公开(公告)号：KR1020140057423A

公开(公告)日：2014-05-13

申请号：KR1020120121398

申请日：2012-10-30

Applicant: 한국전자통신연구원

Inventor： 정용덕 ,  조대형

IPC: H01L31/042 ,  H01L31/0749

CPC classification number: H01L31/0322 ,  H01L31/022425 ,  H01L31/0749 ,  Y02E10/541

Abstract: A compound semiconductor solar cell according to an embodiment of the present invention comprises: a rear electrode arranged on a substrate; a hole injection layer arranged on the rear electrode; a light absorption layer arranged on the hole injection layer; and a transparent front electrode arranged on the light absorption layer, wherein the hole injection layer is composed of metal oxide comprising one or more metal elements.

Abstract translation: 根据本发明实施例的化合物半导体太阳能电池包括：布置在基板上的后电极; 布置在后电极上的空穴注入层; 布置在空穴注入层上的光吸收层; 以及布置在所述光吸收层上的透明前电极，其中所述空穴注入层由包含一种或多种金属元素的金属氧化物构成。

公开(公告)号：KR1020140056543A

公开(公告)日：2014-05-12

申请号：KR1020120120415

申请日：2012-10-29

Applicant: 한국전자통신연구원

Inventor： 정용덕 ,  조대형 ,  한원석

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/186 ,  C23C14/5853 ,  C23C14/5866 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02614 ,  H01L31/0749 ,  H01L31/1828 ,  H01L31/1864 ,  Y02E10/50 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: Provided is a method for manufacturing a solar cell. A light absorption layer is formed on a substrate. A buffer layer is formed on the light absorption layer. A window electrode layer is formed on the buffer layer. Forming the buffer layer includes depositing a metallic material on the light absorption layer, supplying a non-metallic material on the light absorption layer, supplying a gas material which includes oxygen atom on the light absorption layer, and making the non-metallic material react with the metallic material. The gas material including oxygen atom reacts with the metallic material and the non-metallic material to form metal sulfur oxide on the light absorption layer.

Abstract translation: 提供一种太阳能电池的制造方法。 在基板上形成光吸收层。 在光吸收层上形成缓冲层。 在缓冲层上形成窗口电极层。 形成缓冲层包括在光吸收层上沉积金属材料，在光吸收层上提供非金属材料，在光吸收层上提供包含氧原子的气体材料，并使非金属材料与 金属材料。 包含氧原子的气体材料与金属材料和非金属材料反应，以在光吸收层上形成金属硫氧化物。

公开(公告)号：KR1020120054927A

公开(公告)日：2012-05-31

申请号：KR1020100116322

申请日：2010-11-22

Applicant: 한국전자통신연구원

Inventor： 정용덕

IPC: H01L31/0445

CPC classification number: H01L31/0749 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022483 ,  Y02E10/541

Abstract: PURPOSE: A compound semiconductor solar cell is provided to easily inject holes to a rear electrode by inserting a hole injection layer between the rear electrode and a light absorption layer. CONSTITUTION: A rear electrode(120) is arranged on a substrate. A hole injection layer(130) is arranged on the rear electrode. The thickness of the hole injection layer is in a range of 0.001 to 1.0μm. A light absorption layer(140) is arranged on the hole injection layer. A front transparent electrode(160) is arranged on the light absorption layer.

Abstract translation: 目的：提供一种化合物半导体太阳能电池，其通过在后电极和光吸收层之间插入空穴注入层来容易地向后电极注入空穴。 构成：背面电极（120）布置在基底上。 空穴注入层（130）布置在后电极上。 空穴注入层的厚度为0.001〜1.0μm的范围。 光吸收层（140）布置在空穴注入层上。 前透明电极（160）设置在光吸收层上。

公开(公告)号：KR1020120054365A

公开(公告)日：2012-05-30

申请号：KR1020100115710

申请日：2010-11-19

Applicant: 한국전자통신연구원

Inventor： 조대형 ,  정용덕

IPC: H01L31/0445 ,  H01L21/203

CPC classification number: H01L31/03923 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: PURPOSE: A compound semiconductor solar battery and a manufacturing method thereof are provided to reduce manufacturing costs of the solar battery by forming an impurity diffusion prevention film in the same chamber with a back side electrode. CONSTITUTION: An impurity diffusion prevention film(120) is provided to a substrate and is composed of one metal layer among chrome, cobalt, or copper. An alkali component is added to the impurity diffusion prevention film. The thickness of the impurity diffusion prevention film is 0.01 to 10micrometers. A back side electrode is provided to the impurity diffusion prevention film and is composed of molybdenum. A CIGS system light absorption layer(140) is provided to the back side electrode. A front side transparent electrode(160) is provided to the CIGS system light absorption layer.

Abstract translation: 目的：提供一种化合物半导体太阳能电池及其制造方法，以通过在与背面电极相同的室内形成杂质扩散防止膜来降低太阳能电池的制造成本。 构成：在基板上设置杂质扩散防止膜（120），由铬，钴或铜中的一层金属层构成。 向杂质扩散防止膜中添加碱成分。 杂质扩散防止膜的厚度为0.01〜10微米。 背面电极设置在杂质扩散防止膜上，由钼构成。 CIGS系统光吸收层（140）设置在背面电极上。 将前侧透明电极（160）设置到CIGS系统光吸收层。

公开(公告)号：KR1020100136790A

公开(公告)日：2010-12-29

申请号：KR1020090055080

申请日：2009-06-19

Applicant: 한국전자통신연구원

Inventor： 배성범 ,  정용덕 ,  한원석 ,  조대형 ,  김제하

IPC: H01L31/04

CPC classification number: H01L31/0322 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/072 ,  Y02E10/52 ,  Y02E10/541 ,  Y02P70/521

Abstract: PURPOSE: A copper-indium-gallium-selenium(CIGS)-based thin film solar cell and a method for manufacturing the same are provided to increase the efficiency of the solar cell by facilitating the movement of electric charges generated by solar light. CONSTITUTION: A metal electrode layer(110) is arranged on a substrate(100). The specific resistance of the metal electrode layer is low. The metal electrode layer is composed of molybdenum. An optical absorbent layer(120) is formed on the metal electrode layer. A buffer layer, containing an indium-gallium nitride film, is formed on the optical absorbent layer(130). A transparent electrode layer(140) is formed on the buffer layer.

Abstract translation: 目的：提供一种基于铜铟镓硒（CIGS）的薄膜太阳能电池及其制造方法，以通过促进太阳光产生的电荷的移动来提高太阳能电池的效率。 构成：在基板（100）上配置金属电极层（110）。 金属电极层的电阻率低。 金属电极层由钼构成。 在金属电极层上形成光吸收层（120）。 在光吸收层（130）上形成有含有氮化铟镓膜的缓冲层。 在缓冲层上形成透明电极层（140）。

公开(公告)号：KR100883128B1

公开(公告)日：2009-02-10

申请号：KR1020070046710

申请日：2007-05-14

Applicant: 한국전자통신연구원

Inventor： 최광성 ,  정용덕 ,  심재식 ,  문종태 ,  유현규 ,  김제하

IPC: H04B10/00 ,  H04B10/40

CPC classification number: H04B10/25752 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: 본 발명은 광소자, 필터, 증폭기 및 안테나가 하이브리드 집적되어 있는 광 하이브리드 모듈에 관한 것으로, 본 광 하이브리드 모듈은 기판 상에 설치되며, 광파이버 및 광소자가 마련되어 있는 실리콘 광 벤치; 상기 기판 상에 설치되며, 상기 실리콘 광 벤치에 마련된 상기 광소자와 연결되어 상기 광소자에서 전송된 신호를 증폭하는 증폭기; 상기 기판 상에 형성되며 상기 증폭기와 연결되는 안테나를 포함한다. 이에 따라, 단층 또는 다층 기판에 안테나와 필터를 구현하고 광소자와 증폭기에 필요한 바이어스를 솔더볼을 통해 공급하므로 작은 크기(foot print)의 모듈을 구현할 수 있다. 또한, 기판에 안테나와 필터가 구현되므로 고가의 커넥터가 필요하지 않으므로, 제조 원가를 절감할 수 있다.
광 하이브리드 모듈, 광소자, 증폭기, 안테나, 실리콘 광 벤치

公开(公告)号：KR1020080052235A

公开(公告)日：2008-06-11

申请号：KR1020070057091

申请日：2007-06-12

Applicant: 한국전자통신연구원

Inventor： 정용덕 ,  최광성 ,  심재식 ,  김제하

IPC: G02B6/12 ,  G02B26/00

Abstract: A reflection type optical modulator is provided to obtain a sufficient extinction ratio by forming a non-reflective layer on a light input/output surface and forming a high-reflective layer on a surface opposite to the input/output surface. A reflection type optical modulator includes a waveguide(22), a non-reflective thin film(28), and a high-reflective thin film(29). The waveguide includes an absorbing layer formed on a substrate. The non-reflective thin film is formed on one surface of the waveguide and the high-reflective thin film is formed on the other surface. The reflection type optical modulator further includes a lens type optical fiber(32) which is formed on a region adjacent to the non-reflective thin film in order to perform a light inputting/outputting operation. The non-reflective thin film is formed by using TiO2 and SiO2. The high-reflective thin film is formed by using SiO2 and Si.

Abstract translation: 提供了一种反射型光学调制器，以通过在光输入/输出表面上形成非反射层以在与输入/输出表面相对的表面上形成高反射层来获得足够的消光比。 反射型光调制器包括波导（22），非反射薄膜（28）和高反射​​薄膜（29）。 波导包括形成在基板上的吸收层。 非反射薄膜形成在波导的一个表面上，高反射薄膜形成在另一个表面上。 反射型光调制器还包括透镜型光纤（32），其形成在与非反射薄膜相邻的区域上，以进行光输入/输出操作。 通过使用TiO 2和SiO 2形成非反射性薄膜。 通过使用SiO 2和Si形成高反射性薄膜。

公开(公告)号：KR100759271B1

公开(公告)日：2007-09-17

申请号：KR1020060077474

申请日：2006-08-17

Applicant: 한국전자통신연구원

Inventor： 최광성 ,  강영식 ,  정용덕 ,  심재식 ,  김제하 ,  문종태

IPC: H04B10/40 ,  H04B10/2575

CPC classification number: H04B10/40 ,  H04B10/2575

Abstract: An optical transceiver used in an RoF(Radio-over-Fiber) communication system is provided to mount both of an optical receiving device, an optical modulation device, and a patch antenna on one module, thereby reducing footprint of the optical transceiver which will be used in a base station in the RoF system. A first optical fiber(250) is a path for transmitting an optical signal from a telephone station to a base station. An optical receiving device(210) receives the optical signal transmitted form the telephone station to the base station through the first optical fiber, and converts the signal into an electric signal. A second optical fiber(252) is a path for transmitting the optical signal which is transmitted from the telephone station to the base station and passes through the optical receiving device. An optical modulation device(230) modulates an electric signal, inputted from the outside, to the optical signal transmitted through the second optical fiber. A third optical fiber(254) is a path for transmitting the optical signal, modulated by the optical modulation device, from the base station to the telephone station.

Abstract translation: 在RoF（Fiber-over-Fiber）无线通信系统中使用的光收发器被提供以在一个模块上安装光接收设备，光调制设备和贴片天线，从而减少光收发器的占用面积，这将是 用于RoF系统中的基站。 第一光纤（250）是用于将光信号从电话台发送到基站的路径。 光接收装置（210）通过第一光纤接收从电话台发送到基站的光信号，并将该信号转换为电信号。 第二光纤（252）是用于发送从电话台向基站发送并通过光接收装置的光信号的路径。 光调制装置（230）将从外部输入的电信号调制到通过第二光纤传输的光信号。 第三光纤（254）是用于将由光调制装置调制的光信号从基站发送到电话台的路径。

公开(公告)号：KR100737348B1

公开(公告)日：2007-07-09

申请号：KR1020040105699

申请日：2004-12-14

Applicant: 한국전자통신연구원

Inventor： 강영식 ,  김제하 ,  권용환 ,  정용덕

IPC: G02B6/12 ,  G02B26/00 ,  G02F1/025

CPC classification number: G02F1/01708 ,  B82Y20/00 ,  G02B6/1228 ,  G02B6/136

Abstract: 본 발명은 이중 도파로 구조의 전계흡수형 광 변조기에 관한 것으로, 제1 및 제2 광 도파로 사이에 2개의 광 모드 변환기를 함께 집적함으로써, 광섬유와 광 변조기 사이의 삽입 손실을 줄이며 높은 입력 광파워에서도 양호하게 동작할 수 있는 전계흡수형 광 변조기를 개시한다. 이러한 구성에 의하면, 광결합 손실을 줄이며 광갇힘인자(OCF)를 작게함으로써, 보다 큰 입력 광파워에서도 안정적 동작하는 전계흡수형 광 변조기를 제공할 수 있다.
이중 도파로, 양자우물, 광 모드 변환기, 광 변조기

公开(公告)号：KR1020070059816A

公开(公告)日：2007-06-12

申请号：KR1020060014685

申请日：2006-02-15

Applicant: 한국전자통신연구원

Inventor： 강영식 ,  김제하 ,  김성복 ,  정용덕 ,  최광성

IPC: H01S5/026

CPC classification number: H01S5/026 ,  H01S5/0262 ,  H01S5/0265 ,  H01S5/1014 ,  H01S5/22 ,  H01S5/50

Abstract: An optically boosted electro-absorption duplexer is provided to realize a base station at low cost by performing monolithic integration through general photolithography, dry etching, and selective wet etching without using a selective area growth or butt-joint coupling method. An optically boosted electro-absorption duplexer includes a substrate(120E). A separation area(100) is formed with a first epitaxial layer composed of at least one material layer on the substrate(120E). The separation area(100) includes a first optical waveguide(100W). A photo-detecting modulating unit(200) is formed with a second epitaxial layer composed of at least one material layer on the first epitaxial layer. The photo-detecting modulating unit(200) detects and modulates an optical signal and includes a second optical waveguide(300W). An optical amplifying unit(300) is formed with a third epitaxial layer composed of at least one material layer on the second epitaxial layer. The optical amplifying unit(300) amplifies the optical signal and includes the second optical waveguide(300W) and a third optical waveguide(500W). The optical amplifying unit(300) and the photo-detecting modulating unit(200) are electrically separated from each other at the separation area(100). The optical amplifying unit(300) is formed on at least one side of the photo-detecting modulating unit(200).

Abstract translation: 提供一种光学增强的电吸收双工器，以通过通常的光刻，干法蚀刻和选择性湿法蚀刻而不使用选择性区域生长或对接耦合方法来实现低成本的基站。 光学增强的电吸收双工器包括基板（120E）。 分离区（100）形成有由衬底（120E）上的至少一个材料层构成的第一外延层。 分离区域（100）包括第一光波导（100W）。 光检测调制单元（200）形成有由第一外延层上的至少一个材料层构成的第二外延层。 光检测调制单元（200）检测并调制光信号，并包括第二光波导（300W）。 光放大单元（300）形成有由第二外延层上的至少一个材料层构成的第三外延层。 光放大单元（300）放大光信号，并包括第二光波导（300W）和第三光波导（500W）。 光学放大单元（300）和光电检测调制单元（200）在分离区域（100）处彼此电分离。 光放大单元（300）形成在光检测调制单元（200）的至少一侧。