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公开(公告)号：KR1020110039772A
公开(公告)日：2011-04-20
申请号：KR1020090096759
申请日：2009-10-12
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786 , H05B33/02
CPC classification number: H01L29/7869 , H01L27/1225 , H01L27/3262 , H01L29/78645 , H01L29/78696 , H01L29/78621
Abstract: PURPOSE: A thin film transistor, a method of manufacturing a thin film transistor and an organic light emitting display device having the thin film transistor are provided to reduce a production costs by using one mask to form source, drain, and gate electrode at the same time. CONSTITUTION: In a thin film transistor, a method of manufacturing a thin film transistor and an organic light emitting display device having the thin film transistor, an active layer(12) comprised of an oxide semiconductor is arranged on a substrate(10). A gate insulating film(13) is formed on the substrate having the active layer. A source and a drain electrode(14b,14c) are formed in the gate insulating film to be connected to the active layer. A gate electrode is formed on the gate insulating layer between the source and drain electrode. A protective layer(15) is formed on the gate insulating layer including the source, drain electrode and gate electrode.
Abstract translation: 目的：提供薄膜晶体管，制造薄膜晶体管的方法和具有薄膜晶体管的有机发光显示装置，以通过使用一个掩模在相同的方式形成源极，漏极和栅电极来降低生产成本 时间。 构成：在薄膜晶体管中，制造薄膜晶体管的方法和具有薄膜晶体管的有机发光显示装置，在基板（10）上设置有由氧化物半导体构成的有源层（12）。 在具有活性层的基板上形成栅极绝缘膜（13）。 源极和漏极电极（14b，14c）形成在栅极绝缘膜中以与有源层连接。 栅电极形成在源电极和漏电极之间的栅极绝缘层上。 在包括源极，漏极和栅电极的栅绝缘层上形成保护层（15）。
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公开(公告)号：KR100964234B1
公开(公告)日：2010-06-17
申请号：KR1020080125962
申请日：2008-12-11
Applicant: 삼성모바일디스플레이주식회사
CPC classification number: H01L27/3269 , G06F3/0412 , G06F3/042 , H01L21/0271 , H01L27/3246
Abstract: PURPOSE: An organic electroluminescent display device is provided to prevent the light emitted from an organic light emitting device from being directly incident to a photosensor by forming a light blocking part in the photosensor. CONSTITUTION: A display part comprises a substrate(100), a thin film transistor(220), an organic light emitting device(230), and a photosensor(240). The organic light emitting device comprises a pixel electrode, an opposite electrode, and an intermediate layer. A pixel electrode is electrically connected to the thin film transistor. The opposite electrode is formed in the whole surface of the substrate. The intermediate layer is arranged between the pixel electrode and the opposite electrode. A light blocking part is formed in one side of a photosensor.
Abstract translation: 目的：提供一种有机电致发光显示装置，用于通过在光传感器中形成遮光部来防止从有机发光元件发射的光直接入射到光传感器。 构成：显示部件包括基板（100），薄膜晶体管（220），有机发光器件（230）和光电传感器（240）。 有机发光器件包括像素电极，相对电极和中间层。 像素电极电连接到薄膜晶体管。 相对电极形成在基板的整个表面上。 中间层配置在像素电极和对置电极之间。 遮光部分形成在光电传感器的一侧。
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公开(公告)号：KR1020100008707A
公开(公告)日：2010-01-26
申请号：KR1020080069303
申请日：2008-07-16
Applicant: 삼성모바일디스플레이주식회사
CPC classification number: H01L27/3244 , G06F3/0412 , G06F3/0421 , H01L27/3227 , H01L27/323 , H01L51/5246 , H01L2924/01022 , H01L2924/01042 , H01L2924/13069
Abstract: PURPOSE: An organic electroluminescent display device is provided to reduce production cost and streamline manufacturing processes by omitting a separate patterning process for forming a reflective layer. CONSTITUTION: A display part is positioned on a substrate(100). An encapsulation substrate(300) is positioned on the upper part of the display part. A reflective layer(241) is formed to one side of the substrate. A photosensor(247) is interposed between the reflective layer and the encapsulation substrate and detects the light incident through the encapsulation substrate. The light which is emitted from the display part and is reflected from the upper part of the encapsulation substrate is incident to the photosensor. The light incident to the photosensor is detected.
Abstract translation: 目的：提供一种有机电致发光显示装置，以通过省略用于形成反射层的单独的图案化工艺来降低生产成本并简化制造工艺。 构成：显示部件位于基板（100）上。 封装基板（300）位于显示部件的上部。 反射层（241）形成在基板的一侧。 光传感器（247）插入在反射层和封装基板之间，并检测通过封装基板入射的光。 从显示部发射并从封装基板的上部反射的光入射到光传感器。 检测到光电传感器入射的光。
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公开(公告)号：KR100922066B1
公开(公告)日：2009-10-16
申请号：KR1020070077473
申请日：2007-08-01
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L31/12
CPC classification number: H01L31/153 , G01J1/02 , G01J1/0209 , G01J1/04 , G01J1/0418 , G01J1/0488 , G01J1/4228 , G02F1/13318 , H01L27/1446 , H01L27/3269 , H01L31/02162 , H01L31/103 , H01L31/105
Abstract: 본 발명은 광 감지센서 및 이를 이용한 발광표시장치에 관한 것으로, 본 발명의 광 감지센서는 외부 광에 대하여 투과도가 서로 다르게 설정되는 다수의 광 입사막으로 이루어진 광 입사부; 및 상기 다수의 광 입사막으로부터 입사되는 광의 량에 따라 전기적 신호를 출력하는 다수의 광 감지소자를 포함하며, 상기 다수의 광 감지소자로부터 출력되는 전기적 신호에 의해 상기 외부 광의 세기가 감지되며, 상기 광 입사막과 광 감지소자는 서로 대응되게 배치된다.
광 입사부, 광 감지센서, 외부 조도-
公开(公告)号：KR100882679B1
公开(公告)日：2009-02-06
申请号：KR1020070093632
申请日：2007-09-14
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L31/10
CPC classification number: H01L27/3269 , H01L27/1214
Abstract: A light emitting display device capable of controlling luminance according to surrounding light amount and a manufacturing method thereof are provided to increase light receiving efficiency of a photo diode by forming a receiving part of the photo diode with amorphous silicone. A light emitting device is formed on a substrate(110), and is connected to a thin film transistor. A photo diode(120) is formed on the substrate. Luminance of the light emitting device is controlled by a control part according to electric signals outputted from the photo diode. The photo diode has an N-type doped region(121), a P-type doped region(122), and an intrinsic region(123). The intrinsic region is made of the amorphous silicone. The N-type doped region and the P-type doped region are made of poly crystalline silicone.
Abstract translation: 提供能够根据周围光量控制亮度的发光显示装置及其制造方法，通过用无定形硅胶形成光电二极管的接收部分来提高光电二极管的光接收效率。 发光器件形成在衬底（110）上，并连接到薄膜晶体管。 在基板上形成光电二极管（120）。 根据从光电二极管输出的电信号，控制部分控制发光器件的亮度。 光电二极管具有N型掺杂区域（121），P型掺杂区域（122）和固有区域（123）。 本征区由无定形硅酮制成。 N型掺杂区域和P型掺杂区域由多晶硅硅酮制成。
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Patent Agency Ranking
公开(公告)号：KR101101065B1
公开(公告)日：2011-12-30
申请号：KR1020100025659
申请日：2010-03-23
Applicant: 삼성모바일디스플레이주식회사
CPC classification number: G01J1/46
Abstract: 본 발명은 광 감지를 수행하는 프레임 기간을 복수의 서브 프레임으로 분할하여 구동함으로써, 감지 가능한 주변광의 범위를 확장하고 낮은 조도에서의 분해능을 향상시키는 평판표시장치용 광 감지회로 및 그 구동방법을 제공한다.
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公开(公告)号：KR1020110123984A
公开(公告)日：2011-11-16
申请号：KR1020100043503
申请日：2010-05-10
Applicant: 삼성모바일디스플레이주식회사
CPC classification number: G09G3/30 , G09G3/3233 , G09G5/00 , G09G2300/0819 , G09G2300/0842 , G09G2300/0852 , G09G2300/0861 , G09G2320/0223 , G09G2320/0295 , G09G2320/043 , G09G2320/048 , H01L27/3276 , H01L27/3288
Abstract: PURPOSE: A pixel circuit for a flat panel display device and a driving method thereof are provided to easily control a threshold voltage by forming a pixel circuit with the oxide thin film transistor of a dual gate structure. CONSTITUTION: A first gate(G1) is connected to a scan line in a first transistor(T1). A drain(D) is connected to a data line in the first transistor. The second transistor(T2) forms a first gate to be connected to the source(S) of the first transistor. The second transistor forms the drain to be connected to a first supply voltage. A capacitor(C1) is formed to be connected between the first gate and the source of the second transistor.
Abstract translation: 目的：提供一种用于平板显示装置的像素电路及其驱动方法，以通过与双栅结构的氧化物薄膜晶体管形成像素电路来容易地控制阈值电压。 构成：第一栅极（G1）连接到第一晶体管（T1）中的扫描线。 漏极（D）连接到第一晶体管中的数据线。 第二晶体管（T2）形成要连接到第一晶体管的源极（S）的第一栅极。 第二晶体管形成要连接到第一电源电压的漏极。 形成电容器（C1）连接在第二晶体管的第一栅极和源极之间。
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公开(公告)号：KR101074813B1
公开(公告)日：2011-10-19
申请号：KR1020100001313
申请日：2010-01-07
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L51/50 , H01L29/786
CPC classification number: H01L27/1225 , H01L27/3244 , H01L51/5253 , H01L2227/323
Abstract: 본발명은, 박막트랜지스터의활성층의열화를방지할수 있는유기발광표시장치및 그제조방법을제공한다. 본발명의일실시예에따른유기발광표시장치는, 기판; 기판상에형성되고, 활성층을포함하는박막트랜지스터들; 박막트랜지스터들을덮는평탄화층; 평탄화층상에위치하고, 박막트랜지스터들과전기적으로연결된제1 전극; 및활성층을덮도록평탄화층상에위치한이온차단층;을포함한다.
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公开(公告)号：KR101056229B1
公开(公告)日：2011-08-11
申请号：KR1020090096759
申请日：2009-10-12
Applicant: 삼성모바일디스플레이주식회사
IPC: H01L29/786 , H05B33/02
CPC classification number: H01L29/7869 , H01L27/1225 , H01L27/3262 , H01L29/78645 , H01L29/78696
Abstract: 본 발명은 산화물 반도체를 활성층으로 하는 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 유기전계발광 표시 장치에 관한 것으로, 박막 트랜지스터는 기판 상에 산화물 반도체로 형성된 활성층, 활성층을 포함하는 기판 상에 형성된 게이트 절연막, 게이트 절연막 상에 활성층과 연결되도록 형성된 소스 및 드레인 전극, 소스 및 드레인 전극 사이의 게이트 절연막 상에 형성된 게이트 전극, 소스 및 드레인 전극과 게이트 전극을 포함하는 게이트 절연막 상에 형성된 보호층, 그리고 소스 및 드레인 전극과 게이트 전극 사이의 오프셋(offset) 영역에 대응하는 보호층 상에 형성된 보조 게이트 전극을 포함한다.
산화물 반도체, 활성층, 보조 게이트 전극, 전류 특성, 마스크Abstract translation: 本发明涉及一种薄膜晶体管，其制造方法，以及包括氧化物半导体的薄膜晶体管的显示装置作为有源层的有机电致发光，形成包括有源层，由氧化物半导体的衬底上形成的有源层的衬底上的薄膜晶体管 栅极绝缘膜，形成源极被耦合与所述栅极绝缘膜在有源层和漏电极，形成包括栅电极，源电极和漏电极，并形成在栅极源极和漏极电极之间的绝缘膜上的栅电极的栅极绝缘膜上的保护层，以及 形成对应于源电极和漏电极与栅电极之间的偏移（偏移）区域中的保护层上的辅助栅电极。
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公开(公告)号：KR1020110024449A
公开(公告)日：2011-03-09
申请号：KR1020090082447
申请日：2009-09-02
Applicant: 삼성모바일디스플레이주식회사
CPC classification number: G06F3/0412 , G02F1/13338 , G06F3/042 , H01L27/14643 , G06F3/0304
Abstract: PURPOSE: A light sensor circuit, a driving method thereof, and a touch screen panel having the same are provided to maximize the light reception region of a light reception device by minimizing the number of power lines and signal lines when designing a light sensor circuit. CONSTITUTION: A photo diode(PD) is connected to a first power source, and a capacitor(C) is connected between the light reception device and a second power source. A gate electrode is connected to a first electrode of the capacitor in a first transistor(T1), and the first transistor is connected between a selection signal line and the first electrode of the second transistor. The gate electrode is connected to the selection signal line in a second transistor(T2). The second transistor is connected the second electrode and an output signal line in the first transistor. The gate electrode is connected to an initialization power source in a third transistor which is connected between the second power source and the output signal line.
Abstract translation: 目的：提供一种光传感器电路及其驱动方法以及具有该光传感器电路的触摸屏面板，以在设计光传感器电路时使电源线和信号线的数量最小化来使光接收装置的光接收区域最大化。 构成：光电二极管（PD）连接到第一电源，电容器（C）连接在光接收装置和第二电源之间。 栅电极在第一晶体管（T1）中连接到电容器的第一电极，第一晶体管连接在选择信号线和第二晶体管的第一电极之间。 栅电极连接到第二晶体管（T2）中的选择信号线。 第二晶体管连接第一晶体管中的第二电极和输出信号线。 栅电极连接在连接在第二电源和输出信号线之间的第三晶体管中的初始化电源。
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