-
公开(公告)号：KR1020030028675A
公开(公告)日：2003-04-10
申请号：KR1020010059368
申请日：2001-09-25
Applicant: 한국과학기술연구원
IPC: G02F3/00
Abstract: PURPOSE: An apparatus for realizing an electric light NAND logic element using a semiconductor optical amplifier is provided to be easily combined with other single logic elements for controlling all optical system with only optical signals. CONSTITUTION: A pulse generator(100) generates light pulses. A DFB-LD(Distributed Feedback Laser Diode)(102) has input continuous laser light signals. A first optical divider(104) divides output light of the DFB-LD. An optical modulator(106) modulates the output light from the first optical divider. An optical delay(112) obtains quarter time delay of the output light. An attenuator(108) controls the strength of the output light. A MUX(110) multiplexes the output light of the attenuator. An EDFA(Erbium-Doped Fiber Amplifier)(116) adds the output light of the MUX and the attenuator for amplifying to a pump signal. A tunable laser diode(120) has continuous wave irradiation signals. A second optical divider(122) divides the output light of the tunable laser diode at a ratio of 50 to 50. A semiconductor optical amplifier(124) amplifies the pump signal and the continuous wave irradiation signals for gain-saturating and wavelength-converting the signals. An optical filter(126) filters tunable output light of the semiconductor optical amplifier. An optical signal analyzer(128) detects and analyzes the tunable output light of the optical filter.
Abstract translation: 目的：提供一种用于实现使用半导体光放大器的电灯NAND逻辑元件的装置，以便容易地与用于仅用光信号控制所有光学系统的其它单个逻辑元件组合。 构成：脉冲发生器（100）产生光脉冲。 DFB-LD（分布式反馈激光二极管）（102）具有输入的连续激光信号。 第一分光器（104）分割DFB-LD的输出光。 光调制器（106）调制来自第一分光器的输出光。 光延迟（112）获得输出光的四分之一时间延迟。 衰减器（108）控制输出光的强度。 MUX（110）复用衰减器的输出光。 EDFA（掺铒光纤放大器）（116）将MUX的输出光和用于放大的衰减器相加到泵浦信号。 可调激光二极管（120）具有连续波照射信号。 第二分光器（122）以50至50的比例对可调谐激光二极管的输出光进行分压。半导体光放大器（124）放大泵浦信号和连续波照射信号以进行增益饱和和波长转换 信号。 滤光器（126）对半导体光放大器的可调输出光进行滤光。 光信号分析器（128）检测并分析滤光器的可调输出光。
-
公开(公告)号：KR100368791B1
公开(公告)日：2003-01-24
申请号：KR1020000005619
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L31/12
Abstract: PURPOSE: A method for controlling a band gap of a semiconductor optical device having the structure of a quantum well is provided to prevent a quantum well substrate damaging by using a silicon nitride film as a dielectric cover layer and by controlling a flow ratio of ammonia gas. CONSTITUTION: A substrate having the structure of a quantum well is grown(S100). A dielectric cover layer is deposited on the substrate by a plasma chemical vapor deposition process(S200). A thermal processing is performed on the dielectric cover layer at a predetermined time(S300). The dielectric cover layer is removed(S400). A fluorescence spectrum is measured(S500).
Abstract translation: 目的：提供一种用于控制具有量子阱结构的半导体光学器件的带隙的方法，以通过使用氮化硅膜作为电介质覆盖层并通过控制氨气的流量比来防止量子阱衬底损坏 。 构成：生长具有量子阱结构的衬底（S100）。 通过等离子体化学气相沉积工艺在衬底上沉积电介质覆盖层（S200）。 在预定时间对电介质覆盖层进行热处理（S300）。 介电覆盖层被移除（S400）。 测量荧光光谱（S500）。
-
公开(公告)号：KR1020010077675A
公开(公告)日：2001-08-20
申请号：KR1020000005631
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L31/14
Abstract: PURPOSE: A method for extending the gain bandwidth of a semiconductor optical amplifier is provided to obtain the semiconductor optical amplifier having a wide gain bandwidth by using a quantum dot as a gain region of the semiconductor optical amplifier. CONSTITUTION: An InP(Indium Phosphorus) buffer layer is grown at a predetermined thickness(S10). After the growing of the InP buffer layer, a predetermined gas is supplied(S20, S30, S40). An InAs(Indium arsenide) single well layer is grown on the InP buffer layer(S50). After the growing of the InAs layer, a predetermined gas is supplied(S60, S70, S80). An InP cap layer is grown on the InAs layer(S90).
Abstract translation: 目的：提供一种用于扩展半导体光放大器的增益带宽的方法，通过使用量子点作为半导体光放大器的增益区，获得具有宽增益带宽的半导体光放大器。 构成：以预定厚度生长InP（铟磷）缓冲层（S10）。 在InP缓冲层生长之后，提供预定的气体（S20，S30，S40）。 在InP缓冲层上生长InAs（砷化铟）单阱层（S50）。 在InAs层生长之后，提供预定的气体（S60，S70，S80）。 InAs层在InAs层上生长（S90）。
-
公开(公告)号：KR100121563B1
公开(公告)日：1997-11-13
申请号：KR1019940011792
申请日：1994-05-28
Applicant: 한국과학기술연구원
IPC: G03F7/00
Abstract: It is an object to provide a method capable of easily correcting each mask patterns when manufacturing a mulilayer mask by converting an electronic microscope into a simply additional device in order to perform an electron beam lithography while maintaining original functions thereof. The method according to the present invention can easily compensate defects of a mask prior to manufacturing the mask by using functions of a microscope. The method performs an electron beam lithography to directly represent a pattern on a sample and manufacture the mask while maintaining original functions of the microscope.
Abstract translation: 本发明的目的是提供一种能够在通过将电子显微镜转换为简单的附加装置来制造多层掩模时容易地校正每个掩模图案的方法，以便在保持其原始功能的同时进行电子束光刻。 根据本发明的方法可以通过使用显微镜的功能，在制造掩模之前容易地补偿掩模的缺陷。 该方法进行电子束光刻以直接表示样品上的图案并制造掩模，同时保持显微镜的原始功能。
-
公开(公告)号：KR1020030062610A
公开(公告)日：2003-07-28
申请号：KR1020020002911
申请日：2002-01-18
Applicant: 한국과학기술연구원
IPC: H04N5/913
Abstract: PURPOSE: A watermark embedding method for a digital image by area division is provided to protect the CONSTITUTION: A watermark embedding method for a digital image by area division includes the steps of extracting a region of high semantic importance by region segmentation of an original image(1,2), embedding encoded watermark information to the extracted region(3), segmenting a partial region in which a user is interested in from the image in which the watermark is embedded(4), synthesizing the segmented partial area with a certain background image(5,6), and extracting the watermark from the synthesized image(7).
Abstract translation: 目的：提供一种通过区域划分的数字图像的水印嵌入方法来保护构成：通过区域划分的数字图像的水印嵌入方法包括以下步骤：通过原始图像的区域分割来提取高语义重要性的区域（ 将编码的水印信息嵌入到提取的区域（3）中，从嵌入水印的图像中分割出用户感兴趣的部分区域（4），合成具有特定背景的分割部分区域 图像（5,6），并从合成图像（7）提取水印。
-
Patent Agency Ranking16.发明授权양자우물 무질서화 기술에서 유전체-반도체 덮개층 조합에 의한 ＩｎＧａＡｓ／ＩｎＧａＡｓＰ 양자우물 밴드갭의 조작방법 失效- 量子阱混合中介电半导体覆盖层组合的InGaAs / InGaAsP量子阱带隙控制方法
公开(公告)号：KR100326773B1
公开(公告)日：2002-03-12
申请号：KR1019990044158
申请日：1999-10-12
Applicant: 한국과학기술연구원
IPC: H01L21/18
Abstract: 본발명은양자우물무질서화기술에서유전체-반도체덮개층조합에의한 InGaAs/InGaAsP 양자우물밴드갭의조작방법에관한것으로서, 유전자덮개층을이용하여 InGaAs/InGaAsP 양자우물구조기판에국부적으로다른밴드갭을형성하기위한양자우물무질서화공정에있어서, 상기유전체덮개층으로 SiN나 SiO를사용하고 InGaAs/InGaAsP 양자우물상부의반도체덮개층으로동일두께의 InP이나 InGaAs 혹은 InGaAsP 을사용하여양자우물을무질서화하는경우, 상기유전체덮개층및 반도체덮개층을이용한유전체-반도체조합을양자우물기판상에형성하고소정온도및소정시간의열처리를통하여양자우물구조기판에국부적으로다른밴드갭을형성시킴으로써양자우물구조의밴드갭이동량을조절할수 있다.
-
公开(公告)号：KR1019950033667A
公开(公告)日：1995-12-26
申请号：KR1019940011792
申请日：1994-05-28
Applicant: 한국과학기술연구원
IPC: G03F7/00
Abstract: 본 발명은 전자 현미경을 그 본래의 기능을 살리면서 전자빔 리소그래피를 할 수 있도록 간단한 부가 장치로 개조하여 사용함으로써 다층의 마스크 제작시 각각의 마스크 패턴을 간단히 수정할 수 있는 방법을 제공하는 것을 목적으로 한다. 본 발명의 방법은 전자 현미경의 기능을 활용하므로써 마스크를 만들기 직전에 마스크의 결함을 간단히 수정 보완할 수 있다는 장점과 전자 현미경 기능을 그대로 살리면서 전자빔 리소그래프를 하여 시료위에 패턴을 직접 묘사할 수 있고 마스크를 제작할 수 있다는 장점이 있다.
-
公开(公告)号：KR1019940010493B1
公开(公告)日：1994-10-24
申请号：KR1019910020836
申请日：1991-11-21
Applicant: 한국과학기술연구원
IPC: H01L21/30
CPC classification number: H01L21/67121 , H01L21/187
Abstract: To increase the bonding strength and to remove the micro-gaps incured at bonding two sillicon wafers, the silicon fusion bonding method and equipment were developed. The equipment is composed of a wet oxidation equipment and a quartz spacer separating two wafers (w1,w2). The wafers are bonded by filling the micro-gaps located at junction interface with the wet oxide through the high temperature thermal annealing, which is followed by the stabilization process absorbing a great deal of oxidant. This method can be applied to growing a silicon on an insulation film and forming the micromachine structure for silicon sensors
Abstract translation: 为了增加接合强度并去除粘合两个硅衬底晶片时产生的微缝隙，开发了硅熔接法和设备。 该设备由湿氧化设备和分离两个晶片（w1，w2）的石英间隔件组成。 通过高温热退火填充位于与湿氧化物接合界面处的微缝隙，其后是稳定化过程吸收大量的氧化剂，从而结合晶片。 该方法可用于在绝缘膜上生长硅并形成用于硅传感器的微机械结构
-
-
-
-
-
-
-
-
Search Results
24
records
(took 0.019 seconds)
