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公开(公告)号：KR1020170086907A
公开(公告)日：2017-07-27
申请号：KR1020160006517
申请日：2016-01-19
Applicant: 한국전자통신연구원
IPC: H01L21/02 , H01L21/04 , H01L21/324 , H01L21/3215
Abstract: 본발명은반도체소자의선택적도핑방법에관한것이다. 이에따른본 발명은, 반도체소자의선택적도핑방법으로, 기판상에증착된희생층상에도핑영역을정의하기위한마스크층을형성하는단계, 상기마스크층 상에증착되는도펀트물질을상기기판내부로확산하여도핑영역을형성하는제1 열처리단계, 상기도핑영역으로확산된도펀트물질을활성화하는제2 열처리단계및 상기희생층을제거하는단계를포함하는것을특징으로하는선택적도핑방법에관한것이다.
Abstract translation: 本发明涉及一种半导体器件的选择性掺杂方法。 在本发明中，半导体器件的选择性掺杂方法，包括：形成掩模层，以限定一个掺杂区域沉积在基底上的牺牲层上，使掺杂剂扩散的材料被沉积在掩模层到衬底按照 第一热处理以形成一个掺杂区，用于激活掺杂剂材料扩散到掺杂区和一个选择性掺杂方法，包括移除所述牺牲层的步骤的第2热处理工序。
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公开(公告)号：KR1020140029564A
公开(公告)日：2014-03-11
申请号：KR1020120094258
申请日：2012-08-28
Applicant: 한국전자통신연구원
IPC: G02B6/42
CPC classification number: G02B6/4274 , G02B6/4249 , G02B6/4263 , G02B6/4279
Abstract: The present invention relates to a multi-channel receiver optical sub assembly, including: a multi-channel PD array in which a number of photo diodes (PD) which are arranged on a first capacitor and include a receiver part arranged on the center and an anode electrode pad arranged in an opposite direction of 180° between PDs adjacent to the receiver part are monolithic-integrated; a number of transimpedance amplifiers (TIA) which are arranged on a number of second capacitors, and are connected to the anode electrode pad of each PD through wire bonding; a sub mount in which the first capacitor, the second capacitors and a number of transmisson lines are embedded; and a transistor outline (TO) comprising a plurality of pins including a power pin to supply a power source voltage to the multiple PDs and the multiple TIAs through the multiple transmission lines, a ground pin to supply a ground voltage to the multiple TIAs and an output pin to output a signal of the multiple TIAs. The sub mount is embedded in the TO.
Abstract translation: 本发明涉及一种多通道接收机光学子组件，其包括：多通道PD阵列，其中布置在第一电容器上并包括布置在中心的接收器部分的多个光电二极管（PD）和 在与接收器部分相邻的PD之间以相反方向180°布置的阳极电极焊盘是单片集成的; 多个跨阻放大器（TIA），其布置在多个第二电容器上，并且通过引线接合连接到每个PD的阳极电极焊盘; 其中嵌入有第一电容器，第二电容器和多个透射线; 以及包括多个引脚的晶体管轮廓（TO），所述多个引脚包括电源引脚，以通过所述多个传输线向所述多个PD提供电源电压和所述多个TIA;接地引脚，用于向所述多个TIA提供接地电压，以及 输出引脚输出多个TIA的信号。 子安装座嵌入到TO中。
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公开(公告)号：KR1020120134347A
公开(公告)日：2012-12-12
申请号：KR1020110053198
申请日：2011-06-02
Applicant: 한국전자통신연구원
CPC classification number: H01L33/005 , B82Y20/00 , G02B6/305 , G02B6/4206 , H01L33/0045 , H01L33/20 , H01L2933/0016 , H01L2933/0058 , H01S5/02216 , H01S5/02284 , H01S5/026 , H01S5/06226 , H01S5/101 , H01S5/1014 , H01S5/141 , H01S5/2213 , H01S5/2224 , H01S5/2231 , H01S5/34306 , H01S2301/176
Abstract: PURPOSE: A super luminescent diode, a manufacturing method thereof, and a wavelength-tunable external resonance laser including the same are provided to minimize parasitic capacitance between an active layer and a pad using a flat layer of a polyimide material. CONSTITUTION: An active waveguide(30) is formed in an active region(12) on a substrate(10). A junction waveguide(50) is formed at an optical mode changing region(14) A flat layer(40) includes polyimide or a polymer BCB(benzocyclobutene). A first pad(44) can be arranged on the top of the flat layer. The first pad is connected to an upper electrode(42) on the active waveguide. The flat layer minimizes the parasitic capacitance between the first pad and the active waveguide. The active waveguide generates laser light with currents which are applied to an upper electrode and the first pad.
Abstract translation: 目的：提供超级发光二极管及其制造方法以及包括该超发光二极管的波长可调谐外部谐振激光器，以使聚酰亚胺材料的平坦层中的有源层和焊盘之间的寄生电容最小化。 构成：在衬底（10）上的有源区（12）中形成有源波导（30）。 在光学模式改变区域（14）处形成结波导（50）。平坦层（40）包括聚酰亚胺或聚合物BCB（苯并环丁烯）。 第一垫（44）可以布置在平坦层的顶部上。 第一焊盘连接到有源波导上的上电极（42）。 平坦层使第一焊盘和有源波导之间的寄生电容最小化。 有源波导产生具有施加到上电极和第一焊盘的电流的激光。
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公开(公告)号：KR1020120057343A
公开(公告)日：2012-06-05
申请号：KR1020100119030
申请日：2010-11-26
Applicant: 한국전자통신연구원
CPC classification number: H01S5/141 , H01S3/07 , H01S3/08027 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/4062 , H01S2301/16
Abstract: PURPOSE: A light generating device is provided to improve reliability by preventing resonance of noise components. CONSTITUTION: A light generating device(100) comprises first and second reflective semiconductor optical amplifiers(111,113), lenses(121,123,125,127), an optical comb filter(130), and an optical distributor(140). The first reflective semiconductor optical amplifier emits first light along a first direction. The second reflective semiconductor optical amplifier faces with the first reflective semiconductor optical amplifier and emits second light to an opposite direction of the first direction. The optical distributor is formed between the first and second reflective semiconductor optical amplifiers. The optical distributor reflects parts of incidence light and perforates the rest of the light. The optical comb filter is formed between the optical distributor and the first reflective semiconductor optical amplifier and perforates wavelength components of a specific cycle.
Abstract translation: 目的：提供一种发光装置，通过防止噪声成分的共振来提高可靠性。 构成：发光装置（100）包括第一和第二反射半导体光放大器（111,113），透镜（121,123,125,127），光梳滤波器（130）和光分配器（140）。 第一反射半导体光放大器沿着第一方向发射第一光。 第二反射半导体光放大器与第一反射半导体光放大器面对，并将第二光发射到与第一方向相反的方向。 光分配器形成在第一和第二反射半导体光放大器之间。 光学分配器反映入射光的一部分并穿透其余的光。 光梳状滤波器形成在光分配器和第一反射半导体光放大器之间并穿孔特定周期的波长分量。
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公开(公告)号：KR101086777B1
公开(公告)日：2011-11-25
申请号：KR1020090080500
申请日：2009-08-28
Applicant: 한국전자통신연구원
IPC: G02B6/12
Abstract: 본 발명에 따른 광증폭기는, 입사된 광신호를 입력받아 모드를 조절하는 수동 도파로 영역, 및 상기 수동 도파로 영역에 연결되고, 인가되는 전류에 의해 운반자의 농도를 가변함으로써 상기 수동 도파로 영역을 통과한 광신호의 이득을 변조하는 능동 도파로 영역을 형성하는 것을 포함하되, 상기 능동 도파로 영역은, 내부 손실 조절을 통한 공진 현상을 발생시킴으로써, 대역폭을 확장시킬 수 있게 된다. 이로써, 본 발명에 따른 광증폭기는 저전류에서도 넓은 주파수 대역폭을 확보할 수 있다.
SOA, RSOA, 내부 손실, 대역폭, 공진현상-
Patent Agency Ranking
公开(公告)号：KR1020110041221A
公开(公告)日：2011-04-21
申请号：KR1020090098292
申请日：2009-10-15
Applicant: 한국전자통신연구원
IPC: H01L21/20
Abstract: PURPOSE: A method for manufacturing a quantum dot using a patterned strained layer and a quantum dot semiconductor device made by the same are provided to form the quantum dot with high uniformity and density by using the patterned strained layer as a seed layer. CONSTITUTION: A patterned strained layer(530a) and a patterned first capping layer(550a) are formed on a substrate(510) by patterning the first capping layer and the strained layer using an etching mask. A second capping layer(570) is formed after the first capping layer and the strained layer are patterned with a lattice format. A quantum dot forming material is formed on the upper side of the second capping layer. A plurality of self-formed quantum dots(590a) are formed on the upper side of the second capping layer.
Abstract translation: 目的：提供一种使用图案化的应变层制造量子点的方法及其制造的量子点半导体器件，通过使用图案化的应变层作为种子层，形成具有高均匀性和密度的量子点。 构成：通过使用蚀刻掩模图案化第一覆盖层和应变层，在衬底（510）上形成图案化的应变层（530a）和图案化的第一覆盖层（550a）。 在第一覆盖层之后形成第二覆盖层（570），并且使用晶格格式对应变层进行图案化。 量子点形成材料形成在第二封盖层的上侧。 多个自形成量子点（590a）形成在第二封盖层的上侧。
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公开(公告)号：KR1020050025387A
公开(公告)日：2005-03-14
申请号：KR1020030062417
申请日：2003-09-06
Applicant: 한국전자통신연구원
IPC: G02B6/42
CPC classification number: H04B10/43
Abstract: An optical transceiver is provided to improve receiving quality by reducing crosstalk between optical receiving and transmitting elements on a silicon substrate using a dummy ground line formed on the substrate. An operation transceiver includes a photoelectric transducer and an optical signal transfer unit. The photoelectric transducer is disposed on a substrate and includes a light transmitting device(2210), a high speed signal line(2220), and a bias line(2230) for the light transmitting device. The light transmitting device converts an electrical signal to an optical signal. A light receiving device(2260), a high speed signal line(2270), and a bias line(2280) for the light receiving device are also included in the photoelectric transducer. The light receiving device converts the optical signal to an electrical signal. A first dummy ground line(2290) is adjacent to the high speed signal line of the light transmitting device. A second dummy ground line(2295) is adjacent to the high speed signal line of the light receiving device. The optical signal transfer unit is connected to the photoelectric transducer and delivers the received optical signal to the light receiving device. The optical signal from the light transmitting device is transferred to an optical fiber by the optical signal transfer unit.
Abstract translation: 提供光收发器以通过使用形成在基板上的虚拟接地线减少硅衬底上的光接收和发射元件之间的串扰来提高接收质量。 操作收发器包括光电换能器和光信号传送单元。 光电传感器设置在基板上，包括用于光发射装置的光发射装置（2210），高速信号线（2220）和偏置线（2230）。 光发送装置将电信号转换为光信号。 光接收装置中还包括光接收装置（2260），高速信号线（2270）和用于光接收装置的偏置线（2280）。 光接收装置将光信号转换为电信号。 第一伪接地线（2290）与光发射装置的高速信号线相邻。 第二伪接地线（2295）与光接收装置的高速信号线相邻。 光信号传送单元连接到光电传感器并将接收到的光信号传送到光接收装置。 来自光发送装置的光信号由光信号传送单元传送到光纤。
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公开(公告)号：KR101781411B1
公开(公告)日：2017-10-24
申请号：KR1020140104382
申请日：2014-08-12
Applicant: 한국전자통신연구원
Inventor： 최병석
IPC: H04B10/572 , H04J14/02 , H04B10/50
CPC classification number: H01S5/141 , H01S3/10053 , H01S3/106 , H01S5/0612 , H01S5/0617
Abstract: 파장가변광원구현방법및 장치가개시되어있다.외부공진기형파장가변광원의파장을제어하는방법은히터파워에따른파장변화를나타내는파장가변곡선을상기외부공진기형파장가변광원이가변가능한파장범위까지획득하는 1차캘리브레이션을수행하는단계, 상기가변가능한파장범위의디튜닝곡선을획득하는 2차캘리브레이션을수행하는단계및 파장잠금을수행하여파장을설정하는단계를포함할수 있다.
Abstract translation: 公开了实现可调谐光源和所述设备的方法。控制外部谐振器型可调光源的波长的方法是外部谐振腔型可调光源示出了根据加热器功率给一个变量可用波长范围内的波长变化的波长调谐曲线 通过进行执行第一校准，以及用于获得波长可变范围尽可能的失谐执行第二校准曲线的步骤，并且可以包括：设置所述波长的步骤中获得的波长锁定。
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公开(公告)号：KR1020160150247A
公开(公告)日：2016-12-29
申请号：KR1020150087754
申请日：2015-06-19
Applicant: 한국전자통신연구원
Abstract: 본발명은파장가변레이저장치에관한것으로, 상기장치는기판상에형성되며, 능동광 도파로, 전단수동광 도파로및 후단수동광 도파로를포함하는광 도파로층; 상기광 도파로층 상부에위치하는클래드층; 및상기클래드층 상부에위치하며, 외부로부터인가되는전력을공급받아열을발생하여상기클래드층을통해상기전단및 후단수동광 도파로로공급하는파장가변층을포함한다.
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公开(公告)号：KR1020160020013A
公开(公告)日：2016-02-23
申请号：KR1020140104382
申请日：2014-08-12
Applicant: 한국전자통신연구원
Inventor： 최병석
IPC: H04B10/572 , H04J14/02 , H04B10/50
CPC classification number: H01S5/141 , H01S3/10053 , H01S3/106 , H01S5/0612 , H01S5/0617 , H04B10/572 , H04B10/503 , H04J14/02
Abstract: 파장가변광원구현방법및 장치가개시되어있다.외부공진기형파장가변광원의파장을제어하는방법은히터파워에따른파장변화를나타내는파장가변곡선을상기외부공진기형파장가변광원이가변가능한파장범위까지획득하는 1차캘리브레이션을수행하는단계, 상기가변가능한파장범위의디튜닝곡선을획득하는 2차캘리브레이션을수행하는단계및 파장잠금을수행하여파장을설정하는단계를포함할수 있다.
Abstract translation: 公开了一种实现波长可调光源的方法及其装置。 一种用于控制用于外部谐振器的波长可调光源的波长的方法包括以下步骤：执行第一校准，以获得表示根据加热器功率的波长变化的波长可调曲线，直到波长 外部谐振器的可调光源是可调谐的; 执行获得可调波长范围的失谐曲线的第二校准; 并通过执行波长锁定来设置波长。
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