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    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    12.
    发明申请
    LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20210336090A1

    公开(公告)日：2021-10-28

    申请号：US17237825

    申请日：2021-04-22

    Applicant: EPISTAR CORPORATION

    Inventor： Jhih-Yong YANG ,  Hsin-Ying WANG ,  De-Shan KUO ,  Chao-Hsing CHEN ,  Yi-Hung LIN ,  Meng-Hsiang HONG ,  Kuo-Ching HUNG ,  Cheng-Lin LU

    IPC: H01L33/46 ,  H01L27/15 ,  H01L33/10 ,  H01L33/62 ,  H01L33/38

    Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.

    LIGHT-EMITTING DEVICE
    13.
    发明申请
    LIGHT-EMITTING DEVICE 有权

    公开(公告)号：US20210273137A1

    公开(公告)日：2021-09-02

    申请号：US17321078

    申请日：2021-05-14

    Applicant: EPISTAR CORPORATION

    Inventor： Chao-Hsing CHEN ,  Cheng-Lin LU ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  I-Lun MA ,  Meng-Hsiang HONG ,  Hsin-Ying WANG ,  Kuo-Ching HUNG ,  Yi-Hung LIN

    IPC: H01L33/38 ,  H01L33/10 ,  H01L33/00 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24

    Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device;
    and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

    LIGHT-EMITTING DEVICE WITH REFLECTIVE LAYER
    14.
    发明申请
    LIGHT-EMITTING DEVICE WITH REFLECTIVE LAYER 有权

    公开(公告)号：US20210159366A1

    公开(公告)日：2021-05-27

    申请号：US17165290

    申请日：2021-02-02

    Applicant: EPISTAR CORPORATION

    Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Wen-Hung CHUANG ,  Tzu-Yao TSENG ,  Cheng-Lin LU

    IPC: H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62

    Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.

    LIGHT-EMITTING DEVICE
    15.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开

    公开(公告)号：US20200279976A1

    公开(公告)日：2020-09-03

    申请号：US16877840

    申请日：2020-05-19

    Applicant: EPISTAR CORPORATION

    Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Wen-Hung CHUANG ,  Tzu-Yao TSENG ,  Cheng-Lin LU

    IPC: H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62

    Abstract: A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.

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