绝缘构件（31）与主体（2）的侧表面焊接以围绕聚焦环（6）下方的主体（2）。 因此，由于装载体（2）不存在于聚焦环（6）正下方，因此在聚焦环（6）中产生垂直电场以抑制聚焦环（6）的截止。 此外，侧绝缘构件（31）与下电极（20）的侧面焊接，用绝缘间隔构件（28）焊接副绝缘构件（32），并且侧绝缘构件 31），并且副绝缘构件（32）形成为迷宫结构。 因此，本发明能够防止异常放电。

公开(公告)号：KR1020130141418A

公开(公告)日：2013-12-26

申请号：KR1020130152992

申请日：2013-12-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 사사키요시히코 ,  미나미마사토

IPC: H01L21/683 ,  H01L21/00

CPC classification number: H01L21/67126 ,  H01L21/67196 ,  H01L21/67201

Abstract: The purpose of the present invention is to provide a ring-shaped shield member capable of preventing the generation of a gap between components of a ring-shaped shield member and a substrate mounting table and, at the same time, preventing damage to the components. A shield ring (15) comprises four ring components (41-44). An omnidirectional movement control unit (45) is installed at a fixed end in the longitudinal direction of each ring component (41-44). A unidirectional movement permission unit (46) is installed at an interval from the omnidirectional movement control unit (45). For example, the assembly of ring components (41-44) is as follows: the cross section of a fixed end (41a) of one ring component (41) is in contact with a side surface of a free end (43b) of another adjacent ring component (43) while a side surface of a free end (41b) of the ring component (41) is in contact with the cross section of a fixed end (44a) of another adjacent ring component (44).

Abstract translation: 本发明的目的是提供一种能够防止在环状屏蔽部件和基板安装台的部件之间产生间隙的环形屏蔽部件，并且同时防止对部件的损坏。 屏蔽环（15）包括四个环组件（41-44）。 全向运动控制单元（45）安装在每个环件（41-44）的纵向方向的固定端。 单向运动允许单元（46）以全向移动控制单元（45）的间隔安装。 例如，环部件（41-44）的组装如下：一个环部件（41）的固定端（41a）的横截面与另一个环部件（41）的自由端（43b）的侧表面接触 同时环形部件（41）的自由端（41b）的侧表面与另一个相邻的环形部件（44）的固定端（44a）的横截面相接触。