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    ETCH-ASSIST FEATURES
    14.
    发明申请
    ETCH-ASSIST FEATURES 审中-公开

    公开(公告)号：US20190018313A1

    公开(公告)日：2019-01-17

    申请号：US16067343

    申请日：2016-12-21

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Wim Tjibbo TEL ,  Thomas I. WALLOW

    IPC: G03F1/36 ,  G03F1/80 ,  G06F17/50 ,  H01L21/033 ,  H01L21/311

    Abstract: Provided is a process including: obtaining a layout specifying, at least in part, a pattern to be transferred to a substrate via a patterning process and an etch process; and modifying, with one or more processors, the layout to include an etch-assist feature that is larger than a resolution limit of the patterning process and smaller than a resolution limit of the etch process, the etch-assist feature being configured to reduce a bias of the patterning process or the etch process, to reduce an etch induced shift of a feature in the layout due to the etch process, or to expand a process window of another patterning process.

    METHOD FOR CALIBRATING A SCANNING CHARGED PARTICLE MICROSCOPE
    16.
    发明公开
    METHOD FOR CALIBRATING A SCANNING CHARGED PARTICLE MICROSCOPE 审中-公开

    公开(公告)号：US20230245851A1

    公开(公告)日：2023-08-03

    申请号：US18126322

    申请日：2023-03-24

    Applicant: ASML Netherlands B.V.

    Inventor： Hermanus Adrianus DILLEN ,  Wim Tjibbo TEL ,  Willem Louis VAN MIERLO

    IPC: H01J37/28 ,  H01J37/22

    CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J2237/2826

    Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

    METHOD TO CHARACTERIZE POST-PROCESSING DATA IN TERMS OF INDIVIDUAL CONTRIBUTIONS FROM PROCESSING STATIONS
    18.
    发明申请
    METHOD TO CHARACTERIZE POST-PROCESSING DATA IN TERMS OF INDIVIDUAL CONTRIBUTIONS FROM PROCESSING STATIONS 有权

    公开(公告)号：US20210389683A1

    公开(公告)日：2021-12-16

    申请号：US17283307

    申请日：2019-09-19

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Wim Tjibbo TEL ,  Ekaterina Mikhailovna VIATKINA ,  Tom VAN HEMERT

    IPC: G03F7/20 ,  G05B15/02

    Abstract: A method for characterizing post-processing data in terms of individual contributions from processing stations, the post-processing data relating to a manufacturing process for manufacturing integrated circuits on a plurality of substrates using a corresponding processing apparatus for each of a plurality of process steps, at least some of the processing apparatuses each including a plurality of the processing stations, and wherein the combination of processing stations used to process each substrate defines a process thread for the substrate; the method including: obtaining post-processing data associated with processing of the plurality of substrates in a cyclic sequence of processing threads; and determining an individual contribution of a particular processing station by comparing a subset of the post-processing data corresponding to substrates having shared process sub-threads, wherein a process sub-thread describes the process steps of each process thread other than the process step to which the particular processing station corresponds.

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