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公开(公告)号：KR1020120137924A
公开(公告)日：2012-12-24
申请号：KR1020110057101
申请日：2011-06-13
Applicant: 한국과학기술원
IPC: C09K11/00
Abstract: PURPOSE: A synthetic method quantum dots and synthesis are provided to control pressure at high temperature without limiting the volume of a reactor, to control the condition of a whole specimen regardless of the volume of a reactor. CONSTITUTION: A synthetic method quantum dots and synthesis comprises: a step of injecting a cation compound, an anion compound, a surfactant and a solvent into a high-pressure reactor, and mixing the materials, and increasing the temperature and pressure of the mixture; a step of temporarily generating nucleus; and a step of growing quantum dots in order. The amount of the cation compound, anion compound and the surfactant are 0.001-10 mmol, 0.001-10 mmol and 0.001-100, respectively. [Reference numerals] (AA) Heating reaction solution; (BB) Suddenly decreasing pressure; (CC) Quantum dot nucleation/growth; (DD) Sudden increase/decrease of pressure; (EE) Completion of quantum dot growth
Abstract translation: 目的：提供合成方法量子点和合成来控制高温下的压力而不限制反应器的体积，以控制整个样品的状态，而与反应器的体积无关。 构成：合成方法量子点和合成包括：将阳离子化合物，阴离子化合物，表面活性剂和溶剂注入高压反应器中，并混合该材料并提高混合物的温度和压力的步骤; 暂时产生核的一个步骤; 以及顺序生长量子点的步骤。 阳离子化合物，阴离子化合物和表面活性剂的量分别为0.001-10mmol，0.001-10mmol和0.001-100。 （标号）（AA）加热反应溶液; （BB）突然减压; （CC）量子点成核/生长; （DD）压力突然增加/减少; （EE）完成量子点增长
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公开(公告)号：KR1020120095200A
公开(公告)日：2012-08-28
申请号：KR1020110014726
申请日：2011-02-18
Applicant: 한국과학기술원
Abstract: PURPOSE: A manufacturing method of a nitridosilicate based compound is provided to provide nitridosilicate with economic and excellent phosphor performance by using a simple device under atmospheric pressure, low reaction temperature, and relatively short reaction time by a process of a one step. CONSTITUTION: A manufacturing method of a nitridosilicate based compound comprises: a step of obtaining a mixture by mixing an alkaline earth metal compound, a rare earth metal compound, a silicon compound, and a nitrogen compound for 2-24 hours; a step of heat-treating the mixture at 1200-2000 °C for 1-24 hours in gas having a gas flow rate of 1-1000 mL/minute under atmospheric pressure. The alkaline rare earth metal compound is at least one or more selected from oxide of alkaline rare earth metal, oxide, sulfide, chloride, bromides, iodide, carbonate, organic/inorganic acid salts, and nitrates.
Abstract translation: 目的：提供一种基于氮化硅酸盐的化合物的制造方法，通过在大气压下，低反应温度和相对较短的反应时间通过一步的方法，通过使用简单的装置，提供具有经济和优异的荧光体性能的氮化硅酸盐。 构成：一种基于氮化硅酸盐的化合物的制造方法包括：通过将碱土金属化合物，稀土金属化合物，硅化合物和氮化合物混合2-24小时获得混合物的步骤; 在大气压下在气体流量为1-1000mL /分钟的气体中，在1200-2000℃下将混合物热处理1-24小时的步骤。 碱土金属化合物是选自碱土金属，氧化物，硫化物，氯化物，溴化物，碘化物，碳酸盐，有机/无机酸盐和硝酸盐的氧化物中的至少一种以上。
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13.发明授权엑스선 디지털 이미지 센서 장치, 엑스선 디지털 이미지 장치 및 엑스선 디지털 이미지 센서 제조 방법 有权用于X射线数字图像的传感器装置，用于X射线的数字图像装置，以及X射线数字图像传感器的制造方法
公开(公告)号：KR101078694B1
公开(公告)日：2011-11-01
申请号：KR1020090099974
申请日：2009-10-20
Applicant: 한국과학기술원
IPC: H01L27/146 , A61B6/12
Abstract: 엑스선디지털이미지센서장치, 엑스선디지털이미지장치및 엑스선디지털이미지센서제조방법이개시된다. 본발명은기판; 픽셀단위면적당포토다이오드면적비율을감소시켜소정의값 이하의면적을가지는포토다이오드를포함하고, 상기기판위의각각의픽셀에대응하는복수의이미지센서; 상기복수의이미지센서각각의포토다이오드위에접합된마이크로렌즈; 및상기마이크로렌즈위에증착되어픽셀화된섬광체를포함하는, 엑스선디지털이미지센서장치를제공한다. 본발명의실시예들에의하면, 엑스선이미지센서의구조를개선함으로써, 이미지센서의각 픽셀위에서섬광된빛을다른픽셀로크로스토킹되지않고해당픽셀에서바로수광하여전기적신호로변환된유효신호를향상시킬수 있고, 엑스선촬영에요구되는환자의피폭량의감소시킬수 있다.
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公开(公告)号：KR101311688B1
公开(公告)日：2013-09-25
申请号：KR1020130057729
申请日：2013-05-22
Applicant: 엘지이노텍 주식회사 , 한국과학기술원
Abstract: 본 발명은 양자점의 핵 성장 단계에서 단일 공정으로 실리카 소스 물질을 주입하는 것을 특징으로 하는 단일공정에 의한 양자점/실리카 복합체의 제조방법에 관한 것으로, 보다 상세하게는 상기 단일공정은 (i) 양자점의 핵 성장에서 양자점 표면에 붙어 있는 alkyl-thiol 리간드를 극성을 가지는 리간드 또는 hydroxide기가 부착된 리간드로 치환하는 단계; 및 (ii) 실리카층의 형성에서 alkoxysilane 또는 silanol 작용기를 포함하고, 염기성 작용기를 포함하는 실란제를 주입하는 단계; 를 포함하는 것을 특징으로 할 수 있다.
본 발명에 의하면 종래의 여러 단계의 공정을 한 단계의 반응으로 줄일 수 있고, 별도의 정제 과정 또한 불필요하며, 신속하고, 안정성 또한 매우 높다. 나아가 본 발명의 기술은 발광 소자, 디스플레이 패널, LED 등의 시장 적용성이 우수하다.-
公开(公告)号：KR1020130016910A
公开(公告)日：2013-02-19
申请号：KR1020110079114
申请日：2011-08-09
Applicant: 한국과학기술원 , 엘지이노텍 주식회사
CPC classification number: H01L21/02557 , B82Y10/00 , H01L21/02568 , H01L21/02601 , H01L21/02628 , H01L29/127
Abstract: PURPOSE: A manufacturing method of a quantum dot/silica composite is provided to reduce the number of processes to one reaction, to not need a separate purification process, to have a fast reaction rate, and to quantitatively control a quantum dot/ silica composite. CONSTITUTION: A manufacturing method of a quantum dot/silica composite comprises: a step of injecting a silica source material to a simple process in a nucleus growth step of a quantum dot. The single process comprises: a step of substituting an alkyl-thiol ligand attached to the quantum dot surface by a ligand with a polarity or a ligand with a hydroxide group; and a step of injecting a silane coupling agent, which comprises alkoxysilane or silanol functional group and a basic functional group when forming a silica layer.
Abstract translation: 目的：提供量子点/二氧化硅复合材料的制造方法，以减少一个反应的过程，不需要单独的纯化过程，具有快速的反应速率，并定量控制量子点/二氧化硅复合材料。 构成：量子点/二氧化硅复合体的制造方法包括：在量子点的核生长步骤中将二氧化硅源材料注入简单工序的工序。 单一方法包括：通过具有极性的配体或具有氢氧基的配体取代连接到量子点表面的烷基 - 硫醇配体的步骤; 以及在形成二氧化硅层时注入包含烷氧基硅烷或硅烷醇官能团和碱性官能团的硅烷偶联剂的工序。
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Patent Agency Ranking
公开(公告)号：KR101869362B1
公开(公告)日：2018-06-21
申请号：KR1020160152111
申请日：2016-11-15
Applicant: 한국과학기술원
IPC: G06F17/27
Abstract: 본발명은함의문장생성기술을활용한문장표절판단장치, 이를구현하기위한프로그램및 기록매체에관한것으로, 더욱상세하게는한글문장에대한함의문장생성기술을활용하여문장의표절여부를검사하는방법을포함한다. 본발명에따른함의문장생성기술을활용한문장표절판단장치는, 한글문장에서함의문장생성을위해상기한글문장내에서함의대상을선정하고, 언어학적자질을추출하여함의자질을추출하는함의자질추출부, 상기추출된함의자질에기초하여상기한글문장에서함의문장을생성하는함의문장생성부, 상기한글문장의원 문장과상기함의문장을통해유사도를측정하는문장유사도측정부, 및상기측정된함의문장의유사도를기반으로표절여부를판단하는표절판단부를포함한다.
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公开(公告)号：KR1020130020345A
公开(公告)日：2013-02-27
申请号：KR1020110082930
申请日：2011-08-19
Applicant: 한국과학기술원
CPC classification number: H01L33/56 , H01L33/502 , H01L2933/0041
Abstract: PURPOSE: A method for dispersing quantum dots in an encapsulant and a light emitting device using the same are provided to improve luminous efficiency by replacing a ligand of the quantum dot with a ligand to improve dispersion. CONSTITUTION: An alkyl-thiol ligand attached to the surface of a quantum dot in a nuclear growth step is replaced by an alkyl-thiol ligand with a polarity functional group. An encapsulant with dispersed quantum dots is obtained by dispersing the quantum dot with the replaced ligand to the encapsulant with a polarity. [Reference numerals] (AA) Synthesis of quantum dots; (BB) Substituting a ligand(ex. -OH) including a polar functional group for a ligand on the surface of the quantum dots; (CC) Mixed with the polymer encapsulant and curing
Abstract translation: 目的：提供一种用于将量子点分散在密封剂中的方法和使用其的发光器件，以通过用配体替换量子点的配体以改善分散度来提高发光效率。 构成：在核生长步骤中连接到量子点表面的烷基 - 硫醇配体被具有极性官能团的烷基 - 硫醇配体代替。 通过将具有取代的配体的量子点以极性分散到密封剂中，获得具有分散的量子点的密封剂。 （标号）（AA）量子点的合成; （BB）在量子点的表面上用配体（例如-OH）代替配体的极性官能团; （CC）与聚合物密封剂混合并固化
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公开(公告)号：KR1020120018490A
公开(公告)日：2012-03-05
申请号：KR1020100081350
申请日：2010-08-23
Applicant: 한국과학기술원
IPC: G02F1/1335 , G02F1/13357
CPC classification number: G02F1/133617 , G02B6/005 , G02B6/0073 , G02F1/133615 , G02F2001/133614
Abstract: PURPOSE: A white light LED(Light emitting diode) backlight unit using a quantum dot light conversion layer is provided to solve for degradation in light emitting efficiency by reducing half amplitude. CONSTITUTION: A light guide plate and a diffusion sheet(200) changes a dot emitting light emitted by a light source(100) into a surface emitting light. A quantum dot light conversion layer(300) includes a quantum dot which reproduces colors by using the surface emitting light and is separated from the light source. A polarizing plate and an LCD(Liquid Crystal Display)(400) are located on an emission path which passes through the light conversion layer.
Abstract translation: 目的：提供使用量子点光转换层的白光LED（发光二极管）背光单元，以通过减小半幅度来解决发光效率的劣化。 构成：导光板和扩散片（200）将由光源（100）发射的点发射到表面发射光。 量子点光转换层（300）包括通过使用表面发射光再现颜色并与光源分离的量子点。 偏光板和LCD（液晶显示器）（400）位于通过光转换层的发射路径上。
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20.发明公开엑스선 디지털 이미지 센서 장치, 엑스선 디지털 이미지 장치 및 엑스선 디지털 이미지 센서 제조 방법 有权用于X射线数字图像的传感器装置，用于X射线的数字图像装置，以及X射线数字图像传感器的制造方法
公开(公告)号：KR1020110043043A
公开(公告)日：2011-04-27
申请号：KR1020090099974
申请日：2009-10-20
Applicant: 한국과학기술원
IPC: H01L27/146 , A61B6/12
CPC classification number: H01L27/14625 , H01L27/14627 , H01L27/14658 , H01L27/14676 , H01L27/14685 , H04N5/32
Abstract: PURPOSE: A sensor device for an x-ray digital image, a digital image device for an x-ray, and a manufacturing method of the x-ray digital image sensor are provided to directly receive a light from a scintillator on a corresponding pixel without crosstalk with another pixels, thereby improving an effective signal. CONSTITUTION: In a sensor device for an x-ray digital image, a digital image device for an x-ray, and a manufacturing method of the x-ray digital image sensor, a plurality of image sensors(260) comprises a photo diode having an area less than a predetermined value by reducing a photo diode area ratio per unit pixel area. A plurality of image sensors are corresponded to each pixel on a substrate. A micro lens(210) is bonded in the photo diode of the each image sensor. A scintillator is deposited on the micro lens to be a pixel.
Abstract translation: 目的：提供一种用于x射线数字图像的传感器装置，用于x射线的数字图像装置和x射线数字图像传感器的制造方法，以直接从相应像素上的闪烁体接收光，而无需 与另一个像素串扰，从而改善有效信号。 构成：在用于x射线数字图像的传感器装置，用于x射线的数字图像装置和x射线数字图像传感器的制造方法中，多个图像传感器（260）包括光电二极管，其具有 通过降低每单位像素面积的光电二极管面积比而小于预定值的面积。 多个图像传感器对应于基板上的每个像素。 在每个图像传感器的光电二极管中接合微透镜（210）。 闪烁体沉积在微透镜上成为像素。
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