公开(公告)号：US20170294553A1

公开(公告)日：2017-10-12

申请号：US15626993

申请日：2017-06-19

Applicant: EPISTAR CORPORATION

Inventor： Po-Shun CHIU ,  De-Shan KUO ,  Jhih-Jheng YANG ,  Jiun-Ru HUANG ,  Jian-Huei LI ,  Ying-Chieh CHEN ,  Zi-Jin LIN

IPC: H01L33/00 ,  H01L33/22

CPC classification number: H01L33/0095 ,  H01L33/10 ,  H01L33/22

Abstract: A manufacturing method of light-emitting device is disclosed. The method includes providing an LED wafer comprising a substrate and a semiconductor stack formed on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser to the LED wafer and irradiating the LED wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing and focusing a second laser on an interior of the substrate to form a plurality of textured areas in the substrate; and providing force on the LED wafer to separate the LED wafer into a plurality of LED chips.

公开(公告)号：US20160308095A1

公开(公告)日：2016-10-20

申请号：US14691221

申请日：2015-04-20

Applicant: EPISTAR CORPORATION

Inventor： Chun-Hsiang TU ,  De-Shan KUO ,  Po-Shun CHIU ,  Chi-Shiang HSU

IPC: H01L33/22 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/10 ,  H01L33/16 ,  H01L2933/0091

Abstract: A light-emitting device comprises a substrate comprising a top surface; a light-emitting stack formed on a portion of the top surface of the substrate; and a plurality of pores formed in an area of the substrate, wherein the area is under another portion of the top surface where the light-emitting stack is not formed thereon.

Abstract translation: 发光装置包括：基板，其包括顶表面; 形成在所述基板的上表面的一部分上的发光叠层; 以及形成在所述基板的区域中的多个孔，其中所述区域在其上未形成有所述发光叠层的顶表面的另一部分下。

公开(公告)号：US20150236205A1

公开(公告)日：2015-08-20

申请号：US14185586

申请日：2014-02-20

Applicant: Epistar Corporation

Inventor： Chien-Kai CHUNG ,  Po-Shun CHIU ,  Hsin-Ying Wang ,  De-Shan KUO ,  Tsun-Kai Ko ,  Yu-Ting Huang

IPC: H01L33/38 ,  H01L33/22

CPC classification number: H01L33/22 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382

Abstract: A light-emitting device comprises: a light-emitting stack comprising a first side, a second side opposite to the first side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, and the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode comprising a first section extended from the first electrode pad toward the second electrode pad, and a second section extended from the first electrode pad toward the first side.

Abstract translation: 发光装置包括：发光堆叠，包括第一侧，与第一侧相对的第二侧和在第一侧和第二侧之间的上表面; 形成在上表面上的第一电极焊盘; 形成在所述上表面上的第二电极焊盘，并且所述第一电极焊盘比所述第二电极焊盘更靠近所述第一侧; 以及第一延伸电极，包括从第一电极焊盘朝向第二电极焊盘延伸的第一部分，以及从第一电极焊盘朝向第一侧延伸的第二部分。

公开(公告)号：US20190334069A1

公开(公告)日：2019-10-31

申请号：US16510502

申请日：2019-07-12

Applicant: EPISTAR CORPORATION

Inventor： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC: H01L33/62 ,  H01L33/42 ,  H01L33/06 ,  H01L33/08 ,  H01L33/60 ,  H01L33/32 ,  H01L33/30 ,  H01L27/15

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US20180138380A1

公开(公告)日：2018-05-17

申请号：US15854462

申请日：2017-12-26

Applicant: EPISTAR CORPORATION

Inventor： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC: H01L33/62 ,  H01L33/60 ,  H01L33/42 ,  H01L33/32 ,  H01L27/15 ,  H01L33/08 ,  H01L33/06 ,  H01L33/30

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/60

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

公开(公告)号：US20160343909A1

公开(公告)日：2016-11-24

申请号：US15228529

申请日：2016-08-04

Applicant: EPISTAR CORPORATION

Inventor： Chien-Kai CHUNG ,  Po-Shun CHIU ,  Hsin-Ying WANG ,  De-Shan KUO ,  Tsun-Kai KO ,  Yu-Ting HUANG

IPC: H01L33/22 ,  H01L33/20 ,  H01L33/38

CPC classification number: H01L33/22 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382

Abstract: A light-emitting device includes: a light-emitting stack including a first side, a second side opposite to the first side, a third side connecting the first side and the second side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, wherein the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode including a first section extended from the first electrode pad in a direction away from the third side, and a second section connecting to the first section and perpendicular to the first side; wherein a distance between the first electrode pad and the third side is smaller than a distance between the second electrode pad and the third side.

Abstract translation: 发光装置包括：发光堆叠，包括第一侧，与第一侧相对的第二侧，连接第一侧和第二侧的第三侧以及第一侧和第二侧之间的上表面 ; 形成在上表面上的第一电极焊盘; 形成在所述上表面上的第二电极焊盘，其中所述第一电极焊盘比所述第二电极焊盘更靠近所述第一侧; 以及第一延伸电极，其包括从远离所述第三侧的方向从所述第一电极焊盘延伸的第一部分，以及连接到所述第一部分并垂直于所述第一侧的第二部分; 其中所述第一电极焊盘和所述第三侧之间的距离小于所述第二电极焊盘和所述第三侧之间的距离。

公开(公告)号：US20160276535A1

公开(公告)日：2016-09-22

申请号：US15074193

申请日：2016-03-18

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chin LIN ,  Ying-Chieh CHEN ,  Chi-Shiang HSU ,  De Shan KUO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC: H01L33/20 ,  H01L33/00 ,  H01L33/02

CPC classification number: H01L33/20 ,  H01L33/0095 ,  H01L33/025

Abstract: A light emitting device, includes: a substrate, including a top surface, a bottom surface, a first side surface connecting the top surface and the bottom surface, a first group of deteriorated region, and a second group of deteriorated region; and a semiconductor stack formed on the top surface of the substrate, wherein the first side surface includes a first group of convex region and a first group of concave region, wherein the first group of convex region includes the first group of deteriorated region, and the first group of concave region includes the second group of deteriorated region.

Abstract translation: 一种发光器件，包括：基板，包括顶表面，底表面，连接顶表面和底表面的第一侧表面，第一组恶化区域和第二组恶化区域; 以及形成在所述基板的上表面上的半导体堆叠，其中所述第一侧面包括第一组凸区域和第一组凹区域，其中所述第一组凸区域包括所述第一组劣化区域， 第一组凹区包括第二组恶化区。

公开(公告)号：US20160172557A1

公开(公告)日：2016-06-16

申请号：US15049917

申请日：2016-02-22

Applicant: EPISTAR CORPORATION

Inventor： De-Shan KUO ,  Ting-Chia KO ,  Chun-Hsiang TU ,  Po-Shun CHIU

IPC: H01L33/60 ,  H01L33/30 ,  H01L33/32 ,  H01L33/08

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/08 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42 ,  H01L33/60

Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

Abstract translation: 1.一种发光装置，包括：基板; 半导体堆叠层，包括在所述衬底上的第一类型半导体层，所述第一半导体层上的有源层和所述有源层上的第二半导体层; 以及在所述第二半导体层上的电极结构，其中所述电极结构包括在所述接合层和所述导电层之间的接合层，导电层和第一阻挡层; 其中导电层具有比接合层更高的标准氧化电位。

公开(公告)号：US20160013361A1

公开(公告)日：2016-01-14

申请号：US14796166

申请日：2015-07-10

Applicant: EPISTAR CORPORATION

Inventor： Po-Shun CHIU ,  De-Shan KUO ,  Jhih-Jheng YANG ,  Jiun-Ru HUANG ,  Jian-Huei LI ,  Ying-Chieh CHEN ,  Tzu-Chin LIN

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/22

CPC classification number: H01L33/0095 ,  H01L33/10 ,  H01L33/22

Abstract: A manufacturing method of light-emitting device is disclosed. The method includes providing an LED wafer comprising a substrate and a semiconductor stack formed on the substrate, wherein the semiconductor stack has a lower surface; providing a first laser to the LED wafer to cut through the semiconductor stack with a depth into the substrate; providing and focusing a second laser on an interior of the substrate to form a plurality of textured areas in the substrate; and providing force on the LED wafer to separate the LED wafer into a plurality of LED chips.

Abstract translation: 公开了一种发光器件的制造方法。 该方法包括提供包括衬底和形成在衬底上的半导体叠层的LED晶片，其中半导体叠层具有下表面; 向所述LED晶片提供第一激光以穿过所述半导体堆叠，并具有进入所述衬底的深度; 在所述衬底的内部提供和聚焦第二激光以在所述衬底中形成多个纹理化区域; 并且在LED晶片上施加力以将LED晶片分离成多个LED芯片。