Abstract:
PURPOSE: A boat for loading a semiconductor substrate is provided to reduce process time, by not using a dummy wafer. CONSTITUTION: A top plate (20) and a bottom plate (10) are separated from each other. A load (30) is formed between the top plate and the bottom plate. A plurality of buffer plates (40) is arranged with a first gap along the length direction of the load. A supporting part is formed between a first buffer plate and a second buffer plate. The supporting part supports a semiconductor substrate.
Abstract:
PURPOSE: A timing controller, a display driver and a driver module and a display device having the same, and a method for transferring a signal are provided to improve EMI by reducing the number of PCB layer. CONSTITUTION: A timing controller comprises a clock generator(21) and a data processing unit(22). The clock generator receives a first clock. The clock generator generates a second clock. The clock generator transmits the second clock to a plurality of display drivers. The data processing unit changes data. The data processing unit distributes transformed data into a plurality of display drivers.
Abstract:
A display driver integrated circuit is provided to reduce data transmission speed between a timing controller and a display circuit by reducing a lock time of a delay locked loop. Source drivers(210, 220, 230) operate a panel by using a data signal and a clock signal from a timing controller. Clock signal generators(211, 221, 231) generate an arranged clock signal to drive the operation panel, and a coast signal generator(240) generates a coast signal having more than one active section by corresponding to the operation of a source driver, and controls the arrangement of clock signal generator in the active section disable.
Abstract:
원자층 적층을 수행하기 위한 챔버 내부에 반도체 기판을 위치시킨다. 그리고, 상기 원자층 적층을 수행하기 위한 주-공정을 수행하기 이전에 상기 챔버 내부에 아르곤 가스, 질소 가스 등과 같은 불활성 가스를 포함하는 제1 퍼지 가스를 제공한다. 이때, 상기 제1 퍼지 가스는 후속되는 제1 반응 가스를 제공하는 시간에 비해 충분히 장시간에 걸쳐 제공하는 것이 바람직하다. 이와 같이, 상기 제1 퍼지 가스를 장시간에 걸쳐 제공할 때 상기 제1 퍼지 가스가 경유하는 부재들 즉, 밸브, 유량 제어기 등을 점검한다. 그리고, 상기 부재들의 점검에 근거하여 상기 제1 퍼지 가스가 상기 챔버 내부로 이상 없이 제공되는 가를 확인한다. 상기 확인 결과, 상기 제1 퍼지 가스가 상기 챔버 내부로 이상 없이 제공될 경우에 한정하여 후속되는 주-공정을 수행한다.
Abstract:
쓰루풋이 증가한 유전막 구조물 형성 방법 및 이를 이용한 커패시터 형성 방법에 있어서, 배치 타입의 챔버 내에 다수의 반도체 기판을 로딩하고, 상기 챔버 내에서 상기 다수의 반도체 기판 상에 금속 산화물로 이루어지는 제1 유전막을 형성한다. 이어서, 상기 다수의 반도체 기판에 각각 형성된 제2 유전막 상에 누설 전류를 감소시키기 위한 제2 유전막을 형성한다. 이로써, 제1 유전막 및 제2 유전막으로 이루어진 유전막 구조물을 형성할 수 있다. 상기 유전막 구조물을 배치 타입의 챔버 내에서 형성됨으로써, 쓰루풋이 증가하며 공정을 수행하는데 소요되는 비용을 감소시킬 수 있다.
Abstract:
An electrophotographic photoreceptor is provided to reduce image deterioration accompanied with repeated use by improving optical fatigue resistance and thermal fatigue resistance, and therefore to obtain images with high quality. The electrophotographic photoreceptor(5) includes: a conductive support; a primer layer containing a metal oxide, a binder resin and a heat stabilizer; an electric charge generating layer containing a binder resin and a phthalocyanine-based electric charge generating material; and an electric charge transporting layer containing an electric charge transporting material, a binder resin and a heat stabilizer, in order. Particularly, in the primer layer and electric charge transporting layer, a phenol-based heat stabilizer, a mixture of a phenol-based heat stabilizer and a phosphite-based heat stabilizer, or a mixture of a phenol-based heat stabilizer and a thioether-based heat stabilizer, on the basis of the weight of binder resin are contained, respectively.
Abstract:
A shower head is provided to firmly fix a shower nozzle to a manifold by increasing the area of a bracket(300a) for connecting a shower head to a manifold such that the bracket is located between the shower head and the manifold. A shower nozzle(200) injects etchant to the upper surface of a wafer in a chamber, including a body(220) and a pipe connection part(210) protruding from the body. A manifold(100) is fixed to the chamber, separated from the shower nozzle and having a hole(100a) into which the pipe connection part is inserted. A bracket is positioned between the manifold and the body of the shower nozzle to fix the shower nozzle to the manifold, including first and second connection parts(310a,320). The first connection part separates the shower nozzle from the manifold by a predetermined distance, and the second part is positioned on the lateral surface of the body to fix the shower nozzle. A pipe(400) supplies the etchant to the shower nozzle, connected to the pipe connection part. The second connection part is fixed to the body by a bolt. The bracket includes quartz.
Abstract:
An aging method of a dry etching apparatus is provided to shorten an aging process time for embodying the normal number of particles and etch rate by sufficiently depositing reaction byproducts on the inner wall of an etch chamber within a short interval of time. A test wafer having a processed layer is loaded into a chamber of a dry etching apparatus(S121). Etch gas of a plasma state is supplied to the inside of the chamber to etch the processed layer(S124). An etch process using the etch gas is performed on the processed layer for a time interval of 30~200 minutes to form a reaction byproduct layer on the wafer(S126). The reaction byproduct layer is separated from the wafer, and a heat treatment is performed on the wafer to deposit the separated reaction byproduct on the inner wall of the chamber. In the process for forming the reaction byproduct layer, an etch process performed for a time interval of 15 minutes or more is carried out at least twice.