公开(公告)号：US20140287653A1

公开(公告)日：2014-09-25

申请号：US14187150

申请日：2014-02-21

Applicant: EBARA CORPORATION

Inventor： Takahiro SHIMANO ,  Mutsumi TANIKAWA ,  Hisanori MATSUO ,  Kuniaki YAMAGUCHI ,  Katsuhide WATANABE

IPC: B24B53/017 ,  B24B37/005

CPC classification number: B24B53/017 ,  B24B37/005

Abstract: The method includes the steps of measuring a surface height of a polishing member 10 at each of plural oscillation sections Z1 to Z5 which are defined in advance on the polishing member 10 along an oscillation direction of a dresser 5; calculating a difference between a current profile obtained from measured values of the surface height and a target profile of the polishing member 10; and correcting moving speeds of the dresser 5 in the plural oscillation sections Z1 to Z5 so as to eliminate the difference.

Abstract translation: 该方法包括以下步骤：沿着修整器5的摆动方向在研磨部件10上预先确定的多个振动部Z1〜Z5的每一个上测量研磨部件10的表面高度; 计算从抛光构件10的表面高度和目标轮廓的测量值获得的电流曲线之间的差; 并修正多个振荡部Z1〜Z5中的修整器5的移动速度，以消除差异。

公开(公告)号：US20240308018A1

公开(公告)日：2024-09-19

申请号：US18570406

申请日：2022-05-24

Applicant: EBARA CORPORATION

Inventor： Yuta SUZUKI ,  Hiroki TAKAHASHI ,  Akira NAKAMURA ,  Katsuhide WATANABE ,  Hisanori MATSUO ,  Takahito KAGOSHIMA

IPC: B24B37/005 ,  H01L21/67

CPC classification number: B24B37/005 ,  H01L21/67253 ,  H01L21/67288

Abstract: Included are: at least one sensor that detects a physical quantity of an object during polishing and/or during cleaning and/or during drying of a substrate; a conversion section that converts a sensor value during polishing and/or during cleaning and/or during drying detected by the sensor into a feature amount for each processing step with respect to a trained machine learning model; and an inference section that outputs at least one predicted value of a number of defects, a size of a defect, and a position of a defect in a target substrate by inputting target data including the feature amount to the trained machine learning model.

公开(公告)号：US20240087963A1

公开(公告)日：2024-03-14

申请号：US18505194

申请日：2023-11-09

Applicant: EBARA CORPORATION

Inventor： Akira FUKUNAGA ,  Katsuhide WATANABE ,  Itsuki KOBATA ,  Manabu TSUJIMURA

IPC: H01L21/66 ,  B24B37/005 ,  B24B37/015 ,  B24B37/04 ,  H01L21/321

CPC classification number: H01L22/12 ,  B24B37/005 ,  B24B37/0056 ,  B24B37/015 ,  B24B37/044 ,  H01L21/3212

Abstract: To planarize a substrate having irregularities on its surface. Provided is a method of chemical mechanical polishing of a substrate. The method includes the step of polishing the substrate using a processing solution, and the step of changing concentration of an effective component in the processing solution, which contributes to the polishing of the substrate.

公开(公告)号：US20200171618A1

公开(公告)日：2020-06-04

申请号：US16787892

申请日：2020-02-11

Applicant: Ebara Corporation

Inventor： Itsuki KOBATA ,  Katsuhide WATANABE ,  Hozumi YASUDA ,  Yuji YAGI ,  Nobuyuki TAKAHASHI ,  Koichi TAKEDA

IPC: B24B37/013 ,  B24B37/20 ,  B24B37/04

Abstract: One object is to provide a polishing machine and a polishing method capable of improving a processing accuracy on the surface of an object. A method of polishing an object is provided. Such a method comprises a first step of polishing an object by moving the object and a first polishing pad having a smaller dimension than that of the object relative to each other while the first polishing pad is made to contact the object, a second step of polishing the object, after the first step of polishing, by moving the object and a second polishing pad having a larger dimension than that of the object relative to each other while the second polishing pad is made to contact the object, and a step of detecting the state of the surface of the object before the first step of polishing.

公开(公告)号：US20180056470A1

公开(公告)日：2018-03-01

申请号：US15688281

申请日：2017-08-28

Applicant: EBARA CORPORATION

Inventor： Masayoshi IMAI ,  Katsuhiko TOKUSHIGE ,  Suguru OGURA ,  Katsuhide WATANABE ,  Junji KUNISAWA ,  Takeshi IIZUMI ,  Mitsuru MIYAZAKI

IPC: B24B5/35 ,  B08B3/10 ,  B24B57/02 ,  B08B3/08 ,  B08B3/02 ,  C01B15/01 ,  C11D11/00 ,  C11D7/34

CPC classification number: B24B5/35 ,  B08B3/024 ,  B08B3/08 ,  B08B3/10 ,  B24B57/02 ,  C01B15/01 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/08 ,  C11D7/34 ,  C11D11/0064

Abstract: A substrate processing apparatus includes a polisher configured to polish a substrate using a polishing liquid, a first cleaner configured to clean the substrate polished by the polisher using sulfuric acid and hydrogen peroxide water, a second cleaner configured to clean the substrate cleaned by the first cleaner using a basic chemical liquid and hydrogen peroxide water, and a drier configured to dry the substrate cleaned by the second cleaner.

公开(公告)号：US20150017880A1

公开(公告)日：2015-01-15

申请号：US14327535

申请日：2014-07-09

Applicant: EBARA CORPORATION

Inventor： Toshikazu NOMURA ,  Takeshi IIZUMI ,  Katsuhide WATANABE ,  Yoichi KOBAYASHI

IPC: B24B37/013 ,  H01L21/66 ,  B24B49/12 ,  G01B11/06 ,  B24B37/005 ,  B24B37/34

CPC classification number: B24B37/013 ,  B24B37/005 ,  B24B37/34 ,  B24B49/12 ,  G01B11/0633 ,  H01L22/12 ,  H01L22/26

Abstract: A film-thickness measuring apparatus and a film-thickness measuring method capable of improving an accuracy of the film-thickness measurement are disclosed. The film-thickness measuring apparatus includes a substrate stage configured to support a substrate horizontally, a rinsing water supply structure configured to supply rinsing water onto an entire surface of the substrate on the substrate stage, a film-thickness measuring head configured to transmit light to a measurement area of the surface of the substrate on the substrate stage, produce a spectrum of reflected light from the measurement area, and determine a film thickness of the substrate from the spectrum, and a fluid supply structure configured to form a flow of a gas on a path of the light and supply the flow of the gas onto the measurement area.

Abstract translation: 公开了能够提高膜厚测量精度的膜厚测量装置和膜厚测量方法。 膜厚测量装置包括：被配置为水平地支撑基板的基板台;漂洗水供给结构，其构造成在基板载台上的基板的整个表面上提供冲洗水;膜厚测量头，被配置为将光传送到 衬底载台上的衬底表面的测量区域产生来自测量区域的反射光谱，并从光谱确定衬底的膜厚度，以及构造成形成气体流的流体供给结构 在光的路径上并且将气体的流量供应到测量区域上。

公开(公告)号：US20140342642A1

公开(公告)日：2014-11-20

申请号：US14184655

申请日：2014-02-19

Applicant: EBARA CORPORATION

Inventor： Takahiro SHIMANO ,  Mutsumi TANIKAWA ,  Hisanori MATSUO ,  Kuniaki YAMAGUCHI ,  Katsuhide WATANABE

IPC: B24B53/00 ,  B24B53/017 ,  B24B53/02

CPC classification number: B24B53/005 ,  B24B53/017 ,  B24B53/02

Abstract: The method includes: calculating an increment of a sliding distance of a dresser by multiplying a relative speed between the dresser and a polishing member by a contact time between them; correcting the increment of the sliding distance by multiplying the calculated increment of the sliding distance by at least one correction coefficient; calculating the sliding distance by repeatedly adding the corrected increment of the sliding distance to the sliding distance according to elapse of time; and producing the sliding-distance distribution of the dresser from the obtained sliding distance and a position of a sliding-distance calculation point. The at least one correction coefficient includes an unevenness correction coefficient provided for the sliding-distance calculation point. The unevenness correction coefficient is a correction coefficient that allows a profile of the polishing member to reflect a difference between an amount of scraped material of the polishing member in its raised portion and an amount of scraped material of the polishing member in its recess portion.

Abstract translation: 该方法包括：通过将修整器和抛光构件之间的相对速度乘以它们之间的接触时间来计算修整器的滑动距离的增量; 通过将计算出的滑动距离的增加乘以至少一个校正系数来校正滑动距离的增量; 通过根据时间经过反复地将滑动距离的校正增量反复地添加到滑动距离来计算滑动距离; 并且从获得的滑动距离和滑动距离计算点的位置产生修整器的滑动距离分布。 所述至少一个校正系数包括为所述滑动距离计算点提供的不均匀性校正系数。 不均匀性校正系数是使研磨部件的轮廓反映研磨部件的凸起部分的刮削材料量与其凹部中研磨部件的刮削材料量之间的差异的校正系数。

公开(公告)号：US20240316720A1

公开(公告)日：2024-09-26

申请号：US18734791

申请日：2024-06-05

Applicant: Ebara Corporation

Inventor： Koichi TAKEDA ,  Tsuneo TORIKOSHI ,  Kunio OISHI ,  Katsuhide WATANABE ,  Hozumi YASUDA ,  Yu ISHII

IPC: B24B37/005 ,  B24B37/12 ,  B24B37/14 ,  B24B49/03 ,  B24B49/04 ,  B24B55/06 ,  H01L21/304

CPC classification number: B24B37/005 ,  B24B37/12 ,  B24B37/14 ,  B24B49/03 ,  B24B49/04 ,  B24B55/06 ,  H01L21/304

Abstract: A local polishing system comprises: a particle estimation unit (30) for estimating the film thickness distribution of a wafer; a local polishing region setting unit (11) for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit (12) for selecting a polishing head based on the size of the local polishing region; a model storage (20) holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator (13) that puts an attribute of the local polishing region set by the local polishing region setting unit (11) into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter (15) for transmitting data of the polishing recipe to a local polishing module (200) that performs local polishing.

公开(公告)号：US20190240799A1

公开(公告)日：2019-08-08

申请号：US16338931

申请日：2017-09-07

Applicant: Ebara Corporation

Inventor： Koichi TAKEDA ,  Tsuneo TORIKOSHI ,  Kunio OISHI ,  Katsuhide WATANABE ,  Hozumi YASUDA ,  Yu ISHII

IPC: B24B37/005 ,  B24B37/14 ,  B24B49/03 ,  B24B49/04 ,  B24B55/06 ,  H01L21/304

CPC classification number: B24B37/005 ,  B24B37/12 ,  B24B37/14 ,  B24B49/03 ,  B24B49/04 ,  B24B55/06 ,  H01L21/304

Abstract: A local polishing system comprises: a particle estimation unit (30) for estimating the film thickness distribution of a wafer; a local polishing region setting unit (11) for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit (12) for selecting a polishing head based on the size of the local polishing region; a model storage (20) holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator (13) that puts an attribute of the local polishing region set by the local polishing region setting unit (11) into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter (15) for transmitting data of the polishing recipe to a local polishing module (200) that performs local polishing.

公开(公告)号：US20180286717A1

公开(公告)日：2018-10-04

申请号：US15935922

申请日：2018-03-26

Applicant: EBARA CORPORATION

Inventor： Katsuhide WATANABE ,  Itsuki KOBATA

IPC: H01L21/67

Abstract: Provided is a substrate processing apparatus for making a catalyst and a substrate close to each other or be in contact with each other in the presence of processing liquid to etch a processing target area of the substrate, the substrate processing apparatus including a substrate holder for holding a substrate, and a catalyst holder for holding a catalyst, wherein the catalyst holder comprises a base plate having high rigidity, a piezoelectric element arranged to be adjacent to the base plate, a catalyst holding base having high rigidity arranged to be adjacent to the piezoelectric element, and a catalyst held by the catalyst holding base, and wherein the substrate processing apparatus further comprises a control device for controlling a driving voltage to be applied to the piezoelectric element.