Abstract:
A thin film transistor, a method of manufacturing the same, and a method for manufacturing an organic electroluminescent display device using the same are provided to minimize the residue of impurity ions in a polycrystalline silicon layer by rapid crystallization. A thin film transistor comprises a substrate(100), a buffer layer(110), a metal catalytic layer(120), a semiconductor layer(140) and a gate insulating layer(150). The buffer layer is arranged on the substrate. The metal catalytic layer is arranged on the buffer layer. The semiconductor layer is arranged on the metal catalytic layer in order to expose the metal catalytic layer. The gate insulating layer is arranged on the metal catalytic layer in order to cover the semiconductor layer. The thin film transistor more includes a gate electrode(160), and a interlayer insulating film(170) and source/drain electrodes(180a,180b). The gate electrode is arranged on the gate insulating layer in order to face the semiconductor layer. The interlayer insulating film is arranged on the gate insulating layer in order to cover the gate electrode.
Abstract:
PURPOSE: An organic light emitting display apparatus is provided to be operated as a mirror while an organic light emitting device is not radiated. CONSTITUTION: An organic light emitting display apparatus is composed of a substrate(101), an organic emitting unit(110), a reflecting member(103), a sealing member(102), and a bonding member(107). The organic emitting unit is formed on the substrate, and a reflecting member is arranged at a non-emitting region(C) of the organic emitting unit. The sealing member covers the organic emitting unit and it is arranged at with being separated from the organic emitting unit.
Abstract:
PURPOSE: A thin film transistor, a method of manufacturing a thin film transistor and an organic light emitting display device having the thin film transistor are provided to reduce a production costs by using one mask to form source, drain, and gate electrode at the same time. CONSTITUTION: In a thin film transistor, a method of manufacturing a thin film transistor and an organic light emitting display device having the thin film transistor, an active layer(12) comprised of an oxide semiconductor is arranged on a substrate(10). A gate insulating film(13) is formed on the substrate having the active layer. A source and a drain electrode(14b,14c) are formed in the gate insulating film to be connected to the active layer. A gate electrode is formed on the gate insulating layer between the source and drain electrode. A protective layer(15) is formed on the gate insulating layer including the source, drain electrode and gate electrode.
Abstract:
PURPOSE: An organic electroluminescent display device is provided to reduce production cost and streamline manufacturing processes by omitting a separate patterning process for forming a reflective layer. CONSTITUTION: A display part is positioned on a substrate(100). An encapsulation substrate(300) is positioned on the upper part of the display part. A reflective layer(241) is formed to one side of the substrate. A photosensor(247) is interposed between the reflective layer and the encapsulation substrate and detects the light incident through the encapsulation substrate. The light which is emitted from the display part and is reflected from the upper part of the encapsulation substrate is incident to the photosensor. The light incident to the photosensor is detected.
Abstract:
본 발명은 수요자의 다양한 디자인들을 용이하게 반영하기에 적합한 고품질 싸인 보드를 위하여, 기판과, 상기 기판 상에 배치된 복수개의 제1도전라인들과, 상기 제1도전라인들에 전기적으로 연결된 복수개의 화소전극들과, 상기 기판 상에 배치되며 발광층을 포함하는 중간층과, 상기 중간층 상에 배치된 대향전극을 구비하는 것을 특징으로 하는 유기 발광 소자를 이용한 싸인 보드를 제공한다.