Abstract:
Self-aligned, opposed, nanometer dimension tips (12, 22) are fabricated in pairs, one of each pair being located on a movable (24) single crystal beam, with the beam being movable in three dimensions with respect to a substrate (18) carrying the other tip (12) of a pair. Motion of one tip with respect to the other is controlled or sensed by transducers (120, 122, 124, 126) formed on the supporting beams (62, 64). Spring means (76, 80, 86, 88) in each beam allow axial motion of the beam. The tips (12, 22) and beams (62, 64) are fabricated from single crystal silicon substrate (18) and the tips (12, 22) may be electrically isolated from the substrate (18) by fabricating insulating segments (40, 54) in the beam structure.
Abstract:
A single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independently of crystal orientation.
Abstract:
Self-aligned, opposed, nanometer dimension tips (12, 22) are fabricated in pairs, one of each pair being located on a movable (24) single crystal beam, with the beam being movable in three dimensions with respect to a substrate (18) carrying the other tip (12) of a pair. Motion of one tip with respect to the other is controlled or sensed by transducers (120, 122, 124, 126) formed on the supporting beams (62, 64). Spring means (76, 80, 86, 88) in each beam allow axial motion of the beam. The tips (12, 22) and beams (62, 64) are fabricated from single crystal silicon substrate (18) and the tips (12, 22) may be electrically isolated from the substrate (18) by fabricating insulating segments (40, 54) in the beam structure.
Abstract:
A tunable electromechanical resonator structure incorporates an electrostatic actuator (66, 68) which permits reduction or enhancement of the resonant frequency of the structure. The actuator consists of two sets of opposed electrode fingers, each set having a multiplicity of spaced, parallel fingers (70, 72, 84, 90). One set (70, 72) is mounted on a movable portion (54) of the resonator structure and one set (84, 90) is mounted on an adjacent fixed base (132, 134) on the substrate, adjacent ends spaced apart by a gap (86, 92). An adjustable bias voltage (130) across the sets of electrodes adjusts the resonant frequency of the movable structure.
Abstract:
A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.
Abstract:
A torsional cantilever is microfabricated for reduced size to increase its resonance frequency, increase its scanning speed, and permit fabrication of large numbers in an array to provide parallel scanning. The cantilever may incorporate a tip for highly sensitive force detection. The device preferably includes a cantilever arm and a counterbalance mounted on opposite sides of a laterally extending torsional beam fixed at its outer ends. Sensors detect rotation of the cantilever arm and may provide control of sensor locator through a feedback loop.
Abstract:
Self-aligned, opposed, nanometer dimension tips (12, 22) are fabricated in pairs, one of each pair being located on a movable (24) single crystal beam, with the beam being movable in three dimensions with respect to a substrate (18) carrying the other tip (12) of a pair. Motion of one tip with respect to the other is controlled or sensed by transducers (120, 122, 124, 126) formed on the supporting beams (62, 64). Spring means (76, 80, 86, 88) in each beam allow axial motion of the beam. The tips (12, 22) and beams (62, 64) are fabricated from single crystal silicon substrate (18) and the tips (12, 22) may be electrically isolated from the substrate (18) by fabricating insulating segments (40, 54) in the beam structure.
Abstract:
A microelectromechanical accelerometer (60) having submicron features is fabricated from a single crystal silicon substrate (10). The accelerometer includes a movable portion incorporating an axial beam (102) carrying laterally-extending high aspect ratio released fingers (110-117, 120-127) cantilevered above the floor of a cavity formed in the substrate during the fabrication process. The movable portion is supported by restoring springs (132, 142) having controllable flexibility to vary the resonant frequency of the structure. A multiple-beam structure provides stiffness in the movable portion for accuracy.
Abstract:
The invention provides a single mask, low temperature reactive ion etching process for fabricating high aspect ratio, released single crystal microelectromechanical structures independent of crystal orientation. A dielectric mask (12) on a single-crystal substrate (154) is patterned to define isolating trenches. A protective conformal layer (28) is applied to the resultant structure. The conformal layer (28) on the floor of the trenches is removed and a second etch deepens the trench to expose the mesa walls which are removed during the release step by isotropic etching. A metal layer (44) is formed on the resultant structure providing opposed plates (156) and (158) of a capacitor. The cantilever beam (52) with the supporting end wall (152) extends the grid-like structure (150) into the protection of the deepened isolation trenches (54). A membrane can be added to the released structures to increase their weight for use in accelerometers, and polished for use as movable mirrors.