公开(公告)号：WO2017198422A1

公开(公告)日：2017-11-23

申请号：PCT/EP2017/059642

申请日：2017-04-24

Applicant: ASML NETHERLANDS B.V.

Inventor： GARCIA GRANDA, Miguel ,  LEEWIS, Christian, Marinus ,  STAALS, Frank

IPC: G03F9/00 ,  G03F7/20

Abstract: A method including obtaining a measurement result from a target on a substrate, by using a substrate measurement recipe; determining, by a hardware computer system, a parameter from the measurement result, wherein the parameter characterizes dependence of the measurement result on an optical path length of the target for incident radiation used in the substrate measurement recipe and the determining the parameter comprises determining dependence of the measurement result on a relative change of wavelength of the incident radiation; and if the parameter is not within a specified range, adjusting the substrate measurement recipe.

Abstract translation: 一种方法，包括：通过使用衬底测量配方从衬底上的目标获得测量结果; 由硬件计算机系统从所述测量结果确定参数，其中所述参数表征所述测量结果对用于所述衬底测量配方中的入射辐射的所述目标的光路长度的依赖性，并且确定所述参数包括确定 关于入射辐射的波长的相对变化的测量结果; 如果参数不在指定范围内，请调整基材测量配方。

公开(公告)号：WO2017144379A1

公开(公告)日：2017-08-31

申请号：PCT/EP2017/053700

申请日：2017-02-17

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  STAALS, Frank ,  MASLOW, Mark, John ,  ANUNCIADO, Roy ,  JOCHEMSEN, Marinus ,  CRAMER, Hugo, Augustinus, Joseph ,  THEEUWES, Thomas ,  HINNEN, Paul, Christiaan

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/705 ,  G03F7/70625

Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.

Abstract translation: 一种方法，包括：通过组合所述衬底上的所述第一变量的指纹和所述衬底的特定值来计算由图案化过程处理的衬底的图案的第一变量的值 第一个变量; 以及至少部分地基于所计算的第一变量的值来确定图案的第二变量的值。

公开(公告)号：WO2017016839A1

公开(公告)日：2017-02-02

申请号：PCT/EP2016/066110

申请日：2016-07-07

Applicant: ASML NETHERLANDS B.V.

Inventor： STAALS, Frank ,  LUIJTEN, Carlo, Cornelis, Maria ,  HINNEN, Paul, Christiaan ,  VAN OOSTEN, Anton, Bernhard

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G01B11/02 ,  G01B11/272 ,  G01B2210/56 ,  G03F7/70625 ,  G03F7/70641

Abstract: Disclosed is a method of monitoring a lithographic process parameter, such as focus and/or dose, of a lithographic process. The method comprises acquiring a first and a second target measurement using respectively a first measurement configuration and a second measurement configuration, and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement. The first metric may be difference. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.

Abstract translation: 公开了一种监测光刻工艺参数的方法，例如光刻工艺的焦点和/或剂量。 该方法包括分别采用第一测量配置和第二测量配置获取第一和第二目标测量，以及根据从所述第一目标测量和所述第二目标测量导出的第一度量来确定光刻处理参数。 第一个度量可能是不同的。 还公开了相应的测量和光刻设备，计算机程序和制造设备的方法。

公开(公告)号：WO2021058268A1

公开(公告)日：2021-04-01

申请号：PCT/EP2020/074900

申请日：2020-09-07

Applicant: ASML NETHERLANDS B.V.

Inventor： STAALS, Frank

IPC: G03F7/20

Abstract: Disclosed is a method of inferring a value for a first processing parameter of a lithographic process, the first processing parameter being subject to a coupled dependency of a second processing parameter. The method comprises determining a first metric and a second metric from measurement data, each of the first metric and second metric being dependent on both the first processing parameter and second processing parameter The first metric shows a stronger dependence to the first processing parameter than the second processing parameter and the second metric shows a stronger dependence to the second processing parameter than the first processing parameter. The value for the first processing parameter is inferred from said first metric and second metric.

公开(公告)号：WO2020141040A1

公开(公告)日：2020-07-09

申请号：PCT/EP2019/083865

申请日：2019-12-05

Applicant: ASML NETHERLANDS B.V.

Inventor： HENNERKES, Christoph, Rene, Konrad, Cebulla ,  STAALS, Frank

IPC: G03F7/20

Abstract: Disclosed is a method for selecting a structure for focus monitoring. The method comprises: simulating a Bossung response with focus of a focus dependent parameter, for one or more different structures; and selecting a structure for focus monitoring in a manufacturing process based on the results of said simulating step. The simulating step may be performed using a computational lithography simulation.

公开(公告)号：WO2019185230A1

公开(公告)日：2019-10-03

申请号：PCT/EP2019/053376

申请日：2019-02-12

Applicant: ASML NETHERLANDS B.V.

Inventor： ALTINI, Valerio ,  STAALS, Frank

IPC: G03F7/20 ,  G03F9/00

Abstract: Disclosed is a method for controlling a scanning exposure apparatus configured for scanning an illumination profile over a substrate to form functional areas thereon. The method comprises determining a control profile for dynamic control of the illumination profile during exposure of an exposure field comprising the functional areas, in a scanning exposure operation; and optimizing a quality of exposure of individual functional areas. The optimizing may comprise a) extending the control profile beyond the extent of the exposure field in the scanning direction; and/or b) applying a deconvolution scheme to the control profile, wherein the structure of the deconvolution scheme is based on a dimension of the illumination profile in the scanning direction.

公开(公告)号：WO2019110211A1

公开(公告)日：2019-06-13

申请号：PCT/EP2018/079968

申请日：2018-11-02

Applicant: ASML NETHERLANDS B.V.

Inventor： STAALS, Frank ,  BROUWER, Eric, Jos, Anton ,  LUIJTEN, Carlo, Cornelis, Maria ,  VAESSEN, Jean-Pierre, Agnes, Henricus, Marie

IPC: G03F7/20

Abstract: A focus metrology target includes one or more periodic arrays of features (TH, TV, T). A measurement of focus performance of a lithographic apparatus is based at least in part on diffraction signals obtained from the focus metrology target. Each periodic array of features comprises a repeating arrangement of first zones interleaved with second zones, a feature density being different in the first zones and the second zones. Each first zone includes a repeating arrangement of first features (806, 906, 1106, 1108, 206, 1208, 1210, 1406, 1408, 1506, 1508, 1510). A minimum dimension of each first feature is close to but not less than a resolution limit of the printing by the lithographic apparatus, so as to comply with a design rule in a given a process environment. A region of high feature density may further include a repeating arrangement of larger features (1420, 1520).

公开(公告)号：WO2019029933A1

公开(公告)日：2019-02-14

申请号：PCT/EP2018/068786

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V.

Inventor： WARNAAR, Patrick ,  TINNEMANS, Patricius, Aloysius Jacobus ,  GRZELA, Grzegorz ,  MOS, Everhardus, Cornelis ,  TEL, Wim, Tjibbo ,  JOCHEMSEN, Marinus ,  SEGERS, Bart, Peter, Bert ,  STAALS, Frank

IPC: G03F7/20

Abstract: A method, includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distributions for use in design, control or modification of the patterning process.

公开(公告)号：WO2019001873A1

公开(公告)日：2019-01-03

申请号：PCT/EP2018/063959

申请日：2018-05-28

Applicant: ASML NETHERLANDS B.V.

Inventor： STAALS, Frank ,  VAN OOSTEN, Anton, Bernhard ,  YUDHISTIRA, Yasri ,  LUIJTEN, Carlo, Cornelis, Maria ,  VERSTRAETEN, Bert ,  GEMMINK, Jan-Willem

IPC: G03F7/20

Abstract: Focus metrology patterns and methods are disclosed which do not rely on sub-resolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features (422) interleaved with second features (424). A minimum dimension (w1) of each first feature is close to a printing resolution. A maximum dimension (w2) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w1') and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features (1122, 1124) arranged in pairs.

公开(公告)号：WO2016202559A1

公开(公告)日：2016-12-22

申请号：PCT/EP2016/062069

申请日：2016-05-27

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  STAALS, Frank ,  MASLOW, Mark, John

IPC: G03F7/20

CPC classification number: G03F7/70525 ,  G03F7/70891

Abstract: Disclosed herein is a computer-implemented method for adjusting a lithography process, processing parameters of the lithography process comprising a first group of processing parameters and a second group of processing parameters, the method comprising: obtaining a change of the second group of processing parameters; determining a change of a sub-PW as a result of the change of the second group of processing parameters, wherein the sub-PW is spanned by only the first group of processing parameters; adjusting the first group of processing parameters based on the change of the sub-PW.

Abstract translation: 本文公开了一种用于调整光刻工艺的计算机实现的方法，处理包括第一组处理参数和第二组处理参数的光刻工艺的参数，该方法包括：获得第二组处理参数的变化; 由于所述第二组处理参数的变化，确定所述子PW的改变，其中所述子PW仅由所述第一组处理参数跨越; 根据子PW的变化调整第一组处理参数。