公开(公告)号：DE3789846D1

公开(公告)日：1994-06-23

申请号：DE3789846

申请日：1987-10-06

Applicant: CANON KK

Inventor： KOMIYAMA KATSUMI ,  FUKAYA MASAKI ,  YOKONO KOJIRO ,  TOMA HITOSHI

IPC: H01L27/146 ,  H04N1/031 ,  H04N1/00 ,  H01L27/14 ,  H01L31/02

Abstract: An image reading device has an entrance window provided in a substrate and receiving the light illuminating an information bearing member bearing information to be read. A photosensor is provided on the substrate for receiving the light that has entered through the entrance window and has been reflected by the information bearing member. Further, a protective layer is formed on the photosensor opposite to the substrate, in order to maintain a constant distance between the information bearing member and the photosensor, and has a multi-layer structure of separate functions, comprising a first layer (129) of a first function at the side of photosensor, and a second layer (130) of another function different from the first function.

公开(公告)号：GB2176052A

公开(公告)日：1986-12-10

申请号：GB8609295

申请日：1986-04-16

Applicant: CANON KK

Inventor： KOMATSU TOSHIYUKI ,  FUKAYA MASAKI ,  ITABASHI SATOSHI

IPC: H01L27/146 ,  H01L27/14 ,  H01L31/0248 ,  H01L31/08 ,  H01L31/09 ,  H01L31/20 ,  H01L21/20 ,  C01B33/02 ,  C23C16/24

Abstract: A photosensor having a substrate, a photoconductive layer formed on the substrate and containing amorphous silicon, a pair of electrodes electrically connected to the photoconductive layer and a light receiving section having a predetermined area for applying light to the photoconductive layer, wherein the photoconductive layer is formed by producing a precursor (SiX) including at least silicon atoms and halogen atoms and an active seed (H) including hydrogen atoms, at the region outside of a layer forming spatial region where the photoconductive layer is formed, and by introducing the precursor and the active seed into the layer forming spatial region to deposit amorphous silicon on the surface of the substrate.

公开(公告)号：DE3612101A1

公开(公告)日：1986-10-23

申请号：DE3612101

申请日：1986-04-10

Applicant: CANON KK

Inventor： HATANAKA KATSUNORI ,  NAKAGAWA KATSUMI ,  FUKAYA MASAKI ,  KAWAKAMI SOICHIRO

IPC: H01L27/146 ,  H01L27/14 ,  H04N1/028 ,  H04N1/03 ,  H04N1/193 ,  H04N5/335 ,  H04N5/369 ,  H04N5/374 ,  H04N1/46

公开(公告)号：GB2163289A

公开(公告)日：1986-02-19

申请号：GB8518195

申请日：1985-07-18

Applicant: CANON KK

Inventor： FUKAYA MASAKI ,  KOMATSU TOSHIYUKI ,  SHOJI TATSUMI ,  KAMIO MASARU ,  SEKIMURA NOBUYUKI

IPC: H01L27/146 ,  H01L31/09 ,  H04N1/031 ,  H04N1/40 ,  H01L31/04

Abstract: There is a photosensor comprising: a photoconductive layer containing amorphous silicon provided on a substrate in which this photoconductive layer consists of laminated films of two or more layers having different refractive indexes and the refractive index of the lowest layer of the laminated films is not larger than 3.2 for the incident light of a wavelength of 6328 ANGSTROM ; a pair of electrodes provided in electrical contact with the photoconductive layer; and a photo sensing section. A long size image sensor unit is constituted by a plurality of such photosensors arranged like an array, a matrix drive circuit to matrix-drive each photosensor, and a light source such as light emitting diodes or a fluorescent lamp to illuminate an original to be read. With this image sensor unit, it is possible to provide a low-cost image reading apparatus which can read an image on the original at a high speed in which: the uniformity of the characteristic of each photosensor is improved; a variation in signal between the bits is reduced; a correction circuit for such a variation is unnecessary; and the peel-off of the photoconductive layer does not occur. A method of manufacturing such photosensors is also disclosed.

公开(公告)号：DE3525881A1

公开(公告)日：1986-01-30

申请号：DE3525881

申请日：1985-07-19

Applicant: CANON KK

Inventor： FUKAYA MASAKI ,  KOMATSU TOSHIYUKI ,  SHOJI TATSUMI ,  KAMIO MASARU ,  SEKIMURA NOBUYUKI

IPC: H01L27/146 ,  H01L31/09 ,  H04N1/031 ,  H04N1/40 ,  H01L27/14 ,  H01L31/18 ,  H04N1/028

Abstract: There is a photosensor comprising: a photoconductive layer containing amorphous silicon provided on a substrate in which this photoconductive layer consists of laminated films of two or more layers having different refractive indexes and the refractive index of the lowest layer of the laminated films is not larger than 3.2 for the incident light of a wavelength of 6328 ANGSTROM ; a pair of electrodes provided in electrical contact with the photoconductive layer; and a photo sensing section. A long size image sensor unit is constituted by a plurality of such photosensors arranged like an array, a matrix drive circuit to matrix-drive each photosensor, and a light source such as light emitting diodes or a fluorescent lamp to illuminate an original to be read. With this image sensor unit, it is possible to provide a low-cost image reading apparatus which can read an image on the original at a high speed in which: the uniformity of the characteristic of each photosensor is improved; a variation in signal between the bits is reduced; a correction circuit for such a variation is unnecessary; and the peel-off of the photoconductive layer does not occur. A method of manufacturing such photosensors is also disclosed.

公开(公告)号：DE3112209A1

公开(公告)日：1982-01-28

申请号：DE3112209

申请日：1981-03-27

Applicant: CANON KK

Inventor： KOMATSU TOSHIYUKI ,  FUKAYA MASAKI ,  UZAWA SHUNICHI ,  YOSHIOKA SEISHIRO ,  SHIRATO YOSHIAKI

IPC: H01L27/146 ,  H01L31/09 ,  H01L31/08 ,  H01L27/14

Abstract: A photoelectric transducing element comprising (a) a substrate; (b) first electrode provided on said substrate; (c) first contact layer to form an ohmic contact with said first electrode with respect to electric charge in at least one polarity; (d) a photoconductive layer provided in contact with said first contact layer and composed of an amorphous material containing silicon atom as a matrix and hydrogen atom, or halogen atom, or both, at a ratio of 1 to 30 atomic % with respect to said silicon atom; (e) second contact layer provided in contact with said photoconductive layer; and (f) second electrode to form an ohmic contact with said second contact layer with respect to said charge.

公开(公告)号：GB2185852B

公开(公告)日：1990-03-21

申请号：GB8701421

申请日：1987-01-22

Applicant: CANON KK

Inventor： ITABASHI SATOSHI ,  KAWAKAMI SOICHIRO ,  TERADA KATSUNORI ,  SUZUKI HIDEYUKI ,  FURUSHIMA TERUHIKO ,  FUKAYA MASAKI

IPC: H01L27/146 ,  H01L31/0264 ,  H01L31/09 ,  H01L31/20

Abstract: A method of producing a photosensor having a photoconductive layer and a pair of electrodes provided through an ohmic contact layer on the same surface of the photoconductive layer for applying a voltage to the photoconductive layer. The method comprises the steps of: forming an insulating layer on one surface of the photoconductive layer except at portions where the pair of electrodes is to be formed; forming a layer of an ohmic contact layer forming material on the insulating layer; forming a layer of an electrode forming material on the layer of an ohmic contact layer forming material; and removing the electrode forming material except at the portions where the pair of electrodes is to be formed, and the ohmic contact layer forming material.

公开(公告)号：GB2163289B

公开(公告)日：1988-06-22

申请号：GB8518195

申请日：1985-07-18

Applicant: CANON KK

Inventor： FUKAYA MASAKI ,  KOMATSU TOSHIYUKI ,  SHOJI TATSUMI ,  KAMIO MASARU ,  SEKIMURA NOBUYUKI

IPC: H01L27/146 ,  H01L31/09 ,  H04N1/031 ,  H04N1/40 ,  H01L31/04

Abstract: There is a photosensor comprising: a photoconductive layer containing amorphous silicon provided on a substrate in which this photoconductive layer consists of laminated films of two or more layers having different refractive indexes and the refractive index of the lowest layer of the laminated films is not larger than 3.2 for the incident light of a wavelength of 6328 ANGSTROM ; a pair of electrodes provided in electrical contact with the photoconductive layer; and a photo sensing section. A long size image sensor unit is constituted by a plurality of such photosensors arranged like an array, a matrix drive circuit to matrix-drive each photosensor, and a light source such as light emitting diodes or a fluorescent lamp to illuminate an original to be read. With this image sensor unit, it is possible to provide a low-cost image reading apparatus which can read an image on the original at a high speed in which: the uniformity of the characteristic of each photosensor is improved; a variation in signal between the bits is reduced; a correction circuit for such a variation is unnecessary; and the peel-off of the photoconductive layer does not occur. A method of manufacturing such photosensors is also disclosed.

公开(公告)号：DE3702187A1

公开(公告)日：1987-07-30

申请号：DE3702187

申请日：1987-01-26

Applicant: CANON KK

Inventor： ITABASHI SATOSHI ,  KAWAKAMI SOICHIRO ,  TERADA KATSUNORI ,  SUZUKI HIDEYUKI ,  FURUSHIMA TERUHIKO ,  FUKAYA MASAKI

IPC: H01L27/146 ,  H01L31/0264 ,  H01L31/09 ,  H01L31/20 ,  H01L31/18

Abstract: A method of producing a photosensor having a photoconductive layer and a pair of electrodes provided through an ohmic contact layer on the same surface of the photoconductive layer for applying a voltage to the photoconductive layer. The method comprises the steps of: forming an insulating layer on one surface of the photoconductive layer except at portions where the pair of electrodes is to be formed; forming a layer of an ohmic contact layer forming material on the insulating layer; forming a layer of an electrode forming material on the layer of an ohmic contact layer forming material; and removing the electrode forming material except at the portions where the pair of electrodes is to be formed, and the ohmic contact layer forming material.

公开(公告)号：GB2184886A

公开(公告)日：1987-07-01

申请号：GB8629106

申请日：1986-12-05

Applicant: CANON KK

Inventor： ITABASHI SATOSHI ,  SHOJI TATSUMI ,  FUKAYA MASAKI

IPC: H01L27/14 ,  H01L27/146 ,  H01L31/0248 ,  H01L31/0392 ,  H01L31/08 ,  H01L31/09

Abstract: A photosensor array for use with an image processing apparatus has a plurality of photosensors disposed in an array. Each photosensor includes a substrate, a photoconductive layer formed on the substrate and made of an amorphous silicon, and a pair of electrodes disposed on a surface of the photoconductive layer, the electrodes being spaced apart from each other by a certain distance partially defining a light receiving region of the photosensor. In the phososensor array, the photoconductive layer is constructed as of two or more laminated layers, and the lower layer positioned nearer to the substrate has a low content of oxygen.