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公开(公告)号：KR1020020087745A
公开(公告)日：2002-11-23
申请号：KR1020010026737
申请日：2001-05-16
Applicant: 한국과학기술연구원
IPC: H01L21/66
Abstract: PURPOSE: A method for destructive strength test of thin film are provided to measure destructive strength by electromigration phenomenon generating in a line. CONSTITUTION: A line(13) is formed of a materiel of good atomic diffusion. The anode(16) of the line is formed of a material of bad atomic diffusion. A thin film of non-conductive material is coated on the line. Applying current to the line, destruction by compressive stress on the anode is estimated by controlling current density of the line.
Abstract translation: 目的：提供一种薄膜的破坏强度试验方法，以通过线中电迁移现象来测量破坏强度。 构成：线（13）由良好的原子扩散材料形成。 线的阳极（16）由原子扩散不良的材料形成。 线路上涂有非导电材料薄膜。 将电流施加到线路上，通过控制线路的电流密度来估计阳极上的压应力的破坏。
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公开(公告)号：KR100655640B1
公开(公告)日：2006-12-11
申请号：KR1020040033600
申请日：2004-05-12
Applicant: 한국과학기술연구원
Abstract: 본 발명은 고밀도 나노와이어 수소센서에 관한 것으로, 나노 크기의 금속와이어들이 1 cm
2 당 10
5 ~ 10
9 개 정도의 고밀도로 규칙적으로 배열되어 있어 수소 감지능력이 향상되고 소비전력도 크게 감소된다. 이러한 수소센서는 규칙 배열된 나노홀을 갖는 마스크를 이용하여 전기도금에 의하여 제조하므로 경제성 및 산업상 응용에 매우 유리하다.
수소센서, 나노와이어-
公开(公告)号：KR100450260B1
公开(公告)日：2004-09-30
申请号：KR1020010026737
申请日：2001-05-16
Applicant: 한국과학기술연구원
IPC: H01L21/66
Abstract: PURPOSE: A method for destructive strength test of thin film are provided to measure destructive strength by electromigration phenomenon generating in a line. CONSTITUTION: A line(13) is formed of a materiel of good atomic diffusion. The anode(16) of the line is formed of a material of bad atomic diffusion. A thin film of non-conductive material is coated on the line. Applying current to the line, destruction by compressive stress on the anode is estimated by controlling current density of the line.
Abstract translation: 目的：提供一种薄膜破坏强度测试方法，用于测量线路中产生的电迁移现象造成的破坏强度。 构成：线（13）由原子扩散良好的物质构成。 线路的阳极（16）由原子扩散不好的材料形成。 生产线上涂有一层非导电材料薄膜。 对线路施加电流，通过控制线路的电流密度来估计阳极上的压缩应力造成的破坏。
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Patent Agency Ranking
公开(公告)号：KR1020040021459A
公开(公告)日：2004-03-10
申请号：KR1020020053306
申请日：2002-09-04
Applicant: 한국과학기술연구원
IPC: H01L43/00 , C30B29/38 , H01F10/193
CPC classification number: B82Y25/00 , B82Y40/00 , H01F1/404 , H01F10/193 , H01F10/3213 , H01F41/30 , H01L21/0242 , H01L21/0254 , H01L21/02543 , H01L21/02573 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L29/66984 , H01L33/40 , H01L43/08 , H01L43/10
Abstract: PURPOSE: A room temperature operating ferromagnetic semiconductor fabricated by a PEMBE(Plasma-enhanced Molecular Beam Epitaxy) method and an electronic device using the same are provided to apply the magnetic semiconductor to a spin electron device by obtaining a characteristic of the magnetic semiconductor in the room temperature. CONSTITUTION: A room temperature operating ferromagnetic semiconductor fabricated by a PEMBE method includes a compound semiconductor of the third to the fifth group. The compound semiconductor is formed with one element A selected from Ga, Al, and In and one element B selected from N and P. The element A of the compound semiconductor is replaced by one element C selected from Mn, Mg, Co, Fe, Ni, Cr, and V. The Curie temperature of the room temperature operating magnetic semiconductor is more than the room temperature.
Abstract translation: 目的：提供通过PEMBE（等离子体增强分子束外延）方法制造的室温操作铁磁半导体和使用其的电子器件，以通过获得磁性半导体的特性，将磁性半导体施加到自旋电子器件 室内温度。 构成：通过PEMBE法制造的室温操作铁磁半导体包括第三至第五组的化合物半导体。 化合物半导体由选自Ga，Al和In的一种元素A和选自N和P的一种元素B形成。化合物半导体的元素A被选自Mn，Mg，Co，Fe， Ni，Cr和V.室温操作磁性半导体的居里温度大于室温。
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公开(公告)号：KR100666729B1
公开(公告)日：2007-01-09
申请号：KR1020050062311
申请日：2005-07-11
Applicant: 한국과학기술연구원
Abstract: A method for manufacturing room temperature nano-belts ZnS ferromagnetic semiconductor is provided to realize spintronics by growing ZnS nano-belts doped with Mn and Fe on a substrate. A semiconductor manufacture apparatus is comprised of a reaction chamber(1), a quartz tube(3), and an alumina boat(7) for accommodating a mixed powder. A substrate(5) coated with Au colloid and a mixed powder made of ZnO, FeS, and MnCl2 are placed in an inner of the reactive chamber. The mixed powder is heated to be vaporized. Upon supplying Ar gas into the reactive chamber and moving the vaporized mixed powder, ZnS nano-belts doped with Mn and Fe is grown on the substrate.
Abstract translation: 提供制造室温纳米带ZnS铁磁半导体的方法，通过在衬底上生长掺杂有Mn和Fe的ZnS纳米带来实现自旋电子学。 半导体制造装置由用于容纳混合粉末的反应室（1），石英管（3）和氧化铝舟（7）组成。 将涂有Au胶体的基材（5）和由ZnO，FeS和MnCl 2制成的混合粉末放置在反应室的内部。 混合的粉末被加热以汽化。 在将Ar气体供应到反应室中并移动蒸发的混合粉末时，在衬底上生长掺杂有Mn和Fe的ZnS纳米带。
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公开(公告)号：KR1020050108646A
公开(公告)日：2005-11-17
申请号：KR1020040033600
申请日：2004-05-12
Applicant: 한국과학기술연구원
CPC classification number: G01N33/005 , G01N27/4146
Abstract: 본 발명은 고밀도 나노와이어 수소센서에 관한 것으로, 나노 크기의 금속와이어들이 1 cm
2 당 10
5 ~ 10
9 개 정도의 고밀도로 규칙적으로 배열되어 있어 수소 감지능력이 향상되고 소비전력도 크게 감소된다. 이러한 수소센서는 규칙 배열된 나노홀을 갖는 마스크를 이용하여 전기도금에 의하여 제조하므로 경제성 및 산업상 응용에 매우 유리하다.-
公开(公告)号：KR100533648B1
公开(公告)日：2005-12-06
申请号：KR1020030016173
申请日：2003-03-14
Applicant: 한국과학기술연구원
IPC: G11B5/39
CPC classification number: H01F10/1936 , C25D3/54 , C25D5/50 , G11C11/14 , H01F1/401 , H01F41/18 , H01F41/26 , H01L43/12
Abstract: 본 발명은 상온에서 큰 자기저항을 갖는 반금속 Bi 박막과 이를 이용한 스핀트로닉스 소자의 제조에 관한 것이다. 본 발명의 Bi 박막은 전기도금법과 스퍼터링법에 의하여 제조할 수 있으며, 상온에서 매우 큰 자기저항의 특성을 보이므로 다양한 스핀전자소자로 응용될수 있다.
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公开(公告)号：KR1020020087640A
公开(公告)日：2002-11-23
申请号：KR1020010026486
申请日：2001-05-15
Applicant: 한국과학기술연구원
IPC: G11B5/39
CPC classification number: B82Y25/00 , B82Y40/00 , H01F41/307 , H01L43/12 , Y10T29/49044
Abstract: PURPOSE: A magnetic tunnel junction device and a thermal anneal method thereof are provided to improve the TMR(Tunneling Magnetoresistance) rate and optimize the characteristics of the device in a shorter time more effectively by reducing the bent of an oxide layer(Tunnel Barrier Layer). CONSTITUTION: A magnetic tunnel junction device includes an anti-ferromagnetic layer formed of anti-ferromagnetic material, a fixed layer formed on the anti-ferromagnetic layer with a ferromagnetic material, a tunnel barrier layer(16) formed on the fixing layer with an electrically insulating material, and a free layer formed on the tunnel barrier layer with a ferromagnetic material, wherein the magnetic tunnel junction device is subject to rapid thermal anneal by heating at a temperature of 200-400°C for 10sec or less and cooled for 6min or less.
Abstract translation: 目的：提供磁隧道结器件及其热退火方法，以通过减少氧化层（隧道屏障层）的弯曲来更有效地提高TMR（隧道磁阻）速率并在更短的时间内优化器件的特性， 。 构造：磁性隧道结装置包括由反铁磁材料形成的反铁磁层，在具有铁磁材料的反铁磁层上形成的固定层，在电气上形成在固定层上的隧道势垒层（16） 绝缘材料和形成在隧道势垒层上的铁磁材料的自由层，其中磁性隧道结装置通过在200-400℃的温度下加热10秒以上并冷却6分钟进行快速热退火，或 减。
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