유기발광소자 충진용 접착시트 및 이의 제조방법
    11.
    发明授权
    유기발광소자 충진용 접착시트 및 이의 제조방법 有权
    用于填充有机发光元件的粘合片及其制造方法

    公开(公告)号:KR101726910B1

    公开(公告)日:2017-04-13

    申请号:KR1020130135072

    申请日:2013-11-07

    CPC classification number: C09J7/10 C09J2203/326 H01L51/524

    Abstract: 본발명은유기발광소자충진용접착필름, 상기유기발광소자충진용접착필름의상부에형성된상부이형필름, 및상기유기발광소자충진용접착필름의하부에형성된하부이형필름을포함하고, 상기유기발광소자충진용접착필름과상기상부이형필름은각각하나이상의모서리에곡면이형성된유기발광소자충진용접착시트및 이의제조방법에관한것이다.

    Abstract translation: 本发明包括在所述有机发光装置填充的粘合剂膜的底部形成的下剥离膜,该有机光的剥离膜的上方的发光器件,和有机发光形成在填充的粘合剂膜的上部部分,用于有机发光器件填充的粘合剂膜 用于元件填充的粘合膜和上离型膜均具有在其一个或多个边缘处形成的弯曲表面及其制造方法。

    반도체용 접착 조성물, 접착 필름 및 반도체 장치
    12.
    发明公开
    반도체용 접착 조성물, 접착 필름 및 반도체 장치 无效
    用于半导体,粘合膜和半导体器件的粘合组合物

    公开(公告)号:KR1020150025991A

    公开(公告)日:2015-03-11

    申请号:KR1020130104242

    申请日:2013-08-30

    CPC classification number: C09J7/00 C09J9/00 C09J163/00 C09J2203/326 H01L21/02

    Abstract: The purpose of the present invention is to provide an adhesive composition for a semiconductor and an adhesive film, which can achieve attach void free or cure void free and can inhibit expansion and generation of void according to control of hardening speed. The present invention relates to an adhesive film for a semiconductor comprising an adhesive layer, which includes: a binder resin; a polyfunctional first epoxy resin; a monofunctional second epoxy resin; a hardener; and a hardening accelerator, and to a semiconductor device connected by the film.

    Abstract translation: 本发明的目的是提供一种用于半导体和粘合剂膜的粘合剂组合物,其可以实现无空隙或固化无空隙,并且可以根据硬化速度的控制来抑制空隙的膨胀和产生。 本发明涉及一种包含粘合剂层的半导体粘合膜,其包括:粘合剂树脂; 多官能第一环氧树脂; 单官能第二环氧树脂; 硬化剂 和硬化促进剂,以及通过该膜连接的半导体器件。

    반도체용 접착 조성물 및 이를 포함하는 접착 필름
    16.
    发明公开
    반도체용 접착 조성물 및 이를 포함하는 접착 필름 无效
    用于半导体的粘合组合物,包括其的粘合膜

    公开(公告)号:KR1020140076785A

    公开(公告)日:2014-06-23

    申请号:KR1020120145220

    申请日:2012-12-13

    Abstract: The present invention relates to an adhesive composition for a semiconductor and an adhesive film including the same, and more specifically, to an adhesive composition for a semiconductor with viscosity of 7000 Pa·s or less at 80 deg. C and 5000 Pa·s or less at 100 deg. C. According to one embodiment of the present invention, the adhesive composition for a semiconductor with a 0-10% of void area is obtained by bonding the film at 100-130 deg. C for 1-60 seconds and hardening the film at 125-150 deg. C for 10-60 minutes.

    Abstract translation: 本发明涉及一种半导体用粘合剂组合物及其粘合膜,更具体地说,涉及在80度下粘度为7000Pa·s以下的半导体用粘合剂组合物。 C和5000Pa·s以下。 C.根据本发明的一个实施方案,通过在100-130度粘合该膜,获得具有0-10%空隙面积的半导体用粘合剂组合物。 C,持续1-60秒,并在125-150度硬化该膜。 C 10-60分钟。

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