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公开(公告)号：KR1020110017545A
公开(公告)日：2011-02-22
申请号：KR1020090075062
申请日：2009-08-14
Applicant: 한국전자통신연구원
IPC: G02B6/124
CPC classification number: G02B6/124
Abstract: PURPOSE: An optical coupler is provided to include an upper cladding layer with a pre-set thickness based on the wavelength of an optical signal and the refractive index of the coupler. CONSTITUTION: A lower cladding layer(110) is placed on a substrate(100). A core layer(120) including an optical waveguide and a diffraction grating coupler is placed on the lower cladding layer. A first upper cladding layer(130) is placed on the core layer. The first upper cladding layer includes a thickness which is one quarter a value that the wavelength of an optical signal is divided by the refractive index of the first upper cladding layer.
Abstract translation: 目的：提供光耦合器以包括基于光信号的波长和耦合器的折射率的预设厚度的上包层。 构成：将下包层（110）放置在基底（100）上。 将包括光波导和衍射光栅耦合器的芯层（120）放置在下包层上。 第一上包层（130）被放置在芯层上。 第一上包层的厚度是光信号的波长除以第一上包层的折射率的四分之一的值。
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公开(公告)号：KR1020080053094A
公开(公告)日：2008-06-12
申请号：KR1020060125065
申请日：2006-12-08
Applicant: 한국전자통신연구원
IPC: H01S5/00
CPC classification number: H01S5/34 , B82Y20/00 , H01S5/3407 , H01S5/3416 , H01S5/3419 , H01S5/3422 , H01S5/34306
Abstract: An interband tunneling intersubband transition semiconductor laser is provided to acquire a high output power with a low cost by having a simple structure having a little number of stacking. An interband tunneling intersubband transition semiconductor laser includes a first cladding layer(150a), an active region structure layer(110), a second cladding layer(150b), and electrodes(130a,130b). The active region structure layer is formed by repeatedly stacking a quantum well layer and a quantum wall layer. The quantum well layer and the quantum wall layer are a heterostructure having a broken bandgap energy, and implement an interband tunneling. The electrodes are formed on a lower part of a semiconductor substrate and an upper part of the cladding layer. When an electric power is applied to the electrodes, an interband resonant tunneling and a subband transition of a carrier in the active region structure layer are consecutively generated.
Abstract translation: 提供了一种带间隧穿带间过渡半导体激光器，通过具有少量堆叠的简单结构，以低成本获得高输出功率。 带间隧穿带间过渡半导体激光器包括第一包层（150a），有源区结构层（110），第二覆层（150b）和电极（130a，130b）。 有源区结构层通过重复堆叠量子阱层和量子壁层而形成。 量子阱层和量子壁层是具有断带能量断裂的异质结构，并实现了带间隧穿。 电极形成在半导体衬底的下部和包覆层的上部。 当对电极施加电力时，连续地产生有源区结构层中的载流子的带间谐振隧穿和子带转变。
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公开(公告)号：KR1020100070022A
公开(公告)日：2010-06-25
申请号：KR1020080128611
申请日：2008-12-17
Applicant: 한국전자통신연구원
CPC classification number: G02B6/12011
Abstract: PURPOSE: An optical device chip is provided to improve the crosstalk properties of an arrayed waveguide grafting structure by reducing phase errors that result from changes in the width of an arrayed waveguide. CONSTITUTION: Arrayed waveguide grafting structures(AWG1,AWG2) each comprises an input star coupler, an output star coupler, and a plurality of arrayed waveguides. A plurality of arrayed waveguides optically interlinks the input star coupler and the output star coupler. Each arrayed waveguide includes at least one first phase and at least two second phases. The first phase has a confinement factor. The second phase has a low confinement factor. The first phases of the plurality of arrayed waveguides have the same structure.
Abstract translation: 目的：提供一种光学器件芯片，用于通过减少由阵列波导的宽度变化引起的相位误差来改善阵列波导接枝结构的串扰特性。 构成：阵列波导接枝结构（AWG1，AWG2）各自包括输入星形耦合器，输出星形耦合器和多个阵列波导。 多个阵列波导将输入星形耦合器和输出星形耦合器光学地相互连接。 每个阵列波导包括至少一个第一相和至少两个第二相。 第一阶段有约束因素。 第二阶段具有低限制因素。 多个阵列波导的第一相具有相同的结构。
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公开(公告)号：KR1020090106262A
公开(公告)日：2009-10-08
申请号：KR1020080031847
申请日：2008-04-04
Applicant: 한국전자통신연구원
CPC classification number: G02B6/12011 , G02B2006/12119
Abstract: PURPOSE: A waveguide structure and an arrayed waveguide grating structure are provided to improve a crosstalk characteristic by reducing a phase error of an arrayed waveguide and the coupling loss between the arrayed waveguide and a star coupler. CONSTITUTION: A plurality of arrayed waveguides(103) connect an input start coupler(102) and an outer star coupler(104) optically. The arrayed waveguides includes a first section with a high confinement factor and a second section with a low confinement factor. The first section of the arrayed waveguide has the same structure.
Abstract translation: 目的：提供波导结构和阵列波导光栅结构，以通过减少阵列波导的相位误差和阵列波导与星形耦合器之间的耦合损耗来改善串扰特性。 构成：多个阵列波导（103）以光学方式连接输入起始耦合器（102）和外部星形耦合器（104）。 阵列波导包括具有高限制因子的第一部分和具有低约束因子的第二部分。 阵列波导的第一部分具有相同的结构。
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公开(公告)号：KR1020090061293A
公开(公告)日：2009-06-16
申请号：KR1020070128259
申请日：2007-12-11
Applicant: 한국전자통신연구원
IPC: G02B6/10
Abstract: An optical guide structure and a manufacturing method thereof are provided, which forms a wave guide having the end of very small radius of curvature while having the tapered shape. An optical guide structure comprises the substrate(110), the high refractivity core(135), and the low-refractive-index pattern(140). The substrate comprises the first waveguide domain, and the second waveguide domain, and transition areas. The high refractivity core is extended to the transition domain from the first waveguide domain. The high refractivity core is covered by the low refractivity core pattern. The other side wall of the high refractivity core forms acute angle with one side wall of the low refractivity core pattern.
Abstract translation: 提供了一种导光结构及其制造方法，其形成具有非常小的曲率半径的端部的波导，同时具有锥形形状。 光导结构包括基板（110），高折射率芯（135）和低折射率图案（140）。 衬底包括第一波导域和第二波导域，以及过渡区域。 高折射率核心从第一波导域延伸到过渡域。 高折射率芯由低折射率芯图案覆盖。 高折射率芯的另一侧壁与低折射率芯图案的一个侧壁形成锐角。
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Patent Agency Ranking
公开(公告)号：KR100842288B1
公开(公告)日：2008-06-30
申请号：KR1020060125065
申请日：2006-12-08
Applicant: 한국전자통신연구원
IPC: H01S5/00
CPC classification number: H01S5/34 , B82Y20/00 , H01S5/3407 , H01S5/3416 , H01S5/3419 , H01S5/3422 , H01S5/34306
Abstract: 본 발명은 부밴드 천이 반도체 레이저(intersubband transition laser)에 관한 것으로서, 더욱 구체적으로는 반도체 기판; 반도체 기판 상에 형성된 제 1 클래딩층, 활성영역 구조층 및 제 2 클래딩층을 포함하며, 활성영역 구조층이 반도체 브로큰 에너지 밴드갭(broken energy bandgap)을 가지는 양자우물층 및 양자장벽층들이 다수 반복 적층된 구조로 이루어져 활성영역 구조층 내에서 캐리어(carrier)들의 부밴드간 방사 천이 (intersubband radiative transition) 및 인터밴드 공진터널링(interband tunneling) 현상이 연속적이며, 반복적으로 일어 나는 cascade 모드로 작동하는 것을 특징으로 하는 인터밴드 공진터널링 부밴드 천이 반도체 레이저에 관한 것으로, 단순하고 컴팩트한 구조에서 고출력이 가능한 레이저 구조이다.
반도체 레이저, 부밴드 천이, 인터밴드 공진 터널링, 브로큰 밴드갭, 활성 영역-
公开(公告)号：KR1020080050933A
公开(公告)日：2008-06-10
申请号：KR1020070030355
申请日：2007-03-28
Applicant: 한국전자통신연구원
Abstract: A wavelength multiplexing/demultiplexing optical filter module and a manufacturing method of the same are provided to remove effectively optical coupling loss without forming an additional waveguide. An input-side star coupler of a slap waveguide type is connected to an input waveguide. An arrayed waveguide includes a plurality of individual waveguides having heterogeneous waveguide sections. In the heterogeneous waveguide sections, refractive indexes of waveguide cores are different from each other. The heterogeneous waveguide sections have a length difference therebetween. An output-side star coupler of a slap waveguide type is connected to the arrayed waveguide. One or more output waveguides are connected to the output-side star coupler. The heterogeneous waveguide sections includes a clad of a core(404) having a small refractive index and a clad of a core(403) having a large refractive index.
Abstract translation: 提供了一种波长复用/解复用光学滤波器模块及其制造方法，以有效地去除光耦合损耗而不形成另外的波导。 波导型输入侧星形耦合器连接到输入波导。 阵列波导包括具有异质波导段的多个独立波导。 在异质波导部分中，波导芯的折射率彼此不同。 异质波导部分之间具有长度差。 带状波导型的输出侧星形耦合器连接到阵列波导。 一个或多个输出波导连接到输出侧星形耦合器。 异质波导部分包括具有小折射率的芯（404）的包层和具有大折射率的芯（403）的包层。
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公开(公告)号：KR1020100072696A
公开(公告)日：2010-07-01
申请号：KR1020080131183
申请日：2008-12-22
Applicant: 한국전자통신연구원
Abstract: PURPOSE: An optical coupling device according is provided to enhance the degree of integration by vertical optical coupling between light waveguides. CONSTITUTION: A first optical waveguide(310) comprises a first IO(Input Output) lattice coupler and a first interlayer lattice coupler which is distant from the first IO lattice coupler. The first optical waveguide is arranged on a first plane on a substrate(100). A second optical waveguide(210) is opposed to the first interlayer lattice coupler. The second optical waveguide comprises a second IO lattice coupler which optically couples with the first interlayer lattice coupler.
Abstract translation: 目的：提供一种光耦合装置，以通过光波导之间的垂直光耦合来增强集成度。 构成：第一光波导（310）包括第一IO（输入输出）晶格耦合器和远离第一IO晶格耦合器的第一层间晶格耦合器。 第一光波导布置在基板（100）上的第一平面上。 第二光波导（210）与第一层间晶格耦合器相对。 第二光波导包括与第一层间晶格耦合器光耦合的第二IO点阵耦合器。
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公开(公告)号：KR1020100067347A
公开(公告)日：2010-06-21
申请号：KR1020080125871
申请日：2008-12-11
Applicant: 한국전자통신연구원
IPC: G02B6/12
CPC classification number: G02B6/1228 , G02B6/12004 , G02B6/124 , G02B6/34
Abstract: PURPOSE: An optical device is provided to maximize coupling efficiency by selectively extracting wavelength or part of light from a first optical waveguide through a lateral lattice on the side of the optical waveguide. CONSTITUTION: A first cladding is arranged on a substrate. A first optical waveguide(120) has a first dielectric constant extended on the first cladding in a first direction. A lateral lattice(130) is formed on one side of the first optical waveguide. A second optical waveguide(140) fills the space of the lateral lattice on the first cladding and is extended in a second direction cross the first direction. A second cladding is arranged on the second optical waveguide and has a third dielectric constant. The first dielectric constant is larger than the second dielectric constant. The second dielectric constant is larger than the third dielectric constant.
Abstract translation: 目的：提供一种光学装置，通过选择性地从光波导侧的横向晶格选择性地提取来自第一光波导的波长或部分光以使耦合效率最大化。 构成：第一包层布置在基底上。 第一光波导（120）具有在第一方向上在第一包层上延伸的第一介电常数。 横向晶格（130）形成在第一光波导的一侧。 第二光波导（140）填充第一包层上的横向晶格的空间，并且沿与第一方向交叉的第二方向延伸。 第二包层布置在第二光波导上并具有第三介电常数。 第一介电常数大于第二介电常数。 第二介电常数大于第三介电常数。
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