公开(公告)号：WO2016000914A1

公开(公告)日：2016-01-07

申请号：PCT/EP2015/062778

申请日：2015-06-09

Applicant: ASML NETHERLANDS B.V.

Inventor： VERMA, Alok ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

CPC classification number: G03F7/70558 ,  G01N21/4738 ,  G01N21/4785 ,  G01N2021/4735 ,  G03F7/70625 ,  G03F7/70683 ,  G03F7/7085

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate, the method comprising the steps: (a) receiving a substrate comprising first and second structures produced using the lithographic process; (b) detecting scattered radiation while illuminating the first structure with radiation to obtain a first scatterometer signal; (c) detecting scattered radiation while illuminating the second structure with radiation to obtain a second scatterometer signal; (d) using the first and second scatterometer signals to determine an exposure dose value used to produce said first and second structures wherein the first structure has a first periodic characteristic with spatial characteristics and yet at least another second periodic characteristic with spatial characteristics designed to be affected by the exposure dose and the second structure has a first periodic characteristic with spatial characteristics and yet at least another second periodic characteristic with spatial characteristics designed to be affected by the exposure dose wherein the exposure dose affects the exposure dose affected spatial characteristics of the first and second structures in a different manner.

Abstract translation: 一种确定在光刻工艺中使用的光刻设备在衬底上的曝光剂量的方法，所述方法包括以下步骤：（a）接收包括使用光刻工艺制备的第一和第二结构的衬底; （b）在用辐射照射第一结构的同时检测散射的辐射以获得第一散射仪信号; （c）在用辐射照射第二结构的同时检测散射的辐射，以获得第二散射仪信号; （d）使用第一和第二散射仪信号来确定用于产生所述第一和第二结构的曝光剂量值，其中所述第一结构具有具有空间特性的第一周期特性，并且至少另外具有空间特性的另一第二周期特性被设计为 受曝光剂量的影响，第二结构具有空间特性的第一周期性特征，而至少具有设计为受曝光剂量影响的空间特征的另一第二周期特征，其中曝光剂量影响曝光剂量影响第一 和第二结构以不同的方式。

公开(公告)号：WO2023025506A1

公开(公告)日：2023-03-02

申请号：PCT/EP2022/071212

申请日：2022-07-28

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DONGEN, Jeroen ,  TSIATMAS, Anagnostis ,  VERMA, Alok ,  VAN DER MEIJDEN, Vidar ,  MC NAMARA, Elliott, Gerard

IPC: G03F7/20

Abstract: Disclosed is a method for determining a measurement recipe describing measurement settings for measuring a parameter of interest from a compound structure on a substrate. The method comprises obtaining first training data relating to measurements of reference targets, the targets comprising: a parameter of interest targets, each parameter of interest target having an induced set value which is varied over said parameter of interest targets; and one or more isolated feature targets, each comprising repetitions of one or more features. Second training data is obtained comprising compound structure measurement signals obtained from measurement of one or more instances of said compound structure, One or more machine learning models are trained using said first training data and second training data to infer a value for the parameter of interest from a measurement signal related to said compound structure corrected for a feature asymmetry contribution.

公开(公告)号：WO2021130315A1

公开(公告)日：2021-07-01

申请号：PCT/EP2020/087770

申请日：2020-12-23

Applicant: ASML NETHERLANDS B.V.

Inventor： KHEDEKAR, Satej, Subhash ,  VERMA, Alok ,  JONGEN, Martijn ,  BADR, Elie ,  VENSELAAR, Joannes, Jitse ,  ROELOFS, Willem, Seine, Christian ,  KARSSENBERG, Jaap, Goossen ,  SANGUINETTI, Gonzalo, Roberto ,  MICELI, Giacomo ,  CHEN, Kuan-Ming ,  RUTIGLIANI, Vito, Daniele ,  WANG, Shu-jin

IPC: G03F7/20 ,  G01N21/956 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633

Abstract: A target comprising an overlapping grating, wherein the top gratings are positioned in close proximity to an ending of the bottom lying grating.

公开(公告)号：WO2017149003A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054748

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.

Abstract translation: 一种确定图案化过程的重叠的方法，所述方法包括：获得由单位单元的一个或多个物理实例重新引导的辐射的检测到的表示，其中所述单位单元具有标称的几何对称性 并且其中通过用辐射束照射衬底获得辐射的检测到的表示，使得衬底上的束点用单元单元的一个或多个物理实例填充; 以及根据来自检测到的辐射表示的光学特征值确定单元细胞的第一覆盖图的值与也可从相同的光学特征值获得的单元细胞的第二覆盖图的确定，其中第一覆盖图位于 与第二覆盖层不同的方向或者单元细胞部分的不同组合之间的覆盖层比第二覆盖层

公开(公告)号：WO2017148982A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054714

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of determining overlay of a patterning process, the method including: illuminating a substrate with a radiation beam such that a beam spot on the substrate is filled with one or more physical instances of a unit cell, the unit cell having geometric symmetry at a nominal value of overlay; detecting primarily zeroth order radiation redirected by the one or more physical instances of the unit cell using a detector; and determining, by a hardware computer system, a non-nominal value of overlay of the unit cell from values of an optical characteristic of the detected radiation.

Abstract translation: 一种确定图案形成过程的重叠的方法，所述方法包括：用辐射束照射衬底，使得衬底上的束点用单元胞的一个或多个物理实例填充， 该单位晶格在重叠的标称值处具有几何对称性; 主要使用检测器检测由单位单元的一个或多个物理实例重新导向的零阶辐射; 以及由硬件计算机系统根据检测到的辐射的光学特性的值来确定单位单元的重叠的非标称值。

公开(公告)号：EP3451060A1

公开(公告)日：2019-03-06

申请号：EP17188175.8

申请日：2017-08-28

Applicant: ASML Netherlands B.V.

Inventor： VERMA, Alok ,  CRAMER, Hugo Augustinus Joseph ,  THEEUWES, Thomas ,  TSIATMAS, Anagnostis ,  VERSTRAETEN, Bert

IPC: G03F7/20

Abstract: A substrate comprising a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features, wherein the plurality of features comprise first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, and wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.

公开(公告)号：EP4194952A1

公开(公告)日：2023-06-14

申请号：EP21214132.9

申请日：2021-12-13

Applicant: ASML Netherlands B.V.

Inventor： VAN DONGEN, Jeroen ,  TSIATMAS, Anagnostis ,  VERMA, Alok ,  VAN DER MEIJDEN, Vidar ,  MC NAMARA, Elliott Gerard

IPC: G03F7/20

Abstract: Disclosed is a method for determining a measurement recipe describing measurement settings for measuring a parameter of interest from a compound structure on a substrate. The method comprises obtaining first training data relating to measurements of reference targets, the targets comprising: a parameter of interest targets, each parameter of interest target having an induced set value which is varied over said parameter of interest targets; and one or more isolated feature targets, each comprising repetitions of one or more features. Second training data is obtained comprising compound structure measurement signals obtained from measurement of one or more instances of said compound structure, One or more machine learning models are trained using said first training data and second training data to infer a value for the parameter of interest from a measurement signal related to said compound structure corrected for a feature asymmetry contribution.

公开(公告)号：EP4030236A1

公开(公告)日：2022-07-20

申请号：EP21152071.3

申请日：2021-01-18

Applicant: ASML Netherlands B.V.

Inventor： VAN LAARHOVEN, Hendrik Adriaan ,  VERMA, Alok ,  ANUNCIADO, Roy ,  DILLEN, Hermanus Adrianus ,  VAN DER SANDEN, Stefan Cornelis Theodorus

IPC: G03F7/20 ,  H01L21/66

Abstract: Disclosed is a method of monitoring a semiconductor manufacturing process. The method comprises obtaining at least one first trained model being operable to derive local performance parameter data from high resolution metrology data, wherein said local performance parameter data describes a local component, or one or more local contributors thereto, of a performance metric and high resolution metrology data relating to at least one substrate having been subject to at least a part of said semiconductor manufacturing process. Local performance parameter data is determined from said high resolution metrology data using said first trained model. The first trained model is operable to determine said local performance parameter data as if it had been subject to an etch step on at least the immediately prior exposed layer, based on said high resolution metrology data comprising only metrology data performed prior to any such etch step.

公开(公告)号：EP3321738A1

公开(公告)日：2018-05-16

申请号：EP16198272.3

申请日：2016-11-10

Applicant: ASML Netherlands B.V.

Inventor： TSIATMAS, Anagnostis ,  VERMA, Alok ,  VERSTRAETEN, Bert

IPC: G03F7/20

CPC classification number: G03F7/70466 ,  G03F7/70633

Abstract: A method of measuring a parameter of a device manufacturing process is disclosed. The method comprises measuring a target on a substrate by illuminating the target with measurement radiation and using an optical apparatus to detect the measurement radiation scattered by the target. The target comprises a target structure having a first periodic component and a second periodic component. The optical apparatus receives radiation resulting from diffraction of the measurement radiation from the target structure. The received radiation comprises at least one diffraction order that would not be received from diffraction of the measurement radiation from the first periodic component alone nor from diffraction of the measurement radiation from the second periodic component alone.

Abstract translation: 公开了一种测量器件制造工艺的参数的方法。 该方法包括通过用测量辐射照射目标并使用光学设备来检测由目标散射的测量辐射来测量衬底上的目标。 目标包括具有第一周期性分量和第二周期性分量的目标结构。 该光学设备接收来自目标结构的测量辐射的衍射所产生的辐射。 所接收的辐射包括将不从仅来自第一周期性成分的测量辐射的衍射接收到的至少一个衍射级，或者来自仅来自第二周期性成分的测量辐射的衍射。

公开(公告)号：EP4392829A1

公开(公告)日：2024-07-03

申请号：EP22765013.2

申请日：2022-07-28

Applicant: ASML Netherlands B.V.

Inventor： VAN DONGEN, Jeroen ,  TSIATMAS, Anagnostis ,  VERMA, Alok ,  VAN DER MEIJDEN, Vidar ,  MC NAMARA, Elliott, Gerard

IPC: G03F7/20

CPC classification number: G03F7/70633