公开(公告)号：US20200176281A1

公开(公告)日：2020-06-04

申请号：US16780049

申请日：2020-02-03

Applicant: EBARA CORPORATION

Inventor： Koji MAEDA ,  Hiroshi SHIMOMOTO ,  Hisajiro NAKANO ,  Masayoshi IMAI ,  Yoichi SHIOKAWA

IPC: H01L21/67 ,  B24B37/04 ,  B24B37/34

Abstract: Various methods of cleaning a substrate are provided. In one aspect, method of cleaning a substrate, comprising: holding and rotating a substrate by a substrate holder; and supplying a chemical liquid to a chemical liquid nozzle and supplying two fluids to a two-fluid nozzle while moving the chemical-liquid nozzle and the two-fluid nozzle radially outwardly from the center to the periphery of the substrate, wherein the distance of the chemical-liquid nozzle from a rotating axis of the substrate holder is longer than the distance of the two-fluid nozzle from the rotating axis of the substrate holder while the chemical-liquid nozzle and the two-fluid nozzle are moved radially outwardly from the rotating axis of the substrate holder.

公开(公告)号：US20160372344A1

公开(公告)日：2016-12-22

申请号：US15186352

申请日：2016-06-17

Applicant: EBARA CORPORATION

Inventor： Masayoshi IMAI ,  Satomi HAMADA

IPC: H01L21/67 ,  F26B5/12 ,  F26B21/14 ,  H01L21/677

CPC classification number: H01L21/67034 ,  F26B5/12 ,  F26B5/16 ,  F26B15/12 ,  F26B21/004 ,  F26B21/14 ,  F26B2200/12 ,  H01L21/67028 ,  H01L21/6776

Abstract: A wafer drying apparatus capable of preventing formation of a watermark is disclosed. The wafer drying apparatus includes: a conveying mechanism configured to convey a wafer in a drying chamber; an inert-gas jet nozzle disposed above the conveying mechanism and configured to form a descending jet of an inert gas; and a liquid suction nozzle disposed upstream of the inert-gas jet nozzle with respect to a conveying direction of the wafer. A distance between the liquid suction nozzle and a surface of the wafer when the wafer is being conveyed by the conveying mechanism is in a range of 1 mm to 2 mm.

Abstract translation: 公开了一种能够防止形成水印的晶片干燥装置。 晶片干燥装置包括：输送机构，其构造成在干燥室内输送晶片; 惰性气体喷嘴，设置在所述输送机构的上方并被构造成形成惰性气体的下降射流; 以及相对于晶片的输送方向设置在惰性气体喷嘴的上游的液体吸嘴。 当晶片被输送机构输送时，液体吸嘴与晶片表面之间的距离在1mm至2mm的范围内。

公开(公告)号：US20230230857A1

公开(公告)日：2023-07-20

申请号：US18008331

申请日：2021-05-12

Applicant: EBARA CORPORATION

Inventor： Masayoshi IMAI ,  Mitsuru MIYAZAKI

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L21/67034 ,  H01L21/02057 ,  H01L21/67051 ,  H01L21/68785

Abstract: The present invention relates to a substrate processing apparatus for processing a substrate. The substrate processing apparatus (1) includes a controller (90). The controller (90) rotates the substrate (W) at a second speed, after rotating the substrate (W) at a first speed. The controller (90) supplies a dry fluid from a dry fluid nozzle (30) onto the substrate (W) for predetermined time after rotating the substrate (W) at the second speed, and while rotating the substrate (W) at a third speed. The controller (90) moves a dry fluid nozzle (30) from a center of the substrate (W) toward a peripheral portion of the substrate (W) while continuing to supply the dry fluid from the dry fluid nozzle (30).

公开(公告)号：US20210305069A1

公开(公告)日：2021-09-30

申请号：US17212485

申请日：2021-03-25

Applicant: Ebara Corporation

Inventor： Takayuki KAJIKAWA ,  Takeshi IIZUMI ,  Masayoshi IMAI

IPC: H01L21/67 ,  B08B1/04 ,  B08B1/00 ,  B08B3/08 ,  B08B13/00

Abstract: As an aspect of the present invention, a cleaning apparatus for cleaning member has a holding part 100 holding a cleaning member assembly 1 having a cleaning member 90; an inner cleaning liquid supply part 110; an outer cleaning liquid supply part 120; and a control part 350 controlling the substrate cleaning apparatus to perform a first process in which the cleaning member 90 is pressed against a dummy substrate Wd at a first pressure and the outer cleaning liquid supply part 120 supplies the cleaning liquid to the dummy substrate Wd, and to perform a second process in which the cleaning member 90 is separated from the dummy substrate Wd or is pressed against the dummy substrate Wd at a second pressure which is equal to or less than the first pressure and the inner cleaning liquid supply part 110 supplies the cleaning liquid.

公开(公告)号：US20180294171A1

公开(公告)日：2018-10-11

申请号：US15944654

申请日：2018-04-03

Applicant: EBARA CORPORATION

Inventor： Daisuke MINOSHIMA ,  Masayoshi IMAI

IPC: H01L21/67 ,  B08B3/02

Abstract: Various examples regarding substrate cleaning apparatus and methods, and related apparatus and method are disclosed. According to one embodiment, provided is a substrate cleaning apparatus including: a substrate holding and rotating module; an elongated cleaning member configured to come into contact with the substrate while the substrate is held and rotated by the substrate holding and rotating module; and a first nozzle and a second nozzle, both of which are arranged on an identical side with respect to a longitudinal direction of the cleaning member, wherein the first nozzle is operably adjusted to supply liquid more forcefully than liquid from the second nozzle, and the first nozzle is arranged so that the liquid from the first nozzle is reached to a first area located closer to the first nozzle than the cleaning member in the substrate.

公开(公告)号：US20180056470A1

公开(公告)日：2018-03-01

申请号：US15688281

申请日：2017-08-28

Applicant: EBARA CORPORATION

Inventor： Masayoshi IMAI ,  Katsuhiko TOKUSHIGE ,  Suguru OGURA ,  Katsuhide WATANABE ,  Junji KUNISAWA ,  Takeshi IIZUMI ,  Mitsuru MIYAZAKI

IPC: B24B5/35 ,  B08B3/10 ,  B24B57/02 ,  B08B3/08 ,  B08B3/02 ,  C01B15/01 ,  C11D11/00 ,  C11D7/34

CPC classification number: B24B5/35 ,  B08B3/024 ,  B08B3/08 ,  B08B3/10 ,  B24B57/02 ,  C01B15/01 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/08 ,  C11D7/34 ,  C11D11/0064

Abstract: A substrate processing apparatus includes a polisher configured to polish a substrate using a polishing liquid, a first cleaner configured to clean the substrate polished by the polisher using sulfuric acid and hydrogen peroxide water, a second cleaner configured to clean the substrate cleaned by the first cleaner using a basic chemical liquid and hydrogen peroxide water, and a drier configured to dry the substrate cleaned by the second cleaner.

公开(公告)号：US20170263471A1

公开(公告)日：2017-09-14

申请号：US15605533

申请日：2017-05-25

Applicant: EBARA CORPORATION

Inventor： Masayoshi IMAI

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67034 ,  H01L21/67028 ,  H01L21/67173 ,  H01L21/6776

Abstract: A substrate cleaning apparatus cleans a surface of a substrate such as a semiconductor wafer and dries the substrate. The substrate cleaning apparatus includes a process chamber having a substrate conveying unit configured to hold a substrate horizontally with its upper surface facing upwardly and to convey the substrate in one direction, and a cleaning unit configured to clean the surface of the substrate in non-contact state by supplying a cleaning liquid to the surface of the substrate which is moving in the process chamber. The substrate apparatus has an inert gas blowing unit configured to blow an inert gas toward the front and reverse surfaces of the substrate which has been cleaned in the cleaning unit to produce an inert gas atmosphere in the process chamber while drying the substrate with the inert gas.

公开(公告)号：US20170117165A1

公开(公告)日：2017-04-27

申请号：US15128309

申请日：2015-03-17

Applicant: EBARA CORPORATION

Inventor： Junji KUNISAWA ,  Toru MARUYAMA ,  Masayoshi IMAI ,  Koji MAEDA ,  Mitsuru MIYAZAKI ,  Teruaki HOMBO ,  Fujihiko TOYOMASU

IPC: H01L21/67 ,  B08B9/027 ,  B08B3/08 ,  H01L21/02

CPC classification number: H01L21/67051 ,  B08B3/08 ,  B08B9/027 ,  H01L21/02052 ,  H01L21/67046 ,  H01L21/68728

Abstract: The present invention relates to a substrate processing apparatus for processing a substrate, such as a wafer, while supplying a cleaning liquid (e.g. pure water and a liquid chemical) to the substrate, and also relates to a pipe cleaning method for the substrate processing apparatus. The substrate processing apparatus includes: a first cleaning lane including first cleaning units (52), (54) each for cleaning a substrate while supplying pure water to the substrate; a second cleaning lane including second cleaning units (60), (62) each for cleaning a substrate while supplying pure water to the substrate; a first pure-water supply pipe (120) for supplying the pure water to the first cleaning lane; and a second pure-water supply pipe (180) for supplying the pure water to the second cleaning lane.