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公开(公告)号：KR1020130006182A
公开(公告)日：2013-01-16
申请号：KR1020110068071
申请日：2011-07-08
Applicant: 삼성전자주식회사
CPC classification number: H04N5/3696 , H01L27/14609 , H04N13/30 , H04N5/369
Abstract: PURPOSE: A sensor, a data processing system having the same, and a method for operating the same are provided to make multiple color pixels and multiple deep pixels a single chip. CONSTITUTION: A pixel array deeply includes a depth pixel(Z) and a color pixel(R,G,B). The first signal line group includes the multiple signal lines for supplying multiple first control signals(RG,TG,SEL) for controlling the color pixel. The second signal line group includes the multiple signal lines for supplying multiple second signals(RG1,DG,TG1,SEL1) for controlling the depth pixel.
Abstract translation: 目的：提供一种传感器，具有该传感器的数据处理系统及其操作方法，以使多个彩色像素和多个深度像素成为单个芯片。 构成：像素阵列深深地包括深度像素（Z）和彩色像素（R，G，B）。 第一信号线组包括用于提供用于控制彩色像素的多个第一控制信号（RG，TG，SEL）的多条信号线。 第二信号线组包括用于提供用于控制深度像素的多个第二信号（RG1，DG，TG1，SEL1）的多条信号线。
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公开(公告)号：KR101196795B1
公开(公告)日：2012-11-05
申请号：KR1020070101667
申请日：2007-10-09
Applicant: 삼성전자주식회사
IPC: G01R33/00
CPC classification number: G11B9/02 , B82Y10/00 , G11B9/1409
Abstract: 개시된 전기장 센서는 전기장 센서는, 최상층에 불순물이 고농도로 도핑된 저저항 반도체층이 마련된 기판과, 저저항 반도체층 위의 일부 영역에 위치되며 불순물이 저농도로 도핑된 고저항 반도체층과, 고저항 반도체층 위에 위치되는 도전층을 포함하여, 저저항 반도체층, 고저항 반도체층, 및 도전층을 통하여 흐르는 전류의 변화에 의하여 전기장의 변화를 검출한다.
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13.发明授权
公开(公告)号：KR100909962B1
公开(公告)日：2009-07-29
申请号：KR1020060107484
申请日：2006-11-01
Applicant: 삼성전자주식회사
CPC classification number: G11B9/02
Abstract: Provided is an electric field information reading head for reading information from a surface electric charge of an information storage medium, the electric field information reading head comprising a semiconductor substrate having a resistance region formed in a central part at one end of a surface facing a recording medium, the resistance region being lightly doped with impurities, and source and drain regions formed on both sides of the resistance region, the source region and the drain region being more highly doped with impurities than the resistance region. The source region and the drain region extend along the surface of the semiconductor substrate facing the recording medium, and electrodes are connected electrically with the source region and the drain region respectively. In addition, provided is a method of fabricating the electric field information reading head and a method of mass-producing the electric field information reading head on a wafer.
Abstract translation: 提供一种用于从信息存储介质的表面电荷读取信息的电场信息读取头，该电场信息读取头包括半导体衬底，该半导体衬底具有形成在面对记录的表面的一端的中心部分中的电阻区域 所述电阻区域轻掺杂杂质，并且在所述电阻区域的两侧形成源极区域和漏极区域，所述源极区域和所述漏极区域比所述电阻区域更高掺杂杂质。 源极区域和漏极区域沿着半导体衬底的面向记录介质的表面延伸，并且电极分别与源极区域和漏极区域电连接。 另外，提供了一种制造电场信息读取头的方法和一种在晶片上批量生产电场信息读取头的方法。
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公开(公告)号：KR100905716B1
公开(公告)日：2009-07-01
申请号：KR1020070046201
申请日：2007-05-11
Applicant: 삼성전자주식회사
IPC: G11B5/02
CPC classification number: G11B9/02
Abstract: 본 발명의 전계기록재생장치의 구동방법은, 소오스 영역과 드레인 영역 사이에 위치되는 저항 영역과 이 저항영역 상에 위치되는 쓰기 전극을 구비하는 전계기록재생헤드를 채용한 전계기록재생장치의 구동방법으로서, 쓰기 전극에 기록매체에 분극을 유발하는 임계전압보다 낮은 조정전압을 인가하고, 기록매체 상의 전기 도메인의 분극방향에 따라 저항 영역을 통하여 흐르는 전류량의 변화에 기초하여 기록매체에 기록된 정보를 재생하는 단계를 포함하는 것을 특징으로 한다.
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公开(公告)号：KR100821348B1
公开(公告)日：2008-04-11
申请号：KR1020070011636
申请日：2007-02-05
Applicant: 삼성전자주식회사
IPC: G11B5/127
Abstract: A read/write head structure of an information storage device and a manufacturing method thereof are provided to form an external interconnection pad easily by installing a metal pad electrically connected to a read/write head. A method for manufacturing a read/write head structure of an information storage device comprises the steps of: patterning an etching mask on a silicon wafer; slantly etching the silicon wafer in the sectional direction through dry or wet process using the patterned etching mask; removing the etching mask; forming a read/write head(13) on the upper part of the silicon wafer; forming a metal pad(15) electrically connected with the read/write head on a slant surface(14); and splitting the read/write head by cutting the slant surface of the silicon wafer.
Abstract translation: 提供信息存储装置的读/写头结构及其制造方法，通过安装与读/写头电连接的金属垫，容易地形成外部互连衬垫。 一种用于制造信息存储装置的读/写头结构的方法包括以下步骤：在硅晶片上图案化蚀刻掩模; 使用图案化的蚀刻掩模，通过干法或湿法在横截面方向上倾斜蚀刻硅晶片; 去除蚀刻掩模; 在所述硅晶片的上部形成读/写头（13）; 在倾斜表面（14）上形成与所述读/写头电连接的金属焊盘（15）; 以及通过切割硅晶片的倾斜表面来分割读/写头。
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Patent Agency Ranking
公开(公告)号：KR1020070109776A
公开(公告)日：2007-11-15
申请号：KR1020060107484
申请日：2006-11-01
Applicant: 삼성전자주식회사
CPC classification number: G11B9/02
Abstract: An electric field information reproducing head, an electric field information recording and reproducing head, a manufacturing method thereof, and an information keeping device thereof are provided to perform a mass production on a wafer easily and to improve reliability and economic efficiency. In an electric field information reproducing head(10), a medium corresponding surface includes a semiconductor substrate(11) having a resistance area(12) and a source and drain area(13,14). The resistance area is positioned at a center portion of one end and doped with a foreign material at low concentration. The source and drain area is positioned at both sides of the resistance area and doped with the foreign material at higher concentration than the resistance area. An electric field information recording and reproducing head includes an insulation screen positioned on the resistance area, and a writing electrode positioned on the insulation screen, additionally. An information keeping device thereof includes an information keeping medium having a recording layer formed by a strong dielectric body. A manufacturing method thereof includes a step of forming the resistance area at the medium corresponding surface by doping the other foreign material whose polarity is different from the polarity of the foreign material for the semiconductor substrate.
Abstract translation: 提供电场信息再现头，电场信息记录和再现头，其制造方法和信息保存装置，以容易地在晶片上进行批量生产，并提高可靠性和经济效率。 在电场信息再现头（10）中，介质对应表面包括具有电阻区域（12）和源极和漏极区域（13,14）的半导体衬底（11）。 电阻区域位于一端的中心部分，并以低浓度掺杂异物。 源极和漏极区域位于电阻区域的两侧，并且以比电阻区域更高的浓度掺杂异物。 电场信息记录和再现头包括位于电阻区域上的绝缘屏幕和位于隔离屏幕上的书写电极。 其信息保存装置包括具有由强介电体形成的记录层的信息保存介质。 其制造方法包括通过掺杂其极性与用于半导体衬底的异物的极性不同的其它异物形成在介质对应表面处的电阻区域的步骤。
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公开(公告)号：KR100723410B1
公开(公告)日：2007-05-30
申请号：KR1020050075250
申请日：2005-08-17
Applicant: 삼성전자주식회사
IPC: G01N13/16
CPC classification number: G11B9/1418 , G01Q70/10 , G01Q70/14 , G01Q70/16 , G01Q80/00
Abstract: 자기정렬된 메탈쉴드를 구비한 저항성 탐침의 제조방법이 개시된다. 개시된 자기정렬된 메탈쉴드를 구비한 저항성 탐침의 제조방법은, 기판 상에서 상기 저항성 팁 상에 제1절연층, 메탈 쉴드 및 제2절연층을 순차적으로 적층하는 단계; 상기 제2절연층을 식각하여 저항영역 상의 상기 메탈 쉴드를 노출하는 단계; 상기 노출된 메탈쉴드를 식각하는 단계; 상기 제1절연층을 식각하여 상기 저항영역을 노출하는 단계;를 구비하는 것을 특징으로 한다.
Abstract translation: 公开了一种制造具有自对准金属屏蔽的电阻探针的方法。 一种制造具有自对准金属屏蔽的电阻探针的方法包括：在衬底上的电阻性尖端上顺序沉积第一绝缘层，金属屏蔽和第二绝缘层; 蚀刻第二绝缘层以暴露电阻区上的金属屏蔽; 蚀刻暴露的金属屏蔽层; 并通过蚀刻第一绝缘层来暴露电阻区域。
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公开(公告)号：KR1020070020889A
公开(公告)日：2007-02-22
申请号：KR1020050075250
申请日：2005-08-17
Applicant: 삼성전자주식회사
IPC: G01N13/16
CPC classification number: G11B9/1418 , G01Q70/10 , G01Q70/14 , G01Q70/16 , G01Q80/00
Abstract: 자기정렬된 메탈쉴드를 구비한 저항성 탐침의 제조방법이 개시된다. 개시된 자기정렬된 메탈쉴드를 구비한 저항성 탐침의 제조방법은, 기판 상에서 상기 저항성 팁 상에 제1절연층, 메탈 쉴드 및 제2절연층을 순차적으로 적층하는 단계; 상기 제2절연층을 식각하여 저항영역 상의 상기 메탈 쉴드를 노출하는 단계; 상기 노출된 메탈쉴드를 식각하는 단계; 상기 제1절연층을 식각하여 상기 저항영역을 노출하는 단계;를 구비하는 것을 특징으로 한다.
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公开(公告)号：KR100634552B1
公开(公告)日：2006-10-16
申请号：KR1020050112965
申请日：2005-11-24
Applicant: 삼성전자주식회사
IPC: G01Q60/54
Abstract: An electric field sensing probe with a separate sensor and an information storage device having the probe are provided to manufacture tips with the same shape by using a single mask for forming the tips. An electric field sensing probe includes a cantilever(110), a sensing region(140), a first wire(122), and second and third wires(142,144). The cantilever includes a conductive tip protruded from the end of the cantilever, and a protrusion portion, which is apart from the tip. The sensing region is formed on the protrusion portion. The first wire is electrically connected to the conductive tip. The second and third wires are electrically connected to both sides of the sensing region, respectively.
Abstract translation: 提供具有单独传感器的电场感测探针和具有探针的信息存储装置，以通过使用用于形成尖端的单个掩模来制造具有相同形状的尖端。 电场感测探针包括悬臂（110），感测区域（140），第一导线（122）以及第二导线和第三导线（142,144）。 悬臂包括从悬臂端部突出的导电尖端和远离尖端的突出部分。 感测区域形成在突起部分上。 第一导线电连接到导电尖端。 第二导线和第三导线分别电连接到感测区域的两侧。
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公开(公告)号：KR101715141B1
公开(公告)日：2017-03-13
申请号：KR1020110118989
申请日：2011-11-15
Applicant: 삼성전자주식회사
IPC: H04N5/369 , H04N5/3745 , H04N13/02
CPC classification number: H01L27/14609 , H04N13/207 , H04N13/271
Abstract: 깊이센서의픽셀이개시된다. 본발명의실시예에따른깊이센서의픽셀은광량출력회로, 상기광량출력회로에연결되고, 대상물로부터반사된빛의양에따라가변되는제1 전하를생성하고, 상기제1 전하를상기광량출력회로로전송하는제1 광량추출회로및 상기광량출력회로에연결되고, 상기대상물로부터반사된빛의양에따라가변되는제2 전하를생성하고, 상기제2 전하를상기광량출력회로로전송하는제2 광량추출회로를포함하며, 상기광량출력회로는상기제1 광량추출회로또는상기제2 광량추출회로로부터전송된상기제1 전하또는상기제2 전하를수신하여입력되는제어신호에따라픽셀신호를출력한다. 즉, 제1 광량추출회로및 제2 광량추출회로는제1 플로팅디퓨젼노드를공유함으로써, 픽셀의소형화에따른공간낭비를최소화할수 있는효과가있다.
Abstract translation: 深度传感器的单位像素包括：光强度输出电路，被配置为根据控制信号输出与第一电荷和第二电荷对应的像素信号的像素信号;第一光强度提取电路，被配置为 产生第一电荷并将第一电荷传输到光强度输出电路，第一电荷根据从目标物体反射的光量而变化，第二光强度提取电路被配置为产生第二电荷 并将第二电荷传输到光强度输出电路，第二电荷根据反射光量而变化。 光强度输出电路包括第一浮动扩散节点。 因此，能够减少空间的浪费，从而制造小尺寸的像素。
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