公开(公告)号：US20150111314A1

公开(公告)日：2015-04-23

申请号：US14589988

申请日：2015-01-05

Applicant: EBARA CORPORATION

Inventor： Takeshi IIZUMI ,  Katsuhide WATANABE ,  Yoichi KOBAYASHI

IPC: H01L21/321 ,  B24B49/12 ,  H01L21/67 ,  B24B37/013 ,  H01L21/66 ,  H01L21/3105

CPC classification number: H01L21/3212 ,  B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  G01B7/105 ,  G01B11/0625 ,  G01B11/0683 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/67075 ,  H01L21/67092 ,  H01L21/67253 ,  H01L21/76224 ,  H01L21/76819 ,  H01L21/7684 ,  H01L22/12 ,  H01L22/20

Abstract: A method of polishing a substrate having a film is provided. The method includes: performing polishing of the substrate in a polishing section; transporting the polished substrate to a wet-type film thickness measuring device prior to cleaning and drying of the substrate; measuring a thickness of the film by the wet-type film thickness measuring device; comparing the thickness with a predetermined target value; and if the thickness has not reached the predetermined target value, performing re-polishing of the substrate in the polishing section prior to cleaning and drying of the substrate.

Abstract translation: 提供了抛光具有膜的基板的方法。 该方法包括：对抛光部分中的基板进行抛光; 在清洗和干燥基板之前将抛光的基板运送到湿式膜厚测量装置; 通过湿式膜厚测量装置测量膜的厚度; 将厚度与预定目标值进行比较; 并且如果厚度未达到预定目标值，则在清洁和干燥基板之前对抛光部分中的基板进行再抛光。

公开(公告)号：US20140017824A1

公开(公告)日：2014-01-16

申请号：US13938018

申请日：2013-07-09

Applicant: EBARA CORPORATION

Inventor： Takeshi IIZUMI ,  Katsuhide WATANABE ,  Yoichi KOBAYASHI

IPC: H01L21/306

CPC classification number: H01L21/3212 ,  B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  G01B7/105 ,  G01B11/0625 ,  G01B11/0683 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/67075 ,  H01L21/67092 ,  H01L21/67253 ,  H01L21/76224 ,  H01L21/76819 ,  H01L21/7684 ,  H01L22/12 ,  H01L22/20

Abstract: A method of polishing a substrate having a film is provided. The method includes: performing polishing of the substrate in a polishing section; transporting the polished substrate to a wet-type film thickness measuring device prior to cleaning and drying of the substrate; measuring a thickness of the film by the wet-type film thickness measuring device; comparing the thickness with a predetermined target value; and if the thickness has not reached the predetermined target value, performing re-polishing of the substrate in the polishing section prior to cleaning and drying of the substrate.

Abstract translation: 提供了抛光具有膜的基板的方法。 该方法包括：对抛光部分中的基板进行抛光; 在清洗和干燥基板之前将抛光的基板运送到湿式膜厚测量装置; 通过湿式膜厚测量装置测量膜的厚度; 将厚度与预定目标值进行比较; 并且如果厚度未达到预定目标值，则在清洁和干燥基板之前对抛光部分中的基板进行再抛光。

公开(公告)号：US20230139947A1

公开(公告)日：2023-05-04

申请号：US17909966

申请日：2021-02-02

Applicant: EBARA CORPORATION

Inventor： Ban ITO ,  Takeshi IIZUMI ,  Gael ROYERE ,  Patrick ONG ,  Kevin VANDERSMISSEN ,  Katia DEVRIENDT

IPC: B24B37/04

Abstract: The present invention relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer. The present invention further relates to a computer-readable storage medium storing a program for causing the polishing apparatus to perform the polishing method. The polishing method includes: rotating a polishing table (3); and polishing a substrate (W) by pressing the substrate (W) against a polishing surface (2a). Polishing the substrate (W) includes a film-thickness profile adjustment process and a polishing-end-point detection process. The film-thickness profile adjustment process includes adjusting pressing forces on the substrate (W) against the polishing surface (2a) based on a plurality of film thicknesses, and determining a point in time at which a film-thickness index value has reached a film-thickness threshold value. The film-thickness index value is determined from at least one of the plurality of film thicknesses. The polishing-end-point detection process includes measuring a torque for rotating the polishing table (3) and determining a polishing end point based on the torque.

公开(公告)号：US20210305069A1

公开(公告)日：2021-09-30

申请号：US17212485

申请日：2021-03-25

Applicant: Ebara Corporation

Inventor： Takayuki KAJIKAWA ,  Takeshi IIZUMI ,  Masayoshi IMAI

IPC: H01L21/67 ,  B08B1/04 ,  B08B1/00 ,  B08B3/08 ,  B08B13/00

Abstract: As an aspect of the present invention, a cleaning apparatus for cleaning member has a holding part 100 holding a cleaning member assembly 1 having a cleaning member 90; an inner cleaning liquid supply part 110; an outer cleaning liquid supply part 120; and a control part 350 controlling the substrate cleaning apparatus to perform a first process in which the cleaning member 90 is pressed against a dummy substrate Wd at a first pressure and the outer cleaning liquid supply part 120 supplies the cleaning liquid to the dummy substrate Wd, and to perform a second process in which the cleaning member 90 is separated from the dummy substrate Wd or is pressed against the dummy substrate Wd at a second pressure which is equal to or less than the first pressure and the inner cleaning liquid supply part 110 supplies the cleaning liquid.

公开(公告)号：US20230191460A1

公开(公告)日：2023-06-22

申请号：US17924939

申请日：2021-05-14

Applicant: EBARA CORPORATION

Inventor： Yuki TANAKA ,  Takeshi IIZUMI ,  Takayuki KAJIKAWA

IPC: B08B3/02

CPC classification number: B08B3/02 ,  B08B2240/00 ,  H01L21/67005

Abstract: A cleaning device includes: a substrate rotation mechanism that holds and rotates a substrate around center axis thereof; a first single-tube nozzle that discharges first cleaning liquid toward a top surface of the substrate; and a second single-tube nozzle that discharges second cleaning liquid toward the top surface of the substrate. The first single-tube nozzle and the second single-tube nozzle are disposed such that the second single-tube nozzle discharges the second cleaning liquid in a forward direction of a rotation direction of the substrate at a position farther away from the center of the substrate than a landing position of the first cleaning liquid, and a part is generated in which liquid flow on the top surface of the substrate after landing of the first cleaning liquid and liquid flow on the top surface of the substrate after landing of the second cleaning liquid are combined.

公开(公告)号：US20180056470A1

公开(公告)日：2018-03-01

申请号：US15688281

申请日：2017-08-28

Applicant: EBARA CORPORATION

Inventor： Masayoshi IMAI ,  Katsuhiko TOKUSHIGE ,  Suguru OGURA ,  Katsuhide WATANABE ,  Junji KUNISAWA ,  Takeshi IIZUMI ,  Mitsuru MIYAZAKI

IPC: B24B5/35 ,  B08B3/10 ,  B24B57/02 ,  B08B3/08 ,  B08B3/02 ,  C01B15/01 ,  C11D11/00 ,  C11D7/34

CPC classification number: B24B5/35 ,  B08B3/024 ,  B08B3/08 ,  B08B3/10 ,  B24B57/02 ,  C01B15/01 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/08 ,  C11D7/34 ,  C11D11/0064

Abstract: A substrate processing apparatus includes a polisher configured to polish a substrate using a polishing liquid, a first cleaner configured to clean the substrate polished by the polisher using sulfuric acid and hydrogen peroxide water, a second cleaner configured to clean the substrate cleaned by the first cleaner using a basic chemical liquid and hydrogen peroxide water, and a drier configured to dry the substrate cleaned by the second cleaner.

公开(公告)号：US20150017880A1

公开(公告)日：2015-01-15

申请号：US14327535

申请日：2014-07-09

Applicant: EBARA CORPORATION

Inventor： Toshikazu NOMURA ,  Takeshi IIZUMI ,  Katsuhide WATANABE ,  Yoichi KOBAYASHI

IPC: B24B37/013 ,  H01L21/66 ,  B24B49/12 ,  G01B11/06 ,  B24B37/005 ,  B24B37/34

CPC classification number: B24B37/013 ,  B24B37/005 ,  B24B37/34 ,  B24B49/12 ,  G01B11/0633 ,  H01L22/12 ,  H01L22/26

Abstract: A film-thickness measuring apparatus and a film-thickness measuring method capable of improving an accuracy of the film-thickness measurement are disclosed. The film-thickness measuring apparatus includes a substrate stage configured to support a substrate horizontally, a rinsing water supply structure configured to supply rinsing water onto an entire surface of the substrate on the substrate stage, a film-thickness measuring head configured to transmit light to a measurement area of the surface of the substrate on the substrate stage, produce a spectrum of reflected light from the measurement area, and determine a film thickness of the substrate from the spectrum, and a fluid supply structure configured to form a flow of a gas on a path of the light and supply the flow of the gas onto the measurement area.

Abstract translation: 公开了能够提高膜厚测量精度的膜厚测量装置和膜厚测量方法。 膜厚测量装置包括：被配置为水平地支撑基板的基板台;漂洗水供给结构，其构造成在基板载台上的基板的整个表面上提供冲洗水;膜厚测量头，被配置为将光传送到 衬底载台上的衬底表面的测量区域产生来自测量区域的反射光谱，并从光谱确定衬底的膜厚度，以及构造成形成气体流的流体供给结构 在光的路径上并且将气体的流量供应到测量区域上。