公开(公告)号：WO2012015474A1

公开(公告)日：2012-02-02

申请号：PCT/US2011/001323

申请日：2011-07-27

Applicant: AXCELIS TECHNOLOGIES INC. ,  SATOH, Shu

Inventor： SATOH, Shu

IPC: H01J37/317 ,  H01J37/304

CPC classification number: H01J37/3045 ,  H01J37/3171 ,  H01J2237/24535 ,  H01J2237/30455 ,  H01J2237/31703

Abstract: A glitch duration threshold is determined based on an allowable dose uniformity, a number of passes of a workpiece through an ion beam, a translation velocity, and a beam size. A beam dropout checking routine repeatedly measures beam current during implantation. A beam dropout counter is reset each time beam current is sufficient. On a first observation of beam dropout, a counter is incremented and a position of the workpiece is recorded. On each succeeding measurement, the counter is incremented if beam dropout continues, or reset if beam is sufficient. Thus, the counter indicates a length of each dropout in a unit associated with the measurement interval. The implant routine stops only when the counter exceeds the glitch duration threshold and a repair routine is performed, comprising recalculating the glitch duration threshold based on one fewer translations of the workpiece through the beam, and performing the implant routine starting at the stored position.

Abstract translation: 基于允许的剂量均匀性，通过离子束的工件的通过次数，平移速度和光束尺寸来确定毛刺持续时间阈值。 光束离子检测程序在植入期间重复测量束电流。 每次射束电流足够时，光束压差计数器都被复位。 在第一次观察光束偏移时，计数器递增，并记录工件的位置。 在每次后续的测量中，如果光束失效继续，计数器就会增加，如果光束足够，则重置。 因此，计数器指示与测量间隔相关联的单元中的每个压差的长度。 只有当计数器超过毛刺持续时间阈值并且执行修复例程时，植入程序才停止，包括基于通过束的工件的一个较少的平移重新计算毛刺持续时间阈值，以及从存储位置开始执行注入程序。

公开(公告)号：WO2011109115A1

公开(公告)日：2011-09-09

申请号：PCT/US2011/000427

申请日：2011-03-04

Applicant: AXCELIS TECHNOLOGIES INC. ,  SATOH, Shu

Inventor： SATOH, Shu

IPC: H01J37/317 ,  H01J37/244 ,  H01J37/147 ,  H01J37/304

CPC classification number: H01J37/3171 ,  H01J37/1472 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/30455 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: A method and apparatus is provided for improving implant uniformity of an ion beam experiencing pressure increase along the beam line. The method comprises generating a main scan waveform that moves an ion beam at a substantially constant velocity across a workpiece. A compensation waveform (e.g., quadratic waveform), having a fixed height and waveform, is also generated and mixed with the main scan waveform (e.g., through a variable mixer) to form a beam scanning waveform. The mixture ratio may be adjusted by an instantaneous vacuum pressure signal, which can be performed at much higher speed and ease than continuously modifying scan waveform. The mixture provides a beam scanning waveform comprising a non-constant slope that changes an ion beam's velocity as it moves across a workpiece. Therefore, the resultant beam scanning waveform, with a non-constant slope, is able to account for pressure non-uniformities in dose along the fast scan direction.

Abstract translation: 提供了一种方法和装置，用于改善经历沿着束线的压力增加的离子束的植入物均匀性。 该方法包括产生主扫描波形，该主扫描波形以跨过工件的基本上恒定的速度移动离子束。 还产生具有固定高度和波形的补偿波形（例如，二次波形），并与主扫描波形（例如，通过可变混频器）混合以形成波束扫描波形。 可以通过瞬时真空压力信号来调节混合比，其可以以比连续修改扫描波形更高的速度和容易性进行。 该混合物提供包括非恒定斜率的波束扫描波形，当斜波在工件上移动时改变离子束的速度。 因此，具有非恒定斜率的合成光束扫描波形能够解释沿着快速扫描方向的剂量中的压力不均匀性。

公开(公告)号：WO2021257689A1

公开(公告)日：2021-12-23

申请号：PCT/US2021/037607

申请日：2021-06-16

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： SATOH, Shu ,  PLATOW, Wilhelm

IPC: H01J37/317 ,  H01J37/05 ,  H01J37/147 ,  H01J37/09 ,  H01J2237/045 ,  H01J2237/0451 ,  H01J2237/0458 ,  H01J2237/24585 ,  H01J2237/31701 ,  H01J37/141 ,  H01J37/1471 ,  H01J37/1474 ,  H01J37/153 ,  H01J37/21 ,  H01J37/3171

Abstract: An ion implantation system has an ion source configured to form an ion beam. A mass analyzer mass analyzes the ion beam, a scanning element scans the ion beam in a horizontal direction and a parallelizing lens translates the fanned-out scanned beam into parallel shifting scanning ion beam. For applications needing not only a mean incident angle, but highly-aligned ion incident angles and a tight angular distribution, a slit apparatus is positioned at horizontal and/or vertical front focal points of the parallelizing lens. Minimum horizontal and/or vertical angular distributions of the ion beam on the workpiece are attained by controlling a beam focusing lens upstream of the scanning element for the best beam transmission through the slit system.

公开(公告)号：WO2020243323A1

公开(公告)日：2020-12-03

申请号：PCT/US2020/034948

申请日：2020-05-28

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： SATOH, Shu

IPC: H01J37/317 ,  C23C14/48 ,  H05H7/22

Abstract: An ion implantation system (100) has a source that generates ions from a beam species to form an ion beam, and a mass analyzer mass analyzes the ion beam. An accelerator receives the ion beam having ions at a first charge state and exits the ion beam having ions at a second positive charge state. The accelerator has a charge stripper, a gas source, and a plurality of accelerator stages. The charge stripper converts the ions from the first charge state to the second charge state, The gas source provides a high molecular weight gas, such as hexafluoride, to the charge stripper, and the plurality of accelerator stages respectively accelerate the ions. An end station supports a workpiece to be implanted with ions at the second charge state.

公开(公告)号：WO2016106422A1

公开(公告)日：2016-06-30

申请号：PCT/US2015/067720

申请日：2015-12-28

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： SATOH, Shu

IPC: H01J37/317 ,  H01J37/304

CPC classification number: H01J37/3045 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/244 ,  H01J2237/24405 ,  H01J2237/24542

Abstract: An ion implantation system measurement system may have a scan arm (166) that rotates about an axis (184) and a workpiece support (168) to translate a workpiece through the ion beam (112). A first measurement component (162) may be downstream of the scan arm and provides a first signal from the ion beam. A second measurement component (164) with a mask (190) and a blocking plate (202) may be coupled (182) to the scan arm to provide a second signal from the ion beam with the rotation of the scan arm; wherein the mask permits varying amounts of the ion radiation from the ion beam to enter a Faraday cup (200) based on an angular orientation between the mask and the ion beam; and the blocking plate selectively blocks the ion beam to the Faraday cup based on the rotation of the scan arm. A controller is configured to determining a size of the ion beam and a relative orientation between the ion beam and the workpiece based, at least in part, on the one or more signals from the measurement component(s).

Abstract translation: 离子注入系统测量系统可以具有围绕轴线（184）和工件支撑件（168）旋转以使工件平移通过离子束（112）的扫描臂（166）。 第一测量部件（162）可以在扫描臂的下游并且提供来自离子束的第一信号。 具有掩模（190）和阻挡板（202）的第二测量部件（164）可以耦合（182）到扫描臂，以提供来自离子束的第二信号与扫描臂的旋转; 其中所述掩模允许来自所述离子束的不同量的离子辐射基于所述掩模和所述离子束之间的角度取向进入法拉第杯（200）; 并且阻挡板基于扫描臂的旋转选择性地将离子束阻挡到法拉第杯。 控制器被配置为至少部分地基于来自测量部件的一个或多个信号来确定离子束的尺寸和离子束与工件之间的相对取向。

公开(公告)号：WO2014055182A1

公开(公告)日：2014-04-10

申请号：PCT/US2013/057266

申请日：2013-10-30

Applicant: AXCELIS TECHNOLOGIES, INC. ,  REECE, Ronald ,  KONDRATENKO, Serguei ,  SATOH, Shu ,  RAY, Andrew

Inventor： REECE, Ronald ,  KONDRATENKO, Serguei ,  SATOH, Shu ,  RAY, Andrew

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01L22/26 ,  C23C14/48 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31703 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.

Abstract translation: 提供了离子注入系统，其具有被配置为向工件提供具有束密度的点离子束的离子注入装置，其中工件具有与其相关联的晶体结构。 扫描系统沿着一个或多个轴线相对于彼此迭代扫描一个或多个点离子束和工件。 还提供控制器并且构造成当工件上的预定位置暴露于点离子束时，建立工件的预定局部温度。 因此，在预定位置处实现了工件的晶体结构的预定的局部混乱，其中控制器被配置为控制点离子束的束密度中的一个或多个以及与扫描系统相关联的占空比，以建立 工件在工件上预定位置的局部温度。

公开(公告)号：EP2297764A2

公开(公告)日：2011-03-23

申请号：EP09798245.8

申请日：2009-06-23

Applicant: Axcelis Technologies, Inc.

Inventor： SATOH, Shu ,  SIERADSKI, Manny ,  EISNER, Edward

IPC: H01J27/02 ,  H01J27/00

CPC classification number: H01J37/05 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/057 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/31703

Abstract: An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber (422, 216) that encloses an array of individually controlled gas jets (402, 506), wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam (110), wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector (114) that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.