Abstract:
PURPOSE: A large area gas sensor and a manufacturing method thereof are provided to reduce the manufacturing costs of a substrate by using a plastic substrate instead of a high priced aluminum substrate. CONSTITUTION: A large area gas sensor comprises: a flexible substrate(200); a double damping layer(210) which is formed on the flexible substrate; a metal electrode(220) which comprises a probe part which is patterned on the double damping layer; and an oxide detection layer(230) which is formed on the metal electrode in which the probe part is excluded. The flexible substrate comprises polyimide, polyethylene, polyethersulfone and polycarbonate. The double damping layer comprises an amorphous silicon layer(211) and an inorganic insulation film layer(212) which are successively formed on the flexible substrate. The inorganic insulation film layer consists of one or more among a group of Al2O3, MgO, SrTiO, and SiO2.
Abstract:
A gas storage medium is provided to improve efficiency of gas storage capability by sufficiently securing a surface area for gas storage, a gas storage apparatus having the gas storage medium is provided, and a gas storage method using the gas storage apparatus is provided. A gas storage medium is characterized in that materials with variable ionic values are spaced from one another to form a multilayered structure, and the materials comprise excess electrons that do not participate in chemical bond. A gas storage apparatus comprises: a chamber(104); a gas storage medium(101) in which materials with variable ionic values are spaced from one another to form a multilayered structure, and the materials comprise excess electrons that do not participate in chemical bond; a heating member(105) for heating the gas storage medium; and a cooling member(106) for cooling the gas storage medium. The chamber has an inlet(104A) installed therein to flow a material to be stored into the gas storage medium, and an outlet(104B) formed therein to discharge the material to be stored from the gas storage medium. The gas storage apparatus further comprises a supporting member(103) for supporting the materials with variable ionic values.
Abstract:
An apparatus and a method for detecting fall-down, and a system and a method for emergency aid using the same are provided to allow elderly persons to enjoy their safe life irrespective of a place and a time by using a portable terminal. An apparatus for detecting fall-down includes a storing unit, an angular velocity measuring unit, an acceleration measuring unit, an acceleration extracting unit(15), and a fall-down determining unit(16). The storing unit stores fall-down data vectors. The angular velocity measuring unit measures an angular velocity value. The acceleration measuring unit measures an acceleration value. The acceleration extracting unit extracts a kinetic acceleration value and a gravitational acceleration value by filtering the acceleration value measured by the acceleration measuring unit. The fall-down determining unit converts the angular velocity value which is measured by the angular velocity measuring unit, and the kinetic acceleration value and the gravitational acceleration value which are extracted by the acceleration extracting unit, into a fall-down data vector, and determines a user's fall-down by comparing the converted fall-down data vector with the fall-down data vector stored in the storing unit.
Abstract:
본 발명은 유기 전계효과 트랜지스터의 제조방법에 관한 것으로, 보다 상세하게는 기판 상에 게이트 전극, 유전층, 소오스/드레인 전극 및 유기 반도체가 포함된 유기 전계효과 트랜지스터 패턴을 형성하는 단계와, 상기 소오스/드레인 전극 및 상기 유기 반도체의 전체 상부면에 소정의 접착제가 형성된 접합층을 부착시킨 후 상기 기판에서 상기 유기 전계효과 트랜지스터 패턴을 분리시키는 단계와, 분리된 상기 유기 전계효과 트랜지스터 패턴을 미리 마련된 플라스틱 기판 상에 전사시키는 단계를 포함함으로써, 온도에 영향을 받지 않고 증착할 수 있으므로 유전층의 종류에 제약을 받지 않을 뿐만 아니라 전사시키는 방법 중에서도 그 공정 자체가 매우 간단하며, 전사방법 자체가 외부 공기나 수분으로부터 유기물을 보호하는 보호층 역할까지 하여 그 특성을 오래 유지시킬 수 있는 효과가 있다. 유기 전계효과 트랜지스터(OFET), 전사효과, 소오스 전극, 드레인 전극, 유전층, 기판, 테이프
Abstract:
본 발명은 도전성 유기박막 소자의 제작 방법에 관한 것으로, 희생층을 이용하여 하부전극 상부에 에어브리지형의 상부전극을 형성한 후 희생층을 제거하여 상부전극과 하부전극이 교차하는 부분에 수 나노 메터 두께의 나노 갭을 형성한다. 나노 갭의 상부전극과 하부전극 사이에 도전성 유기분자를 균일하게 흡착시키되, 도전성 유기분자가 흡착되는 동안 상부전극과 하부전극을 통해 흐르는 전류를 관찰하여 도전성 유기분자의 흡착 정도를 확인한다. 따라서 제작 공정의 재현성이 향상되어 표준화된 공정의 채택으로 대량 생산이 용이해진다. 도전성 유기분자, 희생층, 나노 갭, 흡착, 에어브리지형, 상부전극
Abstract:
접착식 유기-무기 복합막을 갖춘 엔캡슐레이션 박막과 이를 포함하는 유기 전기발광 소자에 관하여 개시한다. 본 발명에 따른 유기 전기발광 소자 보호용 엔캡슐레이션 박막은 유기물 및 무기물로 이루어지는 유기-무기 복합막과, 상기 유기-무기 복합막에 부착되어 있는 접착 시트를 포함한다. 본 발명에 따른 유기 전기발광 소자를 제조하기 위하여, 먼저 기판상에 양극, 유기 발광층 및 음극이 차례로 적층된 적층 구조를 형성한다. 접착 시트를 이용하여 상기 적층 구조상에 유기물 및 무기물로 이루어지는 유기-무기 복합막을 부착시킨다. 상기 유기-무기 복합막은 Al, 주석, 아연, 또는 이들 중에서 선택되는 적어도 하나를 기본으로 하는 합금막으로 이루어지는 적어도 1개의 무기막과, 적어도 1개의 고분자막이 접착층에 의하여 부착된 상태로 적층되어 있는 다층막으로 이루어질 수 있다.
Abstract:
PURPOSE: A vertical structure semiconductor TFT(Thin Film Transistor) is provided to be capable of maximizing the surface area for flowing current and improving the driving speed of a device. CONSTITUTION: A vertical structure semiconductor TFT is completed by sequentially depositing the first electrode(220), a dielectric thin film(230), the second electrode(240), an organic semiconductor thin film(260), and the third electrode(250) on a substrate(210). At this time, predetermined current vertically flows between the second and third electrode. The predetermined current is controlled by the electric field generated from the first electrode, wherein the electric field parallels the predetermined current. Preferably, the substrate is one selected from a group consisting of a silicon mono-crystal, glass, or plastic substrate.
Abstract:
PURPOSE: An electric light emitting device having an encapsulation layer is provided to be capable of effectively preventing moisture or oxygen from penetrating into an electric LED(Light Emitting Diode) for prolonging the lifetime of the electric light emitting device. CONSTITUTION: An electric light emitting device is provided with a substrate(101), an electric LED(102) formed at the upper portion of the substrate, and encapsulation layer(104) formed at the upper portion of the resultant structure for preventing the penetration of moisture and oxygen. The electric light emitting device further includes a double-sided adhesive film(103) located between the LED and the encapsulation layer for attaching the encapsulation layer to the substrate.
Abstract:
PURPOSE: A spirobifluorene compound, an electro luminescence polymer, and an electro luminescence device containing the same are provided, thereby producing the high quality electro luminescence polymer. CONSTITUTION: The spirobifluorene compound is represented by the formula, wherein R1 and R2 are the same or different each other, and independently linear or branched C1-C22 alkyl or aryl substituted with C1-C22 alkyl, in which at least one of R1 and R2 is selected from the group consisting of O, N, S, Si and Ge; and X is halogen, boron or boron ester. The electro luminescence device comprises a glass board(10), a transparent electrode(12), a buffer layer(14), a luminescence polymer layer(16), an insulating layer(18) and a metal electrode layer(20).
Abstract:
PURPOSE: A method of patterning an indium tin oxide layer on a plastic thin film and a rotary coater used for the method are provided to coat photoresist in uniform thickness and prevent undercut generated in the event of wet etching. CONSTITUTION: An ITO layer(11) is formed on a plastic substrate(10), and photoresist is coated on the ITO layer. Heat treatment is performed in order to remove a solvent contained in the coated photoresist. Ultraviolet rays are irradiated on a portion of the ITO layer, which is etched, using a patterned mask. The exposed portion of the photoresist is developed. Heat treatment is carried out to eliminate moisture and solvent left in the photoresist. The ITO layer is dipped in an ITO etchant using the patterned photoresist as a mask to wet-etch the ITO layer. The photoresist used as the mask is stripped.