公开(公告)号：WO2021122879A1

公开(公告)日：2021-06-24

申请号：PCT/EP2020/086618

申请日：2020-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  VAN LEEST, Adriaan, Johan

IPC: G03F7/20 ,  G03F7/70616 ,  G03F7/70633

Abstract: Disclosed is a method for determining a measurement recipe describing measurement settings for measuring a parameter of interest from a substrate subject to an etch induced parameter error, said etch induced parameter error affecting measurement of the parameter of interest in a recipe dependent manner. The method comprises obtaining parameter of interest set-up data relating to measurements of at least one set-up substrate on which the parameter of interest has various first induced set values and etch induced parameter set-up data relating to measurements of at least one set-up substrate on which the etch induced parameter has various second induced set values. The recipe is determined so as to minimize the effect of the etch induced parameter on measurement of the parameter of interest.

公开(公告)号：WO2017032736A1

公开(公告)日：2017-03-02

申请号：PCT/EP2016/069790

申请日：2016-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN DER SCHAAR, Maurits ,  ZHANG, Youping ,  SMILDE, Hendrik, Jan, Hidde ,  TSIATMAS, Anagnostis ,  VAN LEEST, Adriaan, Johan ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph ,  HINNEN, Paul, Christiaan

IPC: G03F7/20

CPC classification number: G03F7/70491 ,  G01N21/47 ,  G01N21/9501 ,  G03F7/70633 ,  G03F7/70683

Abstract: A substrate has first and second target structures formed thereon by a lithographic process, lithographic process comprising at least two lithographic steps. Each target structure has two-dimensional periodic structure formed in a single material layer, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount. An angle- resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.

Abstract translation: 基板通过光刻工艺在其上形成第一和第二目标结构，光刻工艺包括至少两个光刻步骤。 每个目标结构具有形成在单个材料层中的二维周期性结构，其中在第一目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻步骤中限定的特征偏移第一偏置量， 在第二目标结构中，在第二光刻步骤中限定的特征相对于在第一光刻步骤中限定的特征偏移第二偏置量。 获得第一目标结构的角度分辨散射光谱和第二目标结构的角度分辨散射光谱，并且从使用在第二目标结构的散射光谱中发现的不对称性的测量值导出光刻处理参数的测量 第一和第二目标结构。

公开(公告)号：WO2017055075A1

公开(公告)日：2017-04-06

申请号：PCT/EP2016/071542

申请日：2016-09-13

Applicant: ASML NETHERLANDS B.V.

Inventor： VERMA, Alok ,  KHO, Sinatra, Canggih ,  VAN LEEST, Adriaan, Johan

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70625 ,  G03F7/705 ,  G03F7/70633 ,  G03F9/7092

Abstract: This disclosure includes a variety of methods of describing a shape in a hierarchical manner, and uses of such a hierarchical description. In particular, this disclosure includes a method comprising: fitting one or more sub-shapes of a first order against a shape; determining an error of the fitting; and fitting one or more sub-shapes of a second order against the error.

Abstract translation: 本公开包括以分层方式描述形状的各种方法以及这种分层描述的使用。 特别地，本公开包括一种方法，包括：将一个或多个第一阶次的子形状对准一个形状; 确定装配的误差; 并且针对该错误拟合二次的一个或多个子形状。

公开(公告)号：WO2017149009A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054761

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph ,  DE LA FUENTE VALENTIN, Maria, Isabel ,  VAN WITTEVEEN, Koen ,  ZAAL, Martijn, Maria ,  WANG, Shu-jin

IPC: G03F7/20

Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.

Abstract translation: 度量目标包括：布置成通过第一图案化工艺形成的第一结构; 以及布置成通过第二图案化工艺形成的第二结构，其中第一结构和/或第二结构不用于创建器件图案的功能方面，并且其中第一和第二结构一起形成一个或多个 单位单元，所述单位单元在标称物理配置处具有几何对称性，并且其中所述单位单元具有如下特征：由于所述第一图案化工艺中的图案布置的相对偏移，在与所述标称物理配置不同的物理配置下， 第二次构图工艺和/或其他图案化工艺，单元格中的不对称性。

公开(公告)号：WO2016177548A1

公开(公告)日：2016-11-10

申请号：PCT/EP2016/058344

申请日：2016-04-15

Applicant: ASML NETHERLANDS B.V.

Inventor： MOSSAVAT, Seyed Iman ,  VAN LEEST, Adriaan, Johan

IPC: G03F7/20

CPC classification number: B29C67/0088 ,  B29C64/386 ,  B33Y50/02 ,  G03F7/705 ,  G03F7/70625 ,  G05B19/4099 ,  G05B2219/35134 ,  G05B2219/49007

Abstract: Disclosed are a method, computer program and associated apparatuses for metrology. The method includes acquiring inspection data comprising a plurality of inspection data elements, each inspection data element having been obtained by inspection of a corresponding target structure formed using a lithographic process; and performing an unsupervised cluster analysis on said inspection data, thereby partitioning said inspection data into a plurality of clusters in accordance with a metric. In an embodiment, a cluster representative can be identified for each cluster. The cluster representative may be reconstructed and the reconstruction used to approximate the other members of the cluster.

Abstract translation: 公开了一种计量方法，计算机程序和相关装置。 该方法包括获取包括多个检查数据元素的检查数据，每个检查数据元素是通过检查使用光刻处理形成的相应目标结构获得的; 以及对所述检查数据执行无监督的聚类分析，从而根据度量将所述检查数据划分成多个聚类。 在一个实施例中，可以为每个集群识别集群代表。 可以重建簇代表，并且重建用于近似群集的其他成员。

公开(公告)号：WO2017149003A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054748

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.

Abstract translation: 一种确定图案化过程的重叠的方法，所述方法包括：获得由单位单元的一个或多个物理实例重新引导的辐射的检测到的表示，其中所述单位单元具有标称的几何对称性 并且其中通过用辐射束照射衬底获得辐射的检测到的表示，使得衬底上的束点用单元单元的一个或多个物理实例填充; 以及根据来自检测到的辐射表示的光学特征值确定单元细胞的第一覆盖图的值与也可从相同的光学特征值获得的单元细胞的第二覆盖图的确定，其中第一覆盖图位于 与第二覆盖层不同的方向或者单元细胞部分的不同组合之间的覆盖层比第二覆盖层

公开(公告)号：WO2017148982A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054714

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of determining overlay of a patterning process, the method including: illuminating a substrate with a radiation beam such that a beam spot on the substrate is filled with one or more physical instances of a unit cell, the unit cell having geometric symmetry at a nominal value of overlay; detecting primarily zeroth order radiation redirected by the one or more physical instances of the unit cell using a detector; and determining, by a hardware computer system, a non-nominal value of overlay of the unit cell from values of an optical characteristic of the detected radiation.

Abstract translation: 一种确定图案形成过程的重叠的方法，所述方法包括：用辐射束照射衬底，使得衬底上的束点用单元胞的一个或多个物理实例填充， 该单位晶格在重叠的标称值处具有几何对称性; 主要使用检测器检测由单位单元的一个或多个物理实例重新导向的零阶辐射; 以及由硬件计算机系统根据检测到的辐射的光学特性的值来确定单位单元的重叠的非标称值。

公开(公告)号：WO2017148996A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054737

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.

Abstract translation: 一种配置参数确定过程的方法，所述方法包括：获得结构的数学模型，所述数学模型被配置为预测用辐射束照射所述结构时的光学响应，并且所述结构具有 在标称物理配置下的几何对称性; 由硬件计算机系统使用数学模型来模拟特定量的结构的物理配置中的扰动以确定多个像素中的每一个中的光学响应的​​对应变化以获得多个像素灵敏度; 并且基于像素灵敏度，确定用于与基板上的结构的测量像素光学特性值组合的多个权重，以产生与物理配置中的变化相关联的参数的值，每个权重对应于像素。 p>

公开(公告)号：WO2017148986A1

公开(公告)日：2017-09-08

申请号：PCT/EP2017/054719

申请日：2017-03-01

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN LEEST, Adriaan, Johan ,  TSIATMAS, Anagnostis ,  HINNEN, Paul, Christiaan ,  MC NAMARA, Elliott, Gerard ,  VERMA, Alok ,  THEEUWES, Thomas ,  CRAMER, Hugo, Augustinus, Joseph

IPC: G03F7/20

Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.

Abstract translation: 确定图案化过程的参数的方法，所述方法包括：获得在标称物理配置下由具有几何对称性的结构重新引导的辐射的检测到的表示，其中所检测到的辐射表示为 通过用辐射束照射衬底获得，使得衬底上的束斑填充有该结构; 以及由硬件计算机系统基于来自检测到的辐射表示的不对称光学特性分布部分中的光学特性值以比所检测到的辐射表示的另一部分更高的权重来确定图案化处理参数的值，所述不对称光学特性分布 由于结构的物理配置不同于名义物理配置。

公开(公告)号：EP4474908A1

公开(公告)日：2024-12-11

申请号：EP23177916.6

申请日：2023-06-07

Applicant: ASML Netherlands B.V.

Inventor： CALADO, Victor, Emanuel ,  VAN LEEST, Adriaan, Johan ,  THISSEN, Nick, Franciscus, Wilhelmus ,  MATHIJSSEN, Simon, Gijsbert, Josephus

IPC: G03F7/00

Abstract: Disclosed is a method of determining at least one exposure parameter such as focus and/or dose. The method comprises obtaining production metrology data for a plurality of structures; grouping said production metrology data into a plurality of neighbor groups, each neighbor group describing a different arrangement of said structures; obtaining pre-calibrated sensitivity relationship data for each of said plurality of neighbor groups or different combinations thereof, and inferring said at least one exposure parameter from the production metrology data and pre-calibrated sensitivity relationship data.