公开(公告)号：KR1020120026670A

公开(公告)日：2012-03-20

申请号：KR1020100088688

申请日：2010-09-10

Applicant: 한국과학기술원

Inventor： 김한흥 ,  임부택 ,  이기성 ,  유동은 ,  이동욱 ,  강민호 ,  이병주

IPC: H01L29/06 ,  H01L29/66

Abstract: PURPOSE: A radio frequency device and a method of fabricating the same are provided to reduce the contact resistance of a guard ring contact plug by forming an impurity doping region in the surface of the guard ring. CONSTITUTION: A substrate(102) comprises a first area(102a) and a second part(102b). A semiconductor layer(106) is formed on the first area of the substrate. A buried insulating layer(104) is formed between the substrate and the semiconductor layer. A plurality of inversion blocking layers(120a) is formed on the second region of the substrate. A field insulating layer(125) covers the side of the semiconductor layer and the top side of the inversion blocking layer.

Abstract translation: 目的：提供一种射频装置及其制造方法，以通过在保护环表面形成杂质掺杂区来减小保护环接触插塞的接触电阻。 构成：衬底（102）包括第一区域（102a）和第二部分（102b）。 半导体层（106）形成在基板的第一区域上。 在衬底和半导体层之间形成掩埋绝缘层（104）。 在基板的第二区域上形成多个反转阻挡层（120a）。 场绝缘层（125）覆盖半导体层的侧面和反转阻挡层的顶侧。

公开(公告)号：KR102088584B1

公开(公告)日：2020-03-12

申请号：KR1020180149849

申请日：2018-11-28

Applicant: 한국과학기술원

Inventor： 이병주 ,  임부택

IPC: B81C1/00 ,  B81B7/00

公开(公告)号：KR1020180117795A

公开(公告)日：2018-10-30

申请号：KR1020170050778

申请日：2017-04-20

Applicant: 한국과학기술원

Inventor： 임부택 ,  김희연 ,  노길선 ,  심갑섭 ,  김경민 ,  박상현

IPC: G01N27/12 ,  B82Y15/00

Abstract: 본발명은기판; 기판상에형성되되개구부를포함하는절연층; 일단부가상기절연층으로각각덮이고타단부가상기개구부에서각각노출되되, 상기개구부에서서로이격되는, 한쌍의제 1 전극패턴; 상기한 쌍의제 1 전극패턴과상기기판사이에개재되되상기절연층내에매립되어배치된제 2 전극패턴; 및상기한 쌍의제 1 전극패턴사이의이격영역을메우도록형성된, CNT 구조체;를포함하는가스센서를제공한다.

公开(公告)号：KR1020140106267A

公开(公告)日：2014-09-03

申请号：KR1020130020606

申请日：2013-02-26

Applicant: 한국과학기술원

Inventor： 김경태 ,  김한흥 ,  임부택 ,  김태현 ,  김희연 ,  황욱중

IPC: H04N5/33

CPC classification number: H04N5/3651 ,  G01J5/24 ,  H04N5/33

Abstract: The present invention provides a circuit and a method for processing a signal for the acquisition of infrared image data which can automatically correct an infrared image in an analog circuit terminal without using a memory. The circuit for processing the signal for the acquisition of the infrared image data comprises: an infrared sensing unit of which electrical resistance varies when absorbing infrared rays; a self-heating unit of which one end is electrically connected to the other end of the infrared sensing unit and which applies Joule heat to the infrared sensing unit so that the electrical resistance of the infrared sensing unit can have a predetermined reference resistance value before absorbing the infrared rays; an integrator which integrates a difference between a voltage of the other end of the self-heating unit and a reference voltage, and outputs an integrated value as an infrared signal; and a feedback control unit of which one end is electrically connected to the integrator, and which compares and controls real-time output signals of the integrator to heat or cool the infrared sensing unit so that the electrical resistance of the infrared sensing unit can maintain the predetermined reference resistance value.

Abstract translation: 本发明提供一种用于处理用于获取红外图像数据的信号的电路和方法，该信号可以在不使用存储器的情况下自动校正模拟电路终端中的红外图像。 用于处理用于获取红外图像数据的信号的电路包括：红外感测单元，其在吸收红外线时电阻变化; 一个自身加热单元，其一端电连接到红外感测单元的另一端，并且对红外线感测单元施加焦耳热，使得红外感测单元的电阻在吸收之前可以具有预定的参考电阻值 红外线; 积分器，其将自发热单元的另一端的电压与参考电压的差积分，并输出积分值作为红外信号; 以及反馈控制单元，其一端电连接到积分器，并且比较和控制积分器的实时输出信号以加热或冷却红外感测单元，使得红外感测单元的电阻可以维持 预定参考电阻值。

公开(公告)号：KR1020120054459A

公开(公告)日：2012-05-30

申请号：KR1020100115846

申请日：2010-11-19

Applicant: 한국과학기술원

Inventor： 이기성 ,  임부택 ,  유동은 ,  이동욱 ,  김한흥 ,  홍대원 ,  황욱증

IPC: H01L21/76 ,  H01L27/08

CPC classification number: H01L21/76251 ,  H01L21/76224

Abstract: PURPOSE: A method for manufacturing a radio frequency device and a semiconductor device is provided to reduce radio frequency loss by preventing by forming an inversion blocking layer. CONSTITUTION: A complex substrate having a laminating structure of a body, a buried insulating layer(104), and a semiconductor layer is provided. A trench is formed by etching the buried insulating layer and the semiconductor layer. An inversion blocking layer(120) is formed on the body within the trench. A burying protective layer(122) is formed on the inversion blocking layer in order to fill the trench. A first part of the inversion blocking layer of the semiconductor layer outside the trench is eliminated. The burying protective layer and the inversion blocking layer are flattered in order to protect a second part of the inversion blocking layer within the trench through the burying protective layer.

Abstract translation: 目的：提供一种制造射频装置和半导体装置的方法，以通过形成反转阻挡层来防止射频损失。 构成：提供具有本体层叠结构的复合衬底，埋层绝缘层（104）和半导体层。 通过蚀刻掩埋绝缘层和半导体层形成沟槽。 在沟槽内的主体上形成反转阻挡层（120）。 在反转阻挡层上形成埋入保护层（122）以填充沟槽。 沟槽外的半导体层的反转阻挡层的第一部分被消除。 掩埋保护层和反转阻挡层被覆盖以便通过掩埋保护层保护沟槽内的反转阻挡层的第二部分。